Vacancy Engineering in 2D Transition Metal Chalcogenide Photocatalyst: Structure Modulation, Function and Synergy Application

Transition metal chalcogenides (TMCs) are widely used in photocatalytic fields such as hydrogen evolution, nitrogen fixation, and pollutant degradation due to their suitable bandgaps, tunable electronic and optical properties, and strong reducing ability. The unique 2D malleability structure provides a pre-designed platform for customizable structures. The introduction of vacancy engineering makes up for the shortcomings of photocorrosion and limited light response and provides the greatest support for TMCs in terms of kinetics and thermodynamics in photocatalysis. This work reviews the effect of vacancy engineering on photocatalytic performance based on 2D semiconductor TMCs. The characteristics of vacancy introduction strategies are summarized, and the development of photocatalysis of vacancy engineering TMCs materials in energy conversion, degradation, and biological applications is reviewed. The contribution of vacancies in the optical range and charge transfer kinetics is also discussed from the perspective of structure manipulation. Vacancy engineering not only controls and optimizes the structure of the TMCs, but also improves the optical properties, charge transfer, and surface properties. The synergies between TMCs vacancy engineering and atomic doping, other vacancies, and heterojunction composite techniques are discussed in detail, followed by a summary of current trends and potential for expansion.

Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

Defect engineering is a promising method for improving light harvesting in photocatalytic materials like Zinc sulphide (ZnS). By altering the S/Zn molar ratio during hydrothermal processes, Zn and S defects are successfully introduced into the ZnS crystal. The band structures can be modified by adding defects to the crystal structure of ZnS samples. During the treatment process, defects are formed on the surface. XRD and Raman studies are used for the confirmation of the crystallinity and phase formation of the samples. Using an X-ray peak pattern assessment based on the Debye Scherer model, the Williamson-Hall model, and the size strain plot, it was possible to study the influence of crystal defect on the structural characteristics of ZnS nanoparticles. The band gap (Eg) values were estimated using UV-Vis diffuse spectroscopy (UV-Vis DRS) and found that the Eg is reduced from 3.28 to 3.49 eV by altering the S/Zn molar ratio. Photoluminescence study (PL) shows these ZnS nanoparticles emit violet and blue radiations. In keeping with the results of XRD, TEM demonstrated the nanoscale of the prepared samples and exhibited a small agglomeration of homogenous nanoparticles. Scanning electron microscopy (SEM) was used to examine the surface morphology of the ZnS particles. Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS) were used to evaluate and validate the elemental composition. XPS results indicate the presence of defects on the prepared ZnS nanoparticles. For the investigation of vacancy-dependent catalytic activity under exposure to visible light, defective ZnS with different quantities of Zn and S voids are used as catalysts. The lowest S/Zn sample, ZnS0.67 and the highest S/Zn sample, ZnS3, show superior photocatalytic activity.

Fast and effective catalytic degradation of an organic dye by eco-friendly capped ZnS and Mn-doped ZnS nanocrystals

Undoped and manganese doped ZnS nanocrystals encapsulated with thioglycolic acid (ZnS-TGA) were synthesized and characterized with different techniques, and finally tested in the photodegradation of a methyl orange in aqueous solution under UV and sunlight irradiations. FTIR and X-ray diffraction results confirmed the functionalization of these nanocrystal surface by thioglycolic acid and the formation of crystalline structures of ZnS and Mn-doped ZnS with cubic and hexagonal phases. Calculated average size of ZnS nanocrystals was in the range of 2-3 nm. It was observed a blue shift of the absorbance threshold and the estimated bandgap energies were higher than that of Bulk ZnS thus confirming the quantum confinement effect of charge carriers. Photoluminescence spectra of ZnS nanocrystals exhibited emission in the range of 410-490 nm and the appearance of an additional emission band around 580 nm (2.13 eV) connected to the ⁴T₁ → ⁶A₁ transition of the Mn²⁺ions. Photodegradation of methylene orange with undoped and Mn-doped ZnS-TGA nanocrystals was investigated. Dye adsorption prior to photocatalysis using nanocrystals was studied via kinetic and equilibrium experiments. The maximum dye adsorption capacity on doped ZnS-TGA was ~ 26.98 mg/g. The adsorption kinetic was found to follow the pseudo-second-order kinetic model. A statistical physics model was used to analyze the equilibrium data where the calculated adsorption energy was 17-18 kJ/mol. It was concluded that the dye adsorption was associated to the hydrogen interaction where the removal process was feasible and multi-molecular at 25 °C. The photocatalytic activity of undoped ZnS nanoparticles under UV irradiation showed better efficiency than doped nanocrystals thus indicating that manganese doping generated a dropping of the photocatalytic degradation of the dye. Dye degradation efficiency of 81.37% using ZnS-TGA nanocrystals was achieved after 6 min, which indicated that ZnMnS-TGA nanocrystals may be considered an alternative low cost and environmental friendly material for facing water pollution caused by organic compounds via photodegradation processes.

Plasma-Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films

The synthesis of highly crystalline mesoporous materials is key to realizing high-performance chemical and biological sensors and optoelectronics. However, minimizing surface oxidation and enhancing the domain size without affecting the porous nanoarchitecture are daunting challenges. Herein, we report a hybrid technique that combines bottom-up electrochemical growth with top-down plasma treatment to produce mesoporous semiconductors with large crystalline domain sizes and excellent surface passivation. By passivating unsaturated bonds without incorporating any chemical or physical layers, these films show better stability and enhancement in the optoelectronic properties of mesoporous copper telluride (CuTe) with different pore diameters. These results provide exciting opportunities for the development of long-term, stable, and high-performance mesoporous semiconductor materials for future technologies.