Synthesis, crystal structure and charge transport characteristics of stable peri-tetracene analogues

Pushing Up the Size Limit of Boron-doped peri-Acenes: Modular Synthesis and Characterizations

Heteroatom-doped peri-acenes (PAs) have recently attracted considerable attention considering their fascinating physical properties and chemical stability. However, the precise sole addition of boron atoms along the zigzag edges of PAs remains challenging, primarily due to the limited synthetic approach. Herein, we present a novel one-pot modular synthetic strategy toward unprecedented boron-doped PAs (B-PAs), including B-[4,2]PA (1 a-2), B-[4,3]PA (1 b-2) and B-[7,2]PA (1 c-3) derivatives, through efficient intramolecular electrophilic borylation. Their chemical structures are unequivocally confirmed with a combination of mass spectrometry, NMR, and single-crystal X-ray diffraction analysis. Notably, 1 b-2 exhibits an almost planar geometry, whereas 1 a-2 displays a distinctive bowl-like distortion. Furthermore, the optoelectronic properties of this series of B-PAs are thoroughly investigated by UV/Vis absorption and fluorescence spectroscopy combined with DFT calculation. Compared with their parent all-carbon analogs, the obtained B-PAs exhibit high stability, wide energy gaps, and high photoluminescence quantum yields of up to 84 %. This study reveals the exceptional ability of boron doping to finely tune the physicochemical properties of PAs, showcasing their potential applications in optoelectronics.

Isomeric dibenzooctazethrene diradicals for high-performance air-stable organic field-effect transistors

Realizing both high-performance and air-stability is key to advancing singlet-diradical-based semiconductors to practical applications and realizing their material potential associated with their open-shell nature. Here a concise synthetic route toward two stable dibenzooctazethrene isomers, DBOZ1 and DBOZ2, was demonstrated. In the crystalline phase, DBOZ2 exhibits two-dimensional brick wall packing with a high degree of intermolecular electronic coupling, leading to a record-breaking hole mobility of 3.5 cm2 V-1 s-1 for singlet diradical transistors, while retaining good device stability in the ambient air.

Essential Role of Triplet Diradical Character for Large Magnetoresistance in Quinoidal Organic Semiconductor with High Electron Mobility

A diradicaloid molecule with high semiconducting performance is synthesized based on the quinoidal benzo[1,2-b:4,5-b']dithiophene structure. The diradical character is investigated by quantum chemical calculations and variable temperature electron spin resonance. The diode devices based on this molecule show a large change in electric current in magnetic fields below 100 mT with a strong dependence on the measurement temperatures; as the population of the triplet diradicals increases at high temperatures, the magnetoconductance (MC) values increase. As a result, a MC of -19.4% is achieved at 120 °C, which is the largest negative MC observed for organic molecules to date. In contrast, a smaller diradicaloid molecule based on quinoidal thieno[3,2-b]thiophene without thermally accessible triplet state shows no MC, indicating the essential role of the triplet diradicals. The strong correlation between the MC and the triplet diradical concentrations suggests that the charge conduction in the diradicaloid is suppressed through a spin-blocking mechanism, which can be controlled through the magnetic modulation of the hyperfine fields. The compound forms high-crystallinity thin films and has high monopolar electron transport in organic field-effect transistors, with an average mobility of 1.01 cm² V^-1 s^-1 for edge-cast films.

Synthesis of zigzag- and fjord-edged nanographene with dual amplified spontaneous emission

Dibenzo[a,m]dinaphtho[ef,hi]coronene with zigzag and fjord edges was synthesized and characterized, demonstrating a nonplanar structure with near-infrared stimulated emission with a relatively long lifetime and dual-amplified spontaneous emission.

peri-Acenoacene molecules: tuning of the singlet and triplet excitation energies by modifying their radical character

The energy difference between singlet and triplet excitons, or ΔE_ST, is a key parameter for novel light-emission mechanisms (i.e., TADF or thermally activated delayed fluorescence) or other photoactivated processes. We have studied a set of conjugated molecules (peri-acenoacenes and their heteroatom-doped analogues) to observe the evolution of their excited-state properties upon increasing the system size with and without substitution with a pair of N atoms. Since these molecules exhibit a (ground-state) diradicaloid character, together with marked correlation effects influencing the excited-states formed, we have applied a variety of theoretical methods (FT-DFT, TD-DFT, SF-TD-DFT, CIS, CIS(D), SCS-CC2, SA-CASSCF, and SC-NEVPT2) to bracket the accuracy of the results while concomitantly providing insights into electronic structure. The results show how this chemical strategy (N-doping) largely modifies not only the excited-state energies but also the oscillator strengths and the ΔE_ST values, constituting versatile platforms for fine-tuned photophysical applications.

Isomeric Dibenzoheptazethrenes for Air-Stable Organic Field-Effect Transistors

Singlet diradicaloids hold great potential as semiconductors for organic field-effect transistors (OFETs). However, their relative low material and device stabilities impede the practical applications. Here, to achieve balanced stability and performance, two isomeric dibenzoheptazethrene derivatives with singlet diradical character were synthesized in a concise manner. Benefitting from the aromatic stabilization, both compounds display a small diradical character and large singlet-triplet gap, as corroborated by variable-temperature electron paramagnetic resonance spectra, single-crystal analysis, and theoretical calculations. OFET devices based on single crystals showed a high hole mobility of 0.15 cm²  V^-1  s^-1 , which is the highest for zethrene-based semiconductors. Both isomers exhibited remarkable material stability in air-saturated solutions as well as excellent bias-stress and storage stability in device under ambient air.