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Sharma R, Nameirakpam H, Belinchón DM, Sharma P, Noumbe U, Belotcerkovtceva D, Berggren E, Vretenár V, Vanco L, Matko M, Biroju RK, Satapathi S, Edvinsson T, Lindblad A, Kamalakar MV. Large-Scale Direct Growth of Monolayer MoS 2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38711-38722. [PMID: 38995218 DOI: 10.1021/acsami.4c07028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.
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Affiliation(s)
- Rahul Sharma
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Henry Nameirakpam
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | | | - Prince Sharma
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Ulrich Noumbe
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Daria Belotcerkovtceva
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Elin Berggren
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Viliam Vretenár
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Lubomir Vanco
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Matus Matko
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Ravi K Biroju
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
- School of Advanced Sciences-Division of Physics, Vellore Institute of Technology, Vandalur-Kelambakkam Road Chennai, Chennai, Tamil Nadu 600127, India
| | - Soumitra Satapathi
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Tomas Edvinsson
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala SE-751 03, Sweden
| | - Andreas Lindblad
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
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2
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Jiménez-Arévalo N, Al Shuhaib JH, Pacheco RB, Marchiani D, Saad Abdelnabi MM, Frisenda R, Sbroscia M, Betti MG, Mariani C, Manzanares-Negro Y, Navarro CG, Martínez-Galera AJ, Ares JR, Ferrer IJ, Leardini F. MoS 2 Photoelectrodes for Hydrogen Production: Tuning the S-Vacancy Content in Highly Homogeneous Ultrathin Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2023; 15:33514-33524. [PMID: 37406352 PMCID: PMC10865293 DOI: 10.1021/acsami.3c02192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 06/14/2023] [Indexed: 07/07/2023]
Abstract
Tuning the electrocatalytic properties of MoS2 layers can be achieved through different paths, such as reducing their thickness, creating edges in the MoS2 flakes, and introducing S-vacancies. We combine these three approaches by growing MoS2 electrodes by using a special salt-assisted chemical vapor deposition (CVD) method. This procedure allows the growth of ultrathin MoS2 nanocrystals (1-3 layers thick and a few nanometers wide), as evidenced by atomic force microscopy and scanning tunneling microscopy. This morphology of the MoS2 layers at the nanoscale induces some specific features in the Raman and photoluminescence spectra compared to exfoliated or microcrystalline MoS2 layers. Moreover, the S-vacancy content in the layers can be tuned during CVD growth by using Ar/H2 mixtures as a carrier gas. Detailed optical microtransmittance and microreflectance spectroscopies, micro-Raman, and X-ray photoelectron spectroscopy measurements with sub-millimeter spatial resolution show that the obtained samples present an excellent homogeneity over areas in the cm2 range. The electrochemical and photoelectrochemical properties of these MoS2 layers were investigated using electrodes with relatively large areas (0.8 cm2). The prepared MoS2 cathodes show outstanding Faradaic efficiencies as well as long-term stability in acidic solutions. In addition, we demonstrate that there is an optimal number of S-vacancies to improve the electrochemical and photoelectrochemical performances of MoS2.
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Affiliation(s)
- Nuria Jiménez-Arévalo
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
| | - Jinan H. Al Shuhaib
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
| | | | - Dario Marchiani
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | - Mahmoud M. Saad Abdelnabi
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
- Physics
Department, Faculty of Science, Ain Shams
University, 11566 Cairo, Egypt
| | - Riccardo Frisenda
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | - Marco Sbroscia
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | | | - Carlo Mariani
- Dipartimento
di Física, Sapienza Università
di Roma, 00185 Roma, Italy
| | - Yolanda Manzanares-Negro
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Cristina Gómez Navarro
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| | - Antonio J. Martínez-Galera
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| | - José Ramón Ares
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
| | - Isabel J. Ferrer
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
| | - Fabrice Leardini
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, 28049, Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, 28049 Madrid, Spain
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3
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Suleman M, Lee S, Kim M, Nguyen VH, Riaz M, Nasir N, Kumar S, Park HM, Jung J, Seo Y. NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS 2 Crystals Using Confined-Space CVD. ACS OMEGA 2022; 7:30074-30086. [PMID: 36061644 PMCID: PMC9434612 DOI: 10.1021/acsomega.2c03108] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2022] [Accepted: 08/10/2022] [Indexed: 06/15/2023]
Abstract
Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS2) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS2 remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS2 in a controlled manner. Herein, we report the large-scale growth of MoS2 with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS2 are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS2 are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS2 show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS2 and opens the way for its various optoelectronic and electronic applications.
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Affiliation(s)
- Muhammad Suleman
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Sohee Lee
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Minwook Kim
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Van Huy Nguyen
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Muhammad Riaz
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Naila Nasir
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Sunil Kumar
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Hyun Min Park
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Jongwan Jung
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Yongho Seo
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
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Gao Q, Chen L, Chen S, Zhang Z, Yang J, Pan X, Yi Z, Liu L, Chi F, Liu P, Zhang C. NaCl-Assisted Chemical Vapor Deposition of Large-Domain Bilayer MoS 2 on Soda-Lime Glass. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2913. [PMID: 36079950 PMCID: PMC9457956 DOI: 10.3390/nano12172913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2022] [Revised: 08/19/2022] [Accepted: 08/20/2022] [Indexed: 06/15/2023]
Abstract
In recent years, two-dimensional molybdenum disulfide (MoS2) has attracted extensive attention in the application field of next-generation electronics. Compared with single-layer MoS2, bilayer MoS2 has higher carrier mobility and has more promising applications for future novel electronic devices. Nevertheless, the large-scale low-cost synthesis of high-quality bilayer MoS2 still has much room for exploration, requiring further research. In this study, bilayer MoS2 crystals grown on soda-lime glass substrate by sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) were reported, the growth mechanism of NaCl in CVD of bilayer MoS2 was analyzed, and the effects of molybdenum trioxide (Mo) mass and growth pressure on the growth of bilayer MoS2 under the assistance of NaCl were further explored. Through characterization with an optical microscope, atomic force microscopy and Raman analyzer, the domain size of bilayer MoS2 prepared by NaCl-assisted CVD was shown to reach 214 μm, which is a 4.2X improvement of the domain size of bilayer MoS2 prepared without NaCl-assisted CVD. Moreover, the bilayer structure accounted for about 85%, which is a 2.1X improvement of bilayer MoS2 prepared without NaCl-assisted CVD. This study provides a meaningful method for the growth of high-quality bilayer MoS2, and promotes the large-scale and low-cost applications of CVD MoS2.
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Affiliation(s)
- Qingguo Gao
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Lvcheng Chen
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Simin Chen
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Zhi Zhang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Jianjun Yang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Xinjian Pan
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Zichuan Yi
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Liming Liu
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Feng Chi
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Ping Liu
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
| | - Chongfu Zhang
- School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China
- School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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5
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Wu F, Xu X, Xie Z, Kong Y, Cao D, Yang J. Shape controllable MoS 2 nanocrystals prepared by the single precursor route for electrocatalytic hydrogen evolution. RSC Adv 2022; 12:23618-23625. [PMID: 36090421 PMCID: PMC9389383 DOI: 10.1039/d2ra02834d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 08/09/2022] [Indexed: 11/21/2022] Open
Abstract
MoS2 has attracted great attention as a prospective electrocatalyst for generating hydrogen via water electrolysis due to its abundant and inexpensive sources. However, bulk MoS2 has weak electrocatalytic activity because of its low electrical conductivity and few edge-active sites. Controllable synthesis of MoS2 with ultrasmall size or complex morphology may be an available strategy to boost its conductivity and edge-active sites. Herein, a facile single-precursor strategy was developed to prepare nanoscale MoS2 with various morphologies, including quantum dots, nanorods, nanoribbons, and nanosheets. In-depth studies show that the formation of MoS2 with various shapes is determined by both kinetic and thermodynamic factors such as reaction time and temperature. Electrocatalytic tests reveal that MoS2 quantum dots have high electrocatalytic performance with a low overpotential of 255 mV and a small Tafel slope of 66 mV dec−1 due to the abundant exposed active edges and excellent intrinsic conductivity. A facile single-precursor route was designed for the synthesis of shape- and size-controllable MoS2 nanocrystals, including MoS2 QDs, nanorods, nanoribbons, and nanosheets. Among them, MoS2 QDs exhibit higher electrocatalytic activity in HRE.![]()
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Affiliation(s)
- Fengyi Wu
- School of Chemistry and Material Engineering, Institute of Novel Functional Materials, Chaohu University, Hefei 238000, P. R. China
| | - Xiaoyong Xu
- School of Chemistry and Material Engineering, Institute of Novel Functional Materials, Chaohu University, Hefei 238000, P. R. China
| | - Zhong Xie
- School of Chemistry and Material Engineering, Institute of Novel Functional Materials, Chaohu University, Hefei 238000, P. R. China
| | - Yaqiong Kong
- School of Chemistry and Material Engineering, Institute of Novel Functional Materials, Chaohu University, Hefei 238000, P. R. China
| | - Duojun Cao
- School of Chemistry and Material Engineering, Institute of Novel Functional Materials, Chaohu University, Hefei 238000, P. R. China
| | - Jiliang Yang
- School of Chemistry and Material Engineering, Institute of Novel Functional Materials, Chaohu University, Hefei 238000, P. R. China
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Tan X, Zhao D, Sun Y, Duan Z, Wang X, Wu X. Co doped MoS2 nanosheet: a stable and pH-universal electrocatalyst for efficient hydrogen evolution reaction. CrystEngComm 2022. [DOI: 10.1039/d2ce00951j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Generally, the hydrogen generation of non-noble metal based electrocatalysts is limited by the high overpotential and acid-base environment of electrolyte. Therefore, it is essential to develop hydrogen evolution reaction (HER)...
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Luo X, Peng Z, Wang Z, Dong M. Layer-by-Layer Growth of AA-Stacking MoS 2 for Tunable Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:59154-59163. [PMID: 34856097 DOI: 10.1021/acsami.1c19906] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS2 domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS2 domains would transit from an AA-stacking bilayer to an AAAAA-stacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS2 phototransistors, we found a significant dependence on the stacking configuration of MoS2 of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS2 phototransistor delivers a photoresponse of 978.14 A W-1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.
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Affiliation(s)
- Xiai Luo
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zhenghan Peng
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, Aarhus 8000, Denmark
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