Phonon thermal conductivity of the stanene/hBN van der Waals heterostructure

Phonon transport in vacancy induced defective stanene/hBN van der Waals heterostructure

In this study, Non-Equilibrium Molecular Dynamics (NEMD) simulation is employed to investigate the phonon thermal conductivity (PTC) of Sn/hBN van der Waals heterostructures with different vacancy-induced defects. We deliberately introduce three types of vacancies in Sn/hBN bilayer point vacancies, bivacancies, and edge vacancies at various concentrations ranging from 0.25% to 2%, to examine their effects on PTC across temperatures from 100 K to 600 K. The key findings of our work are (i) PTC declines monotonically with increasing vacancy concentration for all types of vacancies, with a maximum reduction of ∼62% observed at room temperature compared to its pristine form. (ii) The position of defects has an impact on PTC, with a larger decrease observed when defects are present in the hBN layer and a smaller decrease when defects are in the Sn layer. (iii) The type of vacancy also influences PTC, with point vacancies causing the most substantial reduction, followed by bivacancies, and edge vacancies having the least effect. A 2% defect concentration results in a ∼62% decrease in PTC for point vacancies, ∼51% for bivacancies, and ∼32% for edge vacancies. (iv) Finally, our results indicate that for a given defect concentration, PTC decreases as temperature increases. The impact of temperature on thermal conductivity is less pronounced compared to the effect of vacancies for the defective Sn/hBN bilayer. The presence of vacancies and elevated temperatures enhance phonon-defect and phonon-phonon scattering, leading to changes in the phonon density of states (PDOS) profile and the distribution of phonons across different frequencies of Sn/hBN bilayer, thus affecting its thermal conductivity. This work offers new insights into the thermal behavior of vacancy-filled Sn/hBN heterostructures, suggesting potential pathways for modulating thermal conductivity in bilayer van der Waals heterostructures for applications in thermoelectric, optoelectronics, and nanoelectronics in future.

Thermal transport in multilayer silicon carbide nanoribbons: reverse non-equilibrium molecular dynamics

The heat conduction performance of materials has a crucial role in deciding their functional efficiency. For this purpose, the present study explores the structural and thermal properties of multilayer silicon carbide nanoribbons (SiCNRs). At first, we realize that the smallest values of cohesive energy correspond to the system with the largest interlayer distance due to vdW forces. The effects of stacking layers, their number, edge chirality, ribbon width, temperature (T) as well as coupling strength between the layers on the thermal conductivity, are all examined and discussed, using reverse nonequilibrium molecular dynamics. This results in an anisotropic trend of κ in terms of some parameters due to phonon scattering. By analyzing the various phonon properties, including phonon density of states, phonon dispersion relations as well as phonon mean free path, we gain critical insights into the mechanism of heat conduction in the systems. System size results reveal that thermal conductivities follow an increasing behavior with length and a decreasing trend with width as well as temperature, which is attributed to the phonon-phonon scattering rate. Furthermore, the thermal conductivities drift from the normal 1/T law and show an anomalous decreasing behavior above room temperature. Overall, these results offer a deep understating towards the thermal conductivity of n-SiCNRs and could promote their potential applications in thermoelectric and nanoelectronic devices.

Phonon Thermal Transport in Silicene/Graphene Heterobilayer Nanostructures: Effect of Interlayer Interactions

Heterostructuring, as a promising route to optimize the physical properties of 2D materials, has attracted great attention from the academic community. In this paper, we investigated the room-temperature in-plane and cross-plane phonon thermal transport in silicene/graphene van der Waals (vdW) heterostructures using molecular dynamics simulations. Our simulation results demonstrated that heat current along the graphene layer is remarkably larger than that along the silicene layer, which suggests that graphene dominates the thermal transport in silicene/graphene heterostructures. The in-plane phonon thermal conductivity of the silicene/graphene heterostructures could be a compromise between monolayer graphene and monolayer silicene. Heterostructuring can remarkably reduce the in-plane thermal conductivity of the graphene layer but increase the in-plane thermal conductivity of the silicene layer in heterobilayers compared with the freestanding monolayer counterparts because of their different structures. We also simulated the interlayer interaction strength effect on the in-plane phonon thermal conductivity and cross-plane interfacial thermal resistance of silicene/graphene heterostructures. Total in-plane phonon thermal conductivity and interfacial thermal resistance both decrease with the increase in the interlayer interaction strength in the silicene/graphene heterobilayers. In addition, the calculated interfacial thermal resistance shows the effect of the thermal transport direction across the interface. This study provides a useful reference for the thermal management regulation of 2D vdW heterostructures.

Atomic-level investigation on the oxidation efficiency and corrosion resistance of lithium enhanced by the addition of two dimensional materials

Understanding the oxidation and corrosion characteristics of Lithium (Li)-based systems is critical to their successful use as a solid fuel in spacecraft, powerplants, rechargeable batteries, submarines, and many other aquatic and corrosive environments. This study offers a systematic roadmap for engineering the oxidation efficiency and corrosion resistance of Li-based systems using ReaxFF-based Reactive Molecular Dynamics (RMD) simulations for the first time. First, we explored the oxidation mechanism of bare Li (Li/O2) at 1200 K, noticing that the oxidation process quickly ceases due to the creation of a passive oxide film on the Li surface. Afterward, we examined the effect of introducing graphene-oxide (GO) to the oxidation process of Li/O2. Interestingly, the inclusion of GO establishes a new reaction pathway between Li and O2, thus significantly improving oxidation efficiency. Additionally, we realized that when the concentration of GO increases in the system, the oxidation rate of Li/O2 increases considerably. As exposed to O2 and H2O, bare Li is observed to be highly corrosion-prone, while graphene (Gr)-coated Li exhibits excellent corrosion resistance, suggesting that Gr might be used as a promising corrosion-protective shield. Overall, this study is intended to serve as a reference for experimental investigations and assist researchers and engineers in designing more efficient Li-based functional systems.

Methods for Measuring Thermal Conductivity of Two-Dimensional Materials: A Review

Two-dimensional (2D) materials are widely used in microelectronic devices due to their excellent optical, electrical, and mechanical properties. The performance and reliability of microelectronic devices based 2D materials are affected by heat dissipation performance, which can be evaluated by studying the thermal conductivity of 2D materials. Currently, many theoretical and experimental methods have been developed to characterize the thermal conductivity of 2D materials. In this paper, firstly, typical theoretical methods, such as molecular dynamics, phonon Boltzmann transport equation, and atomic Green's function method, are introduced and compared. Then, experimental methods, such as suspended micro-bridge, 3ω, time-domain thermal reflectance and Raman methods, are systematically and critically reviewed. In addition, the physical factors affecting the thermal conductivity of 2D materials are discussed. At last, future prospects for both theoretical and experimental thermal conductivity characterization of 2D materials is given. This paper provides an in-depth understanding of the existing thermal conductivity measurement methods of 2D materials, which has guiding significance for the application of 2D materials in micro/nanodevices.

Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

Graphene based two-dimensional (2D) van der Waals (vdW) materials have attracted enormous attention because of their extraordinary physical properties. In this study, we explore the temperature and interlayer coupling induced thermal transport across the graphene/2D-SiC vdW interface using non-equilibrium molecular dynamics and transient pump probe methods. We find that the in-plane thermal conductivity κ deviates slightly from the 1/T law at high temperatures. A tunable κ is found with the variation of the interlayer coupling strength χ. The interlayer thermal resistance R across graphene/2D-SiC interface reaches 2.71 [Formula: see text] 10-7 [Formula: see text] at room temperature and χ = 1, and it reduces steadily with the elevation of system temperature and χ, demonstrating around 41% and 56% reduction with increasing temperature to 700 K and a χ of 25, respectively. We also elucidate the heat transport mechanism by estimating the in-plane and out-of-plane phonon modes. Higher phonon propagation possibility and Umklapp scattering across the interface at high temperatures and increased χ lead to the significant reduction of R. This work unveils the mechanism of heat transfer and interface thermal conductance engineering across the graphene/2D-SiC vdW heterostructure.

Thermal transport in monolayer zinc-sulfide: effects of length, temperature and vacancy defects

Of late, atomically thin two-dimensional zinc-sulfide (2D-ZnS) shows great potential for advanced nanodevices and as a substitute to graphene and transition metal di-chalcogenides owing to its exceptional optical and electronic properties. However, the functional performance of nanodevices significantly depends on the effective heat management of the system. In this paper, we explored the thermal transport properties of 2D-ZnS through molecular dynamics simulations. The impact of length, temperature, and vacancy defects on the thermal properties of 2D-ZnS are systematically investigated. We found that the thermal conductivity (TC) rises monotonically with increasing sheet length, and the bulk TC of ∼30.67 W mK^-1is explored for an infinite length ZnS. Beyond room temperature (300 K), the TC differs from the usual 1/Trule and displays an abnormal, slowly declining behavior. The point vacancy (PV) shows the largest decrease in TC compared to the bi vacancy (BV) defects. We calculated phonon modes for various lengths, temperatures, and vacancies to elucidate the TC variation. Conversely, quantum corrections are used to avoid phonon modes' icing effects on the TC at low temperatures. The obtained phonon density of states (PDOS) shows a softening and shrinking nature with increasing temperature, which is responsible for the anomaly in the TC at high temperatures. Owing to the increase of vacancy concentration, the PDOS peaks exhibit a decrease for both types of defects. Moreover, the variation of the specific heat capacity and entropy with BV and PV signify our findings of 2D-ZnS TC at diverse concentrations along with the different forms of vacancies. The results elucidated in this study will be a guide for efficient heat management of ZnS-based optoelectronic and nano-electronic devices.