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Giancaspro M, Panniello A, Depalo N, Comparelli R, Striccoli M, Curri ML, Fanizza E. Understanding the Effect of the Synthetic Method and Surface Chemistry on the Properties of CsPbBr 3 Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:81. [PMID: 38202535 PMCID: PMC10780980 DOI: 10.3390/nano14010081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 12/22/2023] [Accepted: 12/25/2023] [Indexed: 01/12/2024]
Abstract
Over the last decade, the attractive properties of CsPbBr3 nanoparticles (NPs) have driven ever-increasing progress in the development of synthetic procedures to obtain high-quality NPs at high concentrations. Understanding how the properties of NPs are influenced by the composition of the reaction mixture in combination with the specific synthetic methodology is crucial, both for further elucidating the fundamental characteristics of this class of materials and for their manufacturing towards technological applications. This work aims to shed light on this aspect by synthesizing CsPbBr3 NPs by means of two well-assessed synthetic procedures, namely, hot injection (HI) and ligand-assisted reprecipitation (LARP) in non-polar solvents, using PbBr2 and Cs2CO3 as precursors in the presence of already widely investigated ligands. The overall goal is to study and compare the properties of the NPs to understand how each synthetic method influences the NPs' size and/or the optical properties. Reaction composition and conditions are purposely tuned towards the production of nanocubes with narrow size distribution, high emission properties, and the highest achievable concentration. As a result, the formation of bulk crystals as precipitate in LARP limits the achievement of a highly concentrated NP solution. The size of the NPs obtained by LARP seems to be poorly affected by the ligands' nature and the excess bromide, as consequence of bromide-rich solvation agents, effectively results in NPs with excellent emission properties. In contrast, NPs synthesized by HI exhibit high reaction yield, diffusion growth-controlled size, and less striking emission properties, probably ascribed to a bromide-deficient condition.
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Affiliation(s)
- Mariangela Giancaspro
- Dipartimento di Chimica, University of Bari, Via Orabona 4, 70126 Bari, Italy;
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
| | - Annamaria Panniello
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
| | - Nicoletta Depalo
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
| | - Roberto Comparelli
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
- Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali (INSTM), Bari Research Unit, 50121 Firenze, Italy
| | - Marinella Striccoli
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
- Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali (INSTM), Bari Research Unit, 50121 Firenze, Italy
| | - Maria Lucia Curri
- Dipartimento di Chimica, University of Bari, Via Orabona 4, 70126 Bari, Italy;
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
- Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali (INSTM), Bari Research Unit, 50121 Firenze, Italy
| | - Elisabetta Fanizza
- Dipartimento di Chimica, University of Bari, Via Orabona 4, 70126 Bari, Italy;
- National Research Council (CNR)-Institute for Physical Chemistry Processes (IPCF), SO Bari, Via Orabona 4, 70126 Bari, Italy; (A.P.); (N.D.); (M.S.)
- Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali (INSTM), Bari Research Unit, 50121 Firenze, Italy
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2
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Jocić M, Vukmirović N. Ab-initio calculations of temperature dependent electronic structures of inorganic halide perovskite materials. Phys Chem Chem Phys 2023; 25:29017-29031. [PMID: 37860895 DOI: 10.1039/d3cp02054a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Despite wide interest in halide perovskite materials, it is still challenging to accurately calculate their electronic structure and its temperature dependence. In this work, we present ab-initio calculations of the temperature dependence of the electronic structure of CsPbX3 materials (X = Cl, Br or I) in the cubic form and of the zero temperature electronic structure of the orthorhombic phase of these materials. Phonon-induced temperature dependent band energy renormalization was calculated within the framework of Allen-Heine-Cardona theory, where we exploited the self-consistent procedure to determine both the energy level shifts and their broadenings. The phonon spectrum of the materials was obtained using the self-consistent phonon method since standard density functional perturbation theory calculations in harmonic approximation yield phonon modes with imaginary frequencies due to the fact that the cubic structure is not stable at zero temperature. Our results suggest that low energy phonon modes mostly contribute to phonon-induced band energy renormalization. The calculated values of the band gaps at lowest temperature where the material exhibits a cubic structure are in good agreement with experimental results from the literature. The same is the case for the slope of the temperature dependence of the band gap for the CsPbI3 material where reliable experimental data are available in the literature. We also found that phonon-induced temperature dependence of the band gap is most pronounced for the conduction band minimum and valence band maximum, while other bands exhibit a weaker dependence.
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Affiliation(s)
- Milan Jocić
- Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.
| | - Nenad Vukmirović
- Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.
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Fu H, Wang K, Wu H, Bowen CR, Fang Z, Yan Z, Jiang S, Ou D, Yang Y, Zheng J, Yang W. Enhanced Hygrothermal Stability of In-Situ-Grown MAPbBr 3 Nanocrystals in Polymer with Suppressed Desorption of Ligands. Inorg Chem 2023; 62:13467-13475. [PMID: 37545093 DOI: 10.1021/acs.inorgchem.3c01834] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/08/2023]
Abstract
Currently, the intrinsic instability of organic-inorganic hybrid perovskite nanocrystals (PNCs) at high temperature and high humidity still stands as a big barrier to hinder their potential applications in optoelectronic devices. Herein, we report the controllable in-situ-grown PNCs in polyvinylidene fluoride (PVDF) polymer with profoundly enhanced hygrothermal stability. It is found that the introduced tetradecylphosphonic acid (TDPA) ligand enables significantly improved binding to the surface of PNCs via a strong covalently coordinated P-O-Pb bond, as evidenced by density functional theory calculations and X-ray photoelectron spectroscopy analyses. Accordingly, such enhanced binding could not only make efficient passivation of the surface defects of PNCs but also enable the remarkably suppressed desorption of the ligand from the PNCs under high-temperature environments. Consequently, the photoluminescence quantum yield (PL QY) of the as-fabricated MAPbBr3-PNCs@PVDF film exhibits almost no decay after exposure to air at 333 K over 1800 h. Once the temperatures are increased from 293 to 353 K, their PL intensity can be kept as 88.6% of the initial value, much higher than that without the TDPA ligand (i.e., 42.4%). Moreover, their PL QY can be maintained above 50% over 1560 h (65 days) under harsh working conditions of 333 K and 90% humidity. As a proof of concept, the as-assembled white light-emitting diodes display a large color gamut of 125% National Television System Committee standard, suggesting their promising applications in backlight devices.
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Affiliation(s)
- Hui Fu
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
- Institute of Zhejiang, Tianjin University, Ningbo, Zhejiang 315201, P. R. China
| | - Kai Wang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Hao Wu
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Chris R Bowen
- Department of Mechanical Engineering, University of Bath, Bath BA2 7AK, U.K
| | - Zhi Fang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Zebin Yan
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Shuheng Jiang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Deliu Ou
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Yang Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
| | - Jinju Zheng
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
- Institute of Zhejiang, Tianjin University, Ningbo, Zhejiang 315201, P. R. China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, Zhejiang 315211, P. R. China
- Institute of Zhejiang, Tianjin University, Ningbo, Zhejiang 315201, P. R. China
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Guo X, Han Q, Wang J, Tian S, Bai R, Zhao H, Zou X, Lu X, Sun Q, Zhang DW, Hu S, Ji L. Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:24606-24613. [PMID: 37184060 DOI: 10.1021/acsami.3c03191] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
We report the large-scale transfer process for monocrystalline CsPbBr3 thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr3 thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr3 and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm2, a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm2 V-1 s-1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr3 and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.
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Affiliation(s)
- Xiangyu Guo
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qi Han
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jun Wang
- Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Shuangshuang Tian
- Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Rongxu Bai
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haibin Zhao
- Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiashan 314100, China
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
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5
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Konoshchuk NV, Rozovik OP, Koshechko VG, Pokhodenko VD. Effect of CsPbBr3 Content in Mechanochemically Obtained CsPbBr3/h-BN Nanocomposites on Their Photoluminescent Characteristics. THEOR EXP CHEM+ 2023. [DOI: 10.1007/s11237-023-09755-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/07/2023]
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Vukovic O, Folpini G, Wong EL, Leoncino L, Terraneo G, Albaqami MD, Petrozza A, Cortecchia D. Structural effects on the luminescence properties of CsPbI 3 nanocrystals. NANOSCALE 2023; 15:5712-5719. [PMID: 36880499 PMCID: PMC10035506 DOI: 10.1039/d2nr06345j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2022] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Metal halide perovskite nanocrystals (NCs) are promising for photovoltaic and light-emitting applications. Due to the softness of their crystal lattice, structural modifications have a critical impact on their optoelectronic properties. Here we investigate the size-dependent optoelectronic properties of CsPbI3 NCs ranging from 7 to 17 nm, employing temperature and pressure as thermodynamic variables to modulate the energetics of the system and selectively tune the interatomic distances. By temperature-dependent photoluminescence spectroscopy, we have found that luminescence quenching channels exhibit increased non-radiative losses and weaker exciton-phonon coupling in bigger particles, in turn affecting the luminescence efficiency. Through pressure-dependent measurements up to 2.5 GPa, supported by XRD characterization, we revealed a NC-size dependent solid-solid phase transition from the γ-phase to the δ-phase. Importantly, the optical response to these structural changes strongly depends on the size of the NC. Our findings provide an interesting guideline to correlate the size and structural and optoelectronic properties of CsPbI3 NCs, important for engineering the functionalities of this class of soft semiconductors.
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Affiliation(s)
- Olivera Vukovic
- Centre for Nano Science and Technology (CNST@PoliMi), Istituto Italiano di Tecnologia, Via Pascoli 70, Milan 20133, Italy.
- Molecular Materials and Nanosystems & Institute for Complex Molecular Systems, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
- Université de Pau & Pays Adour, CNRS, IPREM UMR 5254, 2 Avenue du Président Angot, Pau F-64053, France
| | - Giulia Folpini
- Centre for Nano Science and Technology (CNST@PoliMi), Istituto Italiano di Tecnologia, Via Pascoli 70, Milan 20133, Italy.
| | - E Laine Wong
- Centre for Nano Science and Technology (CNST@PoliMi), Istituto Italiano di Tecnologia, Via Pascoli 70, Milan 20133, Italy.
| | - Luca Leoncino
- Electron Microscopy Facility, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Giancarlo Terraneo
- Laboratory of Supramolecular and Bio-Nanomaterials (SupraBioNanoLab), Department of Chemistry, Materials, and Chemical Engineering "Giulio Natta", Politecnico di Milano, via L. Mancinelli 7, 20131 Milano, Italy
| | - Munirah D Albaqami
- Chemistry Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Annamaria Petrozza
- Centre for Nano Science and Technology (CNST@PoliMi), Istituto Italiano di Tecnologia, Via Pascoli 70, Milan 20133, Italy.
- Chemistry Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Daniele Cortecchia
- Centre for Nano Science and Technology (CNST@PoliMi), Istituto Italiano di Tecnologia, Via Pascoli 70, Milan 20133, Italy.
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Adhikari S, Orrit M. Progress and perspectives in single-molecule optical spectroscopy. J Chem Phys 2022; 156:160903. [PMID: 35489995 DOI: 10.1063/5.0087003] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
We review some of the progress of single-molecule optical experiments in the past 20 years and propose some perspectives for the coming years. We particularly focus on methodological advances in fluorescence, super-resolution, photothermal contrast, and interferometric scattering and briefly discuss a few of the applications. These advances have enabled the exploration of new emitters and quantum optics; the chemistry and biology of complex heterogeneous systems, nanoparticles, and plasmonics; and the detection and study of non-fluorescing and non-absorbing nano-objects. We conclude by proposing some ideas for future experiments. The field will move toward more and better signals of a broader variety of objects and toward a sharper view of the surprising complexity of the nanoscale world of single (bio-)molecules, nanoparticles, and their nano-environments.
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Affiliation(s)
- Subhasis Adhikari
- Huygens-Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9504, 2333 CA Leiden, The Netherlands
| | - Michel Orrit
- Huygens-Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9504, 2333 CA Leiden, The Netherlands
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Chen Q, Cao S, Xing K, Ning M, Zeng R, Wang Y, Zhao J. Mg 2+-Assisted Passivation of Defects in CsPbI 3 Perovskite Nanocrystals for High-Efficiency Photoluminescence. J Phys Chem Lett 2021; 12:11090-11097. [PMID: 34752097 DOI: 10.1021/acs.jpclett.1c03258] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
CsPbI3 perovskite nanocrystals (NCs) are emerging as promising materials for optoelectronic devices because of their superior optical properties. However, the poor stability of CsPbI3 NCs has become a huge bottleneck for practical applications. Herein, we report an effective strategy of Mg2+-assisted passivation of surface defects to obtain high emission efficiency and stability in CsPbI3 NCs. It is found that the introduced Mg2+ ions are mainly distributed on the surface of NCs and then passivate the NC defects, enhancing radiative decay rate and reducing nonradiative decay rate. As a result, the as-prepared Mg2+-treated CsPbI3 (Mg-CsPbI3) NCs exhibit the highest photoluminescence quantum yield (PLQY) of 95%. The Mg-CsPbI3 NC colloidal solution retains 80% of its original PLQY after 80 days of atmosphere exposure. The red perovskite light-emitting diodes based on the Mg-CsPbI3 NCs demonstrate an external quantum efficiency of 8.4%, which shows an almost 4-fold improvement compared to the devices based on the untreated NCs.
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Affiliation(s)
- Qiuhong Chen
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Ke Xing
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Meijing Ning
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Ruosheng Zeng
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou 215123, China
| | - Jialong Zhao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
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9
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Tao J, Sun C, Zhang H, Wei T, Xu D, Han J, Fan C, Zhang ZH, Bi W. Perovskite energy funnels for efficient white emission. J Colloid Interface Sci 2021; 608:1202-1211. [PMID: 34735855 DOI: 10.1016/j.jcis.2021.10.072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/09/2021] [Accepted: 10/13/2021] [Indexed: 11/19/2022]
Abstract
Doping Mn2+ into CsPbCl3 nanocrystals (NCs) yields strong orange emission, while the related emission in Mn2+ doped CsPbBr3 NCs is impaired seriously. This is mainly ascribed to back energy transfer from the Mn2+ dopant to the host. Doping Mn2+ into perovskites with multiple-quantum-well (MQW) structures may address this issue, where the energy funnels ensure a rapid energy transfer process, and thus resulting in a high photoluminescence quantum yield (PLQY). Here, we have developed an Ag+ assisted Mn2+ doping method in which Mn2+ can be easily doped into Br-based MQW perovskites. In this MQW perovskites, both nanoplatelets (NPLs) and NCs were formed simultaneously, where efficient energy transfer occurred from the NPLs with a higher energy bandgap to the NCs with a smaller energy bandgap, and then to the Mn2+ dopants. White lighting solution with a PLQY up to 98% has been acquired by altering the experimental parameters, such as reaction time and the Pb-to-Mn feed ratio. The successful doping of Mn2+ into CsPbBr3 host has great significance and shows promising application for next-generation white lighting.
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Affiliation(s)
- Jiaqi Tao
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Chun Sun
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
| | - Hu Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Tong Wei
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Da Xu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Jiachen Han
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Chao Fan
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Zi-Hui Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Wengang Bi
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China; Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
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