Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Constructing heterostructures from already synthesized two-dimensional materials is of significant importance. We performed a first-principles study to investigate the electronic properties and interfacial characteristics of Janus MoSH/WSi2N4 van der Waals heterostructure (vdWH) contacts. We demonstrate that the p-type Schottky formed by MoSH/WSi2N4 and MoHS/WSi2N4 has extremely low Schottky barrier heights (SBHs). Due to its excellent charge injection efficiency, Janus MoSH may be regarded as an effective metal contact for WSi2N4 semiconductors. Furthermore, the interfacial characteristics and electronic structure of Janus MoSH/WSi2N4 vdWHs can not only reduce/eliminate SBH, but also forms the transition from p-ShC to n-ShC type and from Schottky contact (ShC) to Ohmic contact (OhC) through the layer spacing and electric field. Our results can offer a fresh method for optoelectronic applications based on metal/semiconductor Janus MoSH/WSi2N4 vdW heterostructures, which have strong potential in optoelectronic applications.

Nanoimprint-induced strain engineering of two-dimensional materials

The high stretchability of two-dimensional (2D) materials has facilitated the possibility of using external strain to manipulate their properties. Hence, strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field. Although various types of strain engineering methods have been proposed, deterministic and controllable generation of the strain in 2D materials remains a challenging task. Here, we report a nanoimprint-induced strain engineering (NISE) strategy for introducing controllable periodic strain profiles on 2D materials. A three-dimensional (3D) tunable strain is generated in a molybdenum disulfide (MoS2) sheet by pressing and conforming to the topography of an imprint mold. Different strain profiles generated in MoS2 are demonstrated and verified by Raman and photoluminescence (PL) spectroscopy. The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds, which enables precise control of the strain magnitudes and distributions in MoS2. Furthermore, a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS2. This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes; therefore, it provides prospects for advances in broad nanoelectronic and optoelectronic devices.

Oxygen-enriched lignin-derived porous carbon nanosheets promote Zn2+ storage

Carbon-based zinc-ion capacitors (ZICs) have sparked intense research enthusiasm because of large power density, good rate capability and cycling stability. However, there is still a long way to go before they achieve commercial applications. Herein, oxygen-enriched lignin-derived porous carbon nanosheets (OLCKs) were prepared by one-step carbonization-activation method, and more O-containing functional groups were generated on the surface of the porous carbon by post-surface functionalization strategy. The self-doped N can change the electron distribution of carbon skeleton and decrease energy barrier of chemical absorption of Zn²⁺/H⁺. Meanwhile, the carbonyl group can significantly enhance the wettability of OLCKs. Furthermore, the diffusion-controlled reactions mainly exist at high and low potential ranges in CV curves, which demonstrates the occurred Faradaic reaction. Consequently, the assembled aqueous ZICs based on OLCKs demonstrate a capacity of 121.7 mAh/g at 0.3 A/g, energy density of 94.3 Wh kg^-1 and good cyclic stability. Besides, the assembled Zn//PVA/LiCl/ZnCl₂(gel)//OLCK4 ZIC can also achieve energy density of 134.4 Wh kg^-1 at 0.1 A/g. This work provides a novel design strategy by incorporating abundant O and N-containing functional groups to enhance energy density.

Enhanced non-layer-dependent piezo-response in sailboat-like vertical molybdenum disulfide nanosheets for piezo-catalytic hydrogen evolution and dye degradation: Effect of microstructure and phase composition

The piezo-response of two-dimensional molybdenum disulfide(MoS₂) only exists at the edge of odd-number layers. It's crucial to design reasonable micro/nano-structures and construct tight interfaces to weaken layer-dependence, enhance energy harvesting, charge transfer and active sites exposure to improve piezoelectricity. The novel sailboat-like-vertical-MoS₂-nanosheets(SVMS), in which abundant vertical MoS₂ nanosheets(∼20 nm, 1-5 layers) are uniformly distributed on horizontal substrate of MoS₂, with abundant vertical interfaces and controllable phase composition are prepared by facile method. The larger geometric-asymmetry enhances mechanical energy capture. Experiment and theory revealed the enhanced in-/out-of-plane polarization, higher piezo-response in multi-directions and abundant active edge sites of SVMS, thereby eliminating the layer-dependence and generating higher piezo-potential. Cooperating with the Mo-S bonds at vertical interfaces, free electrons-holes are efficiently separated and migrated. The piezo-degradation of Rhodamine B(RhB) and hydrogen evolution rate under ultrasonic/stirring are 0.16 min^-1 and 1598 μmolg^-1h^-1 for SVMS(2H) with the highest piezo-response (under ultrasonic wave, stirring and water flow), which are over 1.6 and 3.1 times than few-layer MoS₂ nanosheets. 94% RhB(500 mL) is degraded under water-flow(60 min). The mechanism was proposed. Overall, the design of SVMS with enhanced piezoelectricity was studied and modulated by regulating microstructure and phase composition, which has excellent application potential in fields of environment, energy and novel materials.

2D Functionalized Germananes: Synthesis and Applications

In the realm of 2D layered materials, the monoelemental group 14 Xene, germanene, as the germanium analog of graphene, has emerged as the next prospective candidate. Preceded by silicon, germanium is widely used in the semiconductor industry; thus, germanene is deemed compatible with existing semiconductor technologies. Germanene consists of mixed sp² -sp³ -hybridized networks in a buckled hexagonal honeycomb structure. Chemical exfoliation of Zintl phases, such as CaGe₂ , specifically the topotactical deintercalation in acidic media, removes the alkaline earth metal ions Ca²⁺ , giving rise to layered germanane (germanene with the Ge centers covalently saturated with terminal hydrogen atoms). Diverse variants of functionalized germananes (with covalent group(s) termination) can be obtained by varying the topotactical deintercalation precursors, elevating the game with limitless functionalization possibilities for customizable properties or new functionalities. The preparation of Zintl phases to the details of functionalized and modified germananes and their properties, and the additional exfoliation step to achieve mono- or few-layer germananes, are comprehensively covered. The progress and challenges of 2D functionalized germananes in optoelectronics, catalysis, energy conversion and storage, sensors, and biomedical areas are reviewed. This review provides insight into designing and exploring this class of atomically thin semiconductors in realizing future nanoarchitectonics.

Strain Effects on the Two-Dimensional Cr2N MXene: An Ab Initio Study

Structural, electronic, and magnetic properties of two-dimensional Cr₂N MXene under strain were studied. The uniaxial and biaxial strain was considered from -5 to 5%. Phonon dispersion was calculated; imaginary frequency was not found for both kinds of strain. Phonon density of states displays an interesting relation between strain and optical phonon gaps (OPGs), that it implies tunable thermal conductivity. When we apply biaxial tensile strain, the OPG increases; however, this is not appreciable under uniaxial strain. The electronic properties of the dynamically stable systems were investigated by calculating the band structure and electron localization function (ELF) along the (110) plane. The band structure showed a metallic behavior under compressive strain; nevertheless, under tensile strain, the system has a little indirect band gap of 0.16 eV. By analyzing, the ELF interactions between Cr-N are determined to be a weaker covalent bonding Cr₂N under tensile strain. On the other hand, if the Cr atoms reduce or increase their self-distance, the magnetization alignment changes, also the magnetic anisotropy energy displays out-of-plane spin alignment. These properties extend the potential applications of Cr₂N in the spintronic area as long as they can be grown on substrates with high lattice mismatch, conserving their magnetic properties.

Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi2N4 van der Waals Heterostructure

Following the successful synthesis of single-layer metallic Janus MoSH and semiconducting MoSi₂N₄, we investigate the electronic and interfacial features of metal/semiconductor MoSH/MoSi₂N₄ van der Waals (vdW) contact. We find that the metal/semiconductor MoSH/MoSi₂N₄ contact forms p-type Schottky contact (p-ShC type) with small Schottky barrier (SB), suggesting that Janus MoSH can be considered as an efficient metallic contact to MoSi₂N₄ semiconductor with high charge injection efficiency. The electronic structure and interfacial features of the MoSH/MoSi₂N₄ vdW heterostructure are tunable under strain and electric fields, which give rise to the SB change and the conversion from p-ShC to n-ShC type and from ShC to Ohmic contact. These findings could provide a new pathway for the design of optoelectronic applications based on metal/semiconductor MoSH/MoSi₂N₄ vdW heterostructures.

Mechanical properties of calcium silicate hydrate under uniaxial and biaxial strain conditions: a molecular dynamics study

Calcium silicate hydrate (C-S-H) is the main hydration product of cementitious materials, often experiencing complex stress conditions in practical applications. Therefore, reactive molecular dynamics methods were used to investigate the mechanical response of the atomistic structure of C-S-H under various uniaxial and biaxial strain conditions. The results of uniaxial simulations show that C-S-H exhibits mechanical anisotropy and tension-compression asymmetry due to its layered atomistic structure. By fitting the stress-strain data, a stress-strain relationship that accurately represents the elastoplasticity of C-S-H was developed. The biaxial yield surface obtained from biaxial simulations was ellipsoidal, again reflecting the anisotropy and asymmetry of C-S-H. Four yield criteria (von Mises, Drucker-Prager, Hill, and Liu-Huang-Stout) were further investigated, and it was found that the Liu-Huang-Stout criterion can effectively capture all the major features of the yield surface. During a uniaxial tensile process in the z direction, multi-crack propagation was observed, which was aggravated and weakened by y direction tensile and compressive strains respectively. The results of chemical bond analyses revealed that, for different strain conditions, the Ca_W-O_S and Ca_S-O_S bonds play different roles in resisting deformation.

Effect of Point Defects on Electronic Structure of Monolayer GeS

Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional ones, which substitute for Ge or S in GeS. It was found that the bandgap of GeS with substitutional atoms is close to that of pristine GeS, while the bandgap of GeS with Ge or S vacancies was smaller than that of pristine GeS. In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Defects affect the piezoelectric properties depending on vacancies or substitutional atoms. Especially, GeS with substitutional atoms has almost the same piezoelectric stress coefficients eij as pristine GeS while having lower piezoelectric strain coefficients dij  but still much higher than other 2D materials. It is therefore concluded that Sn can effectively heal Ge vacancy in GeS, keeping high piezoelectric strain coefficients.