Strain-induced bandgap engineering in CsGeX3 (X = I, Br or Cl) perovskites: insights from first-principles calculations

The lead-free perovskite-based heterojunction C2N/CsGeI3: an exploration for superior visible-light absorption

Halide perovskites have distinguished themselves among the numerous optoelectronic materials due to their versatile processing technology and exceptional optical response. Unfortunately, their stability and toxicity from heavy metals severely hamper their development, in addition to the challenge of further improving photovoltaic performance. Hence, a lead-free perovskite-based heterojunction, C2N/CsGeI3, is investigated using a hybrid density functional, including electron structures, charge density differences, optical properties and more. The study reveals the presence of a built-in electric field directed from the CsGeI3 to the C2N layer. Moreover, based on the work function, it is confirmed that the electrons are transferred in a Z-scheme mechanism after the CsGeI3 contacts with the C2N layer. Under light irradiation, the construction of the C2N/CsGeI3 heterojunction significantly enhances optical absorption within the range of visible-light wavelengths. Additionally, the impact of interfacial strain on the C2N/CsGeI3 is explored and discussed. These findings not only suggest that the C2N/CsGeI3 heterojunction holds promise for photovoltaic applications but also provide a theoretical insight into lead-free perovskite-based functional materials.

Hybrid-DFT study of halide perovskites, an energy-efficient material under compressive pressure for piezoelectric applications

Recent studies have reported that lead-halide perovskites are the most efficient energy-harvesting materials. Regardless of their high-output energy and structural stability, lead-based products have risk factors due to their toxicity. Therefore, lead-free perovskites that offer green energy are the expected alternatives. We have taken CsGeX3(X = Cl, Br, and I) as lead-free halide perovskites despite knowing the low power conversion rate. Herein, we have tried to study the mechanisms of enhancement of energy-harvesting capabilities involving an interplay between structure and electronic properties. A density functional theory simulation of these materials shows a decrease in the band gaps, lattice parameters, and volumes with increasing applied pressure. We report the high piezoelectric responses and high electro-mechanical conversion rates, which are intriguing for generating electricity through mechanical stress.

Emerging Halide Perovskite Ferroelectrics

Halide perovskites have gained tremendous attention in the past decade owing to their excellent properties in optoelectronics. Recently, a fascinating property, ferroelectricity, has been discovered in halide perovskites and quickly attracted widespread interest. Compared with traditional perovskite oxide ferroelectrics, halide perovskites display natural advantages such as structural softness, low weight, and easy processing, which are highly desirable in applications pursuing miniaturization and flexibility. This review focuses on the current research progress in halide perovskite ferroelectrics, encompassing the emerging materials systems and their potential applications in ferroelectric photovoltaics, self-powered photodetection, and X-ray detection. The main challenges and possible solutions in the future development of halide perovskite ferroelectric materials are also attempted to be pointed out.

Influence of Sr doping on the photoelectronic properties of CsPbX3 (X = Cl, Br, or I): a DFT investigation

To broaden the application of cesium lead halide perovskites, doping technology has been widely proposed. In this study, we calculated a 12.5% concentration of a Sr-doped CsPbX₃ (X = Cl, Br, or I) perovskite via density functional theory. The results showed that the bandgap energy of the perovskite increased by 0.2-0.3 eV. The high symmetry points of the energy band changed from R to Γ after Sr doping because the Sr doping affected the initial distribution of atomic orbital hybridization. In addition, optical absorption spectra after doping showed an obvious blueshift, whereas the absorption coefficient of CsPb_0.875Sr_0.125X₃ had the same magnitude as undoped CsPbX₃. Moreover, the effective masses of electrons and holes changed within a small range (0.01-0.03 m₀) after Sr doping. According to the findings of this study, the CsPb_0.875Sr_0.125X₃ perovskite is expected to become an ideal candidate material for designing photovoltaic and photoelectric devices.

Electronic and Optical Properties of CsGeX3 (X= Cl, Br, and I) Compounds

We used first-principles calculations to investigate the electrical and optical properties of CsGeX₃ (X = Cl, Br, and I) compounds. These materials present rich and unique physical and chemical phenomena, such as the optimal geometric structure, the electronic band structure, the charge density distribution, and the special van Hove singularities in the electronic density of states. The optical properties cover a slight red shift of the optical gap, corresponding to weak electron-hole interactions, strong absorption coefficients, and weak reflectance spectra. The presented theoretical framework will provide a full understanding of the various phenomena and promising applications for solar cells and other electro-optic materials.