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Wilken M, Muriqi A, Krusenbaum A, Nolan M, Devi A. Targeting Manganese Amidinate and ß-Ketoiminate Complexes as Precursors for Mn-Based Thin Film Deposition. Chemistry 2024:e202401275. [PMID: 38656605 DOI: 10.1002/chem.202401275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 04/23/2024] [Accepted: 04/24/2024] [Indexed: 04/26/2024]
Abstract
With a focus on Mn based organometallic compounds with suitable physico-chemical properties to serve as precursors for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of Mn-containing materials, systematic synthetic approaches with ligand variation, detailed characterization, and theoretical input from density functional theory (DFT) studies are presented. A series of new homoleptic all-nitrogen and mixed oxygen/nitrogen-coordinated Mn(II) complexes bearing the acetamidinate, formamidinate, guanidinate and ß-ketoiminate ligands have been successfully synthesized for the first time. The specific choice of these ligand classes with changes in structure and coordination sphere and side chain variations result in significant structural differences whereby mononuclear and dinuclear complexes are formed. This was supported by density functional theory (DFT) studies. The compounds were thoroughly characterized by single crystal X-ray diffraction, magnetic measurements, mass spectrometry and elemental analysis. To evaluate their suitability as precursors for deposition of Mn-based materials, the thermal properties were investigated in detail. Mn(II) complexes possessing the most promising thermal properties, namely Bis(N,N'-ditertbutylformamidinato)manganese(II) (IV) and Bis(4-(isopropylamino)pent-3-en-2-onato)manganese(II) (ßIII) were used in reactivity studies with DFT to explore their interaction with oxidizing co-reactants such as oxygen and water which will guide future CVD and ALD process development.
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Affiliation(s)
- Martin Wilken
- Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstr. 150, 44801, Bochum, Germany
| | - Arbresha Muriqi
- Tyndall National Institute, University College Cork, Lee Maltings, Cork, T12 R5CP, Ireland
| | - Annika Krusenbaum
- Inorganic Chemistry I, Ruhr University Bochum, Universitätsstr. 150, 44801, Bochum, Germany
| | - Michael Nolan
- Tyndall National Institute, University College Cork, Lee Maltings, Cork, T12 R5CP, Ireland
| | - Anjana Devi
- Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstr. 150, 44801, Bochum, Germany
- Leibniz Institute for Solid State and Materials Research, IFW Dresden, Helmholtzstr. 20, 01069, Dresden, Germany
- Chair of Materials Chemistry, TU Dresden, Bergstr. 66, Dresden, 01069, Germany
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Park H, Choi H, Shin S, Park BK, Kang K, Ryu JY, Eom T, Chung TM. Evaluation of tin nitride (Sn 3N 4) via atomic layer deposition using novel volatile Sn precursors. Dalton Trans 2023; 52:15033-15042. [PMID: 37812132 DOI: 10.1039/d3dt02138f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
Novel Sn precursors, Sn(tbip)2, Sn(tbtp)2, and Sn(tbta)2, were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL2 with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)2 showed the lowest residual weight of 2.7% at 265 °C. Sn3N4 thin films were successfully synthesized using Sn(tbtp)2 as the Sn precursor and NH3 plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy-1 and no need for incubation when the film was deposited at 150-225 °C. The indirect optical bandgap of the Sn3N4 film was approximately 1-1.2 eV, as determined through ultraviolet-visible spectroscopy. Therefore, this study suggests that the Sn3N4 thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices.
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Affiliation(s)
- Hyeonbin Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
- Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Heenang Choi
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
- Department of Chemistry, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Sunyoung Shin
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
| | - Bo Keun Park
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
- Department of Chemical Convergence Materials, University of Science and Technology (UST) 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Ji Yeon Ryu
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
| | - Taeyong Eom
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
| | - Taek-Mo Chung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea.
- Department of Chemical Convergence Materials, University of Science and Technology (UST) 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
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Shaw TE, Ali Z, Currie TM, Berriel SN, Butkus B, Wagner JT, Preradovic K, Yap GPA, Green JC, Banerjee P, Sattelberger AP, McElwee-White L, Jurca T. Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37450887 DOI: 10.1021/acsami.3c04074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The synthesis, characterization, and thermogravimetric analysis of tris(N,N'-di-isopropylacetamidinate)molybdenum(III), Mo(iPr-AMD)3, are reported. Mo(iPr-AMD)3 is a rare example of a homoleptic mononuclear complex of molybdenum(III) and fills a longstanding gap in the literature of transition metal(III) trisamidinate complexes. Thermogravimetric analysis (TGA) reveals excellent volatilization at elevated temperatures, pointing to potential applications as a vapor phase precursor for higher temperature atomic layer deposition (ALD), or chemical vapor deposition (CVD) growth of Mo-based materials. The measured TGA temperature window was 200-314 °C for samples in the 3-20 mg range. To validate the utility of Mo(iPr-AMD)3, we demonstrate aerosol-assisted CVD growth of MoO3 from benzonitrile solutions of Mo(iPr-AMD)3 at 500 °C using compressed air as the carrier gas. The resulting films are characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. We further demonstrate the potential for ALD growth at 200 °C with a Mo(iPr-AMD)3/Ar purge/300 W O2 plasma/Ar purge sequence, yielding ultrathin films which retain a nitride/oxynitride component. Our results highlight the broad scope utility and potential of Mo(iPr-AMD)3 as a stable, high-temperature precursor for both CVD and ALD processes.
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Affiliation(s)
- Thomas E Shaw
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
- Renewable Energy and Chemical Transformations Cluster, University of Central Florida, Orlando, Florida 32816, United States
| | - Zahra Ali
- Department of Chemistry, University of Florida, Gainesville, Florida 32611, United States
| | - Taylor M Currie
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
| | - S Novia Berriel
- Renewable Energy and Chemical Transformations Cluster, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science & Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Brian Butkus
- Department of Materials Science & Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - J Tyler Wagner
- Department of Chemistry, University of Florida, Gainesville, Florida 32611, United States
| | - Konstantin Preradovic
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
| | - Glenn P A Yap
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
| | - Jennifer C Green
- Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, U.K
| | - Parag Banerjee
- Renewable Energy and Chemical Transformations Cluster, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science & Engineering, University of Central Florida, Orlando, Florida 32816, United States
- NanoScience & Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Alfred P Sattelberger
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
- NanoScience & Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Lisa McElwee-White
- Department of Chemistry, University of Florida, Gainesville, Florida 32611, United States
| | - Titel Jurca
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
- Renewable Energy and Chemical Transformations Cluster, University of Central Florida, Orlando, Florida 32816, United States
- NanoScience & Technology Center, University of Central Florida, Orlando, Florida 32826, United States
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Boysen N, Wree JL, Zanders D, Rogalla D, Öhl D, Schuhmann W, Devi A. High-Performance Iridium Thin Films for Water Splitting by CVD Using New Ir(I) Precursors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52149-52162. [PMID: 36351209 DOI: 10.1021/acsami.2c13865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Thin films of iridium can be utilized in a wide range of applications and are particularly interesting for catalytic transformations. For the scalable deposition of functional Ir thin films, metalorganic chemical vapor deposition (MOCVD) is the method of choice, for which organometallic precursors that embody a high volatility and thermal stability need to be specifically tailored. Herein, we report the synthesis, analysis, and evaluation of new volatile Ir(I)-1,5-cyclooctadiene complexes bearing all-nitrogen coordinating guanidinate (N,N'-diisopropyl-2-dimethylamido-guanidinate (DPDMG)), amidinate (N,N'-diisopropyl-amidinate (DPAMD)), and formamidinate (N,N'-diisopropyl-formamidinate (DPfAMD)) ligands. The amidinate-based Ir complex [Ir(COD)(DPAMD)] together with O2 was implemented in MOCVD experiments resulting in highly crystalline, dense, and conductive Ir films on a variety of substrate materials. The Ir deposits achieved outstanding electrochemical performance with overpotentials in the range of 50 mV at -10 mA·cm-2 for catalytic hydrogen evolution reaction (HER) in acidic solution. The ability to deposit Ir layers via MOCVD exhibiting promising functional properties is a significant step toward large-scale applications.
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Affiliation(s)
- Nils Boysen
- Inorganic Materials Chemistry (IMC), Ruhr University Bochum, 44801 Bochum, Germany
| | - Jan-Lucas Wree
- Inorganic Materials Chemistry (IMC), Ruhr University Bochum, 44801 Bochum, Germany
| | - David Zanders
- Inorganic Materials Chemistry (IMC), Ruhr University Bochum, 44801 Bochum, Germany
| | | | - Denis Öhl
- Analytical Chemistry─Center for Electrochemical Sciences (CES), Faculty of Chemistry and Biochemistry, Ruhr University Bochum, 44801 Bochum, Germany
| | - Wolfgang Schuhmann
- Analytical Chemistry─Center for Electrochemical Sciences (CES), Faculty of Chemistry and Biochemistry, Ruhr University Bochum, 44801 Bochum, Germany
| | - Anjana Devi
- Inorganic Materials Chemistry (IMC), Ruhr University Bochum, 44801 Bochum, Germany
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Recent Advances in Theoretical Development of Thermal Atomic Layer Deposition: A Review. NANOMATERIALS 2022; 12:nano12050831. [PMID: 35269316 PMCID: PMC8912810 DOI: 10.3390/nano12050831] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 02/24/2022] [Accepted: 02/25/2022] [Indexed: 02/06/2023]
Abstract
Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted increasing attention from both experimentalists and theoreticians in the last few decades. ALD is well-known to produce conformal, uniform, and pinhole-free thin films across the surface of substrates. Due to these advantages, ALD has found many engineering and biomedical applications. However, drawbacks of ALD should be considered. For example, the reaction mechanisms cannot be thoroughly understood through experiments. Moreover, ALD conditions such as materials, pulse and purge durations, and temperature should be optimized for every experiment. It is practically impossible to perform many experiments to find materials and deposition conditions that achieve a thin film with desired applications. Additionally, only existing materials can be tested experimentally, which are often expensive and hazardous, and their use should be minimized. To overcome ALD limitations, theoretical methods are beneficial and essential complements to experimental data. Recently, theoretical approaches have been reported to model, predict, and optimize different ALD aspects, such as materials, mechanisms, and deposition characteristics. Those methods can be validated using a different theoretical approach or a few knowledge-based experiments. This review focuses on recent computational advances in thermal ALD and discusses how theoretical methods can make experiments more efficient.
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