Water vapor and hydrogen gas diffusion barrier characteristics of Al2O3-alucone multi-layer structures for flexible OLED display applications

Conformal Zn-Benzene Dithiol Thin Films for Temperature-Sensitive Electronics Grown via Industry-Feasible Atomic/Molecular Layer Deposition Technique

The atomic/molecular layer deposition (ALD/MLD) technique combining both inorganic and organic precursors is strongly emerging as a unique tool to design exciting new functional metal-organic thin-film materials. Here, this method is demonstrated to work even at low deposition temperatures and can produce highly stable and conformal thin films, fulfilling the indispensable prerequisites of today's 3D microelectronics and other potential industrial applications. This new ALD/MLD process is developed for Zn-organic thin films grown from non-pyrophoric bis-3-(N,N-dimethylamino)propyl zinc [Zn(DMP)2] and 1,4-benzene dithiol (BDT) precursors. This process yields air-stable Zn-BDT films with appreciably high growth per cycle (GPC) of 4.5 Å at 60 °C. The Zn/S ratio is determined at 0.5 with Rutherford backscattering spectrometry (RBS), in line with the anticipated (Zn─S─C6H6─S─)n bonding scheme. The high degree of conformality is shown using lateral high-aspect-ratio (LHAR) test substrates; scanning electron microscopy (SEM) analysis shows that the film penetration depth (PD) into the LHAR structure with cavity height of 500 nm is over 200 µm (i.e., aspect-ratio of 400). It is anticipated that the electrically insulating metal-organic Zn-BDT thin films grown via the solvent-free ALD/MLD technique, can be excellent barrier layers for temperature-sensitive and flexible electronic devices.

Nanomolecularly-induced Effects at Titania/Organo-Diphosphonate Interfaces for Stable Hybrid Multilayers with Emergent Properties

Nanoscale hybrid inorganic-organic multilayers are attractive for accessing emergent phenomena and properties through superposition of nanomolecularly-induced interface effects for diverse applications. Here, we demonstrate the effects of interfacial molecular nanolayers (MNLs) of organo-diphosphonates on the growth and stability of titania nanolayers during the synthesis of titania/MNL multilayers by sequential atomic layer deposition and single-cycle molecular layer deposition. Interfacial organo-diphosphonate MNLs result in ∼20-40% slower growth of amorphous titania nanolayers and inhibit anatase nanocrystal formation from them when compared to amorphous titania grown without MNLs. Both these effects are more pronounced in multilayers with aliphatic backbone-MNLs and likely related to impurity incorporation and incomplete reduction of the titania precursor indicated by our spectroscopic analyses. In contrast, both MNLs result in two-fold higher titania nanolayer roughness, suggesting that roughening is primarily due to MNL bonding chemistry. Such MNL-induced effects on inorganic nanolayer growth rate, roughening, and stability are germane to realizing high-interface-fraction hybrid nanolaminate multilayers.

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Ultrathin flexible encapsulation (UFE) using multilayered films has prospects for practical applications, such as implantable and wearable electronics. However, existing investigations of the effect of mechanical bending strains on electrical properties after the encapsulation procedure provide insufficient information for improving the electrical stability of ultrathin silicon nanomembrane (Si NM)-based metal oxide semiconductor capacitors (MOSCAPs). Here, we used atomic layer deposition and molecular layer deposition to generate 3.5 dyads of alternating 11 nm Al2O3 and 3.5 nm aluminum alkoxide (alucone) nanolaminates on flexible Si NM-based MOSCAPs. Moreover, we bent the MOSCAPs inwardly to radii of 85 and 110.5 mm and outwardly to radii of 77.5 and 38.5 mm. Subsequently, we tested the unbent and bent MOSCAPs to determine the effect of strain on various electrical parameters, namely the maximum capacitance, minimum capacitance, gate leakage current density, hysteresis voltage, effective oxide charge, oxide trapped charge, interface trap density, and frequency dispersion. The comparison of encapsulated and unencapsulated MOSCAPs on these critical parameters at bending strains indicated that Al2O3/alucone nanolaminates stabilized the electrical and interfacial characteristics of the Si NM-based MOSCAPs. These results highlight that ultrathin Al2O3/alucone nanolaminates are promising encapsulation materials for prolonging the operational lifetimes of flexible Si NM-based metal oxide semiconductor field-effect transistors.

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

The combined atomic/molecular layer deposition (ALD/MLD) technique is emerging as a state-of-the-art synthesis route for new metal-organic thin-film materials with a multitude of properties by combining those of the inorganic...