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Wu J, Huang A, Hu H, Gao X, Chen Z. Construction and enhancement of built-in electric field for efficient oxygen evolution reaction. J Colloid Interface Sci 2024; 674:677-685. [PMID: 38950466 DOI: 10.1016/j.jcis.2024.06.168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 06/10/2024] [Accepted: 06/23/2024] [Indexed: 07/03/2024]
Abstract
The construction and regulation of built-in electric field (BIEF) are considered effective strategies for enhancing the oxygen evolution reaction (OER) performance of transition metal-based electrocatalysts. Herein, we present a strategy to regulate the electronic structure of nickel-iron layered double hydroxide (NiFe-LDH) by constructing and enhancing the BIEF induced by in-situ heterojunction transformation. This concept is demonstrated through the design and synthesis of Ag2S@S/NiFe-LDH (p-n heterojunction) and Ag@S/NiFe-LDH (Mott-Schottky heterojunction). Benefiting from the larger BIEF of Mott-Schottky heterojunction, efficient electron transfer occurs at the interface between silver (Ag) and NiFe-LDH. As a result, Ag@S/NiFe-LDH exhibits excellent OER performance, requiring only a 232 mV overpotential at 1 M KOH to achieve a current density of 100 mA cm-2, with a small Tafel slope of 73 mV dec-1, as well as excellent electrocatalytic durability. Density functional theory (DFT) calculations further verified that stronger BIEF in Mott-Schottky heterojunction enhances the electron interaction at the interfaces, reduces the energy barrier for the rate-determining step (RDS), and accelerates the OER kinetics. This work provides an effective strategy for designing catalyst with larger BIEF to enhance electrocatalytic activity.
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Affiliation(s)
- Jie Wu
- Key Laboratory of the Ministry of Education for Advanced Catalysis Material, College of Chemistry and Materials Science, Zhejiang Normal University, Jinhua 321004, China
| | - Anqi Huang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Material, College of Chemistry and Materials Science, Zhejiang Normal University, Jinhua 321004, China
| | - Huan Hu
- Key Laboratory of the Ministry of Education for Advanced Catalysis Material, College of Chemistry and Materials Science, Zhejiang Normal University, Jinhua 321004, China
| | - Xuehui Gao
- Key Laboratory of the Ministry of Education for Advanced Catalysis Material, College of Chemistry and Materials Science, Zhejiang Normal University, Jinhua 321004, China.
| | - Zhongwei Chen
- State Key Laboratory of Catalysis-Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China; Power Battery and Systems Research Center, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.
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2
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An J, Zhang N, Tan F, Zhao X, Chang C, Lanza M, Li S. Programmable Optoelectronic Synaptic Transistors Based on MoS 2/Ta 2NiS 5 Heterojunction for Energy-Efficient Neuromorphic Optical Operation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403103. [PMID: 38778502 DOI: 10.1002/smll.202403103] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2024] [Revised: 05/14/2024] [Indexed: 05/25/2024]
Abstract
The optoelectronic synaptic transistors with various functions, broad spectral perception, and low power consumption are an urgent need for the development of advanced optical neural network systems. However, it remains a great challenge to realize the functional diversification of the systems on a single device. 2D van der Waals (vdW) materials can combine unique properties by stacking with each other to form heterojunctions, which may provide a strategy for solving this problem. Herein, an all-2D vdW heterojunction-based programmable optoelectronic synaptic transistor based on MoS2/Ta2NiS5 heterojunctions is demonstrated. The device implements reconfigurable, multilevel non-volatile memory (NVM) states through sequential modulation of multiple optical and electrical stimuli to achieve broadband (532-808 nm), energy-efficient (17.2 fJ), hetero-synaptic functionality in a bionic manner. The intrinsic working mechanisms of the photogating effect caused by band alignment and the interfacial trapping defect modulation induced by gate voltage are revealed by Kelvin-probe force microscopy (KPFM) measurements and carrier transport analysis. Overall, the (opto)electronic synaptic weight controllability for combined in-sensor and in-memory logic processors is realized by the heterojunction properties. The proposed findings facilitate the technical realization of generic all 2D hetero-synapses for future artificial vision systems, opto-logical systems, and Internet of Things (IoT) entities.
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Affiliation(s)
- Junru An
- State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
- School of Materials Science and Engineering, Hainan University, No. 58 Renmin Road, Haikou, 570228, P. R. China
| | - Nan Zhang
- State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Fan Tan
- State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Xingyu Zhao
- State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Chunlu Chang
- State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Mario Lanza
- Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia
| | - Shaojuan Li
- State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
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Zheng K, Vegge T, Castelli IE. Giant In-Plane Flexoelectricity and Radial Polarization in Janus IV-VI Monolayers and Nanotubes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19369-19378. [PMID: 38587821 DOI: 10.1021/acsami.4c01527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Nanotubes have established a new paradigm in nanoscience because of their atomically thin geometries and intriguing properties. However, because of their typical metastability compared to their 2D and 3D counterparts, it is still fundamentally challenging to synthesize nanotubes with controlled size. New strategies have been suggested for synthesizing nanotubes with a controlled geometry. One of these is considering Janus 2D layers, which can self-roll to form a nanotube. Herein, we study 412 nanotubes (along the armchair and zigzag directions) based on 36 Janus IV-VI compounds using density functional theory (DFT) calculations. By investigating the energy-radius relationship using structural models and Bayesian predictions, the most stable nanotubes show negative strain energies and radii below 20 Å, where curvature effects can play a significant role. The band structures show that the selected nanotubes exhibit sizable band gaps and size-dependent electronic properties. More strikingly, the flexoelectricity along the in-plane directions and radial directions in these nanotubes is significantly larger than that in other nanotubes and their 2D counterparts. This work opens up an avenue of structure-property relationships of Janus IV-VI nanotubes and demonstrates giant flexoelectricity in these nanotubes for future electronic and energy applications.
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Affiliation(s)
- Kai Zheng
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800 Lyngby Kgs., Denmark
| | - Tejs Vegge
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800 Lyngby Kgs., Denmark
| | - Ivano E Castelli
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800 Lyngby Kgs., Denmark
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Wang W, Xiao Y, Li T, Lu X, Xu N, Cao Y. Piezo-photovoltaic Effect in Monolayer 2H-MoS 2. J Phys Chem Lett 2024; 15:3549-3553. [PMID: 38526184 DOI: 10.1021/acs.jpclett.4c00470] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
Noncentrosymmetric bulk materials effectively convert light energy into electricity by making use of the bulk photovoltaic effect (BPVE). However, whether such an effect persists when reducing the thickness of materials down to atomic-scale remains to be revealed. Here, we show the piezo-photovoltaic effect in atomically thin two-dimensional materials, where the strain-induced polarization can generate photovoltaic outputs in the noncentrosymmetric mono- and few-layer 2H-MoS2 crystals. The photocurrent is enhanced by orders of magnitude when the MoS2 crystals experience an in-plane strain of about 0.2%, with photopower-dependent responsivity up to 0.1 A/W that rivals other state-of-the-art BPVE materials. In addition, studies on the spatial distributions of photocurrents on MoS2 with a controlled number of layers also allow us to disentangle various factors that couple the piezoelectricity and photovoltaics. Therefore, our results also provide insights into the mechanisms of the piezo-photovoltaic effect in two-dimensional materials with thicknesses at the atomic-scale limit.
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Affiliation(s)
- Wei Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yu Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Teng Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Xiangchao Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Na Xu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yang Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, P. R. China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, P. R. China
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Kim J, Rhee D, Jung M, Cheon GJ, Kim K, Kim JH, Park JY, Yoon J, Lim DU, Cho JH, Kim IS, Son D, Jariwala D, Kang J. Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors. ACS NANO 2024; 18:1073-1083. [PMID: 38100089 DOI: 10.1021/acsnano.3c10453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The significance of metal-semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal-semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal-oxide-semiconductor (channel)-semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition.
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Affiliation(s)
- Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Gang Jin Cheon
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kangsan Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jae Hyung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ji Yun Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jiyong Yoon
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong Un Lim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - In Soo Kim
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Donghee Son
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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Cao A, Li S, Chen H, Deng M, Xu X, Shang L, Li Y, Cui A, Hu Z. A polar-switchable and controllable negative phototransistor for information encryption. MATERIALS HORIZONS 2023; 10:5099-5109. [PMID: 37691576 DOI: 10.1039/d3mh01120h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2023]
Abstract
Anomalous negative phototransistors have emerged as a distinct research area, characterized by a decrease in channel current under light illumination. Recently, their potential applications have been expanded beyond photodetection. Despite the considerable attention given to negative phototransistors, negative photoconductance (NPC) in particular remains relatively unexplored, with limited research advancements as compared to well-established positive phototransistors. In this study, we designed ferroelectric field-effect transistors (FeFETs) based on the WSe2/CIPS van der Waals (vdW) vertical heterostructures with a buried-gated architecture. The transistor exhibits NPC and positive photoconductance (PPC), demonstrating the significant role of ferroelectric polarization in the distinctive photoresponse. The observed inverse photoconductance can be attributed to the dynamic switching of ferroelectric polarization and interfacial charge transfer processes, which have been investigated experimentally and theoretically using Density Functional Theory (DFT). The unique phenomena enable the coexistence of controllable and polarity-switchable PPC and NPC. The novel feature holds tremendous potential for applications in optical encryption, where the specific gate voltages and light can serve as universal keys to achieve modulation of conductivity. The ability to manipulate conductivity in response to optical stimuli opens up new avenues for developing secure communication systems and data storage technologies. Harnessing this feature enables the design of advanced encryption schemes that rely on the unique properties of our material system. The study not only advances the development of NPC but also paves the way for more robust and efficient methods of optical encryption, ensuring the confidentiality and integrity of critical information in various domains, including data transmission, and information security.
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Affiliation(s)
- Aiping Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Shubing Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Hongli Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xionghu Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Anyang Cui
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Wei H, Xu Z, Ni Y, Yang L, Sun L, Gong J, Zhang S, Qu S, Xu W. Mixed-Dimensional Nanoparticle-Nanowire Channels for Flexible Optoelectronic Artificial Synapse with Enhanced Photoelectric Response and Asymmetric Bidirectional Plasticity. NANO LETTERS 2023; 23:8743-8752. [PMID: 37698378 DOI: 10.1021/acs.nanolett.3c02836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
A mixed-dimensional dual-channel synaptic transistor composed of inorganic nanoparticles and organic nanowires was fabricated to expand the photoelectric gain range. The device can actualize the sensitization features of the nociceptor and shows improved responsiveness to visible light. Under electrical pulses with different polarities, the apparatus exhibits reconfigurable asymmetric bidirectional plasticity. Moreover, the devices demonstrate good operational tolerance and mechanical stability, retaining more than 60% of their maximum responsiveness after 100 consecutive/bidirectional and 1000 flex/flat operations. The improved photoelectric response of the device endows a high image recognition accuracy of greater than 80%. Asymmetric bidirectional plasticity is used as punishment/reward in a psychological experiment to emulate the improvement of learning motivation and enables real-time forward and backward deflection (+7 and -25°) of artificial muscle. The mixed-dimensional optoelectronic artificial synapses with switchable behavior and electron/hole transport type have important prospects for neuromorphic processing and artificial somatosensory nerves.
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Affiliation(s)
- Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
- Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
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Rao TS, Kundu S, Bannur B, George SJ, Kulkarni GU. Emulating Ebbinghaus forgetting behavior in a neuromorphic device based on 1D supramolecular nanofibres. NANOSCALE 2023; 15:7450-7459. [PMID: 37013963 DOI: 10.1039/d3nr00195d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Mimicking synaptic functions in hardware devices is a crucial step in realizing brain-like computing beyond the von Neumann architecture. 1D nanomaterials with spatial extensions of a few μm, similar to biological neurons, gain significance given the ease of electrical transport as well as directionality. Herein, we report a two-terminal optically active device based on 1D supramolecular nanofibres consisting of CS (coronene tetracarboxylate) and DMV (dimethyl viologen) forming alternating D-A (donor-acceptor) pairs, emulating synaptic functions such as the STP (short-term potentiation), LTP (long-term potentiation), PPF (paired-pulse facilitation), STDP (spike-time dependent plasticity) and learning-relearning behaviors. In addition, an extensive study on the less explored Ebbinghaus forgetting curve has been carried out. The supramolecular nanofibres being light sensitive, the potential of the device as a visual system is demonstrated using a 3 × 3 pixel array.
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Affiliation(s)
- Tejaswini S Rao
- Chemistry & Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore-560064, India.
| | - Suman Kundu
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bangalore-562162, India
| | - Bharath Bannur
- Chemistry & Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore-560064, India.
| | - Subi J George
- Supramolecular Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India
| | - Giridhar U Kulkarni
- Chemistry & Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore-560064, India.
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9
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Feng P, Zhao S, Dang C, He S, Li M, Zhao L, Gao L. Improving the photoresponse performance of monolayer MoS 2photodetector via local flexoelectric effect. NANOTECHNOLOGY 2022; 33:255204. [PMID: 35287121 DOI: 10.1088/1361-6528/ac5da1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 03/14/2022] [Indexed: 06/14/2023]
Abstract
Strain engineering is an effective means of modulating the optical and electrical properties of two-dimensional materials. The flexoelectric effect caused by inhomogeneous strain exists in most dielectric materials, which breaks the limit of the materials' non-centrosymmetric structure for piezoelectric effect. However, there is a lack of understanding of the impact on optoelectronic behaviour of monolayer MoS2photodetector via local flexoelectric effect triggered by biaxial strain. In this paper, we develop a probe tip (Pt)-MoS2-Au asymmetric Schottky barrier photodetector based on conductive atomic force microscopy to investigate the impact of flexoelectric effect on the photoresponse performance. Consequently, when the probe force increases from 24 nN to 720 nN, the photocurrent, responsivity and detectivity increase 28.5 times, 29.6 times and 5.3 times at forward bias under 365 nm light illumination, respectively. These results indicate that local flexoelectric effect plays a critical role to improve the photoresponse performance of photodetector. Our approach suggests a new route to improve the performance of photodetectors by introducing local flexoelectric polarization field, offering the potential for the application of strain modulated photoelectric devices.
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Affiliation(s)
- Pu Feng
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Sixiang Zhao
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Congcong Dang
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Sixian He
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Ming Li
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Liancheng Zhao
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Liming Gao
- Institute of Electronic Materials and Technology, School of Material Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
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