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Park T, Kim M, Lee EK, Hur J, Yoo H. Overcoming Downscaling Limitations in Organic Semiconductors: Strategies and Progress. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306468. [PMID: 37857588 DOI: 10.1002/smll.202306468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/30/2023] [Indexed: 10/21/2023]
Abstract
Organic semiconductors have great potential to revolutionize electronics by enabling flexible and eco-friendly manufacturing of electronic devices on plastic film substrates. Recent research and development led to the creation of printed displays, radio-frequency identification tags, smart labels, and sensors based on organic electronics. Over the last 3 decades, significant progress has been made in realizing electronic devices with unprecedented features, such as wearable sensors, disposable electronics, and foldable displays, through the exploitation of desirable characteristics in organic electronics. Neverthless, the down-scalability of organic electronic devices remains a crucial consideration. To address this, efforts are extensively explored. It is of utmost importance to further develop these alternative patterning methods to overcome the downscaling challenge. This review comprehensively discusses the efforts and strategies aimed at overcoming the limitations of downscaling in organic semiconductors, with a particular focus on four main areas: 1) lithography-compatible organic semiconductors, 2) fine patterning of printing methods, 3) organic material deposition on pre-fabricated devices, and 4) vertical-channeled organic electronics. By discussing these areas, the full potential of organic semiconductors can be unlocked, and the field of flexible and sustainable electronics can be advanced.
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Affiliation(s)
- Taehyun Park
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Minseo Kim
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Eun Kwang Lee
- Department of Chemical Engineering, Pukyong National University, Busan, 48513, Republic of Korea
| | - Jaehyun Hur
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
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Xuyao S, Kim SB, Jung H, Kim J, Mo J, Jeong YJ, Jang J, An TK, Kim YH, Jeon J. Well-Balanced Ambipolar Charge Transport of Diketopyrrolepyrrole-Based Copolymers: Organic Field-Effect Transistors and High-Voltage Logic Applications. Macromol Rapid Commun 2024; 45:e2300271. [PMID: 37400426 DOI: 10.1002/marc.202300271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Revised: 06/14/2023] [Accepted: 06/20/2023] [Indexed: 07/05/2023]
Abstract
A poly (3,6-bis(thiophen-2-yl)-2,5-bis(2-decyltetradecyl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione-co-(2,3-bis(phenyl)acrylonitrile)) (PDPADPP) copolymer, composed of diketopyrrolopyrrole (DPP) and a cyano (nitrile) group with a vinylene spacer linking two benzene rings, is synthesized via a palladium-catalyzed Suzuki coupling reaction. The electrical performance of PDPADPP in organic field-effect transistors (OFETs) and circuits is investigated. The OFETs based on PDPADPP exhibit typical ambipolar transport characteristics, with the as-cast OFETs demonstrating low field-effect hole and electron mobility values of 0.016 and 0.004 cm2 V-1 s-1 , respectively. However, after thermal annealing at 240 °C, the OFETs exhibit improved transport characteristics with highly balanced ambipolar transport, showing average hole and electron mobility values of 0.065 and 0.116 cm2 V-1 s-1 , respectively. To verify the application of the PDPADPP OFETs in high-voltage logic circuits, compact modeling using the industry-standard small-signal Berkeley short-channel IGFET model (BSIM) is performed, and the logic application characteristics are evaluated. The circuit simulation results demonstrate excellent logic application performance of the PDPADPP-based ambipolar transistor and illustrate that the device annealed at 240 °C exhibits ideal circuit characteristics.
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Affiliation(s)
- Song Xuyao
- Department of Chemistry and RIGET, Gyeongsang National University, Jinju, 52828, South Korea
| | - Sang Beom Kim
- Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hanggyo Jung
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jaekyum Kim
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Jaewan Mo
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Yong Jin Jeong
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
- Department of Materials Science and Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Tae Kyu An
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
- Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Yun-Hi Kim
- Department of Chemistry and RIGET, Gyeongsang National University, Jinju, 52828, South Korea
| | - Jongwook Jeon
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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Zhou Y, Zhang K, Chen Z, Zhang H. Molecular Design Concept for Enhancement Charge Carrier Mobility in OFETs: A Review. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6645. [PMID: 37895626 PMCID: PMC10607980 DOI: 10.3390/ma16206645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 10/09/2023] [Accepted: 10/09/2023] [Indexed: 10/29/2023]
Abstract
In the last two decades, organic field-effect transistors (OFETs) have garnered increasing attention from the scientific and industrial communities. The performance of OFETs can be evaluated based on three factors: the charge transport mobility (μ), threshold voltage (Vth), and current on/off ratio (Ion/off). To enhance μ, numerous studies have concentrated on optimizing charge transport within the semiconductor layer. These efforts include: (i) extending π-conjugation, enhancing molecular planarity, and optimizing donor-acceptor structures to improve charge transport within individual molecules; and (ii) promoting strong aggregation, achieving well-ordered structures, and reducing molecular distances to enhance charge transport between molecules. In order to obtain a high charge transport mobility, the charge injection from the electrodes into the semiconductor layer is also important. Since a suitable frontier molecular orbitals' level could align with the work function of the electrodes, in turn forming an Ohmic contact at the interface. OFETs are classified into p-type (hole transport), n-type (electron transport), and ambipolar-type (both hole and electron transport) based on their charge transport characteristics. As of now, the majority of reported conjugated materials are of the p-type semiconductor category, with research on n-type or ambipolar conjugated materials lagging significantly behind. This review introduces the molecular design concept for enhancing charge carrier mobility, addressing both within the semiconductor layer and charge injection aspects. Additionally, the process of designing or converting the semiconductor type is summarized. Lastly, this review discusses potential trends in evolution and challenges and provides an outlook; the ultimate objective is to outline a theoretical framework for designing high-performance organic semiconductors that can advance the development of OFET applications.
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Affiliation(s)
| | | | | | - Haichang Zhang
- Key Laboratory of Rubber-Plastics of Ministry of Education, Shandong Province (QUST), School of Polymer Science & Engineering, Qingdao University of Science & Technology, 53-Zhengzhou Road, Qingdao 266042, China; (Y.Z.); (K.Z.); (Z.C.)
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