MoS2 and Janus (MoSSe) based 2D van der Waals heterostructures: emerging direct Z-scheme photocatalysts

Two-Dimensional GeC/MXY (M = Zr, Hf; X, Y = S, Se) Heterojunctions Used as Highly Efficient Overall Water-Splitting Photocatalysts

Hydrogen generation by photocatalytic water-splitting holds great promise for addressing the serious global energy and environmental crises, and has recently received significant attention from researchers. In this work, a method of assembling GeC/MXY (M = Zr, Hf; X, Y = S, Se) heterojunctions (HJs) by combining GeC and MXY monolayers (MLs) to construct direct Z-scheme photocatalytic systems is proposed. Based on first-principles calculations, we found that all the GeC/MXY HJs are stable van der Waals (vdW) HJs with indirect bandgaps. These HJs possess small bandgaps and exhibit strong light-absorption ability across a wide range. Furthermore, the built-in electric field (BIEF) around the heterointerface can accelerate photoinduced carrier separation. More interestingly, the suitable band edges of GeC/MXY HJs ensure sufficient kinetic potential to spontaneously accomplish water redox reactions under light irradiation. Overall, the strong light-harvesting ability, wide light-absorption range, small bandgaps, large heterointerfacial BIEFs, suitable band alignments, and carrier migration paths render GeC/MXY HJs highly efficient photocatalysts for overall water decomposition.

Theoretical prediction of the electronic structure, optical properties and contact characteristics of a type-I MoS2/MoGe2N4 heterostructure towards optoelectronic devices

Recently, the combination of two different two-dimensional (2D) semiconductors to generate van der Waals (vdW) heterostructures has emerged as an effective strategy to tailor their physical properties, paving the way for the development of next-generation devices with improved performance and functionality. In this work, we designed an MoS2/MoGe2N4 heterostructure and explored its electronic structures, optical properties and contact characteristics using first-principles calculations. The MoS2/MoGe2N4 heterostructure is predicted to be energetically, thermally and dynamically stable, indicating its feasibility for experimental synthesis in the future. The MoS2/MoGe2N4 heterostructure forms type-I band alignment, suggesting that it can be considered as a promising material for optoelectronic devices, such as light-emitting diodes, and in laser applications. Furthermore, the type-I MoS2/MoGe2N4 heterostructure has enhanced optical absorption in both the visible and ultraviolet regions. More interestingly, the electronic properties and contact characteristics of the MoS2/MoGe2N4 heterostructure can be tailored by applying in-plane biaxial strain. Under the application of compressive and tensile strains, transformations between type-I and type-II band alignments and between semiconductor and metal can be achieved in the MoS2/MoGe2N4 heterostructure. Our findings could provide useful guidance for experimental synthesis of materials based on the MoS2/MoGe2N4 heterostructure for electronic and optoelectronic applications.

Tunable electronic and photoelectric properties of Janus group-III chalcogenide monolayers and based heterostructures

Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered. The results showed that the Janus Se-In-Ga-S and S-In-Ga-Se monolayers exhibit semiconducting characteristics with the band gaps of 1.295 eV and 1.752 eV, respectively. Furthermore, the different stacking configurations and surface termination at interface can realize the transition of band alignment between type I and type II due to the interlayer coupling. Moreover, we systematically investigated the photoelectric properties of Janus group-III chalcogenide heterostructures and predicated an optimized power conversion efficiency of 16.2%. These findings can aid in comprehending the customized characteristics of Janus group-III chalcogenide heterostructures, offering theoretical guidance for creating innovative photoelectric devices.

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

We present the fabrication of a MoS2-xSex thin film from a co-sputtering process using MoS2 and MoSe2 commercial targets with 99.9% purity. The sputtering of the MoS2 and MoSe2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS2-xSex phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS2-xSex thin film, indicated by a blue shift in the A1g and E1g vibrational modes at 355 cm-1 and 255 cm-1, respectively. This work is complemented by computing the thermodynamic stability of a MoS2-xSex phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials' fabrication and target latent applications of such structures.

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices. In this study, we have theoretically designed a metal/semiconductor heterostructure composed of NbS2 and Janus MoSSe, and conducted a thorough investigation of its electronic properties and the formation of contact barriers through first-principles calculations. The effects of stacking configurations and the influence of external electric fields in enhancing the tunability of the NbS2/Janus MoSSe heterostructure are also explored. Our findings demonstrate that the NbS2/MoSSe heterostructure is not only structurally and thermally stable but also exfoliable, making it a promising candidate for experimental realization. In its ground state, this heterostructure exhibits p-type Schottky contacts characterized by small Schottky barriers and low tunneling barrier resistance, showing its considerable potential for utilization in electronic devices. Additionally, our findings reveal that the electronic properties, contact barriers and contact types of the NbS2/MoSSe heterostructure can be tuned by applying electric fields. A negative electric field leads to a conversion from a p-type Schottky contact to an n-type Schottky contact, whereas a positive electric field gives rise to a transformation from a Schottky into an ohmic contact. These insights offer valuable theoretical guidance for the practical utilization of the NbS2/MoSSe heterostructure in the development of next-generation electronic and optoelectronic devices.

Electrocatalytic study of the hydrogen evolution reaction on MoS2/BP and MoSSe/BP in acidic media

Molecular hydrogen (H2) production by the electrochemical hydrogen evolution reaction (HER) is being actively explored for non-precious metal-based electrocatalysts that are earth-abundant and low cost like MoS2. Although it is acid-stable, its applicability is limited by catalytically inactive basal planes, poor electrical transport and inefficient charge transfer at the interface. Therefore, the present work examines its bilayer van der Waals heterostructure (vdW HTS). The second constituent monolayer boron phosphide (BP) is advantageous as an electrode material owing to its chemical stability in both oxygen and water environments. Here, we have performed first-principles based calculations under the framework of density functional theory (DFT) for the HER in an electrochemical double layer model with the BP monolayer, MoS2/BP and MoSSe/BP vdW HTSs. The climbing image nudged elastic band method (CI-NEB) has been employed to determine the minimum energy pathways for Tafel and Heyrovsky reactions. The calculations reveal that the Tafel reaction shows no reaction barrier. Thereafter, for the Heyrovsky reaction, we obtained a low reaction barrier in the vdW HTSs as compared to that in the BP monolayer. Subsequently, we have observed no significant difference in the reaction profile of MoS2/BP and MoSSe/BP vdW HTSs in the case of 2 × 2 supercell configuration. However, in the case of 3 × 3 and 4 × 4 configurations, MoSSe/BP shows a feasible Heyrovsky reaction with no reaction barrier. The coverages with 1/4H+ concentration (conc.) deduced high coverage with low conc. and low coverage with high conc. to be apt for the HER via the Heyrovsky reaction path. Finally, on observing the activation barrier of the Heyrovsky pathway along with that of second H adsorption at the surface, the Heyrovsky path is expected to be favoured.

Unveiling the structural, dynamical, elastic, and electronic properties of cuboid silver tetrathiotungstate by means ofab initiocalculations

We present for the first time a theoretical study of the structural stability and physical properties of the newly synthesized Ag₂WS₄. The study contributes to a better understanding of its electronic and vibrational properties, which is fundamental for the optimization of the technological applications of Ag₂WS₄. Calculations have been carried out by means of density-functional theory. The obtained results support that Ag₂WS₄is thermodynamically, mechanically, and dynamically stable in a tetragonal layered structure, in good agreement with experiments. Calculations have also been used to obtain phonon frequencies, their assignments, and the Raman scattering spectrum. Furthermore, we show that Ag₂WS₄has a brittle structure, that is governed by van der Waals interactions, which favors its exfoliation as a low-dimensional structure. Additionally, the results show that Ag₂WS₄has a band gap of 2.02 eV with a favorable band-edge diagram for water splitting as well as for optoelectronic applications.

Electronic structure and interface contact of two-dimensional van der Waals boron phosphide/Ga2SSe heterostructures

In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga₂SSe using first-principles calculations. Owing to the out-of-plane symmetry being broken, the BP/Ga₂SSe vdWHs are divided into two different stacking patterns, which are BP/SGa₂Se and BP/SeGa₂S. Our results demonstrate that these stacking patterns are structurally and mechanically stable. The combination of single-layer BP and Janus Ga₂SSe gives rise to an enhancement in the Young’s modulus compared to the constituent monolayers. Furthermore, at the ground state, the BP/Ga₂SSe vdWHs possess a type-I (straddling) band alignment, which is desired for next-generation optoelectronic applications. The interlayer separation and electric field are effectively used to tune the electronic features of the BP/Ga₂SSe vdWH from the type-I to type-II band alignment, and from semiconductor to metal. Our findings show that the BP/Ga₂SSe vdWH would be appropriate for next-generation multifunctional optoelectronic and photovoltaic devices.

In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga₂SSe using first-principles calculations.

Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning

The electronic properties of layered two-dimensional (2D) transition-metal dichalcogenide (TMD) van der Waals (vdW) heterostructures are strongly dependent on their layer number (N). However, extremely large computational resources are required to investigate the layer-dependent TMD vdW heterostructures for every possible combination if N varies in a large range. Fortunately, the machine learning (ML) technique provides a feasible way to probe this problem. In this work, based on the density functional theory (DFT) calculations combined with the ML technique, we effectively predict the layer-dependent electronic properties of TMD vdW heterostructures composed of MoS₂, WS₂, MoSe₂, WSe₂, MoTe₂, or WTe₂, in which the layer number varies from 2-10. The cross-validation scores of our trained ML models in predicting the bandgaps as well as the band edge positions exceed 90%, suggesting excellent performance. The predicted results show that in the case of a few-layer system, the number of layers has a significant effect on the electronic properties. The bandgap and band alignment could be dramatically changed from bilayer to triple-layer heterostructures. However, with the increase of the number of layers, the electronic properties change, and some general trends can be summarized. When the layer number is larger than 8, the properties of the TMD heterostructures tend to be stable, and the influence of the layer number decreases. Based on these results, our work not only sheds light on the understanding of the layer-dependent electronic properties of multi-layer TMD vdW heterostructures, but also provides an efficient way to accelerate the discovery of functional materials.

Understanding the thermodynamic, dynamic, bonding, and electrocatalytic properties of low dimensional MgPSe3

The study of novel two-dimensional structures for potential applications in photocatalysis or in optoelectronics is a challenging task. In this work, first-principles calculations have been carried out to explore the...

Design of a noble-metal-free direct Z-scheme photocatalyst for overall water splitting based on a SnC/SnSSe van der Waals heterostructure

Semiconductor photocatalysts, using sunlight to stimulate various photocatalytic reactions, are promising materials for solving the energy crisis and environmental problems. However, the low photocatalytic efficiency and high cost pose major challenges for their widespread application. Mimicking the natural photosynthesis system, we propose a direct Z-scheme photocatalyst based on a Janus van der Waals heterostructure (vdWH) comprising SnC and Janus SeSnS monolayers. From first-principles calculations, the intrinsic built-in electric field of Janus SeSnS and the charge transfer from the SnC to the SeSnS layer give rise to a type-II band alignment. Such a band alignment benefits the formation of spatially separated reductive and oxidative active sites and the reduction of the global bandgap of the Janus vdWH. The proposed material increases the solar-to-hydrogen conversion efficiency to 60.8%. Besides, we also find that the light absorption coefficient is stacking configuration controllable and strain-tunable, e.g., the tensile strain promotes photocatalytic efficiency. Moreover, because Sn, S, and Se are environmentally benign and inexpensive elements, SnC/SeSnS vdWH is a promising noble-metal-free direct Z-scheme photocatalyst.