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Wang G, Xie W, Guo S, Chang J, Chen Y, Long X, Zhou L, Ang YS, Yuan H. Two-Dimensional GeC/MXY (M = Zr, Hf; X, Y = S, Se) Heterojunctions Used as Highly Efficient Overall Water-Splitting Photocatalysts. Molecules 2024; 29:2793. [PMID: 38930861 PMCID: PMC11206627 DOI: 10.3390/molecules29122793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 05/16/2024] [Accepted: 05/21/2024] [Indexed: 06/28/2024] Open
Abstract
Hydrogen generation by photocatalytic water-splitting holds great promise for addressing the serious global energy and environmental crises, and has recently received significant attention from researchers. In this work, a method of assembling GeC/MXY (M = Zr, Hf; X, Y = S, Se) heterojunctions (HJs) by combining GeC and MXY monolayers (MLs) to construct direct Z-scheme photocatalytic systems is proposed. Based on first-principles calculations, we found that all the GeC/MXY HJs are stable van der Waals (vdW) HJs with indirect bandgaps. These HJs possess small bandgaps and exhibit strong light-absorption ability across a wide range. Furthermore, the built-in electric field (BIEF) around the heterointerface can accelerate photoinduced carrier separation. More interestingly, the suitable band edges of GeC/MXY HJs ensure sufficient kinetic potential to spontaneously accomplish water redox reactions under light irradiation. Overall, the strong light-harvesting ability, wide light-absorption range, small bandgaps, large heterointerfacial BIEFs, suitable band alignments, and carrier migration paths render GeC/MXY HJs highly efficient photocatalysts for overall water decomposition.
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Affiliation(s)
- Guangzhao Wang
- School of Electronic Information Engineering, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing 408100, China; (W.X.); (X.L.)
| | - Wenjie Xie
- School of Electronic Information Engineering, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing 408100, China; (W.X.); (X.L.)
| | - Sandong Guo
- School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China;
| | - Junli Chang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China;
| | - Ying Chen
- School of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Xiaojiang Long
- School of Electronic Information Engineering, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing 408100, China; (W.X.); (X.L.)
| | - Liujiang Zhou
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;
| | - Yee Sin Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Hongkuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China;
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2
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Nguyen ST, Pham KD. Theoretical prediction of the electronic structure, optical properties and contact characteristics of a type-I MoS 2/MoGe 2N 4 heterostructure towards optoelectronic devices. Dalton Trans 2024; 53:9072-9080. [PMID: 38738357 DOI: 10.1039/d4dt00829d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Recently, the combination of two different two-dimensional (2D) semiconductors to generate van der Waals (vdW) heterostructures has emerged as an effective strategy to tailor their physical properties, paving the way for the development of next-generation devices with improved performance and functionality. In this work, we designed an MoS2/MoGe2N4 heterostructure and explored its electronic structures, optical properties and contact characteristics using first-principles calculations. The MoS2/MoGe2N4 heterostructure is predicted to be energetically, thermally and dynamically stable, indicating its feasibility for experimental synthesis in the future. The MoS2/MoGe2N4 heterostructure forms type-I band alignment, suggesting that it can be considered as a promising material for optoelectronic devices, such as light-emitting diodes, and in laser applications. Furthermore, the type-I MoS2/MoGe2N4 heterostructure has enhanced optical absorption in both the visible and ultraviolet regions. More interestingly, the electronic properties and contact characteristics of the MoS2/MoGe2N4 heterostructure can be tailored by applying in-plane biaxial strain. Under the application of compressive and tensile strains, transformations between type-I and type-II band alignments and between semiconductor and metal can be achieved in the MoS2/MoGe2N4 heterostructure. Our findings could provide useful guidance for experimental synthesis of materials based on the MoS2/MoGe2N4 heterostructure for electronic and optoelectronic applications.
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Affiliation(s)
- S T Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam.
| | - K D Pham
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
- School of Engineering & Technology, Duy Tan University, Da Nang 550000, Vietnam
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3
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Zhao Y, Tan Q, Li H, Li Z, Wang Y, Ma L. Tunable electronic and photoelectric properties of Janus group-III chalcogenide monolayers and based heterostructures. Sci Rep 2024; 14:10698. [PMID: 38730235 PMCID: PMC11087539 DOI: 10.1038/s41598-024-61373-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 05/06/2024] [Indexed: 05/12/2024] Open
Abstract
Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered. The results showed that the Janus Se-In-Ga-S and S-In-Ga-Se monolayers exhibit semiconducting characteristics with the band gaps of 1.295 eV and 1.752 eV, respectively. Furthermore, the different stacking configurations and surface termination at interface can realize the transition of band alignment between type I and type II due to the interlayer coupling. Moreover, we systematically investigated the photoelectric properties of Janus group-III chalcogenide heterostructures and predicated an optimized power conversion efficiency of 16.2%. These findings can aid in comprehending the customized characteristics of Janus group-III chalcogenide heterostructures, offering theoretical guidance for creating innovative photoelectric devices.
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Affiliation(s)
- Yipeng Zhao
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China
| | - Qiaolai Tan
- School of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, China.
| | - Honglai Li
- College of Physics Science and Technology, Hebei University, Baoding, 071002, People's Republic of China
| | - Zhiqiang Li
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China
| | - Yicheng Wang
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China
| | - Liang Ma
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China.
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4
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López-Galán OA, Boll T, Nogan J, Chassaing D, Welle A, Heilmaier M, Ramos M. One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods. Sci Rep 2024; 14:7104. [PMID: 38531954 DOI: 10.1038/s41598-024-57243-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 03/15/2024] [Indexed: 03/28/2024] Open
Abstract
We present the fabrication of a MoS2-xSex thin film from a co-sputtering process using MoS2 and MoSe2 commercial targets with 99.9% purity. The sputtering of the MoS2 and MoSe2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS2-xSex phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS2-xSex thin film, indicated by a blue shift in the A1g and E1g vibrational modes at 355 cm-1 and 255 cm-1, respectively. This work is complemented by computing the thermodynamic stability of a MoS2-xSex phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials' fabrication and target latent applications of such structures.
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Affiliation(s)
- Oscar A López-Galán
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
- Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany.
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro #450 N, Ciudad Juárez, 32310, CHIH, México.
| | - Torben Boll
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - John Nogan
- Sandia National Laboratories, Center for Integrated Nanotechnologies (CINT), 1101 Eubank Bldg. SE, Albuquerque, NM, 87110, USA
| | - Delphine Chassaing
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Alexander Welle
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Martin Heilmaier
- Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany
| | - Manuel Ramos
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro #450 N, Ciudad Juárez, 32310, CHIH, México.
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Nha PH, Nguyen CV, Hieu NN, Phuc HV, Nguyen CQ. Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS 2/Janus MoSSe van der Waals heterostructure. NANOSCALE ADVANCES 2024; 6:1193-1201. [PMID: 38356616 PMCID: PMC10863720 DOI: 10.1039/d3na00852e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 01/08/2024] [Indexed: 02/16/2024]
Abstract
The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices. In this study, we have theoretically designed a metal/semiconductor heterostructure composed of NbS2 and Janus MoSSe, and conducted a thorough investigation of its electronic properties and the formation of contact barriers through first-principles calculations. The effects of stacking configurations and the influence of external electric fields in enhancing the tunability of the NbS2/Janus MoSSe heterostructure are also explored. Our findings demonstrate that the NbS2/MoSSe heterostructure is not only structurally and thermally stable but also exfoliable, making it a promising candidate for experimental realization. In its ground state, this heterostructure exhibits p-type Schottky contacts characterized by small Schottky barriers and low tunneling barrier resistance, showing its considerable potential for utilization in electronic devices. Additionally, our findings reveal that the electronic properties, contact barriers and contact types of the NbS2/MoSSe heterostructure can be tuned by applying electric fields. A negative electric field leads to a conversion from a p-type Schottky contact to an n-type Schottky contact, whereas a positive electric field gives rise to a transformation from a Schottky into an ohmic contact. These insights offer valuable theoretical guidance for the practical utilization of the NbS2/MoSSe heterostructure in the development of next-generation electronic and optoelectronic devices.
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Affiliation(s)
- P H Nha
- Faculty of Electrical Engineering, Hanoi University of Industry Hanoi 100000 Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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6
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Singh A, Jain M, Bhumla P, Bhattacharya S. Electrocatalytic study of the hydrogen evolution reaction on MoS 2/BP and MoSSe/BP in acidic media. NANOSCALE ADVANCES 2023; 5:5332-5339. [PMID: 37767041 PMCID: PMC10521249 DOI: 10.1039/d3na00215b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 08/22/2023] [Indexed: 09/29/2023]
Abstract
Molecular hydrogen (H2) production by the electrochemical hydrogen evolution reaction (HER) is being actively explored for non-precious metal-based electrocatalysts that are earth-abundant and low cost like MoS2. Although it is acid-stable, its applicability is limited by catalytically inactive basal planes, poor electrical transport and inefficient charge transfer at the interface. Therefore, the present work examines its bilayer van der Waals heterostructure (vdW HTS). The second constituent monolayer boron phosphide (BP) is advantageous as an electrode material owing to its chemical stability in both oxygen and water environments. Here, we have performed first-principles based calculations under the framework of density functional theory (DFT) for the HER in an electrochemical double layer model with the BP monolayer, MoS2/BP and MoSSe/BP vdW HTSs. The climbing image nudged elastic band method (CI-NEB) has been employed to determine the minimum energy pathways for Tafel and Heyrovsky reactions. The calculations reveal that the Tafel reaction shows no reaction barrier. Thereafter, for the Heyrovsky reaction, we obtained a low reaction barrier in the vdW HTSs as compared to that in the BP monolayer. Subsequently, we have observed no significant difference in the reaction profile of MoS2/BP and MoSSe/BP vdW HTSs in the case of 2 × 2 supercell configuration. However, in the case of 3 × 3 and 4 × 4 configurations, MoSSe/BP shows a feasible Heyrovsky reaction with no reaction barrier. The coverages with 1/4H+ concentration (conc.) deduced high coverage with low conc. and low coverage with high conc. to be apt for the HER via the Heyrovsky reaction path. Finally, on observing the activation barrier of the Heyrovsky pathway along with that of second H adsorption at the surface, the Heyrovsky path is expected to be favoured.
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Affiliation(s)
- Arunima Singh
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Manjari Jain
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Preeti Bhumla
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Saswata Bhattacharya
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
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7
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Ould-Mohamed M, Ouahrani T, Muñoz A, Errandonea D. Unveiling the structural, dynamical, elastic, and electronic properties of cuboid silver tetrathiotungstate by means of ab initiocalculations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:385701. [PMID: 35817028 DOI: 10.1088/1361-648x/ac8036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Accepted: 07/11/2022] [Indexed: 06/15/2023]
Abstract
We present for the first time a theoretical study of the structural stability and physical properties of the newly synthesized Ag2WS4. The study contributes to a better understanding of its electronic and vibrational properties, which is fundamental for the optimization of the technological applications of Ag2WS4. Calculations have been carried out by means of density-functional theory. The obtained results support that Ag2WS4is thermodynamically, mechanically, and dynamically stable in a tetragonal layered structure, in good agreement with experiments. Calculations have also been used to obtain phonon frequencies, their assignments, and the Raman scattering spectrum. Furthermore, we show that Ag2WS4has a brittle structure, that is governed by van der Waals interactions, which favors its exfoliation as a low-dimensional structure. Additionally, the results show that Ag2WS4has a band gap of 2.02 eV with a favorable band-edge diagram for water splitting as well as for optoelectronic applications.
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Affiliation(s)
- Mounir Ould-Mohamed
- LPTHIRM, Département de physique, Faculté des sciences, Université Saâd DAHLAB-Blida 1, B.P. 270 Route de Soumâa, 09000 Blida, Algeria
| | - Tarik Ouahrani
- Laboratoire de Physique Théorique, Université de Tlemcen, Tlemcen 13000, Algeria
| | - Alfonso Muñoz
- Departamento de Física, MALTA-Consolider Team, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, San Cristóbal de La Laguna, E-38200 Tenerife, Spain
| | - Daniel Errandonea
- Departamento de Física Aplicada-Instituto de Ciencia de Materiales, Matter at High Pressure (MALTA) Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr Moliner 50, Burjassot, 46100 Valencia, Spain
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8
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Do HT, Vu TV, Lavrentyev AA, Cuong NQ, Cuong PV, Tong HD. Electronic structure and interface contact of two-dimensional van der Waals boron phosphide/Ga 2SSe heterostructures. RSC Adv 2022; 12:19115-19121. [PMID: 35865616 PMCID: PMC9244894 DOI: 10.1039/d2ra02748h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2022] [Accepted: 06/12/2022] [Indexed: 11/28/2022] Open
Abstract
In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga2SSe using first-principles calculations. Owing to the out-of-plane symmetry being broken, the BP/Ga2SSe vdWHs are divided into two different stacking patterns, which are BP/SGa2Se and BP/SeGa2S. Our results demonstrate that these stacking patterns are structurally and mechanically stable. The combination of single-layer BP and Janus Ga2SSe gives rise to an enhancement in the Young’s modulus compared to the constituent monolayers. Furthermore, at the ground state, the BP/Ga2SSe vdWHs possess a type-I (straddling) band alignment, which is desired for next-generation optoelectronic applications. The interlayer separation and electric field are effectively used to tune the electronic features of the BP/Ga2SSe vdWH from the type-I to type-II band alignment, and from semiconductor to metal. Our findings show that the BP/Ga2SSe vdWH would be appropriate for next-generation multifunctional optoelectronic and photovoltaic devices. In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga2SSe using first-principles calculations.![]()
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Affiliation(s)
- Hoang-Thinh Do
- Division of Computational Mechatronics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam .,Faculty of Electrical and Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Tuan V Vu
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - A A Lavrentyev
- Department of Electrical Engineering and Electronics, Don State Technical University 1 Gagarin Square 344010 Rostov-on-Don Russian Federation
| | - Nguyen Q Cuong
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam.,Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Pham V Cuong
- Faculty of Electrical Engineering Technology, Ha Noi University of Industry Ha Noi 100000 Vietnam
| | - Hien D Tong
- Faculty of Engineering, Vietnamese-German University Binh Duong Vietnam
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Wang T, Tan X, Wei Y, Jin H. Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning. NANOSCALE 2022; 14:2511-2520. [PMID: 35103742 DOI: 10.1039/d1nr07747c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The electronic properties of layered two-dimensional (2D) transition-metal dichalcogenide (TMD) van der Waals (vdW) heterostructures are strongly dependent on their layer number (N). However, extremely large computational resources are required to investigate the layer-dependent TMD vdW heterostructures for every possible combination if N varies in a large range. Fortunately, the machine learning (ML) technique provides a feasible way to probe this problem. In this work, based on the density functional theory (DFT) calculations combined with the ML technique, we effectively predict the layer-dependent electronic properties of TMD vdW heterostructures composed of MoS2, WS2, MoSe2, WSe2, MoTe2, or WTe2, in which the layer number varies from 2-10. The cross-validation scores of our trained ML models in predicting the bandgaps as well as the band edge positions exceed 90%, suggesting excellent performance. The predicted results show that in the case of a few-layer system, the number of layers has a significant effect on the electronic properties. The bandgap and band alignment could be dramatically changed from bilayer to triple-layer heterostructures. However, with the increase of the number of layers, the electronic properties change, and some general trends can be summarized. When the layer number is larger than 8, the properties of the TMD heterostructures tend to be stable, and the influence of the layer number decreases. Based on these results, our work not only sheds light on the understanding of the layer-dependent electronic properties of multi-layer TMD vdW heterostructures, but also provides an efficient way to accelerate the discovery of functional materials.
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Affiliation(s)
- Tao Wang
- Institute of Theoretical Physics, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, People's Republic of China
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
| | - Xiaoxing Tan
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
| | - Yadong Wei
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
- Institute of Theoretical Physics, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
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Ouahrani T, Daouli A, Badawi M, Bendaoud L, Morales-Garcia A, Errandonea D. Understanding the thermodynamic, dynamic, bonding, and electrocatalytic properties of low dimensional MgPSe3. Dalton Trans 2022; 51:9689-9698. [DOI: 10.1039/d2dt01194h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The study of novel two-dimensional structures for potential applications in photocatalysis or in optoelectronics is a challenging task. In this work, first-principles calculations have been carried out to explore the...
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11
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Jiang X, Gao Q, Xu X, Xu G, Li D, Cui B, Liu D, Qu F. Design of a noble-metal-free direct Z-scheme photocatalyst for overall water splitting based on a SnC/SnSSe van der Waals heterostructure. Phys Chem Chem Phys 2021; 23:21641-21651. [PMID: 34580681 DOI: 10.1039/d1cp03398k] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
Semiconductor photocatalysts, using sunlight to stimulate various photocatalytic reactions, are promising materials for solving the energy crisis and environmental problems. However, the low photocatalytic efficiency and high cost pose major challenges for their widespread application. Mimicking the natural photosynthesis system, we propose a direct Z-scheme photocatalyst based on a Janus van der Waals heterostructure (vdWH) comprising SnC and Janus SeSnS monolayers. From first-principles calculations, the intrinsic built-in electric field of Janus SeSnS and the charge transfer from the SnC to the SeSnS layer give rise to a type-II band alignment. Such a band alignment benefits the formation of spatially separated reductive and oxidative active sites and the reduction of the global bandgap of the Janus vdWH. The proposed material increases the solar-to-hydrogen conversion efficiency to 60.8%. Besides, we also find that the light absorption coefficient is stacking configuration controllable and strain-tunable, e.g., the tensile strain promotes photocatalytic efficiency. Moreover, because Sn, S, and Se are environmentally benign and inexpensive elements, SnC/SeSnS vdWH is a promising noble-metal-free direct Z-scheme photocatalyst.
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Affiliation(s)
- Xinxin Jiang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Quan Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xuhui Xu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ge Xu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Dongmei Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Bin Cui
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Desheng Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China. .,Department of Physics, Jining University, Qufu 273155, China
| | - Fanyao Qu
- Instituto de Física, Universidade de Brasília, Brasília-DF 70919-970, Brazil
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