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Peng K, Morgan NP, Wagner FM, Siday T, Xia CQ, Dede D, Boureau V, Piazza V, Fontcuberta I Morral A, Johnston MB. Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires. Nat Commun 2024; 15:103. [PMID: 38167839 PMCID: PMC10761983 DOI: 10.1038/s41467-023-44345-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Accepted: 12/09/2023] [Indexed: 01/05/2024] Open
Abstract
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2-1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.
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Affiliation(s)
- Kun Peng
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Nicholas Paul Morgan
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Ford M Wagner
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Thomas Siday
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Chelsea Qiushi Xia
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Didem Dede
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Victor Boureau
- Interdisciplinary Centre for Electron Microscopy, EPFL, 1015, Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland.
- Laboratory of Semiconductor Materials, Institute of Physics, EPFL, 1015, Lausanne, Switzerland.
| | - Michael B Johnston
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK.
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2
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Schmiedeke P, Panciera F, Harmand JC, Travers L, Koblmüller G. Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale. NANOSCALE ADVANCES 2023; 5:2994-3004. [PMID: 37260482 PMCID: PMC10228496 DOI: 10.1039/d3na00135k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Accepted: 05/02/2023] [Indexed: 06/02/2023]
Abstract
Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While much of this control has been enabled by direct, forward growth, the reverse reaction, i.e., crystal decomposition, provides very powerful means to further tailor properties towards the ultra-scaled dimensional level. Here, we use in situ transmission electron microscopy (TEM) to investigate the thermal decomposition kinetics of clean, ultrathin GaAs NWs and the role of distinctly different crystal polytypes in real-time and on the atomic scale. The whole process, from the NW growth to the decomposition, is conducted in situ without breaking vacuum to maintain pristine crystal surfaces. Radial decomposition occurs much faster for ZB- compared to WZ-phase NWs, due to the development of nano-faceted sidewall morphology and sublimation along the entire NW length. In contrast, WZ NWs form single-faceted, vertical sidewalls with decomposition proceeding only via step-flow mechanism from the NW tip. Concurrent axial decomposition is generally faster than the radial process, but is significantly faster (∼4-fold) in WZ phase, due to the absence of well-defined facets at the tip of WZ NWs. The results further show quantitatively the influence of the NW diameter on the sublimation and step-flow decomposition velocities elucidating several effects that can be exploited to fine-tune the NW dimensions.
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Affiliation(s)
- Paul Schmiedeke
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
| | - Federico Panciera
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Jean-Christophe Harmand
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Laurent Travers
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Gregor Koblmüller
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
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3
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Zhang X, Yi R, Zhao B, Li C, Li L, Li Z, Zhang F, Wang N, Zhang M, Fang L, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C, Gan X. Vertical Emitting Nanowire Vector Beam Lasers. ACS NANO 2023. [PMID: 37191338 DOI: 10.1021/acsnano.3c02786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Due to the peculiar structured light field with spatially variant polarizations on the same wavefront, vector beams (VBs) have sparked research enthusiasm in developing advanced super-resolution imaging and optical communications techniques. A compact VB nanolaser is intriguing for VB applications in miniaturized photonic integrated circuits. However, determined by the diffraction limit of light, it is a challenge to realize a VB nanolaser in the subwavelength scale because the VB lasing modes should have laterally structured distributions. Here, we demonstrate a VB nanolaser made from a 300 nm thick InGaAs/GaAs nanowire (NW). To select the high-order VB lasing mode, a standing NW as-grown from the selective-area-epitaxial (SAE) growth process is utilized, which has a bottom donut-shaped interface with the silicon oxide growth substrate. With this donut-shaped interface as one of the reflective mirrors of the nanolaser cavity, the VB lasing mode has the lowest threshold. Experimentally, a single-mode VB lasing mode with a donut-shaped amplitude and azimuthally cylindrical polarization distribution is obtained. Together with the high yield and uniformity of the SAE-grown NWs, our work provides a straightforward and scalable path toward cost-effective co-integration of VB nanolasers on potential photonic integrated circuits.
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Affiliation(s)
- Xutao Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
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Patel N, Fonseka HA, Zhang Y, Church S, Al-Abri R, Sanchez A, Liu H, Parkinson P. Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10958-10964. [PMID: 36779871 PMCID: PMC9982810 DOI: 10.1021/acsami.2c22591] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 01/28/2023] [Indexed: 06/18/2023]
Abstract
Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is applied to >15,000 nanoskived sections of highly strained GaAsP/GaAs radial core/shell quantum well heterostructures revealing high emission uniformity. While scanning electron microscopy shows a wide nanowire diameter spread of 540-60+60 nm, photoluminescence reveals a tightly bounded band-to-band transition energy of 1546-3+4 meV. A highly strained core/shell nanowire design is shown to reduce the dependence of emission on the quantum well width variation significantly more than in the unstrained case.
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Affiliation(s)
- Nikesh Patel
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
| | - Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, United Kingdom
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Stephen Church
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Ruqaiya Al-Abri
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Ana Sanchez
- Department
of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, United Kingdom
| | - Patrick Parkinson
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
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5
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Sow S, Dihissou S, Dramé A, Sene A, Orange F, Dieng SY, Guittard F, Darmanin T. Tunable Nanoporous Structures with Rose Petal Effect by Soft‐Template Electropolymerization of Benzotrithiophene Monomers. ChemistrySelect 2022. [DOI: 10.1002/slct.202200354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Salif Sow
- Université Cheikh Anta Diop Faculté des Sciences et Techniques Département de Chimie B.P. 5005 Dakar, Sénégal
| | | | - Abdoulaye Dramé
- Université Cheikh Anta Diop Faculté des Sciences et Techniques Département de Chimie B.P. 5005 Dakar, Sénégal
| | - Aboubacary Sene
- Université Cheikh Anta Diop Faculté des Sciences et Techniques Département de Chimie B.P. 5005 Dakar, Sénégal
| | - François Orange
- Université Côte d'Azur Centre Commun de Microscopie Appliquée (CCMA) 06200 Nice France
| | - Samba Yandé Dieng
- Université Cheikh Anta Diop Faculté des Sciences et Techniques Département de Chimie B.P. 5005 Dakar, Sénégal
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6
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Saraswathy Vilasam AG, Prasanna PK, Yuan X, Azimi Z, Kremer F, Jagadish C, Chakraborty S, Tan HH. Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3395-3403. [PMID: 34985872 DOI: 10.1021/acsami.1c19236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The epitaxial growth of III-V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor-liquid-solid growth using metal-organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated. A vertical yield of over 60% is achieved at an optimum growth temperature of 400 °C and a V/III ratio 18. The structural properties of the nanowires are investigated using various techniques including scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle annular dark-field imaging. The vertical nanowires grown at a low temperature and a high V/III ratio are found to have a zincblende phase with a [111] B polarity. The optical properties are investigated by photoluminescence (PL) and time-resolved PL measurements. First-principles electronic structure calculations within the framework of density functional theory elucidate the van der Waals nature of the nanowire/mica interface. Our results also show that these nanowires can be easily lifted off the bulk 2D mica template, providing a pathway for flexible nanowire devices.
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Affiliation(s)
- Aswani Gopakumar Saraswathy Vilasam
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ponnappa Kechanda Prasanna
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad) 211 019, India
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Zahra Azimi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Felipe Kremer
- Centre for Advanced Microscopy, The Australian National University Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sudip Chakraborty
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad) 211 019, India
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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