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Liu C, Liu T, Zhang Z, Sun Z, Zhang G, Wang E, Liu K. Understanding epitaxial growth of two-dimensional materials and their homostructures. NATURE NANOTECHNOLOGY 2024; 19:907-918. [PMID: 38987649 DOI: 10.1038/s41565-024-01704-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 05/22/2024] [Indexed: 07/12/2024]
Abstract
The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.
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Affiliation(s)
- Can Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Tianyao Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Quantum Technology Finland Centre of Excellence, Aalto University, Espoo, Finland
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Enge Wang
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
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Li N, Shi R, Li Y, Qi R, Liu F, Zhang X, Liu Z, Li Y, Guo X, Liu K, Jiang Y, Li XZ, Chen J, Liu L, Wang EG, Gao P. Phonon transition across an isotopic interface. Nat Commun 2023; 14:2382. [PMID: 37185918 PMCID: PMC10130007 DOI: 10.1038/s41467-023-38053-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2022] [Accepted: 04/13/2023] [Indexed: 05/17/2023] Open
Abstract
Isotopic mixtures result in distinct properties of materials such as thermal conductivity and nuclear process. However, the knowledge of isotopic interface remains largely unexplored mainly due to the challenges in atomic-scale isotopic identification. Here, using electron energy-loss spectroscopy in a scanning transmission electron microscope, we reveal momentum-transfer-dependent phonon behavior at the h-10BN/h-11BN isotope heterostructure with sub-unit-cell resolution. We find the phonons' energy changes gradually across the interface, featuring a wide transition regime. Phonons near the Brillouin zone center have a transition regime of ~3.34 nm, whereas phonons at the Brillouin zone boundary have a transition regime of ~1.66 nm. We propose that the isotope-induced charge effect at the interface accounts for the distinct delocalization behavior. Moreover, the variation of phonon energy between atom layers near the interface depends on both of momentum transfer and mass change. This study provides new insights into the isotopic effects in natural materials.
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Grants
- the National Natural Science Foundation of China (52125307, 11974023, 52021006,T2188101), and the “2011 Program” from the Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter.
- the National Natural Science Foundation of China (52025023), Guangdong Major Project of Basic and Applied Basic Research (2021B0301030002) to K.L.
- National Key R&D Program of China (2021YFA1400500), the National Natural Science Foundation of China (11974024, 92165101),the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No. XDB33000000
- National Key R&D Program of China (2021YFA1400500), the National Natural Science Foundation of China (U1932153, 11974001)
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Affiliation(s)
- Ning Li
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Ruochen Shi
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
| | - Yifei Li
- School of Materials Science and Engineering, Peking University, 100871, Beijing, China
| | - Ruishi Qi
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Fachen Liu
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Xiaowen Zhang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
| | - Zhetong Liu
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, China
| | - Yuehui Li
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China
| | - Xiangdong Guo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China
| | - Kaihui Liu
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
| | - Ying Jiang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
| | - Xin-Zheng Li
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, 100871, Beijing, China
| | - Ji Chen
- Institute of Condensed Matter and Material Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
| | - Lei Liu
- School of Materials Science and Engineering, Peking University, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
| | - En-Ge Wang
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
- Songshan Lake Materials Laboratory, 523808, Dongguan, China.
- School of Physics, Shanghai University, 200444, Shanghai, China.
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
- Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
- Hefei National Laboratory, 230088, Hefei, China.
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Yang Y, Peng Y, Saleem MF, Chen Z, Sun W. Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications. MATERIALS 2022; 15:ma15134396. [PMID: 35806522 PMCID: PMC9267908 DOI: 10.3390/ma15134396] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Revised: 06/09/2022] [Accepted: 06/11/2022] [Indexed: 01/11/2023]
Abstract
Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.
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Affiliation(s)
- Yufei Yang
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
| | - Yi Peng
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
| | - Muhammad Farooq Saleem
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Correspondence: (W.S.); (M.F.S.); (Z.C.)
| | - Ziqian Chen
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
- Correspondence: (W.S.); (M.F.S.); (Z.C.)
| | - Wenhong Sun
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and the Guangxi Key of Processing for Non-Ferrous Metals and Featured Materials, Nanning 530004, China
- Correspondence: (W.S.); (M.F.S.); (Z.C.)
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Li Y, Zhang X, Wang J, Ma X, Shi JA, Guo X, Zuo Y, Li R, Hong H, Li N, Xu K, Huang X, Tian H, Yang Y, Yao Z, Liao P, Li X, Guo J, Huang Y, Gao P, Wang L, Yang X, Dai Q, Wang E, Liu K, Zhou W, Yu X, Liang L, Jiang Y, Li XZ, Liu L. Engineering Interlayer Electron-Phonon Coupling in WS 2/BN Heterostructures. NANO LETTERS 2022; 22:2725-2733. [PMID: 35293751 DOI: 10.1021/acs.nanolett.1c04598] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
In van der Waals (vdW) heterostructures, the interlayer electron-phonon coupling (EPC) provides one unique channel to nonlocally engineer these elementary particles. However, limited by the stringent occurrence conditions, the efficient engineering of interlayer EPC remains elusive. Here we report a multitier engineering of interlayer EPC in WS2/boron nitride (BN) heterostructures, including isotope enrichments of BN substrates, temperature, and high-pressure tuning. The hyperfine isotope dependence of Raman intensities was unambiguously revealed. In combination with theoretical calculations, we anticipate that WS2/BN supercells could induce Brillouin-zone-folded phonons that contribute to the interlayer coupling, leading to a complex nature of broad Raman peaks. We further demonstrate the significance of a previously unexplored parameter, the interlayer spacing. By varying the temperature and high pressure, we effectively manipulated the strengths of EPC with on/off capabilities, indicating critical thresholds of the layer-layer spacing for activating and strengthening interlayer EPC. Our findings provide new opportunities to engineer vdW heterostructures with controlled interlayer coupling.
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Affiliation(s)
- Yifei Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Xiaowei Zhang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinhuan Wang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Xiaoli Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Jin-An Shi
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiangdong Guo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Yonggang Zuo
- The Key Laboratory of Unconventional Metallurgy, Ministry of Education, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China
| | - Ruijie Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Hao Hong
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ning Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Kai Xu
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xinyu Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Huifeng Tian
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Ying Yang
- Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Zhixin Yao
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - PeiChi Liao
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Xiao Li
- Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Junjie Guo
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Yuang Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
| | - Lifen Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Xiaoxia Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - EnGe Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
- School of Physics, Liaoning University, Shenyang 110036, People's Republic of China
| | - Kaihui Liu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
| | - Wu Zhou
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaohui Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ying Jiang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
| | - Xin-Zheng Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
| | - Lei Liu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
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