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For: Tao L, Yao B, Yue Q, Dan Z, Wen P, Yang M, Zheng Z, Luo D, Fan W, Wang X, Gao W. Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics. Nanoscale 2021;13:15403-15414. [PMID: 34499063 DOI: 10.1039/d1nr04281e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Number Cited by Other Article(s)
1
Guo D, Fu Q, Zhang G, Cui Y, Liu K, Zhang X, Yu Y, Zhao W, Zheng T, Long H, Zeng P, Han X, Zhou J, Xin K, Gu T, Wang W, Zhang Q, Hu Z, Zhang J, Chen Q, Wei Z, Zhao B, Lu J, Ni Z. Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024;36:e2400060. [PMID: 39126132 DOI: 10.1002/adma.202400060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 07/22/2024] [Indexed: 08/12/2024]
2
Luo X, Liu Y, Zheng T, Huang L, Zheng Z, Huang J, Lan Z, Zhao L, Ma J, Huo N, Yan Y, Berencén Y, Gao W, Li J. Two-Dimensional SnSe2(1-x)S2x/MoTe2 Antiambipolar Transistors with Composition Modulation for Multivalued Inverters. ACS APPLIED MATERIALS & INTERFACES 2024;16:42491-42501. [PMID: 39099453 DOI: 10.1021/acsami.4c08740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
3
Pan Y, Zheng T, Gao F, Qi L, Gao W, Zhang J, Li L, An K, Gu H, Chen H. High-Performance Photoinduced Tunneling Self-Driven Photodetector for Polarized Imaging and Polarization-Coded Optical Communication based on Broken-Gap ReSe2/SnSe2 van der Waals Heterojunction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024;20:e2311606. [PMID: 38497093 DOI: 10.1002/smll.202311606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 02/17/2024] [Indexed: 03/19/2024]
4
Chen J, Huang J, Zheng T, Yang M, Chen S, Ma J, Jian L, Pan Y, Zheng Z, Huo N, Gao W, Li J. 2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching. ACS APPLIED MATERIALS & INTERFACES 2024;16:38231-38242. [PMID: 39001805 DOI: 10.1021/acsami.4c06028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
5
Ip CI, Gao Q, Nguyen KD, Yan C, Yan G, Hoenig E, Marchese TS, Zhang M, Lee W, Rokni H, Meng YS, Liu C, Yang S. Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes. NANO LETTERS 2024;24:7557-7563. [PMID: 38758657 PMCID: PMC11212057 DOI: 10.1021/acs.nanolett.4c00008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 05/10/2024] [Accepted: 05/14/2024] [Indexed: 05/19/2024]
6
Li G, Bao H, Peng Y, Fu X, Liao W, Xiang C. Strain controllable band alignment and the interfacial and optical properties of tellurene/GaAs van der Waals heterostructures. Phys Chem Chem Phys 2024;26:16327-16336. [PMID: 38805024 DOI: 10.1039/d4cp00560k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
7
Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024;36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
8
Huang Z, Luo Z, Deng Z, Yang M, Gao W, Yao J, Zhao Y, Dong H, Zheng Z, Li J. Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices. SMALL METHODS 2023;7:e2201571. [PMID: 36932942 DOI: 10.1002/smtd.202201571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2022] [Revised: 02/20/2023] [Indexed: 06/09/2023]
9
Dan Z, Yang B, Song Q, Chen J, Li H, Gao W, Huang L, Zhang M, Yang M, Zheng Z, Huo N, Han L, Li J. Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance. ACS APPLIED MATERIALS & INTERFACES 2023;15:18101-18113. [PMID: 36989425 DOI: 10.1021/acsami.3c01807] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
10
Sun F, Hong W, He X, Jian C, Ju Q, Cai Q, Liu W. Synthesis of Ultrathin Topological Insulator β-Ag2 Te and Ag2 Te/WSe2 -Based High-Performance Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023;19:e2205353. [PMID: 36399635 DOI: 10.1002/smll.202205353] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 10/25/2022] [Indexed: 06/16/2023]
11
Li M, Wang Z, Han D, Shi X, Li T, Gao XP, Zhang Z. High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022]
12
Cao X, Lei Z, Zhao S, Tao L, Zheng Z, Feng X, Li J, Zhao Y. Te/SnS2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties. NANOSCALE ADVANCES 2022;4:4296-4303. [PMID: 36321139 PMCID: PMC9552753 DOI: 10.1039/d2na00507g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 08/28/2022] [Indexed: 06/16/2023]
13
Cao X, Lei Z, Huang B, Wei A, Tao L, Yang Y, Zheng Z, Feng X, Li J, Zhao Y. Non-Layered Te/In2 S3 Tunneling Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022;18:e2200445. [PMID: 35373465 DOI: 10.1002/smll.202200445] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 03/09/2022] [Indexed: 06/14/2023]
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