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Wang PJ, Yang ZS, Chang CJ, Lin SY, Sun CK. Optical quantification of the weak van der Waals coupling between multilayer antimonene and bilayer MoS2 using ultrafast coherent vibration spectroscopy. J Chem Phys 2024; 161:094704. [PMID: 39225529 DOI: 10.1063/5.0216616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Accepted: 08/12/2024] [Indexed: 09/04/2024] Open
Abstract
Antimonene, a promising conductor for next-generation 2D-based devices, has its contact resistance significantly influenced by the van der Waals (vdW) interaction within its heterostructure. In this study, we report the quantification of the vdW coupling between multilayer antimonene and bilayer MoS2 by ultrafast coherent vibration spectroscopy. By utilizing a femtosecond laser, we excited coherent acoustic vibrations in the multilayer-antimonene on substrate-supported bilayer MoS2, and the relative displacement at the vdW heterojunction was detected with the aid of bilayer MoS2. The photoexcited strain pulse generated in the multilayer-antimonene was observed as it transported to the bilayer MoS2, explaining the distortion at the beginning of the oscillation. By analyzing the thickness-dependent oscillation frequencies, we determine the effective vdW elastic constant between multilayer-antimonene and MoS2 to be (1.9 ± 0.2) × 1018 N/m3. This non-destructive optical technique offers a significant advance in the evaluation of vdW interactions at 2D metal-semiconductor interfaces.
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Affiliation(s)
- Peng-Jui Wang
- Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
| | - Zih-Sian Yang
- Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
| | - Che-Jia Chang
- Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan
- Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
| | - Shih-Yen Lin
- Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan
- Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
| | - Chi-Kuang Sun
- Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
- Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
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Lin HW, Mead G, Blake GA. Mapping LiNbO_{3} Phonon-Polariton Nonlinearities with 2D THz-THz-Raman Spectroscopy. PHYSICAL REVIEW LETTERS 2022; 129:207401. [PMID: 36461997 DOI: 10.1103/physrevlett.129.207401] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Accepted: 10/07/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional terahertz-terahertz-Raman spectroscopy can provide insight into the anharmonicities of low-energy phonon modes-knowledge of which can help develop strategies for coherent control of material properties. Measurements on LiNbO_{3} reveal THz and Raman nonlinear transitions between the E(TO_{1}) and E(TO_{3}) phonon polaritons. Distinct coherence pathways are observed with different THz polarizations. The observed pathways suggest that the origin of the third-order nonlinear responses is due to mechanical anharmonicities, as opposed to electronic anharmonicities. Further, we confirm that the E(TO_{1}) and E(TO_{3}) phonon polaritons are excited through resonant one-photon THz excitation.
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Affiliation(s)
- Haw-Wei Lin
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
| | - Griffin Mead
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
| | - Geoffrey A Blake
- Division of Chemistry and Chemical Engineering and Division of Geology and Planetary Sciences, California Institute of Technology, Pasadena, California 91125, USA
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Park TG, Oh ET, Kim S, Ou Y, Moodera J, Kim H, Rotermund F. Ultrafast formation of quantized interlayer vibrations in Bi 2Se 3 by photoinduced strain waves. OPTICS EXPRESS 2022; 30:35988-35998. [PMID: 36258537 DOI: 10.1364/oe.470310] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Accepted: 09/02/2022] [Indexed: 06/16/2023]
Abstract
This study comprehensively investigated the coherent lattice dynamics in Bi2Se3 by ultrafast optical pump-probe spectroscopy with tunable near-infrared probe pulses. Sample-thickness- and probe-wavelength-dependent experiments revealed the key role of Bi2Se3 optical property in the generation and detection of photoinduced strain waves, whose confinement initiated coherent interlayer vibrations. Furthermore, the frequency and lifetime of the interlayer vibrations could be quantitatively explained with a modified linear chain and an acoustic mismatch model considering elastic coupling at sample-substrate interfaces. The results of this work provide insights for analyzing and interpreting, through ultrafast optical spectroscopy, nanomechanical interactions in layered materials.
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Klokov AY, Frolov NY, Sharkov AI, Nikolaev SN, Chernopitssky MA, Chentsov SI, Pugachev MV, Duleba AI, Shupletsov AV, Krivobok VS, Kuntsevich AY. 3D Hypersound Microscopy of van der Waals Heterostructures. NANO LETTERS 2022; 22:2070-2076. [PMID: 35225628 DOI: 10.1021/acs.nanolett.2c00003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The mechanical properties of the layered crystals in the few layer limit are largely unexplored. We employ a picosecond ultrasonic technique to access the corresponding mechanical parameters. Temporal variation of the reflection coefficient of the Al film that covers hBN/WSe2/hBN (where hBN is hexagonal boron nitride) heterostructures on a sapphire substrate after the femtosecond laser pulse excitation is carefully measured using an interferometric technique with spatial resolution. The laser pulse generates a broadband sound wave packet propagating perpendicularly to the Al plane and partially reflecting from the heterostructural interfaces. The demonstrated technique allows one to resolve a WSe2 monolayer embedded in hBN. We apply a multilayered model of the optoacoustical response to evaluate the mechanical parameters, in particular, the rigidity of the interfaces. Mapping of the Fourier spectra of the response visualizes different composition regions and may serve as an acoustic tomography tool. Almost zero phonon dissipation below 150 GHz demonstrates the van der Waals heterostructures' potential for nanoacoustical applications.
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Affiliation(s)
- Andrey Yu Klokov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Nikolay Yu Frolov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Andrey I Sharkov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Sergey N Nikolaev
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Maxim A Chernopitssky
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Semen I Chentsov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Mikhail V Pugachev
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
- Moscow Institute of Physics and Technology, Institutskiy per. 9, Dolgoprudny, Moscow Region 141701, Russia
| | - Aliaksandr I Duleba
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Alexey V Shupletsov
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Vladimir S Krivobok
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
| | - Aleksandr Yu Kuntsevich
- P.N. Lebedev Physical Institute of the RAS, Leninsky Prospekt 53, Moscow 119991, Russia
- HSE University, 20 Myasnitskaya ulitsa, Moscow 101000, Russia
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