Electronic, mechanical, optical and photocatalytic properties of two-dimensional Janus XGaInY (X, Y ;= S, Se and Te) monolayers

Two-dimensional tetragonal AlOX (X = Cl, Br, or I) monolayers with promising photocatalytic performance: first-principles investigations

It is of great significance to search for new two-dimensional materials with excellent photocatalytic water splitting properties. Here, the AlOX (X = Cl, Br, or I) monolayers were constructed to explore their electronic and optical properties as a potential photocatalyst and mechanism of high photocatalytic activity by first principles calculations, for the first time. The results show that the AlOX (X = Cl, Br, or I) monolayers are all dynamically and thermodynamically stable. It is found that the AlOI monolayer exhibits visible optical absorption with a 538 nm absorption band edge, due to its direct band gap of 2.22 eV. Moreover, an appropriate band edge potential ensures its excellent reduction-oxidation (redox) ability. The asymmetry of crystals along different directions results in a noncoplanar HOMO and LUMO as well as an anisotropy effective mass and favors the separation of photogenerated carriers. These findings present the potential of the AlOX (X = Cl, Br, or I) monolayers as photocatalysts.

Tunable electronic and photoelectric properties of Janus group-III chalcogenide monolayers and based heterostructures

Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered. The results showed that the Janus Se-In-Ga-S and S-In-Ga-Se monolayers exhibit semiconducting characteristics with the band gaps of 1.295 eV and 1.752 eV, respectively. Furthermore, the different stacking configurations and surface termination at interface can realize the transition of band alignment between type I and type II due to the interlayer coupling. Moreover, we systematically investigated the photoelectric properties of Janus group-III chalcogenide heterostructures and predicated an optimized power conversion efficiency of 16.2%. These findings can aid in comprehending the customized characteristics of Janus group-III chalcogenide heterostructures, offering theoretical guidance for creating innovative photoelectric devices.

Janus monolayer PXC (X = As/Sb) for photocatalytic water splitting with a negative Poisson's ratio

Two-dimensional (2D) Janus materials have attracted considerable attention in photocatalysis owing to their robust redox capability and efficient segregation. In this study, we propose a novel Janus monolayer structure, denoted as PXC (X = As/Sb), exhibiting favorable stability in terms of dynamics, thermal properties, and mechanical characteristics. The PXC monolayers demonstrate a relatively smaller Young's modulus (132.5/119.5 N m-1 for PAsC/PSbC) and large negative Poisson's ratios (-0.15/-0.101 for PAsC/PSbC). Moreover, the HSE06 + SOC functional results show that PAsC/PSbC are indirect semiconductors with a 2.33/1.43 eV band gap, exhibiting a suitable band alignment for photocatalytic water splitting. The calculated high carrier mobility (104 cm2 V-1 s-1), along with a significant discrepancy, determined by the deformation potential theory and the built-up field induced by the large intrinsic dipole, effectively suppresses the recombination of photogenerated carriers. Furthermore, PXC monolayers possess a strong absorption capacity in the visible and ultraviolet light region (105 cm-1). Therefore, our results indicate that PXC monolayers hold great potential for application in the field of photocatalytic water splitting.

Metal-free Janus α- and β-SiCP4: designing stable and efficient two-dimensional semiconductors for water splitting

Two-dimensional (2D) semiconductors exhibit exceptional potential in the field of photocatalytic water splitting due to their unique structural characteristics and photoelectric properties. In this study, based on first-principles density functional theory, we theoretically proposed two SiCP4 Janus 2D semiconductors with high stability, namely monolayer α- and β-SiCP4. By performing the calculation of HSE06 functionals, the band structures of monolayer α- and β-SiCP4 have been estimated, and the results show that both α- and β-SiCP4 are direct-band-gap semiconductors with band gaps of 1.64 eV and 1.91 eV, respectively. Meanwhile, the band edge levels of monolayer α- and β-SiCP4 meet the band structure requirements of photocatalysts in water splitting. Notably, because of the internal build-in electric fields and tiny band gaps, monolayer α- and β-SiCP4 exhibit separated photogenerated electron-hole pairs and high solar-to-hydrogen (STH) efficiency, reaching up to 33.68% and 23.72%, respectively. Additionally, we also investigate the impact of uniaxial strain on electronic, optical and photocatalytic properties of monolayer α- and β-SiCP4 considering pH values ranging from 0 to 14. Our results demonstrate that the maximum STH efficiency for α-SiCP4 is achieved under X-direction strain (η) of 2%, Y-direction strain (η) of 8%, and pH values between 2 and 4. Conversely, β-SiCP4 exhibits the highest STH efficiency under X-direction strain (η) of 8%, Y-direction strain (η) of 6%, and pH values between 2 and 4.

A computational study of 2D group-III ternary chalcogenide monolayer compounds MNTe2(M, N = In, Ga, Al)

First principle calculations of novel two-dimensional (2D) group-III ternary chalcogenide monolayer (G3TCM) compounds have been carried out using density functional theory. The 2D hexagonal structure has a honeycomb-like appearance from both the top and bottom views. Both pristine and G3TCM compounds are energetically favourable and have been found to be dynamically stable via phonon calculations. Theab-initiomolecular dynamics calculations show the thermodynamical stability of the G3TCM compounds. The G3TCM compounds exhibit semiconductor behaviour with a decreased indirect bandgap compared to the pristine monolayers. Chalcogen atoms contribute mainly to the valence bands, while group-III atoms have a major contribution to the conduction band. A red shift has been observed in the absorption of light, mainly in the visible and ultraviolet regions, and the refractive index is increased compared to the pristine material. Both pristine and G3TCM compounds have been found to be more active in the ultraviolet region, and low reflection has been observed. In the 6-8 eV range of the ultraviolet region, zero reflection and the highest absorption are observed. The monolayer has shown potential applications in optoelectronics devices as an ultraviolet and visible light detector, absorber, coating material, and more. The band alignment of the 2D G3TCM monolayer is calculated to observe its photo-catalyst behaviour.

The impact of foreign direct investment on China's industrial carbon emissions based on the threshold model

In recent years, the number of countries concerned about environmental protection continues to increase. With a continuous expansion of economic scale, many emerging markets are also sustainably enhancing their management for industrial carbon emissions in foreign direct investment (FDI). Therefore, the impact of FDI on the host country's industrial carbon emissions has been a hot topic of researches. This study selects panel data of 30 medium and large cities in China from 2006 to 2019. Combined with dynamic panel GMM estimation and panel threshold model, this study empirically analyzes the impact factors of FDI on the host country's industrial carbon emissions. This study is based on the perspective of dual environmental management systems. This study draws the following conclusions: When taking the dual environmental management system factors as threshold variables into the empirical research process, only the FDI in Beijing, Tianjin, and Shanghai shows a certain inhibitory effect on Chinese industrial carbon emissions. The FDI in other cities increases the scale of industrial carbon emissions. At the same time, in the formal environmental management system, FDI has no significant impact on China's industrial carbon emissions. It indicates that the formal environmental management system of each city is not effective in policy formulation or implementation. In addition, the corresponding role of environmental management systems, such as innovation compensation and mandatory emission reduction, is not played. With the exception of Beijing and Shanghai, informal environmental management systems in other cities help curb the scale of industrial carbon emissions brought by FDI.

Janus zirconium halide ZrXY (X, Y = Br, Cl and F) monolayers with high lattice thermal conductivity and strong visible-light absorption

In this work, the structural, mechanical, and electronic properties of Janus zirconium halide monolayers have been systematically investigated using the first-principles calculations. After verifying the mechanical and dynamical stability of these monolayers, their electronic band structures have been predicted. These Janus monolayers have band gaps of 1.51-1.96 eV, which indicates their suitability for visible light absorption. The relaxation time and mobility of charge carriers are estimated using deformation potential theory, and the mobility of these monolayers has been predicted to be of the order ∼10² cm² V^-1 s^-1. The lattice thermal conductivity has been calculated by solving the phonon Boltzmann transport equation using ShengBTE software. At 300 K, the in-plane lattice thermal conductivity has values of 76.94, 54.18, and 95.87 W m^-1 K^-1 for ZrBrCl, ZrBrF, and ZrClF monolayers, respectively. The higher group velocity and small anharmonic three-phonon scattering rate are the main reasons for the high lattice thermal conductivity of the ZrClF monolayer. The real and imaginary parts of the dielectric function are calculated to find the absorption coefficients and these monolayers have a high absorption coefficient of the order ∼10⁶ cm^-1 in the visible light range. Our results show that Janus zirconium halide monolayers are potential candidates for optoelectronic and photocatalytic applications.

Carrier and phonon transport in 2D InSe and its Janus structures

Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.

Chalcogenides and Chalcogenide-Based Heterostructures as Photocatalysts for Water Splitting

Chalcogenides are essential in the conversion of solar energy into hydrogen fuel due to their narrow band gap energy. Hydrogen fuel could resolve future energy crises by substituting carbon fuels owing to zero-emission carbon-free gas and its eco-friendliness. The fabrication of different metal chalcogenide-based photocatalysts with enhanced photocatalytic water splitting have been summarized in this review. Different modifications of these chalcogenides, including coupling with another semiconductor, metal loading, and doping, are fabricated with different synthetic routes that can remarkably improve the photo-exciton separation and have been extensively investigated for photocatalytic hydrogen generation. In this direction, this review is undertaken to provide an overview of the enhanced photocatalytic performance of the binary and ternary chalcogenide heterostructures and their mechanisms for hydrogen production under irradiation of light.

DFT investigation of the electronic and optical properties of hexagonal MX2/ZrXO (M = W, Mo and X = S, Se) van der Waals heterostructures for photovoltaic solar cell application

The van der Waals heterostructure of Janus materials with a TMD monolayer was used to create a two-dimensional class of nanomaterials for photovoltaic solar cell applications. It is one of the potential methods for enhancing the performance of photovoltaic systems. Two monolayers of different 2D materials, Janus (ZrXO) and TMDs (MX₂), are stacked together to form the heterojunction. Based on density functional theory structural, electrical, and optical properties were investigated. The favorable stacking and stability of the MX₂/ZrXO (M = W, Mo and X = S, Se) van der Waals heterostructures are confirmed through binding energies, phonon dispersion and ab initio molecular dynamics calculations. Standard excitonic peaks, which correspond to the bound valence-band hole and conduction-band electron, as well as excitonic peaks involving the mid-gap charges, can be seen in the system's computed absorption spectrum. MX₂/ZrXO van der Waals heterostructures are excellent photovoltaic candidates with a maximum achived power conversion efficiency of above 22%. Furthermore, we discovered that the heterostructure materials have a high absorption efficiency which is good for the intended photovoltaic solar cell application.

First-principles insights onto structural, electronic and optical properties of Janus monolayers CrXO (X = S, Se, Te)

The lacking of the vertical mirror symmetry in Janus structures compared to their conventional metal monochalcogenides/dichalcogenides leads to their characteristic properties, which are predicted to play significant roles for various promising applications. In this framework, we systematically examine the structural, mechanical, electronic, and optical properties of the two-dimensional 2H Janus CrXO (X = S, Se, Te) monolayers by using first-principles calculation method based on density functional theory. The obtained results from optimization, phonon spectra, and elastic constants demonstrate that all three Janus monolayers present good structural and mechanical stabilities. The calculated elastic constants also indicate that the Janus CrTeO monolayer is much mechanically flexible than the other two monolayers due to its low Young's modulus value. The metallic behavior is observed at the ground state for the Janus CrSeO and CrTeO monolayers in both PBE and HSE06 levels. Meanwhile, the Janus CrSO monolayer exhibits a low indirect semiconducting characteristic. The bandgap of CrSO after the correction of HSE06 hybrid functional is the average value of its binary transition metal dichalcogenides. The broad absorption spectrum of CrSO reveals the wide activated range from the visible to near-ultraviolet region. Our findings not only present insight into the brand-new Janus CrXO monolayers but can also motivate experimental research for several applications in optoelectric and nanoelectromechanical devices.

Computational insights into structural, electronic, and optical properties of Janus GeSO monolayer

Although O is an element of chalcogen group, the study of two-dimensional (2D) O-based Janus dichalcogenides/monochalcogenides, especially their 1T-phase, has not been given sufficient attention. In this work, we systematically investigate the structural, electronic, and optical properties of 1T Janus GeSO monolayer by using the density functional theory. Via the analysis of phonon spectrum and evaluation of elastic constants, the GeSO monolayer is confirmed to be dynamically and mechanically stable. Calculated results for the elastic constants demonstrate that the Janus GeSO monolayer is much mechanically flexible than other 2D materials due to its small Young's modulus. At the ground state, while both GeS₂ and GeO₂ monolayers are indirect semiconductors, the Janus GeSO monolayer is found to be a direct band gap semiconductor. Further, effective masses of both electrons and holes are predicted to be directionally isotropic. The Janus GeSO monolayer has a broad absorption spectrum, which is activated from the visible light region and its absorption intensity is very high in the near-ultraviolet region. The calculated results not only systematically provide the fundamental physical properties of GeSO monolayer, but also stimulate scientists to further studying its importance both theoretically and experimentally.

The van der Waals CdO/PtS2 heterostructures for photocatalytic water splitting with excellent carrier separation and light absorption

The creation of hydrogen by photocatalytic water splitting is a core research area in the worldwide attempts to discover a valid substitute for fossil fuels.