Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets

A synergistic heterojunction of SnS2/SnSSe nanosheets on GaN for advanced self-powered photodetectors

Tin-based TMDCs are gaining traction in optoelectronics due to their eco-friendliness and easy synthesis, contrasting Mo/W-based counterparts. This study pioneers the solvothermal synthesis of highly crystalline SnSSe alloy, akin to Janus structures, bridging a notable research gap. By integrating SnS2/SnSSe materials onto a GaN platform, a synergistic heterojunction is created, enhancing light absorption and the electron-hole pair separation efficiency, demonstrating a self-powered photodetection. The GaN/SnS2/SnSSe heterojunction showcases a staircase-like (type-II) band alignment and exceptional performance metrics: high photoresponsivity of 314.96 A W-1, specific detectivity of 2.0 × 1014 jones, and external quantum efficiency of 10.7 × 104% under 365 nm illumination at 150 nW cm-2 intensity and 3 V bias. Notably, the device displays intensity-dependent photocurrent and photoswitching behaviors without external bias, highlighting its unique self-powered attributes. This study underscores SnS2's significance in optoelectronics and explores SnSSe integration into van der Waals heterostructures, promising advanced photodetection devices and bias-free optoelectronics.

Silver Decoration of Vertically Aligned MoS2-MoOx Nanosheets: A Comprehensive XPS Investigation

This study investigates the simultaneous decoration of vertically aligned molybdenum disulfide nanostructure (VA-MoS2) with Ag nanoparticles (NPs) and nitrogen functionalization. Nitrogen functionalization was achieved through physical vapor deposition (PVD) DC-magnetron sputtering using nitrogen as a reactive gas, aiming to induce p-type behavior in MoS2. The utilization of reactive sputtering resulted in the growth of three-dimensional silver structures on the surface of MoS2, promoting the formation of silver nanoparticles. A comprehensive characterization was conducted to assess surface modifications and analyze chemical and structural changes. X-ray photoelectron spectroscopy (XPS) showed the presence of silver on the MoS2 surface. Scanning electron microscopy (SEM) confirmed successful decoration with silver nanoparticles, showing that deposition time affects the size and distribution of the silver on the MoS2 surface.

High-Performance Sodium-Ion Batteries Enabled by 3D Nanoflowers Comprised of Ternary Sn-Based Dichalcogenides Embedded in Nitrogen and Sulfur Dual-Doped Carbon

To make sodium-ion batteries a realistic option for everyday energy storage, a practicable method is to enhance the kinetics of Na+ reactions through the development of structurally stable electrode materials. This study utilizes ternary Sn-based dichalcogenide (SnS1.5 Se0.5 ) in the design of electrode material to tackle several issues that adversely hinder the performance and longevity of sodium-ion batteries. First, the incorporation of Se into the SnS structure enhances its electrical conductivity and stability. Second, the ternary composition restricts the formation of intermediates during the desodiation/sodiation process, resulting in better electrode reaction reversibility. Finally, SnS1.5 Se0.5 lowers the diffusion barrier of Na, thereby facilitating rapid and efficient ion transport within the electrode material. Moreover, nitrogen and sulfur dual-doped carbon (NS-C) is used to enhance surface chemistry and ionic/electrical conductivity of SnS1.5 Se0.5 , leading to a pseudocapacitive storage effect that presents a promising potential for high-performance energy storage devices. The study has successfully developed a SnS1.5 Se0.5 /NS-C anode, exhibiting remarkable rate capability and cycle stability, retaining a capacity of 647 mAh g-1 even after 10 000 cycles at 5 A g-1 in half-cell tests. In full-cell tests, Na3 V2 (PO4 )3 //SnS1.5 Se0.5 /NS-C delivers a high energy density of 176.6 Wh kg-1 . In addition, the Na+ storage mechanism of SnS1.5 Se0.5 /NS-C is explored through ex situ tests and DFT calculations. The findings suggest that the ternary Sn-based dichalcogenides can considerably enhance the performance of the anode, enabling efficient large-scale storage of sodium. These findings hold great promise for the advancement of high-performance energy storage devices for practical applications.

Epitaxial Growth of SnS2 Ribbons on a Au-Sn Alloy Seed Film Surface

Two-dimensional metal chalcogenide film has attracted considerable interest for its use as an emerging device material for nanoelectronics. The film has been synthesized by various methods such as chemical vapor deposition, molecular beam epitaxy, and thermal vapor sulfurization. In this study, we took a new approach to synthesize tin disulfide (SnS₂) by using Au-Sn alloy film as a metal seed deposited on a sapphire substrate. Multilayer SnS₂ films were formed in a ribbon shape on (111)-oriented Au film and were aligned in the directions of threefold rotational symmetry. Furthermore, the SnS₂ was found to have an epitaxial relationship relative to the Au film and the sapphire substrate as follows: SnS₂[2̅110] || Au[101̅] || Al₂O₃[011̅0]. The segregation of grains consisting of a Sn-rich phase on the Au film surface and the subsequent sulfurization of these grains can be the key to the epitaxial SnS₂ ribbon formation.

Phase-controlled synthesis of SnS2and SnS flakes and photodetection properties

Two-dimensional (2D) layered tin sulfide compounds including SnS₂and SnS have attracted increasing attention due to their great potential application in the fields of optoelectronics and energy storage. However, device development has been delayed by the lack of capabilities to synthesize large-scale and high-quality 2D tin sulfide. Here, a phase-controlled synthesis of SnS₂and SnS flakes with lateral size over 100 μm was successfully realized via a facile chemical vapor deposition method. The lateral size of flakes and phase transformation of SnS₂to SnS can be tuned via changing the synthesis temperature. Compared to the formation of the SnS₂phase at relative low temperature (<750 °C), the SnS phase is favorable at higher temperature. The phototransistor based on the as-prepared SnS₂and SnS exhibits excellent photoresponse to 405 nm laser, including a high responsivity (1.7 × 10⁶mA W^-1), fast response rates (rise/decay time of 13/51 ms), an outstanding external quantum efficiency (5.3 × 10⁵%), and a remarkable detectivity (6.24 × 10¹²Jones) for SnS₂-based phototransistor, and these values are superior to the most reported SnS₂based photodetectors. Although the responsivity (3390 mA W^-1) and detectivity (1.1 × 10¹⁰Jones) of SnS-based device is lower than that of the SnS₂phototransistor, it has a faster rise/decay time of 3.10/1.59 ms. This work provides a means of tuning the size and phase of 2D layered tin sulfide, and promotes the application of SnS₂in high-performance optoelectronic devices.

Lithium selenometallates of triel elements, Li5MSe4 (M = Al and Ga), aliovalent doping and their ionic conductivity

Lithium selenometallates of Al and Ga have been synthesized. The Li-ion conductivity increases by almost five times upon Sn doping.