Defects in graphene-based heterostructures: topological and geometrical effects

The Case for a Defect Genome Initiative

The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire

A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green's function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (VS) and gate voltages (VG), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V7(Bz)8 and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V7(Bz)8. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V7(Bz)8 is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V7(Bz)8-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.

Through the Self-Optimization process to achieve high OER activity of SAC catalysts within the framework of TMO3@G and TMO4@G: A High-Throughput theoretical study

High-throughput DFT calculations are performed to explore the oxygen evolution reaction (OER) catalytic activity of a series of 2D graphene-based systems with TMO₃ or TMO₄ functional units. By screening the 3d/4d/5d transition metal (TM) atoms, a total of twelve TMO₃@G or TMO₄@G systems had extremely low overpotential of 0.33 ∼ 0.59 V, in which the V/Nb/Ta atom in VB group and Ru/Co/Rh/Ir atom in VIII group served as the active sites. The mechanism analysis reveals that the filling of outer electrons of TM atom can play an important role in determining the overpotential value by affecting the ΔG_O* value as an effective descriptor. Especially, in addition to the general situation of OER on the clean surface of the systems containing the Rh/Ir metal centers, the self-optimization process of TM-sites was carried out, and it made most of these single-atom catalysts (SAC) systems to have high OER catalytic activity. All these fascinating findings can contribute to an in-depth understanding of the OER catalytic activity and mechanism of the excellent graphene-based SAC systems. This work will facilitate the design and implementation of non-precious and highly efficient OER catalysts in the near future.

Topological defects and nanoholes in graphene oxide/hexagonal boron nitride heterostructures: stress buildup and accumulation

The built-in distorted stress field of graphene (Gr) and its derivatives in defective state will induce local geometrical buckling due to the geometry of monatomic layer. The random distribution and types of functional groups (FGOs) and defects will have a significant impact on the stress accumulation and geometrical deformation of two-dimensional (2D) materials. By using molecular dynamics (MD), structure design and nonlinear mechanics theory, a new model (combining both planar 2D heterostructures and graphene oxide (GO)) was established to study geometrical effects, stress accumulation, bonding energies and mechanical properties of 2D interface (key point) at stress distortion field and accumulated stress field. The results show that grain boundaries (GBs), nanoholes and FGOs have different effects on the mechanical properties and out-of-plane deformation of 2D materials. By using Von-mises stresses and statistical mechanics, the geometrical effects, built-in distortion stress transfer and attenuation appeared in the each domain of 2D materials during the order-disorder transition processes. Moreover, there are two opposite aspects of stress accumulation, transmission, attenuation and geometrical effects of grain boundary (GBs), FGOs and nanoholes with distance. The ratio of strain energy (bond length and angle) is very sensitive to each domain of 2D materials. Finally, the 2D planar configuration gradually changes to a negative Gaussian surface, and the softening and weakening effects induced by GBs, nanoholes and FGOs are gradually enhanced. It is hoped that the current results can be used as a guide to adjust the geometry and stress accumulation of 2D materials in the new growth point.

Landau levels and snake states of pseudo-spin-1 Dirac-like electrons in gapped Lieb lattices

This work reports the three-band structure associated with a Lieb lattice with arbitrary nearest and next-nearest neighbors hopping interactions. For specific configurations, the system admits a flat band located between two dispersion bands, where three inequivalent Dirac valleys are identified. Furthermore, quasi-particles are effectively described by a spin-1 Dirac-type equation. Under external homogeneous magnetic fields, the Landau levels are exactly determined as the third-order polynomial equation for the energy can be solved using Cardano's formula. It is also shown that an external anti-symmetric field promotes the existence of current-carrying states, so-called snake states, confined at the interface where the external field changes its sign.