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Gao Y, Wang X, Fan C. Advances in graphene-based 2D materials for tendon, nerve, bone/cartilage regeneration and biomedicine. iScience 2024; 27:110214. [PMID: 39040049 PMCID: PMC11261022 DOI: 10.1016/j.isci.2024.110214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024] Open
Abstract
Two-dimensional (2D) materials, especially graphene-based materials, have important implications for tissue regeneration and biomedicine due to their large surface area, transport properties, ease of functionalization, biocompatibility, and adsorption capacity. Despite remarkable progress in the field of tissue regeneration and biomedicine, there are still problems such as unclear long-term stability, lack of in vivo experimental data, and detection accuracy. This paper reviews recent applications of graphene-based materials in tissue regeneration and biomedicine and discusses current issues and prospects for the development of graphene-based materials with respect to promoting the regeneration of tendons, neuronal cells, bone, chondrocytes, blood vessels, and skin, as well as applications in sensing, detection, anti-microbial activity, and targeted drug delivery.
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Affiliation(s)
- Yuxin Gao
- Department of Orthopedics, Shanghai Sixth People’s Hospital Affiliated to Shanghai Jiao Tong University School of Medicine, Shanghai, China
- College of Fisheries and Life Science, Shanghai Ocean University, Shanghai, China
| | - Xu Wang
- Department of Orthopedics, Shanghai Sixth People’s Hospital Affiliated to Shanghai Jiao Tong University School of Medicine, Shanghai, China
- National Center for Orthopaedics, Shanghai, China
- Shanghai Engineering Research Center for Orthopaedic Material Innovation and Tissue Regeneration, Shanghai, China
| | - Cunyi Fan
- Department of Orthopedics, Shanghai Sixth People’s Hospital Affiliated to Shanghai Jiao Tong University School of Medicine, Shanghai, China
- National Center for Orthopaedics, Shanghai, China
- Shanghai Engineering Research Center for Orthopaedic Material Innovation and Tissue Regeneration, Shanghai, China
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Yang M, Huang H, Zhao W. Novel two-dimensional HfSi 2N 4 monolayer with excellent bandgap modulation and electronic properties modulation. J Mol Model 2024; 30:238. [PMID: 38954080 DOI: 10.1007/s00894-024-06042-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2024] [Accepted: 06/21/2024] [Indexed: 07/04/2024]
Abstract
The bandgap modulation and electronic properties modulation of two-dimensional HfSi2N4 monolayer induced by strain, electric field and atomic adsorption are studied by first principles. The HfSi2N4 monolayer was found to be dynamically, thermally, and mechanically stable at equilibrium, and it is a direct semiconductor with a bandgap of 1.87 eV. The bandgap of the HfSi2N4 monolayer can be precisely modulated by strain. Under the action of strain, HfSi2N4 monolayer not only transforms from direct semiconductor to indirect semiconductor, but also improves the absorption of visible light. An external electric field in the 0-0.5 eV/Å range can also modulate the bandgap of HfSi2N4 monolayer from 1.87 eV to 0 eV, and most importantly, at an external electric field of 0.5 eV/Å, HfSi2N4 monolayer shows the characteristics of spin gapless semiconductor. The calculated adsorption energy shows that the structures of H, O and F atoms adsorbed by HfSi2N4 monolayer can all exist stably. The bandgap of the configuration after adsorption of O and F atoms is significantly reduced compared with that of HfSi2N4 monolayer. Furthermore, the HfSi2N4 monolayer after adsorption of H and F atoms is transformed into a magnetic semiconductor. METHOD: All calculations were performed using Vienna ab initial simulation package, The electronic structure, mechanical properties, electronic properties and other properties were carried out using generalized gradient approximation (GGA-PBE), supplemented by HSE06 and GGA + U. The total-energy and force convergence are less than 10-6 eV and 0.001 eV/Å, respectively. The vacuum on the z-axis is selected 20 Å. The vdW interactions were corrected using the Grimme scheme (DFT-D3).
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Affiliation(s)
- Mingyang Yang
- School of Materials Science and Engineering, Hubei University of Automotive Technology, Shiyan, 442002, China
| | - Haiming Huang
- School of Materials Science and Engineering, Hubei University of Automotive Technology, Shiyan, 442002, China.
- Hubei Key Laboratory of Energy Storage and Power Battery, Hubei University of Automotive Technology, Shiyan, 442002, China.
| | - Wenyu Zhao
- School of Mathematics, Physics and Optoelectronic Engineering, Hubei University of Automotive Technology, Shiyan, 442002, China
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Go GT, Lee Y, Seo DG, Lee TW. Organic Neuroelectronics: From Neural Interfaces to Neuroprosthetics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201864. [PMID: 35925610 DOI: 10.1002/adma.202201864] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 07/17/2022] [Indexed: 06/15/2023]
Abstract
Requirements and recent advances in research on organic neuroelectronics are outlined herein. Neuroelectronics such as neural interfaces and neuroprosthetics provide a promising approach to diagnose and treat neurological diseases. However, the current neural interfaces are rigid and not biocompatible, so they induce an immune response and deterioration of neural signal transmission. Organic materials are promising candidates for neural interfaces, due to their mechanical softness, excellent electrochemical properties, and biocompatibility. Also, organic nervetronics, which mimics functional properties of the biological nerve system, is being developed to overcome the limitations of the complex and energy-consuming conventional neuroprosthetics that limit long-term implantation and daily-life usage. Examples of organic materials for neural interfaces and neural signal recordings are reviewed, recent advances of organic nervetronics that use organic artificial synapses are highlighted, and then further requirements for neuroprosthetics are discussed. Finally, the future challenges that must be overcome to achieve ideal organic neuroelectronics for next-generation neuroprosthetics are discussed.
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Affiliation(s)
- Gyeong-Tak Go
- Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Yeongjun Lee
- Department of Chemical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Dae-Gyo Seo
- Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Institute of Engineering Research, Research Institute of Advanced Materials, Soft Foundry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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Yang Y, Wei Y, Guo Z, Hou W, Liu Y, Tian H, Ren TL. From Materials to Devices: Graphene toward Practical Applications. SMALL METHODS 2022; 6:e2200671. [PMID: 36008156 DOI: 10.1002/smtd.202200671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Indexed: 06/15/2023]
Abstract
Graphene, as an emerging 2D material, has been playing an important role in flexible electronics since its discovery in 2004. The representative fabrication methods of graphene include mechanical exfoliation, liquid-phase exfoliation, chemical vapor deposition, redox reaction, etc. Based on its excellent mechanical, electrical, thermo-acoustical, optical, and other properties, graphene has made a great progress in the development of mechanical sensors, microphone, sound source, electrophysiological detection, solar cells, synaptic transistors, light-emitting devices, and so on. In different application fields, large-scale, low-cost, high-quality, and excellent performance are important factors that limit the industrialization development of graphene. Therefore, laser scribing technology, roll-to-roll technology is used to reduce the cost. High-quality graphene can be obtained through chemical vapor deposition processes. The performance can be improved through the design of structure of the devices, and the homogeneity and stability of devices can be achieved by mechanized machining means. In total, graphene devices show promising prospect for the practical fields of sports monitoring, health detection, voice recognition, energy, etc. There is a hot issue for industry to create and maintain the market competitiveness of graphene products through increasing its versatility and killer application fields.
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Affiliation(s)
- Yi Yang
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yuhong Wei
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhanfeng Guo
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Weiwei Hou
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yingjie Liu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - He Tian
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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Girão AF, Serrano MC, Completo A, Marques PAAP. Is Graphene Shortening the Path toward Spinal Cord Regeneration? ACS NANO 2022; 16:13430-13467. [PMID: 36000717 PMCID: PMC9776589 DOI: 10.1021/acsnano.2c04756] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Along with the development of the next generation of biomedical platforms, the inclusion of graphene-based materials (GBMs) into therapeutics for spinal cord injury (SCI) has potential to nourish topmost neuroprotective and neuroregenerative strategies for enhancing neural structural and physiological recovery. In the context of SCI, contemplated as one of the most convoluted challenges of modern medicine, this review first provides an overview of its characteristics and pathophysiological features. Then, the most relevant ongoing clinical trials targeting SCI, including pharmaceutical, robotics/neuromodulation, and scaffolding approaches, are introduced and discussed in sequence with the most important insights brought by GBMs into each particular topic. The current role of these nanomaterials on restoring the spinal cord microenvironment after injury is critically contextualized, while proposing future concepts and desirable outputs for graphene-based technologies aiming to reach clinical significance for SCI.
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Affiliation(s)
- André F. Girão
- Centre
for Mechanical Technology and Automation (TEMA), Department of Mechanical
Engineering, University of Aveiro (UA), Aveiro, 3810-193, Portugal
- Instituto
de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Calle Sor Juana Inés de la
Cruz 3, Madrid, 28049, Spain
- (A.F.G.)
| | - María Concepcion Serrano
- Instituto
de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Calle Sor Juana Inés de la
Cruz 3, Madrid, 28049, Spain
- (M.C.S.)
| | - António Completo
- Centre
for Mechanical Technology and Automation (TEMA), Department of Mechanical
Engineering, University of Aveiro (UA), Aveiro, 3810-193, Portugal
| | - Paula A. A. P. Marques
- Centre
for Mechanical Technology and Automation (TEMA), Department of Mechanical
Engineering, University of Aveiro (UA), Aveiro, 3810-193, Portugal
- (P.A.A.P.M.)
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