Electrostatically-blind quantitative piezoresponse force microscopy free of distributed-force artifacts

Ferroelectric Texture of Individual Barium Titanate Nanocrystals

Ferroelectric materials display exotic polarization textures at the nanoscale that could be used to improve the energetic efficiency of electronic components. The vast majority of studies were conducted in two dimensions on thin films that can be further nanostructured, but very few studies address the situation of individual isolated nanocrystals (NCs) synthesized in solution, while such structures could have other fields of applications. In this work, we experimentally and theoretically studied the polarization texture of ferroelectric barium titanate (BaTiO3, BTO) NCs attached to a conductive substrate and surrounded by air. We synthesized NCs of well-defined quasicubic shape and 160 nm average size that conserve the tetragonal structure of BTO at room temperature. We then investigated the inverse piezoelectric properties of such pristine individual NCs by vector piezoresponse force microscopy (PFM), taking particular care to suppress electrostatic artifacts. In all of the NCs studied, we could not detect any vertical PFM signal, and the maps of the lateral response all displayed larger displacement amplitude on the edges with deformations converging toward the center. Using field phase simulations dedicated to ferroelectric nanostructures, we were able to predict the equilibrium polarization texture. These simulations revealed that the NC core is composed of 180° up and down domains defining the polar axis that rotate by 90° in the two facets orthogonal to this axis, eventually lying within these planes forming a layer of about 10 nm thickness mainly composed of 180° domains along an edge. From this polarization distribution, we predicted the lateral PFM response, which was revealed to be in very good qualitative agreement with the experimental observations. This work positions PFM as a relevant tool to evaluate the potential of complex ferroelectric nanostructures to be used as sensors.

Defining ferroelectric characteristics with reversible piezoresponse: PUND switching spectroscopy PFM characterization

Detecting ferroelectricity at micro- and nanoscales is crucial for advanced nanomaterials and materials with complicated topography. Switching spectroscopy piezoresponse force microscopy (SSPFM), which involves measuring piezoelectric hysteresis loops via a scanning probe microscopy tip, is a widely accepted approach to characterize polarization reversal at the local scale and confirm ferroelectricity. However, the local hysteresis loops acquired through this method often exhibit unpredictable shapes, a phenomenon often attributed to the influence of parasitic factors such as electrostatic forces and current flow. Our research has uncovered that the deviation in hysteresis loop shapes can be caused by spontaneous backswitching occurring after polarization reversal. Moreover, we've determined that the extent of this effect can be exacerbated when employing inappropriate SSPFM waveform parameters, including duration, frequency, and AC voltage amplitude. Notably, the conventional 'pulse-mode' SSPFM method has been found to intensify spontaneous backswitching. In response to these challenges, we have redesigned SSPFM approach by introducing the positive up-negative down (PUND) method within the 'step-mode' SSPFM. This modification allows for effective probing of local piezoelectric hysteresis loops in ferroelectrics with reversible piezoresponse while removing undesirable electrostatic contribution. This advancement extends the applicability of the technique to a diverse range of ferroelectrics, including semiconductor ferroelectrics and relaxors, promising a more reliable and accurate characterization of their properties.

Electrostrictive and piezoelectrical properties of chitosan-poly(3-hydroxybutyrate) blend films

Herein, we report the high apparent piezoelectric coefficient for chitosan-poly(3-hydroxybutyrate) (CS-PHB) blend films. The structure of chitosan-poly(3-hydroxybutyrate) (CS-PHB) blend films, exploiting characteristics such as dielectric, polarization, apparent piezoelectric properties, and their dependencies on the composition, were investigated. Based on the results of XRD, SEM, FTIR, PFM, and dielectric spectroscopy measurements, the structure of CS-PHB blend films has been proposed, which consists of spheric-like inclusion formed by precipitating isotactic-PHB interface layer, which consists of syndiotactic-PHB hydrogen bonding with CS, and CS matrix. The synergistic effects of piezoelectricity and electrostriction help explain the high value of the apparent piezoelectric coefficient (d33) obtained in the blend film with 13 wt% of PHB (d33 ≈ 200 pC/N). The investigated CS-PHB blend films are a good candidate for tissue engineering applications.

Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP2S6 via Ferroelectric Oxide

Ferroelectric van der Waals CuInP2S6 possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk TC ∼ 42 °C) and the lack of precise domain control. Here we show that CuInP2S6 can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when it is interfaced with ferroelectric oxide PbZr0.2Ti0.8O3 films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP2S6 fully conform to those of the underlying PbZr0.2Ti0.8O3, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature in situ domain imaging points to a significantly enhanced TC of >200 °C for 13 nm CuInP2S6 on PbZr0.2Ti0.8O3. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and TC can be attributed to interface-mediated structure distortion in CuInP2S6. Our study provides an effective material strategy to engineer the polar properties of CuInP2S6 for flexible nanoelectronic, optoelectronic, and mechanical applications.