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Zhao Y, Lee S, Long T, Park HL, Lee TW. Natural biomaterials for sustainable flexible neuromorphic devices. Biomaterials 2025; 314:122861. [PMID: 39405825 DOI: 10.1016/j.biomaterials.2024.122861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Revised: 09/10/2024] [Accepted: 09/26/2024] [Indexed: 11/10/2024]
Abstract
Neuromorphic electronics use neural models in hardware to emulate brain-like behavior, and provide power-efficient, extremely compact, and massively-parallel processing, so they are ideal candidates for next-generation information-processing units. However, traditional rigid neuromorphic devices are limited by their unavoidable mechanical and geometrical mismatch with human tissues or organs. At the same time, the rapid development of these electronic devices has generated a large amount of electronic waste, thereby causing severe ecological problems. Natural biomaterials have mechanical properties compatible with biological tissues, and are environmentally benign, ultra-thin, and lightweight, so use of these materials can address these limitations and be used to create next-generation sustainable flexible neuromorphic electronics. Here, we explore the advantages of natural biomaterials in simulating synaptic behavior of sustainable neuromorphic devices. We present the flexibility, biocompatibility, and biodegradability of these neuromorphic devices, and consider the potential applicability of these properties in wearable and implantable bioelectronics. Finally, we consider the challenges of device fabrication and neuromorphic system integration by natural biomaterials, then suggest future research directions.
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Affiliation(s)
- Yanfei Zhao
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seungbeom Lee
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| | - Tingyu Long
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hea-Lim Park
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea; Institute of Engineering Research, Research Institute of Advanced Materials, Soft Foundry, SN Display Co. Ltd., Interdisciplinary Program in Bioengineering, Seoul National University, Seoul, 08826, Republic of Korea.
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Lin F, Cheng Y, Li Z, Wang C, Peng W, Cao Z, Gao K, Cui Y, Wang S, Lu Q, Zhu K, Dong D, Lyu Y, Sun B, Ren F. Data encryption/decryption and medical image reconstruction based on a sustainable biomemristor designed logic gate circuit. Mater Today Bio 2024; 29:101257. [PMID: 39381266 PMCID: PMC11459028 DOI: 10.1016/j.mtbio.2024.101257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2024] [Revised: 09/13/2024] [Accepted: 09/17/2024] [Indexed: 10/10/2024] Open
Abstract
Memristors are considered one of the most promising new-generation memory technologies due to their high integration density, fast read/write speeds, and ultra-low power consumption. Natural biomaterials have attracted interest in integrated circuits and electronics because of their environmental friendliness, sustainability, low cost, and excellent biocompatibility. In this study, a sustainable biomemristor with Ag/mugwort:PVDF/ITO structure was prepared using spin-coating and magnetron sputtering methods, which exhibited excellent durability, significant resistance switching (RS) behavior and unidirectional conduction properties when three metals were used as top electrode. By studying the conductivity mechanism of the device, a charge conduction model was established by the combination of F-N tunneling, redox, and complexation reaction. Finally, the novel logic gate circuits were constructed using the as-prepared memristor, and further memristor based encryption circuit using 3-8 decoder was innovatively designed, which can realize uniform rule encryption and decryption of medical information for data and medical images. Therefore, this work realizes the integration of memristor with traditional electronic technology and expands the applications of sustainable biomemristors in digital circuits, data encryption, and medical image security.
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Affiliation(s)
- Fulai Lin
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Yuchen Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhuoqun Li
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- Department of Hepatobiliary Surgery, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
| | - Chengjiang Wang
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Wei Peng
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Kaikai Gao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Yu Cui
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Shiyang Wang
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
| | - Qiang Lu
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
| | - Kun Zhu
- Department of Neurology, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
| | - Dinghui Dong
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- Department of Hepatobiliary Surgery, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
| | - Yi Lyu
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
- Department of Hepatobiliary Surgery, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
| | - Bai Sun
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Fenggang Ren
- National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
- Department of Hepatobiliary Surgery, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
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Yan J, Armstrong JPK, Scarpa F, Perriman AW. Hydrogel-Based Artificial Synapses for Sustainable Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403937. [PMID: 39087845 DOI: 10.1002/adma.202403937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Revised: 06/16/2024] [Indexed: 08/02/2024]
Abstract
Hydrogels find widespread applications in biomedicine because of their outstanding biocompatibility, biodegradability, and tunable material properties. Hydrogels can be chemically functionalized or reinforced to respond to physical or chemical stimulation, which opens up new possibilities in the emerging field of intelligent bioelectronics. Here, the state-of-the-art in functional hydrogel-based transistors and memristors is reviewed as potential artificial synapses. Within these systems, hydrogels can serve as semisolid dielectric electrolytes in transistors and as switching layers in memristors. These synaptic devices with volatile and non-volatile resistive switching show good adaptability to external stimuli for short-term and long-term synaptic memory effects, some of which are integrated into synaptic arrays as artificial neurons; although, there are discrepancies in switching performance and efficacy. By comparing different hydrogels and their respective properties, an outlook is provided on a new range of biocompatible, environment-friendly, and sustainable neuromorphic hardware. How potential energy-efficient information storage and processing can be achieved using artificial neural networks with brain-inspired architecture for neuromorphic computing is described. The development of hydrogel-based artificial synapses can significantly impact the fields of neuromorphic bionics, biometrics, and biosensing.
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Affiliation(s)
- Jiongyi Yan
- School of Cellular and Molecular Medicine, University of Bristol, Bristol, BS8 1TD, UK
| | - James P K Armstrong
- Department of Translational Health Sciences, Bristol Medical School, University of Bristol, Bristol, BS1 3NY, UK
| | - Fabrizio Scarpa
- Bristol Composites Institute, School of Civil, Aerospace and Design Engineering (CADE), University of Bristol, University Walk, Bristol, BS8 1TR, UK
| | - Adam W Perriman
- School of Cellular and Molecular Medicine, University of Bristol, Bristol, BS8 1TD, UK
- Research School of Chemistry, Australian National University, Canberra, Australian Capital Territory, 2601, Australia
- John Curtin School of Medical Research, Australian National University, Canberra, Australian Capital Territory, 2601, Australia
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Li M, Li M, An JS, An H, Kim DH, Lee YH, Park KK, Kim TW. Three-Dimensional Integrated Synaptic Devices Based on a Silver-Cluster Conduction Mechanism with High Thermostability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42380-42391. [PMID: 39090057 DOI: 10.1021/acsami.4c04957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
During the operation of synaptic devices based on traditional conductive filament (CF) models, the formation and dissolution of CFs are usually uncertain. Moreover, when the device is operated for a long time, the CFs may dissolve due to both the Joule heat generated by the device itself and the thermal coupling between the devices. These problems seriously reduce the reliability and stability of the synaptic device. Here, an artificial synapse device based on polyimide-molybdenum disulfide quantum dot (MoS2 QD) nanocomposites is presented. Research has shown that MoS2 QDs doped into the active layer can effectively induce the reduction of Ag ions into Ag atoms, leading to the formation of Ag clusters and thereby achieving control over the growth of the CFs. Therefore, the device is capable of stably realizing various basic synaptic functions. Moreover, the long-term potentiation/long-term depression (LTP/LTD) of this device shows good linearity. In addition, due to the change in the shape of the CFs, the highly integrated devices with a three-dimensional (3D) stacked structure can operate normally even in a high-temperature environment of 110 °C. Finally, the synaptic characteristics of the devices on learning and inference tests show that their recognition rates are approximately 90.75% (room temperature) and 90.63% (110 °C).
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Affiliation(s)
- Mingjun Li
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Ming Li
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jun Seop An
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Haoqun An
- Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Dae Hun Kim
- Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Yong Hun Lee
- Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea
| | - Kwan Kyu Park
- Department of Mechanical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Tae Whan Kim
- Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
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Cao Z, Sun B, Zhou G, Mao S, Zhu S, Zhang J, Ke C, Zhao Y, Shao J. Memristor-based neural networks: a bridge from device to artificial intelligence. NANOSCALE HORIZONS 2023; 8:716-745. [PMID: 36946082 DOI: 10.1039/d2nh00536k] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial neural network technology is expected to break through the limitation of von Neumann so as to realize the replication of the human brain by enabling strong parallel computing ability and efficient data processing and become an important way towards the next generation of artificial intelligence. A new type of nanodevice, namely memristor, which is based on the variability of its resistance value, not only has very important applications in nonvolatile information storage, but also presents obsessive progressiveness in highly integrated circuits, making it one of the most promising circuit components in the post-Moore era. In particular, memristors can effectively simulate neural synapses and build neural networks; thus, they can be applied for the preparation of various artificial intelligence systems. This study reviews the research progress of memristors in artificial neural networks in detail and highlights the structural advantages and frontier applications of neural networks based on memristors. Finally, some urgent problems and challenges in current research are summarized and corresponding solutions and future development trends are put forward.
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Affiliation(s)
- Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
- Shaanxi International Joint Research Center for Applied Technology of Controllable Neutron Source, School of Science, Xijing University, Xi'an 710123, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, China
| | - Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jie Zhang
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Chuan Ke
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jinyou Shao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
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