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Yu J, Jin W, Zhang G, Wu H, Xiao B, Yang L, Chang H. Tuning the magnetic properties of van der Waals Fe 3GaTe 2 crystals by Co doping. Phys Chem Chem Phys 2024; 26:18847-18853. [PMID: 38946485 DOI: 10.1039/d4cp01573h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Tuning the magnetic properties of two-dimensional van der Waals ferromagnets has special importance for their practical applications. Using first-principles calculations, we investigate the magnetic properties of Co-doped Fe3GaTe2 with different Co concentrations and different Co atomic sites. Calculation results show that Fe or Co atoms with relatively lower atomic concentrations preferentially occupy Fe1 sites with interlayer coupling, which is more energetically favorable. As the doping concentration of Co atoms increases, the total magnetic moment of the doped system decreases, while the average atomic magnetic moments of Fe1 and Fe2 increase and decrease, respectively, with Fe1 reaching ∼2.08μB. The spin polarization of the doped model 2Co-2 near the Fermi energy level is significantly reduced, while 4Co-3 exhibits an enhanced trend. At some doping level, a phase change from ferromagnetism to antiferromagnetism appears at high Co concentration. These results provide a theoretical basis for experimental studies and valuable information for the development of Fe3GaTe2-based spintronic devices.
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Affiliation(s)
- Jie Yu
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Wen Jin
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Gaojie Zhang
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Hao Wu
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Bichen Xiao
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Li Yang
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Haixin Chang
- State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
- Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, China
- Liuzhou Key Laboratory of New Energy Vehicle Power Lithium Battery, School of Electronic Engineering, Guangxi University of Science and Technology, LiuZhou 545006, China
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Wang M, Zhu K, Lei B, Deng Y, Hu T, Song D, Du H, Tian M, Xiang Z, Wu T, Chen X. Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe 3GaTe 2. NANO LETTERS 2024; 24:4141-4149. [PMID: 38536947 DOI: 10.1021/acs.nanolett.3c05148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.
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Affiliation(s)
- Mingjie Wang
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Kejia Zhu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Bin Lei
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yazhou Deng
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Tao Hu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Dongsheng Song
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Haifeng Du
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, People's Republic of China
| | - Mingliang Tian
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Ziji Xiang
- CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Tao Wu
- CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xianhui Chen
- CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
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Lee JE, Yan S, Oh S, Hwang J, Denlinger JD, Hwang C, Lei H, Mo SK, Park SY, Ryu H. Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe 3GaTe 2. NANO LETTERS 2023; 23:11526-11532. [PMID: 38079244 DOI: 10.1021/acs.nanolett.3c03203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Fe3GaTe2, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature (TC). In this study, we reveal the electronic structure of Fe3GaTe2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction (Jex) and magnetic anisotropy energy to the development of the high-TC ferromagnetic ordering in Fe3GaTe2. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-TC ferromagnetic ordering in Fe3GaTe2.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Shaohua Yan
- Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Sehoon Oh
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul 06978, Korea
| | - Jinwoong Hwang
- Department of Physics, Kangwon National University, Chuncheon 24341, Korea
| | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan 46241, Korea
- Quantum Matter Core Facility, Pusan National University, Busan 46241, Korea
| | - Hechang Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul 06978, Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
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