Topological quantum devices: a review

Kinetic energy driven two-sublattice double-exchange: a general mechanism of magnetic exchange in transition metal compounds

One of the most important phenomena in magnetism is the exchange interaction between magnetic centres. In this topical review, we focus on the exchange mechanism in transition-metal compounds and establish kinetic-energy-driven two-sublattice double-exchange as a general mechanism of exchange, in addition to well-known mechanisms like superexchange and double exchange. This mechanism, which was first proposed (Sarmaet al2000Phys. Rev. Lett.852549), in the context of Sr2FeMoO6, a double-perovskite compound, later found to describe a large number of 3d and 4d or 5d transition metal-based double perovskites. The magnetism in multi-sublattice magnetic systems like double-double and quadrupolar perovskites involving 3d and 4d or 5d transition-metal ions have also been found to be governed by this as a primary mechanism of exchange. For example, the numerical solution of a two-sublatice double exchange with additional superexchange couplings for the FeRe-based double double and quadrupolar perovskites are found to reproduce the experimentally observed magnetic ground state as well as the high transition temperature of above 500 K. The applicability of this general mechanism extends beyond the perovskite crystal structures, and oxides, as demonstrated for the pyrochlore oxide, Tl2Mn2O7and the square-net chalcogenides KMnX2(X = S, Se, Te). The counter-intuitive doping dependence and pressure effect of magnetic transition temperature in Tl2Mn2O7is explained, while KMnX2(X = S, Se, Te) compounds are established as half-metallic Chern metals guided by two sublattice double exchange. While the kinetic energy-driven two-site double-exchange mechanism was originally proposed to explain ferromagnetism, a filling-dependent transition can lead to a rare situation of the antiferromagnetic metallic ground state, as found in La-doped Sr2FeMoO6, and proposed for computer predicted double perovskites Sr(Ca)2FeRhO6. This opens up a vast canvas to explore.

Intrinsic anomalous, spin and valley Hall effects in 'ex-so-tic' van-der-Waals structures

We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) sandwiched between a semiconducting van-der-Waals material with strong spin-orbit coupling (e.g., WS 2 ) and a ferromagnetic insulating vdW material (e.g. Cr 2 Ge 2 Te 6 ). Due to the exchange proximity effect from one side and spin-orbit proximity effect from the other side of graphene, such a structure is referred to as graphene based 'ex-so-tic' structure. First, we derive an effective Hamiltonian describing the low-energy states of the structure. Then, using the Green's function formalism, we obtain analytical results for the Hall conductivities as a function of the Fermi energy and gate voltage. For specific values of these parameters, we find a quantized valley Hall conductivity.

Strain-Induced Topological Phase Transitions Covering the Z4 Indicator in Orthorhombic Li2AuBi

The Z 4 symmetry indicator is widely used to classify topological materials hosting inversion symmetry. We find orthorhombic Li2AuBi in space group Cmcm is a topological insulator with Z 4 = 1 under no strain via first-principles calculations. Due to small band gaps in the kz = 0 plane, the band inversions can be selectively induced by moderate external strains to realize phases covering all values of Z 4 = 1, 2, 3, and 0. Detailed Z 4 phase diagrams are plotted under various moderate strains. The (001) surface states and their associated Fermi surfaces and spin textures are calculated. The topological surface states have different connectivities and different spin textures for the four different Z 4 phases. The tunability of topological surface states via moderate strain suggests Li2AuBi as an attractive topological material for device applications.

Engineering functionalization and properties of graphene quantum dots (GQDs) with controllable synthesis for energy and display applications

Graphene quantum dots (GQDs), a new type of 0D nanomaterial, are composed of a graphene lattice with sp2 bonding carbon core and characterized by their abundant edges and wide surface area. This unique structure imparts excellent electrical properties and exceptional physicochemical adsorption capabilities to GQDs. Additionally, the reduction in dimensionality of graphene leads to an open band gap in GQDs, resulting in their unique optical properties. The functional groups and dopants in GQDs are key factors that allow the modulation of these characteristics. So, controlling the functionalization level of GQDs is crucial for understanding their characteristics and further application. This review provides an overview of the properties and structure of GQDs and summarizes recent developments in research that focus on their controllable synthesis, involving functional groups and doping. Additionally, we provide a comprehensive and focused explanation of how GQDs have been advantageously applied in recent years, particularly in the fields of energy storage devices and displays.