High stability and strong luminescence CsPbBr3-Cs4PbBr6 thin films for all-inorganic perovskite light-emitting diodes

Phosphonic Chloride Assisted Fabrication of Highly Emissive Mixed Halide Perovskite Films in Ambient Air for Blue Light-Emitting Diodes

Blue perovskite light-emitting diodes (LEDs) have emerged as promising candidates for full-color display and lighting applications. However, the fabrication of blue-emitting perovskite films typically requires an inert environment, leading to increased complexity and cost in the manufacturing process, which is undesirable for applications of perovskite LEDs. Herein, we report a strategy to fabricate bright blue-emitting perovskite films in ambient air by incorporating phosphonic chlorides in a perovskite precursor solution. We used two different phosphonic chlorides, diphenylphosphonic chloride (DPPC) and phenylphosphonic dichloride (PPDC), and comparatively studied their effects on the properties of perovskite films and the blue LEDs. It is found that PPDC possesses a stronger chlorination ability due to higher hydrolysis reactivity; meanwhile, it has a stronger interaction with the perovskite compared to DPPC, resulting in an improved film quality and enhanced blue emission with a photoluminescence quantum yield of 45%, which represents the record value for the air-processed blue perovskite films. Blue perovskite LEDs are fabricated, and the emission wavelengths are effectively tuned by controlling the concentration of phosphonic chlorides. Benefiting from the optimized perovskite films with reduced nonradiative recombination and promoted charge injection and transport, the PPDC-derived blue perovskite LEDs exhibit improved performance with an external quantum efficiency of 3.3% and 1.2% for the 490 and 480 nm emission wavelength, respectively.

APTES and CTAB Synergistic Induce a Heterozygous CsPbBr3/Cs4PbBr6 Perovskite Composite and its Application on the Sensitive Fluorescent Detection of Iodide ions

Recently, all-inorganic halide perovskite quantum dots (IPQD) as a new fluorescent material with excellent fluorescence properties have attracted wide attention. However, their instability in polar solvents is the main factor hindering their application in analysis. Herein, a heterozygous perovskite (CsPbBr3/Cs4PbBr6) was simultaneously prepared and stabilized by a silylanization strategy using (3-aminopropyl)-triethoxysilane (APTES) and cetyltrimethyl ammonium bromide (CTAB) assisted precipitation encapsulation method. The synthesized CsPbBr3/Cs4PbBr6 emitted an independent fluorescence at 520 nm. The obtained CsPbBr3/Cs4PbBr6 exhibited good stability in ethanol/water mixtures. It was used as a fluorescent probe for sensitively detecting iodide ions (I-) by fluorescence quenching mechanism in the concentration range of 1 ~ 70.0 µM with the detection limit (LOD) of 0.83 µM (relative standard deviation (RSD) = 1.33%, n = 20). The simplicity and high selectivity of the proposed fluorescent analysis method were the prominent features. This work could be extended to the other target ion detection by a perovskite fluorescent quenching.

High brightness and low operating voltage CsPbBr3 perovskite LEDs by single-source vapor deposition

In this work, we utilized CsPbBr3 powder as the precursor material for the single-source vapor deposition (SSVD) process to fabricate the CsPbBr3 emitting layer. Due to the high density of grain boundaries and defects in the thin films deposited in the initial stages, non-radiative recombination can occur, reducing the efficiency of perovskite light-emitting diodes (PeLED). To address this issue, we employed a thermal annealing process by subjecting the perovskite films to the appropriate annealing temperature, facilitating the coalescence and growth of different grains, improving lattice integrity, and thereby reducing the presence of defects and enhancing the photoluminescence performance of the films. Furthermore, in this study, we successfully fabricated simple-structured CsPbBr3 PeLED using thermally annealed CsPbBr3 films. Among these components, even without adding the electron and hole transport layers, the best-performing device achieved a maximum brightness of 14,079 cd/m2 at a driving voltage of only 2.92 V after annealing at 350 °C; the brightness is 16.8 times higher than that of CsPbBr3 PeLED without heat treatment, demonstrating outstanding light-emitting performance. The research results show that using SSVD to prepare CsPbBr3 PeLED has broad application potential, providing a simple process option for research on improving the performance of PeLED.