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Fakhri MA, Jabbar HD, AbdulRazzaq MJ, Salim ET, Azzahrani AS, Ibrahim RK, Ismail RA. Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition. Sci Rep 2023; 13:21007. [PMID: 38030706 PMCID: PMC10686998 DOI: 10.1038/s41598-023-47955-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 11/20/2023] [Indexed: 12/01/2023] Open
Abstract
In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of laser fluence. XRD studies revealed that the GaN films deposited on porous silicon were nanocrystalline, exhibiting a hexagonal wurtzite structure along the (100) plane. Spectroscopic property results revealed that the photoluminescence PL emission peaks of the gallium nitride over porous silicon (GaN/PSi) sample prepared at 795 mJ/mm2 were centered at 260 nm and 624 nm. According to topographical and morphological analyses, the deposited film consisted of spherical grains with an average diameter of 178.8 nm and a surface roughness of 50.61 nm. The surface of the prepared films exhibited a cauliflower-like morphology. The main figures of merit of the nanostructured GaN/P-Si photodetectors were studied in the spectral range of 350-850 nm. The responsivity, detectivity, and external quantum efficiency of the photodetector at 575 nm under - 3 V were 19.86 A/W, 8.9 × 1012 Jones, and 50.89%, respectively. Furthermore, the photodetector prepared at a laser fluence of 795 mJ/mm2 demonstrates a switching characteristic, where the rise time and fall time are measured to be 363 and 711 μs, respectively.
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Affiliation(s)
- Makram A Fakhri
- Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Haneen D Jabbar
- Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq
| | | | - Evan T Salim
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Ahmad S Azzahrani
- Electrical Engineering Department, Northern Border University, Arar, Kingdom of Saudi Arabia.
| | | | - Raid A Ismail
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
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Fakhri MA, Jabbar HD, AbdulRazzaq MJ, Salim ET, Azzahrani AS, Ibrahim RK, Ismail RA. Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique. Sci Rep 2023; 13:14746. [PMID: 37679411 PMCID: PMC10485076 DOI: 10.1038/s41598-023-41396-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 08/25/2023] [Indexed: 09/09/2023] Open
Abstract
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 °C. The structural and optical properties of GaN films as a function of substrate temperature are investigate. XRD studies reveal that the GaN films deposited on porous silicon are nanocrystalline with a hexagonal wurtzite structure along (002) plane. The photoluminescence emission peaks of the GaN/PSi prepared at 300 °C substrate temperature are located at 368 nm and 728 nm corresponding to energy gap of 3.36 eV and 1.7 eV, respectively. The GaN/PSi heterojunction photodetector prepared at 300 °C exhibits the maximum performance, with a responsivity of 29.03 AW-1, detectivity of 8.6 × 1012 Jones, and an external quantum efficiency of 97.2% at 370 nm. Similarly, at 575 nm, the responsivity is 19.86 AW-1, detectivity is 8.9 × 1012 Jones, and the external quantum efficiency is 50.89%. Furthermore, the photodetector prepared at a temperature of 300 °C demonstrates a switching characteristic where the rise time and fall time are measured to be 363 and 711 μs, respectively.
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Affiliation(s)
- Makram A Fakhri
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Haneen D Jabbar
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
| | | | - Evan T Salim
- Laser and Optoelectronic Engineering Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Ahmad S Azzahrani
- Electrical Engineering Department, Northern Border University, Arar, Kingdom of Saudi Arabia.
| | | | - Raid A Ismail
- Laser and Optoelectronic Engineering Department, University of Technology-Iraq, Baghdad, Iraq
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Salim ET, Khalef WK, Fakhri MA, Fadhil RB, Azzahrani AS, Ibrahim RK, Ismail RA. Silver decorated lithium niobat nanostructure by UV activation method for silver-lithium niobate/silicon heterojunction device. Sci Rep 2023; 13:11514. [PMID: 37460581 DOI: 10.1038/s41598-023-38363-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 07/06/2023] [Indexed: 07/20/2023] Open
Abstract
Lithium niobite (LiNbO3) nanostructure were successfully synthesized by chemical bath deposition method (CBD) and then decorated with silver nitrate (AgNO3) through UV activation method at different immersion durations (5, 15, 25, 35, and 45 s). The silver nanoparticles (AgNPs) effects on the optical and structural properties were studied and analyzed using various scientific devices and technique. X-ray diffraction (XRD) results showed that all the samples have a hexagonal structure with a maximum diffraction peak at the (012), and the existence of silver atoms could be recognized at 2θ = 38.2° which corresponds to the (111) diffraction plane. The optical absorption of nanocomposites depicted the presence of plasma peak related to silver (Ag) at 350 nm. The estimated energy gap from the optical absorption revealed a reduction in the Eg value from (3.97 eV) to (3.59 eV) with the presence of Ag atom. The Photolumincence (PL) peaks were observed at around 355 nm for pure LiNbO3/Si and 358, 360, 363, 371, 476 nm for different immersion durations respectively, in the visible region of the electromagnetic spectrum. The scanning electron microscopy (SEM) study illustrated that with increasing the immersion time, especially at 45 s, a change in the particle morphology was observed (LiNbO3 NRs structure). Atomic force microscopy (AFM) displayed that the surface roughness decreases from 80.71 nm for pure sample to 23.02 nm for the decorated sample as the immersion time is increased. FT-IR manifested a noticeable increase in the intensity of the peaks of samples decorated with AgNPs. Raman spectroscopy elucidated that the peaks shifted to higher intensity due to the plasmonic effect of Ag nanoparticles. Ag-LiNbO3/Si heterojunction nano-devices were fabricated successfully and enhanced the optoelectronic properties in comparison with the pure LiNbO3/Si heterojunction device.
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Affiliation(s)
- Evan T Salim
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Wafaa K Khalef
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
| | - Makram A Fakhri
- Laser and Optoelectronic Engineering Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Rawan B Fadhil
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
| | - Ahmad S Azzahrani
- Electrical Engineering Department, Northern Border University, Arar, KSA, Saudi Arabia.
| | | | - Raid A Ismail
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
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Irfan M, Khan Y, Rehman AU, Ullah N, Khonina SN, Kazanskiy NL, Butt MA. Plasmonic Perfect Absorber Utilizing Polyhexamethylene Biguanide Polymer for Carbon Dioxide Gas Sensing Application. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2629. [PMID: 37048923 PMCID: PMC10096377 DOI: 10.3390/ma16072629] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Revised: 03/17/2023] [Accepted: 03/23/2023] [Indexed: 06/19/2023]
Abstract
In this paper a perfect absorber with a photonic crystal cavity (PhC-cavity) is numerically investigated for carbon dioxide (CO2) gas sensing application. Metallic structures in the form of silver are introduced for harnessing plasmonic effects to achieve perfect absorption. The sensor comprises a PhC-cavity, silver (Ag) stripes, and a host functional material-Polyhexamethylene biguanide polymer-deposited on the surface of the sensor. The PhC-cavity is implemented within the middle of the cell, helping to penetrate the EM waves into the sublayers of the structure. Therefore, corresponding to the concentration of the CO2 gas, as it increases, the refractive index of the host material decreases, causing a blue shift in the resonant wavelength and vice versa of the device. The sensor is used for the detection of 0-524 parts per million (ppm) concentration of the CO2 gas, with a maximum sensitivity of 17.32 pm (pico meter)/ppm achieved for a concentration of 366 ppm with a figure of merit (FOM) of 2.9 RIU-1. The four-layer device presents a straightforward and compact design that can be adopted in various sensing applications by using suitable host functional materials.
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Affiliation(s)
- Muhammad Irfan
- Nanophotonics Research Group, Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Pakistan
| | - Yousuf Khan
- Nanophotonics Research Group, Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Pakistan
| | - Atiq Ur Rehman
- Nanophotonics Research Group, Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Pakistan
| | - Naqeeb Ullah
- Nanophotonics Research Group, Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta 87300, Pakistan
| | - Svetlana N. Khonina
- Samara National Research University, 443086 Samara, Russia
- IPSI RAS-Branch of the FSRC “Crystallography and Photonics” RAS, 443001 Samara, Russia
| | - Nikolay L. Kazanskiy
- Samara National Research University, 443086 Samara, Russia
- IPSI RAS-Branch of the FSRC “Crystallography and Photonics” RAS, 443001 Samara, Russia
| | - Muhammad A. Butt
- Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
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