Molecular beam investigation of hydrogen dissociation on Si(001) and Si(111) surfaces

A molecular beam-surface apparatus for quantum state-resolved adsorption studies

Understanding the microscopic mechanism of molecule-surface interaction is of great importance in the study of chemical dynamics. Yet, it remains challenging to experimentally acquire quantum state resolved results, particularly the results related to different degrees of freedom of the reactants. Here, we report the design and performance of a new apparatus for molecule-surface dynamics studies, which enable the measurement of quantum state-resolved adsorption. A continuous narrow-linewidth infrared laser source and molecular beam unit were developed and employed in this new apparatus to achieve independent control on different degrees of freedom (translation, vibration, and rotation) of the molecule. Preliminary results on hydrogen and hydrogen chloride adsorption on the Cu (111) surface were also presented.

Dynamics of proton transfer reactions on silicon surfaces: OH-dissociation of methanol and water on Si(001)

The reaction dynamics of methanol and water on Si(001) were investigated by means of molecular beam techniques. The initial sticking probability s₀ was determined as a function of the kinetic energy of the incoming molecules, E_kin, and surface temperature, T_s. For both, methanol and water, a nonactivated reactional channel was observed; the dynamics were found to be determined by the reaction into the datively bonded intermediate state. A low conversion barrier was deduced for the conversion from this intermediate into the final state. It is attributed to the reaction mechanism, which proceeds via proton transfer from the OH-group of the datively bonded molecules to a Si surface atom. Despite this low conversion barrier, adsorption into the intermediate and further reaction via proton transfer were found to be largely decoupled.

Structure and energetics changes during hydrogenation of 4H-SiC{0001} surfaces: a DFT study

The changes in the atomic and electronic structure of Si- and C-terminated hexagonal SiC{0001} surfaces resulting from on-surface and subsurface hydrogen adsorption have been studied within the density functional theory framework. Hydrogen coverages ranging from a submonolayer to one monolayer were considered. Our results show that a monolayer of adsorbed H almost completely suppresses the relaxation of the SiC surface atomic layers. On both terminations H binds strongly to the surface and the binding is about 2 eV stronger in on-surface sites than subsurface. Hydrogen binding to the C-terminated surface varies very little with coverage and is distinctly stronger than to the Si-terminated surface.