High purity chemical etching and thermal passivation process for Ge(001) as nanostructure template

Dewetting behavior of Ge layers on SiO2 under annealing

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of layer thickness dGe (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580-700 °C, depending on dGe, through the appearance of surface undulation leading to the particle formation and the rupture of Ge layers by narrow channels or rounded holes in the layers with the thicknesses of 10-60 and 86 nm, respectively. The channel widths are significantly narrower than the distance between the particles that causes the formation of thinned Ge layer areas between particles at the middle dewetting stage. The thinned areas are then agglomerated into particles of smaller sizes, leading to the bimodal distributions of the Ge particles which are different in shape and size. The existence of a maximum in the particle pair correlation functions, along with the quadratic dependence of the corresponding particle spacing on dGe, may indicate the spinodal mechanism of the dewetting in the case of relatively thin Ge layers. Despite the fact that the particle shape, during the solid-state dewetting, is not thermodynamically equilibrium, the use of the Young's equation and contact angles allows us to estimate the particle/substrate interface energy.

Anisotropic 2D metallicity: plasmons in Ge(1 0 0)-Au

The low-energy plasmonic excitations of the Ge(0 0 1)-Au close to one monolayer coverage of Au were investigated by momentum-resolved high resolution electron energy loss spectroscopy. A very weak plasmonic loss was identified dispersing along the chain direction of the [Formula: see text] formed at these Au coverages. The measured dispersion was compared with the Tomonaga-Luttinger-liquid (TLL) model and with a model for an anisotropic Fermi liquid. Using the TLL model both for single and arrays of wires, no consistent picture turned up that could describe all available data. On the contrary, a quasi-one-dimensional model of a confined 2D electron gas gave a satisfactorily consistent description of the data. From these results for the collective low-energy excitations we conclude that the Ge(0 0 1)-Au system is reasonably well described by a strongly anisotropic 2D Fermi liquid, but is incompatible with a TLL.

Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning

We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O2). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the shape of inverted pyramids. The mechanism of this anisotropic etching is proposed to be the enhanced formation of soluble oxide (GeO2) around metals by the catalytic activity of metallic particles, reducing dissolved O2 in water to H2O molecules. Secondly, we apply this metal-assisted chemical etching to the nanoscale patterning of Ge in water using a cantilever probe in an atomic force microscopy setup. We investigate the dependences of probe material, dissolved oxygen concentration, and pressing force in water on the etched depth of Ge(100) surfaces. We find that the enhanced etching of Ge surfaces occurs only when both a metal-coated probe and saturated-dissolved-oxygen water are used. In this study, we present the possibility of a novel lithography method for Ge in which neither chemical solutions nor resist resins are needed.

Au-induced quantum chains on Ge(001)-symmetries, long-range order and the conduction path

Atomic nanowires on the Au/Ge(001) surface are investigated for their structural and electronic properties using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES). STM reveals two distinct symmetries: a c(8 × 2) describing the basic repeating distances, while the fine structure on top of the wires causes an additional superstructure of p(4 × 1). Both symmetries are long-range ordered as judged from low-energy electron diffraction. The Fermi surface is composed of almost perfectly straight sheets. Thus, the electronic states are one-dimensionally confined. Spatial dI/dV maps, where both topography and density of states (DOS) are probed simultaneously, reveal that the DOS at low energies, i.e. the conduction path, is oriented along the chain direction. This is fully consistent with the recently reported Tomonaga-Luttinger liquid phase of Au/Ge(001), with the density of states being suppressed by a power-law towards the Fermi energy.

Symmetry-breaking phase transition without a Peierls instability in conducting monoatomic chains

The one-dimensional (1D) model system Au/Ge(001), consisting of linear chains of single atoms on a surface, is scrutinized for lattice instabilities predicted in the Peierls paradigm. By scanning tunneling microscopy and electron diffraction we reveal a second-order phase transition at 585 K. It leads to charge ordering with transversal and vertical displacements and complex interchain correlations. However, the structural phase transition is not accompanied by the electronic signatures of a charge density wave, thus precluding a Peierls instability as origin. Instead, this symmetry-breaking transition exhibits three-dimensional critical behavior. This reflects a dichotomy between the decoupled 1D electron system and the structural elements that interact via the substrate. Such substrate-mediated coupling between the wires thus appears to have been underestimated also in related chain systems.