Phase transformation of wurtzite‐type boron nitride at high pressures and temperatures

Bias-Enhanced Formation of Metastable and Multiphase Boron Nitride Coating in Microwave Plasma Chemical Vapor Deposition

Boron nitride (BN) is primarily a synthetically produced advanced ceramic material. It is isoelectronic to carbon and, like carbon, can exist as several polymorphic modifications. Microwave plasma chemical vapor deposition (MPCVD) of metastable wurtzite boron nitride is reported for the first time and found to be facilitated by the application of direct current (DC) bias to the substrate. The applied negative DC bias was found to yield a higher content of sp³ bonded BN in both cubic and metastable wurtzite structural forms. This is confirmed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). Nano-indentation measurements reveal an average coating hardness of 25 GPa with some measurements as high as 31 GPa, consistent with a substantial fraction of sp³ bonding mixed with the hexagonal sp² bonded BN phase.

Hardness of Polycrystalline Wurtzite Boron Nitride (wBN) Compacts

Wurtzite boron nitride (wBN), due to its superior properties and many potential practical and scientific applications, such as ideal machining/cutting/milling ferrous and carbide materials, especially as an ideal dielectric substrate material for optical, electronic, and 2-D graphene-based devices, has recently attracted much attention from both academic and industrial fields. Despite decades of research, there is an ongoing debate about if the single-phase wBN is harder than diamond because of the difficulty to make pure wBN material. Here we report the successful synthesis of pure single-phase polycrystalline wurtzite-type boron nitride (wBN) bulk material by using wBN powder as a starting material with a well-controlled process under ultra-high pressure and high temperature. The cubic boron nitride (cBN) was also successfully prepared for the first time from wBN starting material for comparison and verification. The X-ray diffraction (XRD) and TEM clearly confirmed that a pure single-phase wBN compact was produced. The microstructure and mechanical properties including Vickers hardness, fracture toughness, and thermal stability for the pure single-phase wBN was first evaluated.

Stabilizing the metastable superhard material wurtzite boron nitride by three-dimensional networks of planar defects

Wurtzite boron nitride (w-BN) is a metastable superhard material that is a high-pressure polymorph of BN. Clarifying how the metastable high-pressure material can be stabilized at atmospheric pressure is a challenging issue of fundamental scientific importance and promising technological value. Here, we fabricate millimeter-size w-BN bulk crystals via the hexagonal-to-wurtzite phase transformation at high pressure and high temperature. By combining transmission electron microscopy and ab initio molecular dynamics simulations, we reveal a stabilization mechanism for w-BN, i.e., the metastable high-pressure phase can be stabilized by 3D networks of planar defects which are constructed by a high density of intersecting (0001) stacking faults and {10[Formula: see text]0} inversion domain boundaries. The 3D networks of planar defects segment the w-BN bulk crystal into numerous nanometer-size prismatic domains with the reverse crystallographic polarities. Our findings unambiguously demonstrate the retarding effect of crystal defects on the phase transformations of metastable materials, which is in contrast to the common knowledge that the crystal defects in materials will facilitate the occurrence of phase transformations.

Twinning model for a new pseudo-hexagonal BN

A model for a twin consisting of two domains is proposed for a new pseudo-hexagonal modification of high-density boron nitride. A structure refinement based on high resolution diffraction data taken with 0.5 Å synchrotron radiation resulted in R factors below 0.015 for each domain. The refinement against detwinned and composite data converged to R = 0.053, with domain ratio 0.462(2):0.538.