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Negishi Y. Metal-nanocluster Science and Technology: My Personal History and Outlook. Phys Chem Chem Phys 2022; 24:7569-7594. [DOI: 10.1039/d1cp05689a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Metal nanoclusters (NCs) are among the leading targets in research of nanoscale materials, and elucidation of their properties (science) and development of control techniques (technology) have been continuously studied for...
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Wu D, Du Q, Wu X, Shi R, Sai L, Liang X, Huang X, Zhao J. Evolution of atomic structures of SnN, SnN−, and SnNCl− clusters (N = 4–20): Insight from ab initio calculations. J Chem Phys 2019; 150:174304. [DOI: 10.1063/1.5095437] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022] Open
Affiliation(s)
- Di Wu
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
- School of Science, Shenyang Aerospace University, Shenyang 110136, China
| | - Qiuying Du
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Xue Wu
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Ruili Shi
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Linwei Sai
- Department of Mathematics and Physics, Hohai University, Changzhou 213022, China
| | - Xiaoqing Liang
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Xiaoming Huang
- School of Ocean Science and Technology, Dalian University of Technology, Panjin 124221, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
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Tsunoyama H, Shibuta M, Nakaya M, Eguchi T, Nakajima A. Synthesis and Characterization of Metal-Encapsulating Si 16 Cage Superatoms. Acc Chem Res 2018; 51:1735-1745. [PMID: 29715011 DOI: 10.1021/acs.accounts.8b00085] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Nanoclusters, aggregates of several to hundreds of atoms, have been one of the central issues of nanomaterials sciences owing to their unique structures and properties, which could be found neither in nanoparticles with several nanometer diameters nor in organometallic complexes. Along with the chemical nature of each element, properties of nanoclusters change dramatically with size parameters, making nanoclusters strong potential candidates for future tailor-made materials; these nanoclusters are expected to have attractive properties such as redox activity, catalysis, and magnetism. Alloying of nanoclusters additionally gives designer functionality by fine control of their electronic structures in addition to size parameters. Among binary nanoclusters, binary cage superatoms (BCSs) composed of transition metal (M) encapsulating silicon cages, M@Si16, have unique cage structures of 16 silicon atoms, which have not been found in elemental silicon nanoclusters, organosilicon compounds, and silicon based clathrates. The unique composition of these BCSs originates from the simultaneous satisfaction of geometric and electronic shell-closings in terms of cage geometry and valence electron filling, where a total of 68 valence electrons occupy the superatomic orbitals of (1S)2(1P)6(1D)10(1F)14(2S)2(1G)18(2P)6(2D)10 for M = group 4 elements in neutral ground state. The most important issue for M@Si16 BCSs is fine-tuning of their characters by replacement of the central metal atoms, M, based on one-by-one adjustment of valence electron counts in the same structure framework of Si16 cage; the replacement of M yields a series of M@Si16 BCSs, based on their superatomic characteristics. So far, despite these unique features probed in the gas-phase molecular beam and predicted by quantum chemical calculations, M@Si16 have not yet been isolated. In this Account, we have focused on recent advances in synthesis and characterizations of M@Si16 BCSs (M = Ti and Ta). A series of M@Si16 BCSs (M = groups 3 to 5) was found in gas-phase molecular beam experiments by photoelectron spectroscopy and mass spectrometry: formation of halogen-, rare-gas-, and alkali-like superatoms was identified through one-by-one tuning of number of total valence electrons. Toward future functional materials in the solid state, we have developed an intensive, size-selected nanocluster source based on high-power impulse magnetron sputtering coupled with a mass spectrometer and a soft-landing apparatus. With scanning probe microscopy and photoelectron spectroscopy, the structure of surface-immobilized BCSs has been elucidated; BCSs can be dispersed in an isolated form using C60 fullerene decoration of the substrate. The intensive nanocluster source also enables the synthesis of BCSs in the 100-mg scale by coupling with a direct liquid-embedded trapping method into organic dispersants, enabling their structure characterization as a highly symmetric "metal-encapsulating tetrahedral silicon-cage" (METS) structure with Frank-Kasper geometry.
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Affiliation(s)
- Hironori Tsunoyama
- Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
| | - Masahiro Shibuta
- Keio Institute of Pure and Applied Sciences (KiPAS), Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
| | - Masato Nakaya
- Department of Energy Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Toyoaki Eguchi
- Department of Physics, Graduate School of Science, Tohoku University, 6-3, Aramaki Aza-Aoba, Aoba-ku, Sendai 980-8578, Japan
| | - Atsushi Nakajima
- Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
- Keio Institute of Pure and Applied Sciences (KiPAS), Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Ideal gas thermochemical properties of silicon containing inorganic, organic compounds, radicals, and ions. INT J CHEM KINET 2018. [DOI: 10.1002/kin.21188] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
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Xie X, Hao D, Liu Y, Yang J. Samarium doped silicon clusters SmSi (n= 3–10) and their anions: Structures, thermochemistry, electron affinities, and magnetic moments. COMPUT THEOR CHEM 2015. [DOI: 10.1016/j.comptc.2015.10.003] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Xie X, Hao D, Yang J. Ytterbium doped silicon clusters YbSi (n= 4–10) and their anions: Structures, thermochemistry, and electron affinities. Chem Phys 2015. [DOI: 10.1016/j.chemphys.2015.08.024] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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7
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Europium-doped silicon clusters EuSi n (n = 3–11) and their anions: structures, thermochemistry, electron affinities, and magnetic moments. Theor Chem Acc 2015. [DOI: 10.1007/s00214-015-1684-9] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Heats of formation and thermochemical parameters of small silicon clusters and their ions, with n=2–13. Chem Phys Lett 2013. [DOI: 10.1016/j.cplett.2013.08.051] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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Nakajima A. Study on Electronic Properties of Composite Clusters toward Nanoscale Functional Advanced Materials. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2013. [DOI: 10.1246/bcsj.20120298] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Atsushi Nakajima
- Department of Chemistry, Faculty of Science and Technology, Keio University
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MAKWANI DIKSHA, VIJAYA R. FREQUENCY-DEPENDENT POLARIZABILITY OF SMALL SILICON CLUSTERS. INTERNATIONAL JOURNAL OF NANOSCIENCE 2011. [DOI: 10.1142/s0219581x11008058] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
Polarizability of small Si n (n = 3 to 9) clusters has been calculated using density functional theory (DFT) with Vosko–Wilk–Nusair (VWN) correlation functional. The computed values of polarizability per atom tend to decrease with increasing cluster size. Frequency-dependent polarizability of Si 3, Si 4, Si 6, and Si 9 clusters demonstrates that the polarizability increases slowly with the increase in the energy for energy values less than 1.2 eV but exhibit the same size-dependent features as the static polarizability. The first resonance energy for Si 3, Si 4, Si 6, and Si 9 clusters occur at 1.25, 1.63, 2.5, and 1.98 eV, respectively. Moreover, the anisotropic polarizability is found to be the highest for Si 9 cluster.
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Affiliation(s)
- DIKSHA MAKWANI
- Department of Physics, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400 076, India
| | - R. VIJAYA
- Department of Physics, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400 076, India
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Fan H, Ren Z, Yang J, Hao D, Zhang Q. Study on structures and electronic properties of neutral and charged (n=2–10) clusters with a Gaussian-3 theory. ACTA ACUST UNITED AC 2010. [DOI: 10.1016/j.theochem.2010.07.022] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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12
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Fan H, Yang J, Lu W, Ning H, Zhang Q. Structures and Electronic Properties of Beryllium Atom Encapsulated in Sin(0,−1) (n = 2−10) Clusters. J Phys Chem A 2009; 114:1218-23. [DOI: 10.1021/jp910326a] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Hongwei Fan
- School of Chemical Engineering and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, Department of Chemistry and Institute of Applied Chemistry, Chinese Culture University, Taipei, Taiwan 11114
| | - Jucai Yang
- School of Chemical Engineering and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, Department of Chemistry and Institute of Applied Chemistry, Chinese Culture University, Taipei, Taiwan 11114
| | - Wei Lu
- School of Chemical Engineering and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, Department of Chemistry and Institute of Applied Chemistry, Chinese Culture University, Taipei, Taiwan 11114
| | - Hongmei Ning
- School of Chemical Engineering and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, Department of Chemistry and Institute of Applied Chemistry, Chinese Culture University, Taipei, Taiwan 11114
| | - Qiancheng Zhang
- School of Chemical Engineering and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, Department of Chemistry and Institute of Applied Chemistry, Chinese Culture University, Taipei, Taiwan 11114
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Bundhun A, Ramasami P, Schaefer HF. Germylene Energetics: Electron Affinities and Singlet−Triplet Gaps of GeX2 and GeXY Species (X, Y = H, CH3, SiH3, GeH3, F, Cl, Br, I). J Phys Chem A 2009; 113:8080-90. [DOI: 10.1021/jp900735w] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Ashwini Bundhun
- Department of Chemistry, University of Mauritius, Réduit, Mauritius, and Center for Computational Quantum Chemistry, University of Georgia, Athens, Georgia 30602
| | - Ponnadurai Ramasami
- Department of Chemistry, University of Mauritius, Réduit, Mauritius, and Center for Computational Quantum Chemistry, University of Georgia, Athens, Georgia 30602
| | - Henry F. Schaefer
- Department of Chemistry, University of Mauritius, Réduit, Mauritius, and Center for Computational Quantum Chemistry, University of Georgia, Athens, Georgia 30602
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Koyasu K, Atobe J, Furuse S, Nakajima A. Anion photoelectron spectroscopy of transition metal- and lanthanide metal-silicon clusters: MSin− (n=6–20). J Chem Phys 2008; 129:214301. [DOI: 10.1063/1.3023080] [Citation(s) in RCA: 116] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Hao D, Liu J, Yang J. A Gaussian-3 Theoretical Study of Small Silicon−Lithium Clusters: Electronic Structures and Electron Affinities of SinLi− (n = 2−8). J Phys Chem A 2008; 112:10113-9. [DOI: 10.1021/jp804393k] [Citation(s) in RCA: 29] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Dongsheng Hao
- School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China
| | - Jinrong Liu
- School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China
| | - Jucai Yang
- School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China, and School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China
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Furuse S, Koyasu K, Atobe J, Nakajima A. Experimental and theoretical characterization of MSi16−, MGe16−,MSn16−, and MPb16− (M=Ti, Zr, and Hf): The role of cage aromaticity. J Chem Phys 2008; 129:064311. [DOI: 10.1063/1.2966005] [Citation(s) in RCA: 90] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Kinoo FS, Ramasami P. Molecular structure, atomization energy, ionization energy, electron affinity and vibrational spectrum of SiX2(X = F, Cl, Br, I) by theoretical methods. MAIN GROUP CHEMISTRY 2008. [DOI: 10.1080/10241220801946098] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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18
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Hao FY, Zhao YF, Jing XG, Li XY, Liu FL. Geometrical and electronic structures of the Sn n Cl and Sn n Cl− (n = 1–6) clusters. Mol Phys 2007. [DOI: 10.1080/00268970600628151] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
Affiliation(s)
- F. Y. Hao
- a Center for Condensed Matter Science and Technology , Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - Y. F. Zhao
- a Center for Condensed Matter Science and Technology , Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - X. G. Jing
- a Center for Condensed Matter Science and Technology , Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - X. Y. Li
- a Center for Condensed Matter Science and Technology , Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - F. L. Liu
- a Center for Condensed Matter Science and Technology , Harbin Institute of Technology , Harbin 150001, People's Republic of China
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Koyasu K, Atobe J, Akutsu M, Mitsui M, Nakajima A. Electronic and Geometric Stabilities of Clusters with Transition Metal Encapsulated by Silicon. J Phys Chem A 2006; 111:42-9. [PMID: 17201386 DOI: 10.1021/jp066757f] [Citation(s) in RCA: 145] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Silicon clusters mixed with a transition metal atom, MSin, were generated by a double-laser vaporization method, and the electronic and geometric stabilities for the resulting clusters with transition metal encapsulated by silicon were examined experimentally. By means of a systematic doping with transition metal atoms of groups 3, 4, and 5 (M = Sc, Y, Lu, Ti, Zr, Hf, V, Nb, and Ta), followed by changes of charge states, we explored the use of an electronic closing of a silicon caged cluster and variations in its cavity size to facilitate metal-atom encapsulation. Results obtained by mass spectrometry, anion photoelectron spectroscopy, and adsorption reactivity toward H2O show that the neutral cluster doped with a group 4 atom features an electronic and a geometric closing at n = 16. The MSi(16) cluster with a group 4 atom undergoes an electronic change in (i) the number of valence electrons when the metal atom is substituted by the neighboring metals with a group 3 or 5 atom and in (ii) atomic radii with the substitution of the same group elements of Zr and Hf. The reactivity of a halogen atom with the MSi(16) clusters reveals that VSi(16)F forms a superatom complex with ionic bonding.
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Affiliation(s)
- Kiichirou Koyasu
- Department of Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan
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Nigam S, Majumder C, Kulshreshtha SK. Structural and electronic properties of Sin, Sin−, and PSin−1 clusters (2⩽n⩽13): Theoretical investigation based on ab initio molecular orbital theory. J Chem Phys 2006; 125:074303. [PMID: 16942335 DOI: 10.1063/1.2244569] [Citation(s) in RCA: 43] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
The geometric and electronic structures of Si(n), Si(n)-, and PSi(n-1) clusters (2 < or = n < or = 13) have been investigated using the ab initio molecular orbital theory formalism. The hybrid exchange-correlation energy functional (B3LYP) and a standard split-valence basis set with polarization functions (6-31+G(d)) were employed to optimize geometrical configurations. The total energies of the lowest energy isomers thus obtained were recalculated at the MP2/aug-cc-pVTZ level of theory. Unlike positively charged clusters, which showed similar structural behavior as that of neutral clusters [Nigam et al., J. Chem. Phys. 121, 7756 (2004)], significant geometrical changes were observed between Si(n) and Si(n)- clusters for n = 6, 8, 11, and 13. However, the geometries of P substituted silicon clusters show similar growth as that of negatively charged Si(n) clusters with small local distortions. The relative stability as a function of cluster size has been verified based on their binding energies, second difference in energy (Delta2 E), and fragmentation behavior. In general, the average binding energy of Si(n)- clusters is found to be higher than that of Si(n) clusters. For isoelectronic PSi(n-1) clusters, it is found that although for small clusters (n < 4) substitution of P atom improves the binding energy of Si(n) clusters, for larger clusters (n > or = 4) the effect is opposite. The fragmentation behavior of these clusters reveals that while small clusters prefer to evaporate monomer, the larger ones dissociate into two stable clusters of smaller size. The adiabatic electron affinities of Si(n) clusters and vertical detachment energies of Si(n)- clusters were calculated and compared with available experimental results. Finally, a good agreement between experimental and our theoretical results suggests good prediction of the lowest energy isomeric structures for all clusters calculated in the present study.
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Affiliation(s)
- Sandeep Nigam
- Chemistry Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India
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Sun S, Liu H, Tang Z. Experimental and theoretical investigation on binary semiconductor clusters of Bi/Si, Bi/Ge, and Bi/Sn. J Phys Chem A 2006; 110:5004-9. [PMID: 16610818 DOI: 10.1021/jp057242b] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Bi(m)M(n)- (M = Si, Ge, Sn) binary cluster anions are generated by using laser ablation on mixtures of Bi and M (M = Si, Ge, Sn) samples and studied by reflectron time-of-flight mass spectrometer (RTOF-MS) in the gas phase. Some magic number clusters are present in the mass spectra which indicate that they are in stable structures. For small anions (m + n < or = 6), their structures are investigated with the DFT method and the energetically lowest lying structures are obtained. For the binary anionic clusters with the same composition containing Si, Ge, and Sn, they share similar geometric and electronic structure in the small size except that BiSi3-, BiSi5-, Bi2Si2-, Bi2Si3-, and Bi4Sn2- are different for the lowest energetic structures, and the ground states for all the anions are in their lowest spin states. The calculated VDE (vertical detachment energy) and binding energy confirm the obviously magic number cluster of BiM4- (M = Si, Ge, Sn), which agrees with the experimental results.
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Affiliation(s)
- Shutao Sun
- State Key Laboratory of Molecular Reaction Dynamics, Center of Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, PR China
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Larkin JD, Bock CW, Schaefer Iii HF. Assessing Alkyl-, Silyl-, and Halo-Substituent Effects on the Electron Affinities of Silyl Radicals. J Phys Chem A 2005; 109:10100-5. [PMID: 16838930 DOI: 10.1021/jp052439p] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Neutral anion energy differences for a large class of alpha-substituted silyl radicals have been computed to determine the effect of alkyl, silyl, and halo substituents on their electron affinities. In particular, we report theoretical predictions of the adiabatic electron affinities (AEAs), vertical electron affinities (VEAs), and vertical detachment energies (VDEs) for a series of methyl-, silyl-, and halo-substituted silyl radical compounds. This work utilizes the carefully calibrated DZP++ basis set, in conjunction with the pure BLYP and OLYP functionals, as well as with the hybrid B3LYP, BHLYP, PBE1PBE, MPW1K, and O3LYP functionals. Bromine has the largest effect in stabilizing the anions, and the BLYP/DZP++ AEA for SiBr(3) is 3.29 eV. The other predicted electron affinities are for SiH(3) (1.37 eV), SiH(2)CH(3) (1.09 eV), SiH(2)F (1.54 eV), SiH(2)Cl (1.94 eV), SiH(2)Br (2.05 eV), SiH(2)(SiH(3)) (1.77 eV), SiH(CH(3))(2) (0.92 eV), SiHF(2) (1.86 eV), SiHCl(2) (2.53 eV), SiHBr(2) (2.67 eV), Si(CH(3))(3) (0.86 eV), SiF(3) (2.66 eV), SiCl(3) (3.21 eV), Si(SiH(3))(3) (2.25 eV), and SiFClBr (3.13 eV). For the five silyl radicals where experimental data are available, the BLYP functional gives the most accurate determination of AEAs; the average absolute error is 0.04(1) eV, whereas the corresponding errors for the O3LYP, MPW1K, PBE1PBE, B3LYP, OLYP, and BHLYP functionals are 0.05(8), 0.06(0), 0.06(3), 0.08(5), 0.11(5), and 0.15(3) eV, respectively.
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Affiliation(s)
- Joseph D Larkin
- Center for Computational Chemistry, University of Georgia, Athens, Georgia 30602, USA
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Koyasu K, Akutsu M, Mitsui M, Nakajima A. Selective formation of MSi16 (M = Sc, Ti, and V). J Am Chem Soc 2005; 127:4998-9. [PMID: 15810816 DOI: 10.1021/ja045380t] [Citation(s) in RCA: 167] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Metal-encapsulated silicon cage clusters are a new class of clusters and are opening up new avenues for silicon-based nanoscale materials. We present experimental evidence for a highly stable cluster corresponding to M@Si16 (M = Sc, Ti, and V). Mass spectrometry and anion photoelectron spectroscopy show that the cluster features an electronically closed TiSi16 neutral core which undergoes a change in the number of valence electrons involving (i) substitution of neighboring metals with Sc and V, or (ii) addition of a halogen atom to the TiSi16 anion, and that VSi16F is predicted to form an ionically bound superatom complex.
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Affiliation(s)
- Kiichirou Koyasu
- Department of Chemistry, Faculty of Science & Technology, Keio University, Kohoku-ku, Yokohama 223-8522, Japan
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Yang J, Xu W, Xiao W. The small silicon clusters Sin (n=2–10) and their anions: structures, themochemistry, and electron affinities. ACTA ACUST UNITED AC 2005. [DOI: 10.1016/j.theochem.2004.12.035] [Citation(s) in RCA: 84] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Larkin JD, Schaefer HF. The ability of silylenes to bind excess electrons: electron affinities of SiX(2), and SiXY species (X,Y=H,CH(3),SiH(3),F,Cl,Br). J Chem Phys 2004; 121:9361-7. [PMID: 15538855 DOI: 10.1063/1.1790951] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Recently, Ishida and co-workers have isolated silylene radical anions via the one-electron reduction of isolable cyclic dialkylsilylenes, discovering these corresponding radical anions to be relatively stable at low temperatures. Herein we report theoretical predictions of the adiabatic electron affinities (AEA), vertical electron affinities, and vertical detachment energies of a series of methyl, silyl, and halosubstituted silylene compounds. This research utilizes the carefully calibrated DZP++ basis with the combination of the popular nonhybrid and hybrid DFT functionals, BLYP, B3LYP, and BHHLYP. The level of theory employed and the ensemble of species under study confirm the ability of silylenes to bind excess electrons with Si(SiH(3))(2) being the most effective, having a predicted AEA of 1.95 eV. While it is known that methyl substituents have a diminishing effect on the computed electron affinities (EAs), it is shown that fluorine shows an analogous negative effect. Similarly, previous suggestions that Si(CH(3))(2) will not bind an electron appear incorrect, with EA[Si(CH(3))(2)] predicted here to be 0.46 eV.
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Affiliation(s)
- Joseph D Larkin
- Center for Computational Chemistry, University of Georgia, Athens, Georgia 30602, USA
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Li Q, Li G, Xu W, Xie Y, Schaefer HF. Molecules for materials: structures, thermochemistry, and electron affinities of the digermanium fluorides Ge2Fn/Ge2Fn- (n = 1-6): a wealth of unusual structures. Chemphyschem 2002; 3:179-94. [PMID: 12503125 DOI: 10.1002/1439-7641(20020215)3:2<179::aid-cphc179>3.0.co;2-4] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Abstract
A systematic investigation of Ge2Fn/Ge2Fn- systems was carried out with five density functional theory (DFT) methods in conjunction with DZP++ basis sets. For each compound various structures, including minima, transition states and other energetically low lying stationary points, were optimized. The geometries and relative energies are discussed and compared. Adiabatic electron affinities, vertical electron affinities and anion vertical detachment energies are reported. Three types of dissociation energies pertaining to the global minima for each compound are reported. The theoretical predictions are in good agreement with the limited available experimental results. Many unusual structural features are predicted for these systems. Neutral Ge2F is predicted to have a bridged C2v structure, while its anion is very floppy, with the bridged structure very slightly favoured. The Ge2F2 molecule is predicted to have the butterfly structure known from experiment for Si2H2, while the Ge2F3- ion has a trans-bent structure. Ge2F3 is predicted to have an unprecedented FGe-F-GeF structure with no Ge-Ge bond, while its anion has a somewhat more conventional monobridged structure, analogous to that of the nonclassical vinyl cation. Neutral Ge2F4 has a dibridged structure of C2h symmetry, while its anion has a trans-bent structure with a very long Ge-Ge bond. The Ge2F5 molecule is doubly bridged and has no Ge-Ge bond, while the anion is of the type F2Ge-F-GeF2, again with no Ge-Ge bond. Ge2F6 has the anticipated ethane structure, as does its anion, but with a very long Ge-Ge bond. The adiabatic electron affinities (EAad) are predicted to be 2.12 (Ge2F), 2.03 (Ge2F2), 2.02 (Ge2F3), 1.64 (Ge2F4), 4.57 (Ge2F5), and 2.66 eV (Ge2F6), respectively, by the BHLYP method, which is regarded as the best method in the present paper for predicting EAs. Comparisons with the analogous C2Fn and Si2Fn systems reveals some interesting trends and differences. For example, while C2F6 will not capture an electron, Si2F6 is predicted to have small electron affinity (0.73 eV), while that of Ge2F6 is substantial. The same trend to larger EAs on going down the Periodic Table is seen for the X2F5 systems, with 1.77 (C2F5), 2.68 (Si2F5), and 4.57 eV (Ge2F5). However, the EAs do not follow a monotonic trend for the X2F, X2F3 and X2F4 systems with respect to the series X = C, Si, Ge.
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Affiliation(s)
- Qianshu Li
- School of Chemical Engineering and Materials Science, Beijing Institute of Technology, Beijing, 100081, China
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Rienstra-Kiracofe JC, Tschumper GS, Schaefer HF, Nandi S, Ellison GB. Atomic and molecular electron affinities: photoelectron experiments and theoretical computations. Chem Rev 2002; 102:231-82. [PMID: 11782134 DOI: 10.1021/cr990044u] [Citation(s) in RCA: 855] [Impact Index Per Article: 38.9] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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LI GUOLIANG, LI QIANSHU, XU WENGUO, XIE YAOMING, SCHAEFER HENRYF. Structures, thermochemistry, and electron affinities of the disilicon fluorides, Si2Fn/Si2F−n(n= 1–6). Mol Phys 2001. [DOI: 10.1080/00268970110042811] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
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Kawamata H, Negishi Y, Nakajima A, Kaya K. Electronic properties of substituted aluminum clusters by boron and carbon atoms (Al B−/Al C−); new insights into s–p hybridization and perturbed shell structures. Chem Phys Lett 2001. [DOI: 10.1016/s0009-2614(01)00198-1] [Citation(s) in RCA: 52] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Chien SH, Li WK, Ma NL. Thermochemistry of Hydrochlorofluorosilanes: A Gaussian-3 Study. J Phys Chem A 2000. [DOI: 10.1021/jp0022499] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Siu-Hung Chien
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, and Chemical Application Division, Institute of High Performance Computing, 89C Science Park Drive, #02-11/12 The Rutherford, Singapore 118261
| | - Wai-Kee Li
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, and Chemical Application Division, Institute of High Performance Computing, 89C Science Park Drive, #02-11/12 The Rutherford, Singapore 118261
| | - N. L. Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, and Chemical Application Division, Institute of High Performance Computing, 89C Science Park Drive, #02-11/12 The Rutherford, Singapore 118261
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Muller J, Liu B, Shvartsburg AA, Ogut S, Chelikowsky JR, Siu KW, Ho KM, Gantefor G. Spectroscopic evidence for the tricapped trigonal prism structure of semiconductor clusters. PHYSICAL REVIEW LETTERS 2000; 85:1666-1669. [PMID: 10970584 DOI: 10.1103/physrevlett.85.1666] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2000] [Indexed: 05/23/2023]
Abstract
We have obtained photoelectron spectra (PES) for silicon cluster anions with up to 20 atoms. Efficient cooling of species in the source has allowed us to resolve multiple features in the PES for all sizes studied. Spectra for an extensive set of low-energy Si(-)(n) isomers found by a global search have been simulated using density functional theory and pseudopotentials. Except for n = 12, calculations for Si(-)(n) ground states agree with the measurements. This does not hold for other plausible geometries. Hence PES data validate the tricapped trigonal prism morphologies for medium-sized Si clusters.
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Affiliation(s)
- J Muller
- Fachbereich Physik, Universitat Konstanz, 78457 Konstanz, Germany
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Han JG. A computational study on electronic structures of GenF− and GenF (n=3–6) clusters by density functional theory. Chem Phys Lett 2000. [DOI: 10.1016/s0009-2614(00)00581-9] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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Han JG. Density functional studies on the molecular geometries, vibrational frequencies, electron affinities of X 2 F − (X=C,Si,Ge) cluster. ACTA ACUST UNITED AC 1999. [DOI: 10.1016/s0166-1280(99)00041-x] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Yoshida S, Fuke K. Photoionization studies of germanium and tin clusters in the energy region of 5.0–8.8 eV: Ionization potentials for Gen (n=2–57) and Snn (n=2–41). J Chem Phys 1999. [DOI: 10.1063/1.479691] [Citation(s) in RCA: 79] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Taylor TR, Asmis KR, Xu C, Neumark DM. Evolution of electronic structure as a function of size in gallium phosphide semiconductor clusters. Chem Phys Lett 1998. [DOI: 10.1016/s0009-2614(98)01104-x] [Citation(s) in RCA: 72] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Negishi Y, Kawamata H, Hayakawa F, Nakajima A, Kaya K. The infrared HOMO–LUMO gap of germanium clusters. Chem Phys Lett 1998. [DOI: 10.1016/s0009-2614(98)00874-4] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/16/2022]
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Kishi R, Negishi Y, Kawamata H, Iwata S, Nakajima A, Kaya K. Geometric and electronic structures of fluorine bound silicon clusters. J Chem Phys 1998. [DOI: 10.1063/1.475343] [Citation(s) in RCA: 34] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Kohno M, Suzuki S, Shiromaru H, Moriwaki T, Achiba Y. Ultraviolet photoelectron spectroscopy on the linear conformer of negatively charged carbon clusters Cn− (10≤n≤16). Chem Phys Lett 1998. [DOI: 10.1016/s0009-2614(97)01273-6] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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Kishi R, Kawamata H, Negishi Y, Iwata S, Nakajima A, Kaya K. Geometric and electronic structures of silicon–sodium binary clusters. II. Photoelectron spectroscopy of SinNam− cluster anions. J Chem Phys 1997. [DOI: 10.1063/1.474160] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Negishi Y, Kawamata H, Hayase T, Gomei M, Kishi R, Hayakawa F, Nakajima A, Kaya K. Photoelectron spectroscopy of germanium-fluorine binary cluster anions: the HOMO-LUMO gap estimation of Gen clusters. Chem Phys Lett 1997. [DOI: 10.1016/s0009-2614(97)00284-4] [Citation(s) in RCA: 66] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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