First-order nonadiabatic couplings in extended systems by time-dependent density functional theory

Energy-Conserving Surface Hopping for Auger Processes

Auger-type processes are ubiquitous in nanoscale materials because quantum confinement enhances Coulomb interactions, and there exist large densities of states. Modeling Auger processes requires the modification of nonadiabatic (NA) molecular dynamics algorithms to include transitions caused by both NA and Coulomb couplings. The system is split into quantum and classical subsystems, e.g., electrons and vibrations, and as a result, energy conservation becomes nontrivial. In surface hopping, an electronic transition induced by NA coupling is accompanied by a classical velocity readjustment to ensure conservation of the total quantum-classical energy. A different treatment is needed for Auger transitions driven by Coulomb interactions. We develop a nonadiabatic molecular dynamics methodology that meticulously differentiates the energy redistribution accompanying hops induced by the NA coupling and the Coulomb interaction and correctly conserves the total energy at each transition. If the transition is driven by a Coulomb interaction, the hop energy is redistributed within the quantum electronic subsystem only. If the transition is NA, the energy is redistributed between the quantum and classical subsystems. Properly maintaining energy conservation for both types of transitions is crucial to generate a correct order of events, obtain accurate transition times, maintain a proper statistical distribution of state populations, and reach thermodynamic equilibrium. We test the method with biexciton annihilation and Auger-assisted hot electron relaxation in a CdSe quantum dot. The sequence of Auger and phonon-driven processes and the calculated time scales are in excellent agreement with the experimental results. The developed approach can be coupled with any surface-hopping method and provides a crucial practical advance to study charge-carrier dynamics in the nanoscale and condensed matter systems.

Exciton dispersion and exciton-phonon interaction in solids by time-dependent density functional theory

Understanding, predicting, and ultimately controlling exciton band structure and exciton dynamics are central to diverse chemical and materials problems. Here, we have developed a first-principles method to determine exciton dispersion and exciton-phonon interaction in semiconducting and insulating solids based on time-dependent density functional theory. The first-principles method is formulated in planewave bases and pseudopotentials and can be used to compute exciton band structures, exciton charge density, ionic forces, the non-adiabatic coupling matrix between excitonic states, and the exciton-phonon coupling matrix. Based on the spinor formulation, the method enables self-consistent noncollinear calculations to capture spin-orbital coupling. Hybrid exchange-correlation functionals are incorporated to deal with long-range electron-hole interactions in solids. A sub-Hilbert space approximation is introduced to reduce the computational cost without loss of accuracy. For validations, we have applied the method to compute the exciton band structure and exciton-phonon coupling strength in transition metal dichalcogenide monolayers; both agree very well with the previous GW-Bethe-Salpeter equation and experimental results. This development paves the way for accurate determinations of exciton dynamics in a wide range of solid-state materials.

Accelerating Linear-Response Time-Dependent Hybrid Density Functional Theory with Low-Rank Decomposition Techniques in the Plane-Wave Basis

We present an efficient low-rank implementation of linear-response time-dependent density functional theory for hybrid functionals (hybrid-LR-TDDFT) within the plane-wave pseudopotential framework. The adaptively compressed exchange (ACE) operator and the natural transition orbitals (NTOs) are introduced to build the low-rank representation of the nonlocal exchange operator in the hybrid-LR-TDDFT Hamiltonian. Numerical tests demonstrate that the ACE approximation significantly reduces the computational cost of applying the nonlocal exchange operator without loss of accuracy, and the NTO approximation can further accelerate the hybrid-LR-TDDFT calculations by introducing an NTO cutoff parameter. This new method enables us to effectively study the excitonic properties of two-dimensional MoS₂ consisting of 216 atoms and ∼1900 electrons with range-separated hybrid functionals on a single graphics processing unit.

NAC-TDDFT: Time-Dependent Density Functional Theory for Nonadiabatic Couplings

First-order nonadiabatic coupling (NAC) matrix elements (fo-NACMEs) are the basic quantities in theoretical descriptions of electronically nonadiabatic processes that are ubiquitous in molecular physics and chemistry. Given the large size of systems of chemical interests, time-dependent density functional theory (TDDFT) is usually the first choice of methods. However, the lack of many-electron wave functions in TDDFT renders the formulation of NAC-TDDFT for fo-NACMEs conceptually difficult. Because of this, various variants of NAC-TDDFT have been proposed in the literature from different standing points, including the Hellmann-Feynman-like expression and auxiliary/pseudo-wave function (AWF)-, equation-of-motion (EOM)-, and time-dependent perturbation theory (TDPT)-based formulations. Based on critical analyses, the following conclusions are made here: (1) The Hellmann-Feynman-like expression, which is rooted in exact wave function theory, is hardly useful due to huge demand on basis sets. (2) Although most popular, the AWF variants of NAC-TDDFT are not theoretically founded and become ambiguous particularly for the fo-NACMEs between two excited states, although they do agree with the EOM and TDPT variants under the Tamm-Dancoff approximation. (3) The TDPT variant of NAC-TDDFT is theoretically most rigorous but suffers from numerical instabilities on the one hand and does not differ to a significant extent from the EOM variant on the other hand. (4) As such, the EOM variant of NAC-TDDFT for the fo-NACMEs between the ground and excited states and between two excited states is solely the right choice in practice. These formal analyses are fully supported by numerical experimentations, taking azulene as a showcase. The proper implementation of the EOM variant of NAC-TDDFT is also highlighted, showing that the fo-NACMEs between the ground and excited states and between two excited states are computationally very much the same as the analytic energy gradients of DFT and TDDFT, respectively. Possible future developments of the EOM variant of NAC-TDDFT are also highlighted. Its extensions to spin-adapted open-shell TDDFT and proper treatment of spin-orbit couplings (which are another source of force for electronically nonadiabatic processes) are particularly warranted in the near future.

Modeling Auger Processes with Nonadiabatic Molecular Dynamics

Auger-type energy exchange plays key roles in the carrier dynamics in nanomaterials due to strong carrier-carrier interactions. However, theoretical descriptions are limited to perturbative calculations of scattering rates on static structures. We develop an accurate and efficient ab initio technique to model Auger scattering with nonadiabatic molecular dynamics. We incorporate the many-body Coulomb matrix into several surface hopping methods and describe simultaneously charge-charge and charge-phonon scattering in the time-domain and in a nonperturbative, configuration-dependent manner. The approach is illustrated with a CdSe quantum dot. Auger scattering between electrons and holes breaks the phonon bottleneck to electron relaxation. The bottleneck is recovered when electrons and holes are decoupled. The simulations correctly reproduce all experimental processes and time scales, including Auger- and phonon-assisted cooling of hot electrons, intraband carrier relaxation, and carrier recombination. Providing detailed insights into the energy flow, the developed method allows studies of carrier dynamics in nanomaterials with strong carrier-carrier interactions.

Suppression of Electron-Hole Recombination by Intrinsic Defects in 2D Monoelemental Material

The Shockley-Read-Hall (SRH) model, in which the deep trap defect states in the band gap are proposed as nonradiative electron-hole (e-h) recombination centers, has been widely used to describe the nonradiative e-h recombination through the defects in semiconductor. By using the ab initio nonadiabatic molecular dynamics method, we find that the SRH model fails to describe the e-h recombination behavior for defects in 2D monoelemental material such as monolayer black phosphorus (BP). Through the investigation of three intrinsic defects with shallow and deep defect states in monolayer BP, it is found that, surprisingly, none of these defects significantly accelerates the e-h recombination. Further analysis shows that because monolayer BP is a monoelemental material, the distinct impurity phonon, which often induces fast e-h recombination, is not formed. Moreover, because of the flexibility of 2D material, the defects scatter the phonons present in pristine BP, generating multiple modes with lower frequencies compared with the pristine BP, which further suppresses the e-h recombination. We propose that the conclusion can be extended to other monoelemental 2D materials, which is important guidance for the future design of functional semiconductors.