Pb dimerization greatly accelerates charge losses in MAPbI3: Time-domain ab initio analysis

Enhancing the stability and efficiency of MAPbI3 perovskite solar cells by theophylline-BF4 - alkaloid derivatives, a theoretical-experimental approach

Perovskite solar cells (PSCs) are an evolving photovoltaic field with the potential to disrupt the established silicon solar cell market. However, the presence of many transport barriers and defect trap states at the interfaces and grain boundaries has negative effects on PSCs; it decreases their efficiency and stability. The purpose of this work was to investigate the effects on efficiency and stability achieved by quaternary theophylline additives in MAPbI₃ PSCs with the structure FTO/TiO₂/perovskite/spiro-OMeTAD/Ag. The X-ray photoelectron spectroscopy (XPS) and theoretical calculation strategies were applied to study the additive's interaction in the layer. The tetrafluoroborinated additive results in an increase in device current density (J _SC) (23.99 mA cm^-1), fill factor (FF) (65.7%), and open-circuit voltage (V _OC) (0.95 V), leading to significant improvement of the power conversion efficiency (PCE) to 15.04% compared to control devices (13.6%). Notably, films exposed to controlled humidity of 30% using the tetrafluoroborinated additive maintained their stability for more than 600 hours (h), while the control films were stable for less than 240 hours (h).

Defect-Polaron and Enormous Light-Induced Fermi-Level Shift at Halide Perovskite Surface

Halide perovskites intrinsically contain a large amount of point defects. The interaction of these defects with photocarriers, photons, and lattice distortion remains a complex and unresolved issue. We found that for halide perovskite films with excess halide vacancies, the Fermi level can be shifted by as much as 0.7 eV upon light illumination. These defects can trap photocarriers for hours after the light illumination is turned off. The enormous light-induced Fermi level shift and the prolonged electron trapping are explained by the capturing of photocarriers by halide vacancies at the surface of the perovskite film. The formation of this defect-photocarrier complex can result in lattice deformation and an energy shift in the defect state. The whole process is akin to polaron formation at a defect site. Our data also suggest that these trapped carriers increase the electrical polarizability of the lattice, presumably by enhancing the defect migration rate.

How Hole Injection Accelerates Both Ion Migration and Nonradiative Recombination in Metal Halide Perovskites

Ion migration, hole trapping, and electron-hole recombination are common processes in metal halide perovskites. We demonstrate using ab initio non-adiabatic molecular dynamics and time-domain density functional theory that they are intricately related and strongly influence each other. The hole injection accelerates ion migration by decreasing the diffusion barrier and shortening the migration length. The injected hole also promotes the nonradiative charge recombination by strengthening electron-phonon interactions in the low-frequency region and prolonging the quantum coherence time. The synergy stems from the soft perovskite lattice and response of the valence band maximum to the Pb-I lattice distortion induced by the hole. This work provides important insights into the influence of ion mobility and hole injection on the performance of perovskite solar cells and suggests that high concentration of holes should be avoided.

Ab initio nonadiabatic molecular dynamics of charge carriers in metal halide perovskites

Photoinduced nonequilibrium processes in nanoscale materials play key roles in photovoltaic and photocatalytic applications. This review summarizes recent theoretical investigations of excited state dynamics in metal halide perovskites (MHPs), carried out using a state-of-the-art methodology combining nonadiabatic molecular dynamics with real-time time-dependent density functional theory. The simulations allow one to study evolution of charge carriers at the ab initio level and in the time-domain, in direct connection with time-resolved spectroscopy experiments. Eliminating the need for the common approximations, such as harmonic phonons, a choice of the reaction coordinate, weak electron-phonon coupling, a particular kinetic mechanism, and perturbative calculation of rate constants, we model full-dimensional quantum dynamics of electrons coupled to semiclassical vibrations. We study realistic aspects of material composition and structure and their influence on various nonequilibrium processes, including nonradiative trapping and relaxation of charge carriers, hot carrier cooling and luminescence, Auger-type charge-charge scattering, multiple excitons generation and recombination, charge and energy transfer between donor and acceptor materials, and charge recombination inside individual materials and across donor/acceptor interfaces. These phenomena are illustrated with representative materials and interfaces. Focus is placed on response to external perturbations, formation of point defects and their passivation, mixed stoichiometries, dopants, grain boundaries, and interfaces of MHPs with charge transport layers, and quantum confinement. In addition to bulk materials, perovskite quantum dots and 2D perovskites with different layer and spacer cation structures, edge passivation, and dielectric screening are discussed. The atomistic insights into excited state dynamics under realistic conditions provide the fundamental understanding needed for design of advanced solar energy and optoelectronic devices.

Doping-Induced Charge Localization Suppresses Electron-Hole Recombination in Copper Zinc Tin Sulfide: Quantum Dynamics Combined with Deep Neural Networks Analysis

Nonradiative electron-hole recombination constitutes a major route for charge and energy losses in copper zinc tin sulfide (CZTS) solar cells. Using a combination of nonadiabatic (NA) molecular dynamics and deep neural networks (DNN), we demonstrated that electron-hole recombination is notably retarded by doping with Ag and Ag+Cd. The replacement of lighter Cu and/or Zn with heavier Ag and/or Cd reduces the NA coupling by separating electron and hole wave functions. Such replacement suppresses atomic motions and makes the phonon modes move to low-frequency region, which reduces NA coupling further but inhibits decoherence. The small magnitudes of NA coupling beat the long coherence time, delaying the electron-hole recombination from the Ag+Cd-codoping to the Ag doping system compared with pristine CZTS. The NA couplings predicted by the DNN algorithm lead to the time scales in agreement with the direct simulations. The study provides a robust strategy to design high-performance CZTS solar cells.

Ab initio quantum dynamics of charge carriers in graphitic carbon nitride nanosheets

Graphitic carbon nitride (g-C₃N₄), a metal-free and visible light responsive photocatalyst, has garnered much attention due to its wide range of applications. In order to elucidate the role of dimensionality on the properties of photo-generated charge carriers, we apply nonadiabatic (NA) molecular dynamics combined with time-domain density functional theory to investigate nonradiative relaxation of hot electrons and holes, and electron-hole recombination in monolayer and bulk g-C₃N₄. The nonradiative charge recombination occurs on a nanosecond timescale and is faster in bulk than the nanosheet, in agreement with the experiment. The difference arises due to the smaller energy gap and participation of additional vibrations in the bulk system. The long carrier lifetimes are favored by small NA coupling and rapid phonon-induced loss of quantum coherence between the excited and ground electronic states. Decoherence is fast because g-C₃N₄ is soft and undergoes large scale vibrations. The NA coupling is small since electrons and holes are localized on different atoms, and the electron-hole overlap is relatively small. Phonon-driven relaxation of hot electrons and holes takes 100-200 fs and is slightly slower at higher initial energies due to participation of fewer vibrational modes. This feature of two-dimensional g-C₃N₄ contrasts traditional three-dimensional semiconductors, which exhibit faster relaxation at higher energies due to larger density of states, and can be used to extract hot carriers to perform useful functions. The ab initio quantum dynamics simulations present a comprehensive picture of the photo-induced charge carrier dynamics in g-C₃N₄, guiding design of photovoltaic and photocatalytic devices.