1
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Kuznetsova MS, Kolobkova EV, Bataev MN, Berdnikov VS, Pankin DV, Smirnov MB, Ubyivovk EV, Ignatiev IV. Synthesis and optical properties of perovskite nanocrystals in glass with cationic substitution. J Chem Phys 2024; 161:124501. [PMID: 39319651 DOI: 10.1063/5.0227459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2024] [Accepted: 09/08/2024] [Indexed: 09/26/2024] Open
Abstract
The effect of cadmium ions introduced into fluorophosphate glass on the growth and photoluminescence (PL) of the CsPb1-xCdxBr3 perovskite nanocrystals (NCs) is systematically studied. The x-ray diffraction patterns have shown that cadmium ions are really incorporated into the NCs that results in a decrease in the lattice constant from 5.85 (x = 0) to 5.75 Å (x = 0.45). At the large cadmium content in the glass (x > 0.38), simultaneous formation of the perovskite CsPb1-xCdxBr3 NCs and the non-luminescent CsCdBr3 NCs in the hexagonal phase is found. It is also found that the lattice contraction leads to an increase in the bandgap energy and a noticeable shift of the PL band to the blue region of the spectrum (from 2.42 to 2.68 eV) with a drop in quantum yield from 85% for CsPbBr3 NCs down to 4% for CsPb0.55Cd0.45Br3 NCs. It is shown that the PL quantum yield decreases due to the formation of deep trap states, which manifest themselves as a PL band in the energy range of 1.6-2.5 eV at cryogenic temperatures. A simple model explaining the behavior of the PL band as a function of temperature in the range from 30 to 300 K is proposed.
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Affiliation(s)
- Maria S Kuznetsova
- Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia
| | - Elena V Kolobkova
- ITMO University, 199034 St. Petersburg, Russia
- St. Petersburg State Institute of Technology, 190013 St. Petersburg, Russia
| | - Matvey N Bataev
- Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia
| | - Vladimir S Berdnikov
- Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia
| | - Dmitrii V Pankin
- Department of Solid State Physics, St. Petersburg State University, 198504 St. Petersburg, Russia
| | - Mikhail B Smirnov
- Department of Solid State Physics, St. Petersburg State University, 198504 St. Petersburg, Russia
| | - Evgenii V Ubyivovk
- St. Petersburg State University, 198504 St. Petersburg, Russia
- Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
| | - Ivan V Ignatiev
- Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia
- Department of Solid State Physics, St. Petersburg State University, 198504 St. Petersburg, Russia
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2
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Pun AB, Lyons AJ, Norris DJ. Silver-doped CdSe magic-sized nanocrystals. J Chem Phys 2024; 160:154711. [PMID: 38634492 DOI: 10.1063/5.0201417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Accepted: 03/29/2024] [Indexed: 04/19/2024] Open
Abstract
Magic-sized nanocrystals (MSNCs) grow via jumps between very specific sizes. This discrete growth is a possible avenue toward monodisperse nanomaterials that are completely identical in size and shape. In spite of this potential, MSNCs have seen limited study and application due to their poor optical properties. Specifically, MSNCs are limited in their range of emission wavelengths and commonly exhibit poor photoluminescence quantum yields (PLQYs). Here, we report silver doping of CdSe MSNCs as a strategy to improve the optical properties of MSNCs. Silver doping leads to controllable shifts in emission wavelength and significant increases in MSNC PLQYs. These results suggest that doped MSNCs are interesting candidates for displays or luminescent solar concentrators. Finally, we demonstrate that the doping process does not affect the magic size of our MSNCs, allowing further photophysical study of this class of nanomaterial.
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Affiliation(s)
- Andrew B Pun
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Alexandra J Lyons
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - David J Norris
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
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3
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Qin F, Lu M, Lu P, Sun S, Bai X, Zhang Y. Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance. SMALL METHODS 2023; 7:e2300434. [PMID: 37434048 DOI: 10.1002/smtd.202300434] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/17/2023] [Indexed: 07/13/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.
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Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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4
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Dehnel J, Harchol A, Barak Y, Meir I, Horani F, Shapiro A, Strassberg R, de Mello Donegá C, Demir HV, Gamelin DR, Sharma K, Lifshitz E. Optically detected magnetic resonance spectroscopic analyses on the role of magnetic ions in colloidal nanocrystals. J Chem Phys 2023; 159:071001. [PMID: 37581419 DOI: 10.1063/5.0160787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Accepted: 07/26/2023] [Indexed: 08/16/2023] Open
Abstract
Incorporating magnetic ions into semiconductor nanocrystals has emerged as a prominent research field for manipulating spin-related properties. The magnetic ions within the host semiconductor experience spin-exchange interactions with photogenerated carriers and are often involved in the recombination routes, stimulating special magneto-optical effects. The current account presents a comparative study, emphasizing the impact of engineering nanostructures and selecting magnetic ions in shaping carrier-magnetic ion interactions. Various host materials, including the II-VI group, halide perovskites, and I-III-VI2 in diverse structural configurations such as core/shell quantum dots, seeded nanorods, and nanoplatelets, incorporated with magnetic ions such as Mn2+, Ni2+, and Cu1+/2+ are highlighted. These materials have recently been investigated by us using state-of-the-art steady-state and transient optically detected magnetic resonance (ODMR) spectroscopy to explore individual spin-dynamics between the photogenerated carriers and magnetic ions and their dependence on morphology, location, crystal composition, and type of the magnetic ion. The information extracted from the analyses of the ODMR spectra in those studies exposes fundamental physical parameters, such as g-factors, exchange coupling constants, and hyperfine interactions, together providing insights into the nature of the carrier (electron, hole, dopant), its local surroundings (isotropic/anisotropic), and spin dynamics. The findings illuminate the importance of ODMR spectroscopy in advancing our understanding of the role of magnetic ions in semiconductor nanocrystals and offer valuable knowledge for designing magnetic materials intended for various spin-related technologies.
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Affiliation(s)
- Joanna Dehnel
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Adi Harchol
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Yahel Barak
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Itay Meir
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Faris Horani
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, USA
| | - Arthur Shapiro
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Rotem Strassberg
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Celso de Mello Donegá
- Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, 3584 CC Utrecht, The Netherlands
| | - Hilmi Volkan Demir
- Luminous Center of Excellence for Semiconductor Lighting and Displays, TPI, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University-NTU Singapore, 639798, Singapore
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Türkiye
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, USA
| | - Kusha Sharma
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - Efrat Lifshitz
- Schulich Faculty of Chemistry, Solid State Institute, Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel
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5
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Zhang M, Xiang G, Wu Y, Liu J, Leng J, Cheng C, Ma H. Influence of Sr doping on the photoelectronic properties of CsPbX 3 (X = Cl, Br, or I): a DFT investigation. Phys Chem Chem Phys 2023; 25:9592-9598. [PMID: 36942656 DOI: 10.1039/d2cp05867g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/09/2023]
Abstract
To broaden the application of cesium lead halide perovskites, doping technology has been widely proposed. In this study, we calculated a 12.5% concentration of a Sr-doped CsPbX3 (X = Cl, Br, or I) perovskite via density functional theory. The results showed that the bandgap energy of the perovskite increased by 0.2-0.3 eV. The high symmetry points of the energy band changed from R to Γ after Sr doping because the Sr doping affected the initial distribution of atomic orbital hybridization. In addition, optical absorption spectra after doping showed an obvious blueshift, whereas the absorption coefficient of CsPb0.875Sr0.125X3 had the same magnitude as undoped CsPbX3. Moreover, the effective masses of electrons and holes changed within a small range (0.01-0.03 m0) after Sr doping. According to the findings of this study, the CsPb0.875Sr0.125X3 perovskite is expected to become an ideal candidate material for designing photovoltaic and photoelectric devices.
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Affiliation(s)
- Man Zhang
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Guangbiao Xiang
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Yanwen Wu
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Jing Liu
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Jiancai Leng
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Chen Cheng
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Hong Ma
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
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6
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Ahmed G, Liu Y, Bravić I, Ng X, Heckelmann I, Narayanan P, Fernández MS, Monserrat B, Congreve DN, Feldmann S. Luminescence Enhancement Due to Symmetry Breaking in Doped Halide Perovskite Nanocrystals. J Am Chem Soc 2022; 144:15862-15870. [PMID: 35977424 PMCID: PMC9437917 DOI: 10.1021/jacs.2c07111] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Indexed: 12/27/2022]
Abstract
Metal-halide perovskite nanocrystals have demonstrated excellent optoelectronic properties for light-emitting applications. Isovalent doping with various metals (M2+) can be used to tailor and enhance their light emission. Although crucial to maximize performance, an understanding of the universal working mechanism for such doping is still missing. Here, we directly compare the optical properties of nanocrystals containing the most commonly employed dopants, fabricated under identical synthesis conditions. We show for the first time unambiguously, and supported by first-principles calculations and molecular orbital theory, that element-unspecific symmetry-breaking rather than element-specific electronic effects dominate these properties under device-relevant conditions. The impact of most dopants on the perovskite electronic structure is predominantly based on local lattice periodicity breaking and resulting charge carrier localization, leading to enhanced radiative recombination, while dopant-specific hybridization effects play a secondary role. Our results suggest specific guidelines for selecting a dopant to maximize the performance of perovskite emitters in the desired optoelectronic devices.
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Affiliation(s)
- Ghada
H. Ahmed
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Yun Liu
- Cavendish
Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
| | - Ivona Bravić
- Cavendish
Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
| | - Xejay Ng
- Cavendish
Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
| | - Ina Heckelmann
- Cavendish
Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
| | - Pournima Narayanan
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Martin S. Fernández
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Bartomeu Monserrat
- Cavendish
Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
- Department
of Materials Science and Metallurgy, University
of Cambridge, Cambridge CB30FS, U.K.
| | - Daniel N. Congreve
- Department
of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sascha Feldmann
- Cavendish
Laboratory, University of Cambridge, Cambridge CB30HE, U.K.
- Rowland
Institute, Harvard University, Cambridge, Massachusetts 02142, United States
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7
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Das S, Samanta A. On direct synthesis of high quality APbX 3 (A = Cs +, MA + and FA +; X = Cl -, Br - and I -) nanocrystals following a generic approach. NANOSCALE 2022; 14:9349-9358. [PMID: 35726794 DOI: 10.1039/d2nr01305c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Direct synthesis of APbX3 [A = Cs+, methylammonium (MA+) or formamidinium (FA+) and X = Cl-, Br- or I-] perovskite nanocrystals (NCs) following a generic approach is a challenging task even today. Motivated by our recent success in obtaining directly high-quality red/NIR-emitting APbI3 NCs employing 1,3-diiodo-5,5-dimethylhydantoin (DIDMH) as an iodide precursor, we explore here whether violet/green-emitting APbCl3 and APbBr3 NCs can also be obtained using the chloro- and bromo-analog of DIDMH keeping in mind that a positive outcome will provide the generic protocol for direct synthesis of all APbX3 NCs using similar halide precursors. It is shown that green-emitting APbBr3 NCs with near-unity PLQY and violet-emitting CsPbCl3 NCs with an impressive PLQY of ∼70%, mixed-halide NCs, CsPb(Cl/Br)3 and CsPb(Br/I)3, emitting in the blue and yellow-orange region with PLQYs of 87-95% and 68-98%, respectively can indeed be obtained employing the bromo- and chloro-analog of DIDMH. These NCs exhibit remarkable stability under different conditions including the polar environment. Femtosecond pump-probe studies show no ultrafast carrier trapping in these systems. The key elements of the halide precursors that facilitated the synthesis and the factors contributing to the excellent characteristics of the NCs are determined by careful analysis of the data. The results are of great significance because a direct method of obtaining highly luminescent and stable APbX3 NCs (except violet-emitting hybrid NCs) is eventually identified and the work provides valuable insight into the selection of appropriate halide precursors for the development of superior systems.
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Affiliation(s)
- Somnath Das
- School of Chemistry, University of Hyderabad, Hyderabad-500 046, India.
| | - Anunay Samanta
- School of Chemistry, University of Hyderabad, Hyderabad-500 046, India.
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8
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Tawil C, Kurdi RE, Patra D. Cesium Lead Bromide Perovskites: Synthesis, Stability, and Photoluminescence Quantum Yield Enhancement by Hexadecyltrimethylammonium Bromide Doping. ACS OMEGA 2022; 7:20872-20880. [PMID: 35755361 PMCID: PMC9219059 DOI: 10.1021/acsomega.2c01490] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/12/2022] [Accepted: 05/26/2022] [Indexed: 06/15/2023]
Abstract
Perovskite nanoparticles having a crystalline structure have attracted scientists' attention due to their great potential in optoelectronic and scintillation applications. The photoluminescence quantum yield (PLQY) is one of the main critical photophysical properties of the perovskite nanoparticles. Unfortunately, the main limitation of cesium lead halide perovskites is their instability in an ambient atmosphere, where they undergo a rapid chemical decomposition within time. For this purpose, hexadecyltrimethylammonium bromide (CTAB) was used as a surfactant dopant to test in the first place its effect on the stability of CsPbBr3 perovskites and on the PLQY values of the prepared perovskites. The addition of CTAB has proven its efficiency in the formed CsPbBr3 nanoparticles by increasing their thermal stability and by enhancing their PLQY up to 75%. These results were obtained after the successful preparation of CsPbBr3 perovskite nanoparticles by optimizing three different reaction parameters, starting from the time of the reaction, moving to the concentration of lead bromide, and ending with the concentration of cesium oleate. Therefore, it was found that the most stable CsPbBr3 perovskites were formed when mixing 0.15 g of lead bromide heated for 40 min with a volume of 1.2 mL of cesium oleate.
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9
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Cao J, Yin Z, Pang Q, Lu Y, Nong X, Zhang JZ. Modulating optical properties and interfacial electron transfer of CsPbBr 3 perovskite nanocrystals via indium ion and chlorine ion co-doping. J Chem Phys 2021; 155:234701. [PMID: 34937354 DOI: 10.1063/5.0076037] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022] Open
Abstract
In this work, we demonstrated an in situ approach for doping CsPbBr3 nanocrystals (NCs) with In3+ and Cl- with a ligand-assisted precipitation method at room temperature. The In3+ and Cl- co-doped NCs are characterized by the powder x-ray diffraction patterns, ultraviolet-visible, photoluminescence (PL) spectroscopy, time-resolved PL (TRPL), ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy. Based on PL and TRPL results, the non-radiative nature of In3+-doping induced localized impurity states is revealed. Furthermore, the impact of In3+ and Cl- doping on charge transfer (CT) from the NCs to molecular acceptors was investigated and the results indicate that the CT at the interface of NCs can be tuned and promoted by In3+ and Cl- co-doping. This enhanced CT is attributed to the enlarged energy difference between relevant states of the molecular acceptor and the NCs by In3+ and Cl- upon co-doping. This work provides insight into how to control interfacial CT in perovskite NCs, which is important for optoelectronic applications.
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Affiliation(s)
- Jianfei Cao
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, People's Republic of China
| | - Zuodong Yin
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, People's Republic of China
| | - Qi Pang
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, People's Republic of China
| | - Yuexi Lu
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, People's Republic of China
| | - Xiuqing Nong
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, People's Republic of China
| | - Jin Zhong Zhang
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, California 95064, USA
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10
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Chen Q, Cao S, Xing K, Ning M, Zeng R, Wang Y, Zhao J. Mg 2+-Assisted Passivation of Defects in CsPbI 3 Perovskite Nanocrystals for High-Efficiency Photoluminescence. J Phys Chem Lett 2021; 12:11090-11097. [PMID: 34752097 DOI: 10.1021/acs.jpclett.1c03258] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
CsPbI3 perovskite nanocrystals (NCs) are emerging as promising materials for optoelectronic devices because of their superior optical properties. However, the poor stability of CsPbI3 NCs has become a huge bottleneck for practical applications. Herein, we report an effective strategy of Mg2+-assisted passivation of surface defects to obtain high emission efficiency and stability in CsPbI3 NCs. It is found that the introduced Mg2+ ions are mainly distributed on the surface of NCs and then passivate the NC defects, enhancing radiative decay rate and reducing nonradiative decay rate. As a result, the as-prepared Mg2+-treated CsPbI3 (Mg-CsPbI3) NCs exhibit the highest photoluminescence quantum yield (PLQY) of 95%. The Mg-CsPbI3 NC colloidal solution retains 80% of its original PLQY after 80 days of atmosphere exposure. The red perovskite light-emitting diodes based on the Mg-CsPbI3 NCs demonstrate an external quantum efficiency of 8.4%, which shows an almost 4-fold improvement compared to the devices based on the untreated NCs.
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Affiliation(s)
- Qiuhong Chen
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Ke Xing
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Meijing Ning
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Ruosheng Zeng
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou 215123, China
| | - Jialong Zhao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
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11
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Biesold GM, Liang S, Brettmann B, Thadhani N, Kang Z, Lin Z. Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202008395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Gill M. Biesold
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Shuang Liang
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Blair Brettmann
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
- School of Chemical and Biomedical Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Naresh Thadhani
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Zhitao Kang
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
- Georgia Tech Research Institute Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Zhiqun Lin
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
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12
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Biesold GM, Liang S, Brettmann B, Thadhani N, Kang Z, Lin Z. Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures. Angew Chem Int Ed Engl 2021; 60:9772-9788. [PMID: 32621404 DOI: 10.1002/anie.202008395] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Indexed: 12/25/2022]
Abstract
Luminescent semiconductor nanocrystals are a fascinating class of materials because of their size-dependent emissions. Numerous past studies have demonstrated that semiconductor nanoparticles with radii smaller than their Bohr radius experience quantum confinement and thus size-dependent emissions. Exerting pressure on these nanoparticles represents an additional, more dynamic, strategy to alter their size and shift their emission. The application of pressure results in the lattices becoming strained and the electronic structure altered. In this Minireview, colloidal semiconductor nanocrystals are first introduced. The effects of uniform hydrostatic pressure on the optical properties of metal halide perovskite (ABX3 ), II-VI, III-V, and IV-VI semiconductor nanocrystals are then examined. The optical properties of semiconductor nanocrystals under static and dynamic anisotropic pressure are then summarized. Finally, future research directions and applications utilizing the pressure-dependent optical properties of semiconductor nanocrystals are discussed.
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Affiliation(s)
- Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Blair Brettmann
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA.,School of Chemical and Biomedical Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Naresh Thadhani
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Zhitao Kang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA.,Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
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Xiao P, Yu Y, Cheng J, Chen Y, Yuan S, Chen J, Yuan J, Liu B. Advances in Perovskite Light-Emitting Diodes Possessing Improved Lifetime. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E103. [PMID: 33406749 PMCID: PMC7823701 DOI: 10.3390/nano11010103] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 12/23/2020] [Accepted: 12/26/2020] [Indexed: 12/14/2022]
Abstract
Recently, perovskite light-emitting diodes (PeLEDs) are seeing an increasing academic and industrial interest with a potential for a broad range of technologies including display, lighting, and signaling. The maximum external quantum efficiency of PeLEDs can overtake 20% nowadays, however, the lifetime of PeLEDs is still far from the demand of practical applications. In this review, state-of-the-art concepts to improve the lifetime of PeLEDs are comprehensively summarized from the perspective of the design of perovskite emitting materials, the innovation of device engineering, the manipulation of optical effects, and the introduction of advanced encapsulations. First, the fundamental concepts determining the lifetime of PeLEDs are presented. Then, the strategies to improve the lifetime of both organic-inorganic hybrid and all-inorganic PeLEDs are highlighted. Particularly, the approaches to manage optical effects and encapsulations for the improved lifetime, which are negligibly studied in PeLEDs, are discussed based on the related concepts of organic LEDs and Cd-based quantum-dot LEDs, which is beneficial to insightfully understand the lifetime of PeLEDs. At last, the challenges and opportunities to further enhance the lifetime of PeLEDs are introduced.
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Affiliation(s)
- Peng Xiao
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Yicong Yu
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Junyang Cheng
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Yonglong Chen
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Shengjin Yuan
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Jianwen Chen
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Jian Yuan
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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14
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Affiliation(s)
- Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, New York 10027, USA
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15
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Luo D, Wang L, Qiu Y, Huang R, Liu B. Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1226. [PMID: 32599722 PMCID: PMC7353084 DOI: 10.3390/nano10061226] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Revised: 06/17/2020] [Accepted: 06/17/2020] [Indexed: 11/16/2022]
Abstract
In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.
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Affiliation(s)
- Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China;
| | - Lin Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;
| | - Ying Qiu
- Guangdong R&D Center for Technological Economy, Guangzhou 510000, China
| | - Runda Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
| | - Baiquan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Zhang BB, Chen JK, Ma JP, Jia XF, Zhao Q, Guo SQ, Chen YM, Liu Q, Kuroiwa Y, Moriyoshi C, Zhang J, Sun HT. Antithermal Quenching of Luminescence in Zero-Dimensional Hybrid Metal Halide Solids. J Phys Chem Lett 2020; 11:2902-2909. [PMID: 32212731 DOI: 10.1021/acs.jpclett.0c00293] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Zero-dimensional (0D) hybrid metal halides have emerged as a new generation of luminescent phosphors owing to their high radiative recombination rates, which, akin to their three-dimensional cousins, commonly demonstrate thermal quenching of luminescence. Here, we report on the finding of antithermal quenching of luminescence in 0D hybrid metal halides. Using (C9NH20)2SnBr4 single crystals as an example system, we show that 0D metal halides can demonstrate antithermal quenching of luminescence. A combination of experimental characterizations and first-principles calculations suggests that antithermal quenching of luminescence is associated with trap states introduced by structural defects in (C9NH20)2SnBr4. Importantly, we find that antithermal quenching of luminescence is not only limited to (C9NH20)2SnBr4 but also exists in other 0D metal halides. Our work highlights the important role of defects in impacting photophysical properties of hybrid metal halides and may stimulate new efforts to explore metal halides exhibiting antithermal quenching of luminescence at higher temperatures.
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Affiliation(s)
- Bin-Bin Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Jia-Kai Chen
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Ju-Ping Ma
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiao-Fang Jia
- Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing 100191, China
| | - Qing Zhao
- Department of Physical Science, Hiroshima University, Higashihiroshima, Hiroshima 739-8526, Japan
| | - Shao-Qiang Guo
- Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing 100191, China
| | - Ya-Meng Chen
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Qi Liu
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Yoshihiro Kuroiwa
- Department of Physical Science, Hiroshima University, Higashihiroshima, Hiroshima 739-8526, Japan
| | - Chikako Moriyoshi
- Department of Physical Science, Hiroshima University, Higashihiroshima, Hiroshima 739-8526, Japan
| | - Junying Zhang
- Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), School of Physics, Beihang University, Beijing 100191, China
| | - Hong-Tao Sun
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
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Ji S, Yuan X, Cao S, Ji W, Zhang H, Wang Y, Li H, Zhao J, Zou B. Near-Unity Red Mn 2+ Photoluminescence Quantum Yield of Doped CsPbCl 3 Nanocrystals with Cd Incorporation. J Phys Chem Lett 2020; 11:2142-2149. [PMID: 32108473 DOI: 10.1021/acs.jpclett.0c00372] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Although Mn2+ doping in semiconductor nanocrystals (NCs) has been studied for nearly three decades, the near 100% photoluminescence (PL) quantum yield (QY) of Mn2+ emission has never been realized so far. Herein, greatly improved PL QYs of Mn2+ emissions are reported in Mn2+-doped CsPbCl3 NCs with various Mn2+ doping concentrations after CdCl2 post-treatment at room temperature. Specifically, the near-unity QY and near single-exponential decay of red Mn2+ emission peaking at 627 nm in doped CsPbCl3 NCs are obtained for the first time. The temperature dependence of steady-state and time-resolved PL spectra reveals that the CdCl2 post-treatment significantly reduces the nonradiative defect states and enhances the energy transfer from host to Mn2+ ions. Moreover, the Mn2+:CsPbCl3 NCs after CdCl2 post-treatment exhibit robust stability and high PL QYs after multipurification. The results will provide an effective route to obtain doped perovskite NCs with high performance for white lighting emitting diodes.
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Affiliation(s)
- Sihang Ji
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
- Department of Physics, Jilin University, Changchun 130023, China
| | - Xi Yuan
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Sheng Cao
- Center on Nano-energy Research, School of Physical Science and Technology, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Wenyu Ji
- Department of Physics, Jilin University, Changchun 130023, China
| | - Hanzhuang Zhang
- Department of Physics, Jilin University, Changchun 130023, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou 215123, China
| | - Haibo Li
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Jialong Zhao
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
- Center on Nano-energy Research, School of Physical Science and Technology, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Bingsuo Zou
- Center on Nano-energy Research, School of Physical Science and Technology, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
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