Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5

As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) - phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline-amorphous-crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2- trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries.

Theoretical and Experimental Advances in High-Pressure Behaviors of Nanoparticles

Using compressive mechanical forces, such as pressure, to induce crystallographic phase transitions and mesostructural changes while modulating material properties in nanoparticles (NPs) is a unique way to discover new phase behaviors, create novel nanostructures, and study emerging properties that are difficult to achieve under conventional conditions. In recent decades, NPs of a plethora of chemical compositions, sizes, shapes, surface ligands, and self-assembled mesostructures have been studied under pressure by in-situ scattering and/or spectroscopy techniques. As a result, the fundamental knowledge of pressure-structure-property relationships has been significantly improved, leading to a better understanding of the design guidelines for nanomaterial synthesis. In the present review, we discuss experimental progress in NP high-pressure research conducted primarily over roughly the past four years on semiconductor NPs, metal and metal oxide NPs, and perovskite NPs. We focus on the pressure-induced behaviors of NPs at both the atomic- and mesoscales, inorganic NP property changes upon compression, and the structural and property transitions of perovskite NPs under pressure. We further discuss in depth progress on molecular modeling, including simulations of ligand behavior, phase-change chalcogenides, layered transition metal dichalcogenides, boron nitride, and inorganic and hybrid organic-inorganic perovskites NPs. These models now provide both mechanistic explanations of experimental observations and predictive guidelines for future experimental design. We conclude with a summary and our insights on future directions for exploration of nanomaterial phase transition, coupling, growth, and nanoelectronic and photonic properties.

Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures

Experiments investigating magnetic-field-tuned superconductor-insulator transition (HSIT) mostly focus on two-dimensional material systems where the transition and its proximate ground-state phases, often exhibit features that are seemingly at odds with the expected behavior. Here we present a complementary study of a three-dimensional pressure-packed amorphous indium-oxide (InOx) powder where granularity controls the HSIT. Above a low threshold pressure of ∼0.2 GPa, vestiges of superconductivity are detected, although neither a true superconducting transition nor insulating behavior are observed. Instead, a saturation at very high resistivity at low pressure is followed by saturation at very low resistivity at higher pressure. We identify both as different manifestations of anomalous metallic phases dominated by superconducting fluctuations. By analogy with previous identification of the low resistance saturation as a 'failed superconductor', our data suggests that the very high resistance saturation is a manifestation of a 'failed insulator'. Above a threshold pressure of ∼6 GPa, the sample becomes fully packed, and superconductivity is robust, withT_Ctunable with pressure. A quantum critical point atP_C∼ 25 GPa marks the complete suppression of superconductivity. For a finite pressure belowP_C, a magnetic field is shown to induce a HSIT from a true zero-resistance superconducting state to a weakly insulating behavior. Determining the critical field,H_C, we show that similar to the 2D behavior, the insulating-like state maintains a superconducting character, which is quenched at higher field, above which the magnetoresistance decreases to its fermionic normal state value.

Pressure effects on the metallization and dielectric properties of GaP

In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.

Superconducting Phase Induced by a Local Structure Transition in Amorphous Sb_{2}Se_{3} under High Pressure

Superconductivity and Anderson localization represent two extreme cases of electronic behavior in solids. Surprisingly, these two competing scenarios can occur in the same quantum system, e.g., in an amorphous superconductor. Although the disorder-driven quantum phase transition has attracted much attention, its structural origins remain elusive. Here, we discovered an unambiguous correlation between superconductivity and density in amorphous Sb_{2}Se_{3} at high pressure. Superconductivity first emerges in the high-density amorphous (HDA) phase at about 24 GPa, where the density of glass unexpectedly exceeds its crystalline counterpart, and then shows an enhanced critical temperature when pressure induces crystallization at 51 GPa. Ab initio simulations reveal that the bcc-like local geometry motifs form in the HDA phase, arising from distinct "metavalent bonds." Our results demonstrate that HDA phase is critical for the incipient superconductive behavior.

Colossal Density-Driven Resistance Response in the Negative Charge Transfer Insulator MnS_{2}

A reversible density driven insulator to metal to insulator transition in high-spin MnS_{2} is experimentally observed, leading with a colossal electrical resistance drop of 10^{8}  Ω by 12 GPa. Density functional theory simulations reveal the metallization to be unexpectedly driven by previously unoccupied S_{2}^{2-} σ_{3p}^{*} antibonding states crossing the Fermi level. This is a unique variant of the charge transfer insulator to metal transition for negative charge transfer insulators having anions with an unsaturated valence. By 36 GPa the emergence of the low-spin insulating arsenopyrite (P2_{1}/c) is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.

Pressure-induced superconductivity in SnSb2Te4

Here we firstly report the pressure-induced superconductivity in phase change materials SnSb₂Te₄. Single crystals of SnSb₂Te₄ were grown using a conventional melting-down method. The resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The temperature dependence of the resistance under different pressures has been measured up to 32.6 GPa. The superconducting transition of SnSb₂Te₄ appeared at 2.1 K ([Formula: see text]) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4 K under 32.6 GPa.

Optical Properties and Local Structure Evolution during Crystallization of Ga16Sb84 Alloy

Phase-change memory is one of the most promising candidates for future memory technologies. However, most of the phase-change memories are based on chalcogenides, while other families of materials for this purpose remain insufficiently studied. In this work, we investigate the optical properties and microstructure of Ga16Sb84 by an in-situ ellipsometer and X-ray diffraction. Our experimental results reveal that the Ga16Sb84 films exhibit a relatively high crystallization temperature of ~250 °C, excelling in long data retention. In addition, a large optical contrast exists between the amorphous and crystalline states, which may make it suitable for use in optical discs. Molecular dynamics simulations indicate that a unique local structure order in the amorphous and crystalline phases is responsible for the optical properties observed in the experiment. The similarity found in the short-range orders of the amorphous and crystalline phases is beneficial to better understanding the fast phase transition of phase-change memory.

A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

Pressure-Induced Phase Transitions in GeTe-Rich Ge-Sb-Te Alloys across the Rhombohedral-to-Cubic Transitions

We demonstrate that pressure-induced amorphization in Ge-Sb-Te alloys across the ferroelectric-paraelectric transition can be represented as a mixture of coherently distorted rhombohedral Ge₈Sb₂Te₁₁ and randomly distorted cubic Ge₄Sb₂Te₇ and high-temperature Ge₈Sb₂Te₁₁ phases. While coherent distortion in Ge₈Sb₂Te₁₁ does not prevent the crystalline state from collapsing into its amorphous counterpart in a similar manner to pure GeTe, the pressure-amorphized Ge₈Sb₂Te₁₁ phase begins to revert to the crystalline cubic phase at ∼9 GPa in contrast to Ge₄Sb₂Te₇, which remains amorphous under ambient conditions when gradually decompressed from 40 GPa. Moreover, experimentally, it was observed that pressure-induced amorphization in Ge₈Sb₂Te₁₁ is a temperature-dependent process. Ge₈Sb₂Te₁₁ transforms into the amorphous phase at ∼27.5 and 25.2 GPa at room temperature and 408 K, respectively, and completely amorphizes at 32 GPa at 408 K, while some crystalline texture could be seen until 38 GPa (the last measurement point) at room temperature. To understand the origins of the temperature dependence of the pressure-induced amorphization process, density functional theory calculations were performed for compositions along the (GeTe)_x - (Sb₂Te₃)_1-x tie line under large hydrostatic pressures. The calculated results agreed well with the experimental data.

Disorder Control in Crystalline GeSb2Te4 Using High Pressure

Electronic phase-change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase-change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning the atomic disorder in the crystalline phase with heat treatment, because the disorder can lead to the localization of the electronic states and, thus, hamper the electron transport. The goal of this work is to achieve and explore multiple disordered configurations in PCMs by applying high pressure. Large-scale ab initio molecular dynamics simulations demonstrate that pressure can lower the energy barrier for the antisite migration in crystalline PCMs. The accumulation of these antisite atoms largely increases the compositional disorder, adding localized electronic states near the conduction band. The disorder-induced electron localization triggered by pressure is a novel way to modulate the properties of materials. Furthermore, the random distortion of the lattice induced by the compositional disorder provides a new mechanism that contributes to the amorphization of crystalline PCMs at high pressure.

Phase-change-induced martensitic deformation and slip system in GeSbTe

Phase-change stress induced martensitic deformation on GeSbTe.

Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires

Nanowires offer a unique approach for the bottom up assembly of electronic and photonic devices with the potential of integrating photonics with existing technologies. The anisotropic geometry and mesoscopic length scales of nanowires also make them very interesting systems to study a variety of size-dependent phenomenon where finite size effects become important. We will discuss the intriguing size-dependent properties of nanowire systems with diameters in the 5 - 300 nm range, where finite size and interfacial phenomena become more important than quantum mechanical effects. The ability to synthesize and manipulate nanostructures by chemical methods allows tremendous versatility in creating new systems with well controlled geometries, dimensions and functionality, which can then be used for understanding novel processes in finite-sized systems and devices.