1
|
Zhao Y, Ying T, Zhao L, Wu J, Pei C, Chen J, Deng J, Zhang Q, Gu L, Wang Q, Cao W, Li C, Zhu S, Zhang M, Yu N, Zhang L, Chen Y, Chen CZ, Yu T, Qi Y. Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In 2Te 5. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401118. [PMID: 38641859 DOI: 10.1002/adma.202401118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 03/20/2024] [Indexed: 04/21/2024]
Abstract
As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) - phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline-amorphous-crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2- trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries.
Collapse
Affiliation(s)
- Yi Zhao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Tianping Ying
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lingxiao Zhao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Juefei Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Cuiying Pei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Jing Chen
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jun Deng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinghua Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qi Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
| | - Weizheng Cao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Changhua Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Shihao Zhu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Mingxin Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Na Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lili Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201203, China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
- Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Chui-Zhen Chen
- Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Tongxu Yu
- Suzhou Laboratory, Suzhou, Jiangsu, 215123, China
| | - Yanpeng Qi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
- Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China
| |
Collapse
|
2
|
Meng L, Vu TV, Criscenti LJ, Ho TA, Qin Y, Fan H. Theoretical and Experimental Advances in High-Pressure Behaviors of Nanoparticles. Chem Rev 2023; 123:10206-10257. [PMID: 37523660 DOI: 10.1021/acs.chemrev.3c00169] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Using compressive mechanical forces, such as pressure, to induce crystallographic phase transitions and mesostructural changes while modulating material properties in nanoparticles (NPs) is a unique way to discover new phase behaviors, create novel nanostructures, and study emerging properties that are difficult to achieve under conventional conditions. In recent decades, NPs of a plethora of chemical compositions, sizes, shapes, surface ligands, and self-assembled mesostructures have been studied under pressure by in-situ scattering and/or spectroscopy techniques. As a result, the fundamental knowledge of pressure-structure-property relationships has been significantly improved, leading to a better understanding of the design guidelines for nanomaterial synthesis. In the present review, we discuss experimental progress in NP high-pressure research conducted primarily over roughly the past four years on semiconductor NPs, metal and metal oxide NPs, and perovskite NPs. We focus on the pressure-induced behaviors of NPs at both the atomic- and mesoscales, inorganic NP property changes upon compression, and the structural and property transitions of perovskite NPs under pressure. We further discuss in depth progress on molecular modeling, including simulations of ligand behavior, phase-change chalcogenides, layered transition metal dichalcogenides, boron nitride, and inorganic and hybrid organic-inorganic perovskites NPs. These models now provide both mechanistic explanations of experimental observations and predictive guidelines for future experimental design. We conclude with a summary and our insights on future directions for exploration of nanomaterial phase transition, coupling, growth, and nanoelectronic and photonic properties.
Collapse
Affiliation(s)
- Lingyao Meng
- Department of Chemistry & Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87106, United States
| | - Tuan V Vu
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Louise J Criscenti
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Tuan A Ho
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Yang Qin
- Department of Chemical & Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Mansfield, Connecticut 06269, United States
| | - Hongyou Fan
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| |
Collapse
|
3
|
Hen B, Shelukhin V, Greenberg E, Rozenberg GK, Kapitulnik A, Palevski A. Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:135402. [PMID: 34991085 DOI: 10.1088/1361-648x/ac48bf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Accepted: 01/06/2022] [Indexed: 06/14/2023]
Abstract
Experiments investigating magnetic-field-tuned superconductor-insulator transition (HSIT) mostly focus on two-dimensional material systems where the transition and its proximate ground-state phases, often exhibit features that are seemingly at odds with the expected behavior. Here we present a complementary study of a three-dimensional pressure-packed amorphous indium-oxide (InOx) powder where granularity controls the HSIT. Above a low threshold pressure of ∼0.2 GPa, vestiges of superconductivity are detected, although neither a true superconducting transition nor insulating behavior are observed. Instead, a saturation at very high resistivity at low pressure is followed by saturation at very low resistivity at higher pressure. We identify both as different manifestations of anomalous metallic phases dominated by superconducting fluctuations. By analogy with previous identification of the low resistance saturation as a 'failed superconductor', our data suggests that the very high resistance saturation is a manifestation of a 'failed insulator'. Above a threshold pressure of ∼6 GPa, the sample becomes fully packed, and superconductivity is robust, withTCtunable with pressure. A quantum critical point atPC∼ 25 GPa marks the complete suppression of superconductivity. For a finite pressure belowPC, a magnetic field is shown to induce a HSIT from a true zero-resistance superconducting state to a weakly insulating behavior. Determining the critical field,HC, we show that similar to the 2D behavior, the insulating-like state maintains a superconducting character, which is quenched at higher field, above which the magnetoresistance decreases to its fermionic normal state value.
Collapse
Affiliation(s)
- Bar Hen
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
| | - Victor Shelukhin
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
| | - Eran Greenberg
- Center for Advanced Radiation Sources, University of Chicago, Chicago, IL 60637, United States of America
| | - Gregory Kh Rozenberg
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
| | - Aharon Kapitulnik
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, United States of America
- Department of Applied Physics, Stanford University, Stanford, CA 94305, United States of America
- Department of Physics, Stanford University, Stanford, CA 94305, United States of America
| | - Alexander Palevski
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
| |
Collapse
|
4
|
Liu H, Wang J, Zhang G, Han Y, Wu B, Gao C. Pressure effects on the metallization and dielectric properties of GaP. Phys Chem Chem Phys 2021; 23:26829-26836. [PMID: 34817490 DOI: 10.1039/d1cp03889c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.
Collapse
Affiliation(s)
- Hao Liu
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China.
| | - Jia Wang
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University, Changchun 130052, China
| | - Guozhao Zhang
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China
| | - Yonghao Han
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China.
| | - Baojia Wu
- Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China.
| | - Chunxiao Gao
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China.
| |
Collapse
|
5
|
Zhang K, Xu M, Li N, Xu M, Zhang Q, Greenberg E, Prakapenka VB, Chen YS, Wuttig M, Mao HK, Yang W. Superconducting Phase Induced by a Local Structure Transition in Amorphous Sb_{2}Se_{3} under High Pressure. PHYSICAL REVIEW LETTERS 2021; 127:127002. [PMID: 34597067 DOI: 10.1103/physrevlett.127.127002] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2021] [Revised: 07/05/2021] [Accepted: 08/13/2021] [Indexed: 06/13/2023]
Abstract
Superconductivity and Anderson localization represent two extreme cases of electronic behavior in solids. Surprisingly, these two competing scenarios can occur in the same quantum system, e.g., in an amorphous superconductor. Although the disorder-driven quantum phase transition has attracted much attention, its structural origins remain elusive. Here, we discovered an unambiguous correlation between superconductivity and density in amorphous Sb_{2}Se_{3} at high pressure. Superconductivity first emerges in the high-density amorphous (HDA) phase at about 24 GPa, where the density of glass unexpectedly exceeds its crystalline counterpart, and then shows an enhanced critical temperature when pressure induces crystallization at 51 GPa. Ab initio simulations reveal that the bcc-like local geometry motifs form in the HDA phase, arising from distinct "metavalent bonds." Our results demonstrate that HDA phase is critical for the incipient superconductive behavior.
Collapse
Affiliation(s)
- Kai Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Ming Xu
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Nana Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Meng Xu
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Qian Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Eran Greenberg
- Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois, USA
| | - Vitali B Prakapenka
- Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois, USA
| | - Yu-Sheng Chen
- NSF's ChemMatCARS, University of Chicago, Chicago, Illinois 60637, USA
| | - Matthias Wuttig
- Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
| | - Ho-Kwang Mao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| |
Collapse
|
6
|
Durkee D, Dasenbrock-Gammon N, Smith GA, Snider E, Smith D, Childs C, Kimber SAJ, Lawler KV, Dias RP, Salamat A. Colossal Density-Driven Resistance Response in the Negative Charge Transfer Insulator MnS_{2}. PHYSICAL REVIEW LETTERS 2021; 127:016401. [PMID: 34270285 DOI: 10.1103/physrevlett.127.016401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 04/08/2021] [Accepted: 06/04/2021] [Indexed: 06/13/2023]
Abstract
A reversible density driven insulator to metal to insulator transition in high-spin MnS_{2} is experimentally observed, leading with a colossal electrical resistance drop of 10^{8} Ω by 12 GPa. Density functional theory simulations reveal the metallization to be unexpectedly driven by previously unoccupied S_{2}^{2-} σ_{3p}^{*} antibonding states crossing the Fermi level. This is a unique variant of the charge transfer insulator to metal transition for negative charge transfer insulators having anions with an unsaturated valence. By 36 GPa the emergence of the low-spin insulating arsenopyrite (P2_{1}/c) is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.
Collapse
Affiliation(s)
- Dylan Durkee
- Department of Physics & Astronomy, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
| | | | - G Alexander Smith
- Department of Chemistry & Biochemistry, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
| | - Elliot Snider
- Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627, USA
| | - Dean Smith
- Department of Physics & Astronomy, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
- HPCAT, X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Christian Childs
- Department of Physics & Astronomy, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
| | - Simon A J Kimber
- Université Bourgogne Franche-Comté, Université de Bourgogne, ICB-Laboratoire Interdisciplinaire Carnot de Bourgogne, Bâtiment Sciences Mirande, 9 Avenue Alain Savary, B-P. 47870, 21078 Dijon Cedex, France
| | - Keith V Lawler
- Department of Chemistry & Biochemistry, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
| | - Ranga P Dias
- Department of Physics & Astronomy, University of Rochester, Rochester, New York 14627, USA
- Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627, USA
| | - Ashkan Salamat
- Department of Physics & Astronomy, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
| |
Collapse
|
7
|
Song P, Matsumoto R, Hou Z, Adachi S, Hara H, Saito Y, Castro PB, Takeya H, Takano Y. Pressure-induced superconductivity in SnSb 2Te 4. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:235901. [PMID: 32066132 DOI: 10.1088/1361-648x/ab76e2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Here we firstly report the pressure-induced superconductivity in phase change materials SnSb2Te4. Single crystals of SnSb2Te4 were grown using a conventional melting-down method. The resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The temperature dependence of the resistance under different pressures has been measured up to 32.6 GPa. The superconducting transition of SnSb2Te4 appeared at 2.1 K ([Formula: see text]) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4 K under 32.6 GPa.
Collapse
Affiliation(s)
- Peng Song
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan
| | | | | | | | | | | | | | | | | |
Collapse
|
8
|
Dong F, Guo YR, Qiao C, Wang JJ, Shen H, Su WS, Zheng YX, Zhang RJ, Chen LY, Wang SY, Miao XS, Xu M. Optical Properties and Local Structure Evolution during Crystallization of Ga 16Sb 84 Alloy. Sci Rep 2018; 8:9605. [PMID: 29941896 PMCID: PMC6018500 DOI: 10.1038/s41598-018-27972-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2018] [Accepted: 06/07/2018] [Indexed: 11/29/2022] Open
Abstract
Phase-change memory is one of the most promising candidates for future memory technologies. However, most of the phase-change memories are based on chalcogenides, while other families of materials for this purpose remain insufficiently studied. In this work, we investigate the optical properties and microstructure of Ga16Sb84 by an in-situ ellipsometer and X-ray diffraction. Our experimental results reveal that the Ga16Sb84 films exhibit a relatively high crystallization temperature of ~250 °C, excelling in long data retention. In addition, a large optical contrast exists between the amorphous and crystalline states, which may make it suitable for use in optical discs. Molecular dynamics simulations indicate that a unique local structure order in the amorphous and crystalline phases is responsible for the optical properties observed in the experiment. The similarity found in the short-range orders of the amorphous and crystalline phases is beneficial to better understanding the fast phase transition of phase-change memory.
Collapse
Affiliation(s)
- F Dong
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Y R Guo
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - C Qiao
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - J J Wang
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - H Shen
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - W S Su
- National Taiwan Science Education Center, Taipei 11165, Taiwan and Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
- National Chip Implementation Center, Hsinchu, 30078, Taiwan
| | - Y X Zheng
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - R J Zhang
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - L Y Chen
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China
| | - S Y Wang
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China.
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Shanghai, 200433, China.
| | - X S Miao
- School of Optical & Electronic Information, Huazhong University of Science & Technology, Wuhan, 430074, China
| | - M Xu
- School of Optical & Electronic Information, Huazhong University of Science & Technology, Wuhan, 430074, China.
| |
Collapse
|
9
|
Wang JJ, Xu YZ, Mazzarello R, Wuttig M, Zhang W. A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials. MATERIALS 2017; 10:ma10080862. [PMID: 28773222 PMCID: PMC5578228 DOI: 10.3390/ma10080862] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2017] [Revised: 07/23/2017] [Accepted: 07/25/2017] [Indexed: 12/14/2022]
Abstract
Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.
Collapse
Affiliation(s)
- Jiang-Jing Wang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Ya-Zhi Xu
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Riccardo Mazzarello
- Institute for Theoretical Solid-State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, 52074 Aachen, Germany.
| | - Matthias Wuttig
- Institute of Physics IA, JARA-FIT and JARA-HPC, RWTH Aachen University, 52074 Aachen, Germany.
| | - Wei Zhang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| |
Collapse
|
10
|
Krbal M, Bartak J, Kolar J, Prytuliak A, Kolobov AV, Fons P, Bezacier L, Hanfland M, Tominaga J. Pressure-Induced Phase Transitions in GeTe-Rich Ge-Sb-Te Alloys across the Rhombohedral-to-Cubic Transitions. Inorg Chem 2017; 56:7687-7693. [PMID: 28654250 DOI: 10.1021/acs.inorgchem.7b00163] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
We demonstrate that pressure-induced amorphization in Ge-Sb-Te alloys across the ferroelectric-paraelectric transition can be represented as a mixture of coherently distorted rhombohedral Ge8Sb2Te11 and randomly distorted cubic Ge4Sb2Te7 and high-temperature Ge8Sb2Te11 phases. While coherent distortion in Ge8Sb2Te11 does not prevent the crystalline state from collapsing into its amorphous counterpart in a similar manner to pure GeTe, the pressure-amorphized Ge8Sb2Te11 phase begins to revert to the crystalline cubic phase at ∼9 GPa in contrast to Ge4Sb2Te7, which remains amorphous under ambient conditions when gradually decompressed from 40 GPa. Moreover, experimentally, it was observed that pressure-induced amorphization in Ge8Sb2Te11 is a temperature-dependent process. Ge8Sb2Te11 transforms into the amorphous phase at ∼27.5 and 25.2 GPa at room temperature and 408 K, respectively, and completely amorphizes at 32 GPa at 408 K, while some crystalline texture could be seen until 38 GPa (the last measurement point) at room temperature. To understand the origins of the temperature dependence of the pressure-induced amorphization process, density functional theory calculations were performed for compositions along the (GeTe)x - (Sb2Te3)1-x tie line under large hydrostatic pressures. The calculated results agreed well with the experimental data.
Collapse
Affiliation(s)
- Milos Krbal
- Faculty of Chemical Technology, Center of Materials and Nanotechnologies, University of Pardubice , Legions Square 565, 530 02 Pardubice, Czech Republic
| | | | | | | | - Alexander V Kolobov
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi , Tsukuba 305-8562, Ibaraki Japan
| | - Paul Fons
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi , Tsukuba 305-8562, Ibaraki Japan
| | - Lucile Bezacier
- European Synchrotron Radiation Facility , 6 rue Jules Horowitz, Boîte Postale 220, F38043 Grenoble, France
| | - Michael Hanfland
- European Synchrotron Radiation Facility , 6 rue Jules Horowitz, Boîte Postale 220, F38043 Grenoble, France
| | - Junji Tominaga
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi , Tsukuba 305-8562, Ibaraki Japan
| |
Collapse
|
11
|
Xu M, Zhang W, Mazzarello R, Wuttig M. Disorder Control in Crystalline GeSb 2Te 4 Using High Pressure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2015; 2:1500117. [PMID: 27708999 PMCID: PMC5034799 DOI: 10.1002/advs.201500117] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2015] [Revised: 05/15/2015] [Indexed: 06/06/2023]
Abstract
Electronic phase-change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase-change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning the atomic disorder in the crystalline phase with heat treatment, because the disorder can lead to the localization of the electronic states and, thus, hamper the electron transport. The goal of this work is to achieve and explore multiple disordered configurations in PCMs by applying high pressure. Large-scale ab initio molecular dynamics simulations demonstrate that pressure can lower the energy barrier for the antisite migration in crystalline PCMs. The accumulation of these antisite atoms largely increases the compositional disorder, adding localized electronic states near the conduction band. The disorder-induced electron localization triggered by pressure is a novel way to modulate the properties of materials. Furthermore, the random distortion of the lattice induced by the compositional disorder provides a new mechanism that contributes to the amorphization of crystalline PCMs at high pressure.
Collapse
Affiliation(s)
- Ming Xu
- Institute of Physics (IA) RWTH Aachen University Aachen 52074 Germany
| | - Wei Zhang
- Institute of Physics (IA) RWTH Aachen University Aachen 52074 Germany
| | - Riccardo Mazzarello
- Institute for Theoretical Solid State Physics RWTH Aachen University Aachen 52074 Germany
| | - Matthias Wuttig
- Institute of Physics (IA) RWTH Aachen University Aachen 52074 Germany; JARA-FIT and JARA-HPC RWTH Aachen University Aachen 52056 Germany
| |
Collapse
|
12
|
Jang MH, Jeong KS, Park SJ, Park SJ, Cho MH, Song JY. Phase-change-induced martensitic deformation and slip system in GeSbTe. RSC Adv 2015. [DOI: 10.1039/c4ra16946h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Phase-change stress induced martensitic deformation on GeSbTe.
Collapse
Affiliation(s)
- Moon Hyung Jang
- Institute of Physics and Applied Physics
- Yonsei University
- Seoul
- Republic of Korea
| | - Kwang Sik Jeong
- Institute of Physics and Applied Physics
- Yonsei University
- Seoul
- Republic of Korea
| | - Seung Jong Park
- Institute of Physics and Applied Physics
- Yonsei University
- Seoul
- Republic of Korea
| | - Sung Jin Park
- Institute of Physics and Applied Physics
- Yonsei University
- Seoul
- Republic of Korea
| | - Mann-Ho Cho
- Institute of Physics and Applied Physics
- Yonsei University
- Seoul
- Republic of Korea
| | - Jae Yong Song
- Center for Nanocharacterization
- Korea Research Institute of Standards and Science
- Daejeon
- Republic of Korea
| |
Collapse
|
13
|
Piccione B, Agarwal R, Jung Y, Agarwal R. Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires. PHILOSOPHICAL MAGAZINE (ABINGDON, ENGLAND) 2013; 93:2089-2121. [PMID: 23997656 PMCID: PMC3755783 DOI: 10.1080/14786435.2013.765981] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Nanowires offer a unique approach for the bottom up assembly of electronic and photonic devices with the potential of integrating photonics with existing technologies. The anisotropic geometry and mesoscopic length scales of nanowires also make them very interesting systems to study a variety of size-dependent phenomenon where finite size effects become important. We will discuss the intriguing size-dependent properties of nanowire systems with diameters in the 5 - 300 nm range, where finite size and interfacial phenomena become more important than quantum mechanical effects. The ability to synthesize and manipulate nanostructures by chemical methods allows tremendous versatility in creating new systems with well controlled geometries, dimensions and functionality, which can then be used for understanding novel processes in finite-sized systems and devices.
Collapse
Affiliation(s)
- Brian Piccione
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, U.S.A
| | - Rahul Agarwal
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, U.S.A
| | - Yeonwoong Jung
- Department of Electrical Engineering, Yale University, New Haven, CT, U.S.A
| | - Ritesh Agarwal
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, U.S.A
| |
Collapse
|