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Yang L, Hussein MI. Vibronics of multi-material nanopillared membranes and impact on the thermal conductivity. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:505303. [PMID: 39102857 DOI: 10.1088/1361-648x/ad6b6c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Accepted: 08/05/2024] [Indexed: 08/07/2024]
Abstract
Atomic motion in nanopillars standing on the surface of a silicon membrane generates vibrons, which are wavenumber-independent phonons that act as local resonances. These vibrons couple with the vast majority of the phonon population, including heat-carrying phonons, traveling along the base membrane causing a reduction in the in-plane lattice thermal conductivity. In this work, we examine isolated silicon and gallium nitride nanopillars and for each compare the vibrons density of states (DOS) to those of phonons in an isolated version of the silicon membrane. We show that while the conformity of the phonon-vibron DOS distribution between the two components across the full spectrum is a key factor in reducing the thermal conductivity of the assembled nanostructure, the presence of an intense vibron population at more dominant low frequencies plays a competing role. We report predictions from molecular dynamics simulations showing lower thermal conductivities for a silicon membrane with gallium-nitride nanopillars compared to a silicon membrane with silicon nanopillars.
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Affiliation(s)
- Lina Yang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Mahmoud I Hussein
- Smead Department of Aerospace Engineering Sciences, University of Colorado Boulder, Boulder, CO 80303, United States of America
- Department of Physics, University of Colorado Boulder, Boulder, CO 80302, United States of America
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2
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Quan Y, Liao B. Electron Drag Effect on Thermal Conductivity in Two-Dimensional Semiconductors. NANO LETTERS 2024; 24:8143-8150. [PMID: 38889312 DOI: 10.1021/acs.nanolett.4c02097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although the thermal conductivity of 2D materials has been extensively studied, interactions between nonequilibrium electrons and phonons, which can be strong when high electric fields and heat current coexist, are not considered. In this work, we systematically study the electron drag effect, where nonequilibrium electrons impart momenta to phonons and influence the thermal conductivity, in 2D semiconductors using ab initio simulations. We find that, at room temperature, electron drag can significantly increase thermal conductivity by decreasing phonon-electron scattering in 2D semiconductors while its impact in three-dimensional semiconductors is negligible. We attribute this difference to the large electron-phonon scattering phase space and larger contribution to thermal conductivity by drag-active phonons. Our work elucidates the fundamental physics underlying coupled electron-phonon transport in materials of various dimensionalities.
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Affiliation(s)
- Yujie Quan
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, United States
| | - Bolin Liao
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, United States
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3
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Ouyang W, Lygo AC, Chen Y, Zheng H, Vu D, Wooten BL, Liang X, Heremans JP, Stemmer S, Liao B. Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined Cd 3As 2 Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311644. [PMID: 38684220 DOI: 10.1002/adma.202311644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 03/23/2024] [Indexed: 05/02/2024]
Abstract
Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. This work systematically examines thermoelectric transport in a series of topological Dirac semimetal Cd3As2 thin films grown by molecular beam epitaxy. Surprisingly, significantly enhanced Seebeck effect and anomalous Nernst effect are found at cryogenic temperatures when the Cd3As2 layer is thin. In particular, a peak Seebeck coefficient of nearly 500 µV K-1 and a corresponding thermoelectric power factor over 30 mW K-2 m-1 are observed at 5 K in a 25-nm-thick sample. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modeling, and first-principles simulation, the contributions from bulk and surface conducting channels are isolated and the unusual thermoelectric properties are attributed to the topological surface states. The analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures.
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Affiliation(s)
- Wenkai Ouyang
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Alexander C Lygo
- Materials Department, University of California, Santa Barbara, CA, 93106, USA
| | - Yubi Chen
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Huiyuan Zheng
- Department of Physics, University of Hong Kong, Hong Kong, 999077, China
| | - Dung Vu
- Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, OH, 43210, USA
| | - Brandi L Wooten
- Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, OH, 43210, USA
| | - Xichen Liang
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Joseph P Heremans
- Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, OH, 43210, USA
| | - Susanne Stemmer
- Materials Department, University of California, Santa Barbara, CA, 93106, USA
| | - Bolin Liao
- Department of Mechanical Engineering, University of California, Santa Barbara, CA, 93106, USA
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4
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Lihm JM, Park CH. Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons. PHYSICAL REVIEW LETTERS 2024; 132:106402. [PMID: 38518315 DOI: 10.1103/physrevlett.132.106402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/07/2023] [Accepted: 01/09/2024] [Indexed: 03/24/2024]
Abstract
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.
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Affiliation(s)
- Jae-Mo Lihm
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
| | - Cheol-Hwan Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
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5
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Hase M, Tanisawa D, Kohashi K, Kamemura R, Miyake S, Takashiri M. Determination of Seebeck coefficient originating from phonon-drag effect using Si single crystals at different carrier densities. Sci Rep 2023; 13:13463. [PMID: 37596333 PMCID: PMC10439221 DOI: 10.1038/s41598-023-40685-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Accepted: 08/16/2023] [Indexed: 08/20/2023] Open
Abstract
The phonon-drag effect is useful for improving the thermoelectric performance, especially the Seebeck coefficient. Therefore, the phonon and electron transport properties of Si single crystals at different carrier densities were investigated, and the relationship between these properties and the phonon-drag effect was clarified. Phonon transport properties were determined using nanoindentation and spot-periodic heating radiation thermometry. The electron transport properties were determined based on the electrical conductivity of Si. The diffusive Seebeck coefficient derived from the electron transport properties was in good agreement with previous reports. However, the value of the phonon-drag Seebeck coefficient derived from the phonon transport properties is very low. This phenomenon suggests that phonons with a normal mean free path (MFP) do not contribute to the increase in the Seebeck coefficient; however, phonons with a long MFP and low frequency increase the Seebeck coefficient via the phonon-drag effect. Moreover, the phonon-drag effect was sufficiently pronounced even at 300 K and in the heavily doped region. These features are key in designing thermoelectric materials with enhanced performance derived from the phonon-drag effect.
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Affiliation(s)
- Masataka Hase
- Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan
| | - Daiki Tanisawa
- Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan
| | - Kaito Kohashi
- Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan
| | - Raichi Kamemura
- Department of Mechanical Engineering, Kobe City College of Technology, 8-3 Gakuenhigashi-Machi, Kobe, Hyogo, 651-2194, Japan
| | - Shugo Miyake
- Department of Mechanical Engineering, Kobe City College of Technology, 8-3 Gakuenhigashi-Machi, Kobe, Hyogo, 651-2194, Japan
| | - Masayuki Takashiri
- Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan.
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6
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Mao C, Jin W, Xiang Y, Zhu Y, Wu J, Liu X, Wu S, Zheng Y, Cheung KMC, Yeung KWK. Realizing Highly Efficient Sonodynamic Bactericidal Capability through the Phonon-Electron Coupling Effect Using Two-Dimensional Catalytic Planar Defects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208681. [PMID: 36524686 DOI: 10.1002/adma.202208681] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/11/2022] [Indexed: 06/17/2023]
Abstract
Conferring catalytic defects in sonosensitizers is of paramount importance in reinforcing sonodynamic therapy. However, the formation of such 0D defects is governed by the Schottky defect principle. Herein, 2D catalytic planar defects are designed within Ti3 C2 sheets to address this challenge. These specific planar slip dislocations with abundant Ti3+ species (Ti3 C2 -SD(Ti3+ )) can yield surface-bound O due to the effective activation of O2 , thus resulting in a substantial amount of 1 O2 generation and the 99.72% ± 0.03% bactericidal capability subject to ultrasound (US) stimulation. It is discovered that the 2D catalytic planar defects can intervene in electron transfer through the phonon drag effect-a coupling effect between surface electrons and US-triggered phonons-that simultaneously contributes to a dramatic decrease in O2 activation energy from 1.65 to 0.06 eV. This design has achieved a qualitative leap in which the US catalytic site has transformed from 0D to 2D. Moreover, it is revealed that the electron origin, electron transfer, and visible O2 activation pathway triggered by US can be attributed to the phonon-electron coupling effect. After coating with neutrophil membrane (NM) proteins, the NM-Ti3 C2 -SD(Ti3+ ) sheets further demonstrate a 6-log10 reduction in methicillin-resistant Staphylococcus aureus burden in the infected bony tissue.
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Affiliation(s)
- Congyang Mao
- Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
| | - Wanyu Jin
- Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
| | - Yiming Xiang
- Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
| | - Yizhou Zhu
- Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
| | - Jun Wu
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
| | - Xiangmei Liu
- School of Life Science and Health Engineering, Hebei University of Technology, Xiping Avenue 5340, Beichen District, Tianjin, 300401, China
| | - Shuilin Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Yufeng Zheng
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Kenneth M C Cheung
- Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
| | - Kelvin Wai Kwok Yeung
- Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma, Department of Orthopaedics and Traumatology, The University of Hong Kong-Shenzhen Hospital, Shenzhen, 518053, China
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7
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Mahfouzi F, Kioussis N. Elastodynamically Induced Spin and Charge Pumping in Bulk Heavy Metals. PHYSICAL REVIEW LETTERS 2022; 128:215902. [PMID: 35687473 DOI: 10.1103/physrevlett.128.215902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2021] [Revised: 04/11/2022] [Accepted: 05/10/2022] [Indexed: 06/15/2023]
Abstract
Analogous to the spin-Hall effect (SHE), ab initio electronic structure calculations reveal that acoustic phonons can induce charge (spin) current flowing along (normal to) its propagation direction. Using the Floquet approach we have calculated the elastodynamically induced charge and spin pumping in bulk Pt and demonstrate that (i) the longitudinal charge pumping originates from the Berry curvature, while the transverse pumped spin current is an odd function of the electronic relaxation time and diverges in the clean limit. (ii) The longitudinal charge current is of nonrelativstic origin, while the transverse spin current is a relativistic effect that to lowest order scales linearly with the spin-orbit coupling strength. (iii) Both charge and spin pumped currents have parabolic dependence on the amplitude of the elastic wave.
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Affiliation(s)
- Farzad Mahfouzi
- Department of Physics and Astronomy, California State University Northridge, Northridge, California 91330-8268, USA
| | - Nicholas Kioussis
- Department of Physics and Astronomy, California State University Northridge, Northridge, California 91330-8268, USA
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8
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Torres P, Wu S, Ju S, Liu C, Tadano T, Yoshida R, Shiomi J. Descriptors of intrinsic hydrodynamic thermal transport: screening a phonon database in a machine learning approach. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:135702. [PMID: 35008073 DOI: 10.1088/1361-648x/ac49c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
Machine learning techniques are used to explore the intrinsic origins of the hydrodynamic thermal transport and to find new materials interesting for science and engineering. The hydrodynamic thermal transport is governed intrinsically by the hydrodynamic scale and the thermal conductivity. The correlations between these intrinsic properties and harmonic and anharmonic properties, and a large number of compositional (290) and structural (1224) descriptors of 131 crystal compound materials are obtained, revealing some of the key descriptors that determines the magnitude of the intrinsic hydrodynamic effects, most of them related with the phonon relaxation times. Then, a trained black-box model is applied to screen more than 5000 materials. The results identify materials with potential technological applications. Understanding the properties correlated to hydrodynamic thermal transport can help to find new thermoelectric materials and on the design of new materials to ease the heat dissipation in electronic devices.
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Affiliation(s)
- Pol Torres
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
- EURECAT, Technology Center of Catalonia, Applied Artificial Intelligence, 08290 Cerdanyola, Barcelona, Spain
- Departament de Física, Universitat Autònoma de Barcelona (UAB), Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain
| | - Stephen Wu
- Research Organization of Information and Systems, The Institute of Statistical Mathematics (ISM), 10-3 Midori-cho, Tachikawa, Tokyo 190-8562, Japan
| | - Shenghong Ju
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
- China-UK Low Carbon Collage, Shanghai Jiao Tong University, Shanghai 201306, People's Republic of China
| | - Chang Liu
- Research Organization of Information and Systems, The Institute of Statistical Mathematics (ISM), 10-3 Midori-cho, Tachikawa, Tokyo 190-8562, Japan
| | - Terumasa Tadano
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials and Science, Tsukuba, Japan
| | - Ryo Yoshida
- Research Organization of Information and Systems, The Institute of Statistical Mathematics (ISM), 10-3 Midori-cho, Tachikawa, Tokyo 190-8562, Japan
- Center for Materials Research by Information Integration (CMI2), Research and Services Division of Materials Data and Integrated System (MaDIS), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Junichiro Shiomi
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
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9
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Qian X, Zhou J, Chen G. Phonon-engineered extreme thermal conductivity materials. NATURE MATERIALS 2021; 20:1188-1202. [PMID: 33686278 DOI: 10.1038/s41563-021-00918-3] [Citation(s) in RCA: 92] [Impact Index Per Article: 30.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2020] [Accepted: 01/04/2021] [Indexed: 05/27/2023]
Abstract
Materials with ultrahigh or low thermal conductivity are desirable for many technological applications, such as thermal management of electronic and photonic devices, heat exchangers, energy converters and thermal insulation. Recent advances in simulation tools (first principles, the atomistic Green's function and molecular dynamics) and experimental techniques (pump-probe techniques and microfabricated platforms) have led to new insights on phonon transport and scattering in materials and the discovery of new thermal materials, and are enabling the engineering of phonons towards desired thermal properties. We review recent discoveries of both inorganic and organic materials with ultrahigh and low thermal conductivity, highlighting heat-conduction physics, strategies used to change thermal conductivity, and future directions to achieve extreme thermal conductivities in solid-state materials.
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Affiliation(s)
- Xin Qian
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jiawei Zhou
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Gang Chen
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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10
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Ma J, Meng F, Xu D, Hu R, Luo X. Electron mobility and mode analysis of scattering for β-Ga 2O 3from first principles. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:465704. [PMID: 32702684 DOI: 10.1088/1361-648x/aba8ca] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2020] [Accepted: 07/23/2020] [Indexed: 06/11/2023]
Abstract
The electrical transport properties of β-Ga2O3are studied by first-principles calculations. The calculated intrinsic electron Hall mobilities agree well with experiments, with intrinsic Hall factor decreasing monotonically from 1.54 at 100 K to 1.14 at 800 K. The anisotropy of electron mobility is weak due to the almost isotropic electron effective mass, which also results in nearly isotropic Seebeck coefficient and electronic contribution to the thermal conductivity. The mode analysis of phonon scattering reveals that the optical phonon scattering is almost entirely determined by the long-range polar interactions, whereas the acoustic phonon scattering also plays an important role especially at low temperatures. The intrinsic electron mobility is significantly overestimated even above room temperature by only considering the polar optical phonon scattering, in contrast to previous predictions from fitting of phenomenological models.
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Affiliation(s)
- Jinlong Ma
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Fanchen Meng
- Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, United States of America
| | - Dongwei Xu
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Run Hu
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiaobing Luo
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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11
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Large enhancement of thermoelectric performance in MoS 2/ h-BN heterostructure due to vacancy-induced band hybridization. Proc Natl Acad Sci U S A 2020; 117:13929-13936. [PMID: 32522877 DOI: 10.1073/pnas.2007495117] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Local impurity states arising from atomic vacancies in two-dimensional (2D) nanosheets are predicted to have a profound effect on charge transport due to resonant scattering and can be used to manipulate thermoelectric properties. However, the effects of these impurities are often masked by external fluctuations and turbostratic interfaces; therefore, it is challenging to probe the correlation between vacancy impurities and thermoelectric parameters experimentally. In this work, we demonstrate that n-type molybdenum disulfide (MoS2) supported on hexagonal boron nitride (h-BN) substrate reveals a large anomalous positive Seebeck coefficient with strong band hybridization. The presence of vacancies on MoS2 with a large conduction subband splitting of 50.0 ± 5.0 meV may contribute to Kondo insulator-like properties. Furthermore, by tuning the chemical potential, the thermoelectric power factor can be enhanced by up to two orders of magnitude to 50 mW m-1 K-2 Our work shows that defect engineering in 2D materials provides an effective strategy for controlling band structure and tuning thermoelectric transport.
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12
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Naseri M, Hoat D, Ponce-Pérez R, Rivas-Silva J, Cocoletzi GH. An assessment of the structural, electronic, optical and thermoelectric properties of the BaAg2GeS4 compound. J SOLID STATE CHEM 2020. [DOI: 10.1016/j.jssc.2020.121260] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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13
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Zavjalov A, Tikhonov S, Kosyanov D. TiO 2-SrTiO 3 Biphase Nanoceramics as Advanced Thermoelectric Materials. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E2895. [PMID: 31500279 PMCID: PMC6766282 DOI: 10.3390/ma12182895] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/30/2019] [Revised: 08/25/2019] [Accepted: 09/03/2019] [Indexed: 12/14/2022]
Abstract
The review embraces a number of research papers concerning the fabrication of oxide thermoelectric systems, with TiO2-SrTiO3 biphase ceramics being emphasized. The ceramics is particularly known for a two-dimensional electron gas (2DEG) forming spontaneously on the TiO2/SrTiO3 heterointerface (modulation doping), unlike ordinary 2DEG occurrence on specially fabricated thin film. Such effect is provided by the SrTiO3 conduction band edge being 0.40 and 0.20 eV higher than that for anatase and rutile TiO2, respectively. That is why, in the case of a checkered arrangement of TiO2 and SrTiO3 grains, the united 2D net is probably formed along the grain boundaries with 2DEG occurring there. To reach such conditions, there should be applied novelties in the field of ceramics materials science, because it is important to obtain highly dense material preserving small (nanoscale) grain size and thin interface boundary. The review also discusses some aspects of reactive spark plasma sintering as a promising method of preparing perovskite-oxide TiO2-SrTiO3 thermoelectric materials for high-temperature applications.
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Affiliation(s)
- Alexey Zavjalov
- School of Natural Sciences, Far Eastern Federal University, 8 Sukhanova Street, Vladivostok 690950, Russian Federation.
| | - Sergey Tikhonov
- School of Natural Sciences, Far Eastern Federal University, 8 Sukhanova Street, Vladivostok 690950, Russian Federation.
| | - Denis Kosyanov
- School of Natural Sciences, Far Eastern Federal University, 8 Sukhanova Street, Vladivostok 690950, Russian Federation.
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14
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Yalamarthy AS, Muñoz Rojo M, Bruefach A, Boone D, Dowling KM, Satterthwaite PF, Goldhaber-Gordon D, Pop E, Senesky DG. Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas. NANO LETTERS 2019; 19:3770-3776. [PMID: 31088057 DOI: 10.1021/acs.nanolett.9b00901] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with ∼100 nm GaN thickness, which suppresses the phonon mean free path. However, when the thickness is increased to ∼1.2 μm, up to 32% (88%) of the Seebeck coefficient at 300 K (50 K) can be attributed to the drag component. In turn, the phonon drag enables state-of-the-art thermoelectric power factor in the thicker GaN film, up to ∼40 mW m-1 K-2 at 50 K. By measuring the thermal conductivity of these AlGaN/GaN films, we show that the magnitude of the phonon drag can increase even when the thermal conductivity decreases. Decoupling of thermal conductivity and Seebeck coefficient could enable important advancements in thermoelectric power conversion with devices based on 2DEGs.
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Affiliation(s)
| | - Miguel Muñoz Rojo
- Department of Thermal and Fluid Engineering , University of Twente , Enschede 7500 AE , Netherlands
| | - Alexandra Bruefach
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | - Derrick Boone
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
| | | | | | - David Goldhaber-Gordon
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
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15
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Tomczak JM. Thermoelectricity in correlated narrow-gap semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:183001. [PMID: 29633717 DOI: 10.1088/1361-648x/aab284] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class-such as FeSi and FeSb2-display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators-such as Ce3Bi4Pt3 for which we present new results-and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.
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Affiliation(s)
- Jan M Tomczak
- Institute of Solid State Physics, TU Wien, A-1040 Vienna, Austria
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16
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Jiang M, Xiao HY, Peng SM, Yang GX, Liu ZJ, Zu XT. A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures. Sci Rep 2018; 8:2012. [PMID: 29386543 PMCID: PMC5792629 DOI: 10.1038/s41598-018-20155-0] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2017] [Accepted: 01/09/2018] [Indexed: 11/09/2022] Open
Abstract
In this study, the low energy radiation responses of AlAs, GaAs and GaAs/AlAs superlattice are simulated and the radiation damage effects on their electronic structures are investigated. It is found that the threshold displacement energies for AlAs are generally larger than those for GaAs, i.e., the atoms in AlAs are more difficult to be displaced than those in GaAs under radiation environment. As for GaAs/AlAs superlattice, the Ga and Al atoms are more susceptible to the radiation than those in the bulk AlAs and GaAs, whereas the As atoms need comparable or much larger energies to be displaced than those in the bulk states. The created defects are generally Frenkel pairs, and a few antisite defects are also created in the superlattice structure. The created defects are found to have profound effects on the electronic properties of GaAs/AlAs superlattice, in which charge transfer, redistribution and even accumulation take place, and band gap narrowing and even metallicity are induced in some cases. This study shows that it is necessary to enhance the radiation tolerance of GaAs/AlAs superlattice to improve their performance under irradiation.
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Affiliation(s)
- M Jiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - H Y Xiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
| | - S M Peng
- Institute of Nuclear Physics and Chemistry, Chinese Academy of Engineering Physics, Mianyang, 621900, China
| | - G X Yang
- Institute of Nuclear Physics and Chemistry, Chinese Academy of Engineering Physics, Mianyang, 621900, China
| | - Z J Liu
- Department of Physics, Lanzhou City University, Lanzhou, 730070, China
| | - X T Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
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17
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Furmanchuk A, Saal JE, Doak JW, Olson GB, Choudhary A, Agrawal A. Prediction of seebeck coefficient for compounds without restriction to fixed stoichiometry: A machine learning approach. J Comput Chem 2017; 39:191-202. [DOI: 10.1002/jcc.25067] [Citation(s) in RCA: 42] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2017] [Revised: 07/09/2017] [Accepted: 09/01/2017] [Indexed: 12/23/2022]
Affiliation(s)
- Al'ona Furmanchuk
- Institute for Public Health and Medicine, Feinberg School of MedicineCenter for Health Information Partnerships, Northwestern UniversityChicagoIllinois 60611
| | | | | | | | - Alok Choudhary
- Department of Electrical Engineering and Computer ScienceNorthwestern UniversityEvanstonIllinois 60208
| | - Ankit Agrawal
- Department of Electrical Engineering and Computer ScienceNorthwestern UniversityEvanstonIllinois 60208
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18
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Eklund P, Kerdsongpanya S, Alling B. Transition-metal-nitride-based thin films as novel energy harvesting materials. JOURNAL OF MATERIALS CHEMISTRY. C 2016; 4:3905-3914. [PMID: 27358737 PMCID: PMC4894070 DOI: 10.1039/c5tc03891j] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2015] [Accepted: 02/12/2016] [Indexed: 05/11/2023]
Abstract
The last few years have seen a rise in the interest in early transition-metal and rare-earth nitrides, primarily based on ScN and CrN, for energy harvesting by thermoelectricity and piezoelectricity. This is because of a number of important advances, among those the discoveries of exceptionally high piezoelectric coupling coefficient in (Sc,Al)N alloys and of high thermoelectric power factors of ScN-based and CrN-based thin films. These materials also constitute well-defined model systems for investigating thermodynamics of mixing for alloying and nanostructural design for optimization of phase stability and band structure. These features have implications for and can be used for tailoring of thermoelectric and piezoelectric properties. In this highlight article, we review the ScN- and CrN-based transition-metal nitrides for thermoelectrics, and drawing parallels with piezoelectricity. We further discuss these materials as a models systems for general strategies for tailoring of thermoelectric properties by integrated theoretical-experimental approaches.
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Affiliation(s)
- Per Eklund
- Thin Film Physics Division , Linköping University , IFM , 581 83 Linköping , Sweden .
| | - Sit Kerdsongpanya
- Thin Film Physics Division , Linköping University , IFM , 581 83 Linköping , Sweden .
| | - Björn Alling
- Thin Film Physics Division , Linköping University , IFM , 581 83 Linköping , Sweden . ; Max-Planck-Institut für Eisenforschung GmbH , D-40237 Düsseldorf , Germany
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