1
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Xing D, Tong B, Pan S, Wang Z, Luo J, Zhang J, Zhang CL. Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe 5. Nat Commun 2024; 15:4407. [PMID: 38782885 PMCID: PMC11116540 DOI: 10.1038/s41467-024-48761-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 05/14/2024] [Indexed: 05/25/2024] Open
Abstract
Topological flat bands - where the kinetic energy of electrons is quenched - provide a platform for investigating the topological properties of correlated systems. Here, we report the observation of a topological flat band formed by polar-distortion-assisted Rashba splitting in the three-dimensional Dirac material ZrTe5. The polar distortion and resulting Rashba splitting on the band are directly detected by torque magnetometry and the anomalous Hall effect, respectively. The local symmetry breaking further flattens the band, on which we observe resistance oscillations beyond the quantum limit. These oscillations follow the temperature dependence of the Lifshitz-Kosevich formula but are evenly distributed in B instead of 1/B at high magnetic fields. Furthermore, the cyclotron mass gets anomalously enhanced about 102 times at fields ~ 20 T. Our results provide an intrinsic platform without invoking moiré or order-stacking engineering, which opens the door for studying topologically correlated phenomena beyond two dimensions.
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Affiliation(s)
- Dong Xing
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bingbing Tong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Senyang Pan
- High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Zezhi Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianlin Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinglei Zhang
- High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Cheng-Long Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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2
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Yamada A, Fuseya Y. Quantum-classical correspondence and dissipative to dissipationless crossover in magnetotransport phenomena. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:245702. [PMID: 38437730 DOI: 10.1088/1361-648x/ad2ff0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Accepted: 03/04/2024] [Indexed: 03/06/2024]
Abstract
The three-dimensional magneto-conductivity tensor was derived in a gauge invariant form based on the Kubo formula considering quantum effects under a magnetic field, such as the Landau quantization and quantum oscillations. We analytically demonstrated that the quantum formula of the magneto-conductivity can be obtained by adding a quantum oscillation factor to the classical formula. This result establishes the quantum-classical correspondence, which has long been missing in magnetotransport phenomena. Moreover, we found dissipative-to-dissipationless crossover in the Hall conductivity by paying special attention to the analytic properties of the thermal Green's function. Finally, by calculating the magnetoresistance of semimetals, we identified a phase shift in quantum oscillation originating from the dissipationless transport predominant at high fields.
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Affiliation(s)
- Akiyoshi Yamada
- The Institute for Solid State Physics, the University of Tokyo, Chiba 277-8581, Japan
- Department of Engineering Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
| | - Yuki Fuseya
- Department of Engineering Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
- Institute for Advanced Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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3
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Liu J, Zhou Y, Yepez Rodriguez S, Delmont MA, Welser RA, Ho T, Sirica N, McClure K, Vilmercati P, Ziller JW, Mannella N, Sanchez-Yamagishi JD, Pettes MT, Wu R, Jauregui LA. Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe 5. Nat Commun 2024; 15:332. [PMID: 38184667 PMCID: PMC10771548 DOI: 10.1038/s41467-023-44547-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 12/19/2023] [Indexed: 01/08/2024] Open
Abstract
The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.
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Affiliation(s)
- Jinyu Liu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | | | - Matthew A Delmont
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Robert A Welser
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Triet Ho
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Nicholas Sirica
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Kaleb McClure
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Paolo Vilmercati
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Joseph W Ziller
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Norman Mannella
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | | | - Michael T Pettes
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Luis A Jauregui
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
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4
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Tang F, Chen Y, Ge XL, Meng WZ, Han ZD, Qian B, Zhao W, Jiang XF, Fang Y, Ju S. Anisotropic magnetoresistance and electronic features of the candidate topological compound praseodymium monobismuthide. Phys Chem Chem Phys 2023; 25:25573-25580. [PMID: 37721039 DOI: 10.1039/d3cp03480a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/19/2023]
Abstract
PrBi, a sister member of the rare-earth monopnictide family, is an excellent candidate for studying extreme magnetoresistance and nontrivial topological electronic states. In this study, we perform angular magnetoresistance measurements as well as bulk and surface band structure calculations on this compound. PrBi's magnetoresistance is revealed to be significantly angle-dependent and shows a fourfold symmetry as always observed in the nonmagnetic isostructural counterparts, including LaSb, LaBi, and LuBi. Its angular magnetoresistance can be reproduced well using the semiclassical two-band model. The deduced parameters suggest that PrBi hosts an elongated electron pocket with a mobility anisotropy of ∼3.13 and is slightly uncompensated in its carrier concentration. Our bulk and surface band structure calculations confirm the anisotropic electronic features. Moreover, we reveal that a nodal-line-shaped surface state appears at the X̄ point, and is associated with the quadratic dispersion along the -X̄ direction, and the linear type-I Dirac dispersion along the X̄-M̄ direction. Owing to the type-I Dirac dispersion feature, PrBi could serve as a promising material platform for studying many unexpected physical properties, such as the highly anisotropic transport and valley polarization of electrons.
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Affiliation(s)
- F Tang
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China.
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - Y Chen
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China.
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - X-L Ge
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - W-Z Meng
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Z-D Han
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - B Qian
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - W Zhao
- Department of Materials Science and Engineering, Monash University, Clayton, VIC 3800, Australia
| | - X-F Jiang
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - Y Fang
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
| | - S Ju
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China.
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5
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Liu Y, Pi H, Watanabe K, Taniguchi T, Gu G, Li Q, Weng H, Wu Q, Li Y, Xu Y. Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices. NANO LETTERS 2023. [PMID: 37205726 DOI: 10.1021/acs.nanolett.3c01528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron-hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Our work helps to resolve the longstanding puzzles on ZrTe5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.
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Affiliation(s)
- Yonghe Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hanqi Pi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States
| | - Qiang Li
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, United States
| | - Hongming Weng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Quansheng Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yongqing Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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6
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Wang J, Jiang Y, Zhao T, Dun Z, Miettinen AL, Wu X, Mourigal M, Zhou H, Pan W, Smirnov D, Jiang Z. Magneto-transport evidence for strong topological insulator phase in ZrTe 5. Nat Commun 2021; 12:6758. [PMID: 34799584 PMCID: PMC8604917 DOI: 10.1038/s41467-021-27119-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Accepted: 11/02/2021] [Indexed: 11/09/2022] Open
Abstract
The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicator. We show that an inverted band can lead to a four-fold splitting of the non-zero Landau levels, contrasting the two-fold splitting (spin splitting only) in the normal band. We confirm our predictions in magneto-transport experiments on a narrow-gap strong topological insulator, zirconium pentatelluride (ZrTe5), with the observation of additional splittings in the quantum oscillations and also an anomalous peak in the extreme quantum limit. Our work establishes an effective strategy for identifying the band inversion as well as the associated topological phases for future topological materials research.
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Affiliation(s)
- Jingyue Wang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, 100871, Beijing, China
| | - Yuxuan Jiang
- School of Physics and Optoelectronics Engineering, Anhui University, 230601, Hefei, Anhui, China.
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.
| | - Tianhao Zhao
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Zhiling Dun
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Anna L Miettinen
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Xiaosong Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, 100871, Beijing, China
| | - Martin Mourigal
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Haidong Zhou
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, 37996, USA
| | - Wei Pan
- Quantum and Electronic Materials Department, Sandia National Laboratories, Livermore, CA, 94551, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Zhigang Jiang
- School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
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7
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Kar S, Saha A. Fermi level fluctuations, reduced effective masses and Zeeman effect during quantum oscillations in nodal line semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:035601. [PMID: 34598178 DOI: 10.1088/1361-648x/ac2c40] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Accepted: 10/01/2021] [Indexed: 06/13/2023]
Abstract
We probe quantum oscillations in nodal line semimetals (NLSM) by considering an NLSM continuum model under strong magnetic field and report the characteristics of the Landau level (LL) spectra and the fluctuations in the Fermi level as the field in a direction perpendicular to the nodal plane is varied through. Based on the results on parallel magnetization, we demonstrate the growth of quantum oscillation with field strength as well as its constancy in period when plotted against 1/B. We find that the density of states (DOS) which show series of peaks in succession, witness bifurcation of those peaks due to Zeeman effect. For field normal to nodal plane, such bifurcations are discernible only if the electron effective mass is considerably smaller than its free value, which usually happens in these systems. Though a reduced effective massm* causes the Zeeman splitting to become small compared to LL spacings, experimental results indicate a manifold increase in the Landegfactor which again amplifies the Zeeman contribution. We also consider magnetic field in the nodal plane for which the DOS peaks do not repeat periodically with energy anymore. The spectra become more spread out and the Zeeman splittings become less prominent. We find the low energy topological regime, that appears with such in-plane field set up, to shrink further with reducedm* values. However, such topological regime can be stretched out in case there are smaller Fermi velocities for electrons in the direction normal to the nodal plane.
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Affiliation(s)
- Satyaki Kar
- AKPC Mahavidyalaya, Bengai, West Bengal-712611, India
| | - Anupam Saha
- AKPC Mahavidyalaya, Bengai, West Bengal-712611, India
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8
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Lee SE, Oh MJ, Ji S, Kim J, Jun JH, Kang W, Jo Y, Jung MH. Orbit topology analyzed from π phase shift of magnetic quantum oscillations in three-dimensional Dirac semimetal. Proc Natl Acad Sci U S A 2021; 118:e2023027118. [PMID: 34266947 PMCID: PMC8307846 DOI: 10.1073/pnas.2023027118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
With the emergence of Dirac fermion physics in the field of condensed matter, magnetic quantum oscillations (MQOs) have been used to discern the topology of orbits in Dirac materials. However, many previous researchers have relied on the single-orbit Lifshitz-Kosevich (LK) formula, which overlooks the significant effect of degenerate orbits on MQOs. Since the single-orbit LK formula is valid for massless Dirac semimetals with small cyclotron masses, it is imperative to generalize the method applicable to a wide range of Dirac semimetals, whether massless or massive. This report demonstrates how spin-degenerate orbits affect the phases in MQOs of three-dimensional massive Dirac semimetal, NbSb2 With varying the direction of the magnetic field, an abrupt π phase shift is observed due to the interference between the spin-degenerate orbits. We investigate the effect of cyclotron mass on the π phase shift and verify its close relation to the phase from the Zeeman coupling. We find that the π phase shift occurs when the cyclotron mass is half of the electron mass, indicating the effective spin gyromagnetic ratio as g s = 2. Our approach is not only useful for analyzing MQOs of massless Dirac semimetals with a small cyclotron mass but also can be used for MQOs in massive Dirac materials with degenerate orbits, especially in topological materials with a sufficiently large cyclotron mass. Furthermore, this method provides a useful way to estimate the precise g s value of the material.
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Affiliation(s)
- Sang-Eon Lee
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Myeong-Jun Oh
- Department of Physics, Kyungpook National University, Daegu 41566, Korea
| | - Sanghyun Ji
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jinsu Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jin-Hyeon Jun
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Woun Kang
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Younjung Jo
- Department of Physics, Kyungpook National University, Daegu 41566, Korea;
| | - Myung-Hwa Jung
- Department of Physics, Sogang University, Seoul 04107, Korea;
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9
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Wu J, Wang CM. Anisotropic magnetotransport in tilted magnetic topological semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:165701. [PMID: 33498034 DOI: 10.1088/1361-648x/abdff5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Accepted: 01/26/2021] [Indexed: 06/12/2023]
Abstract
We systematically investigate the anisotropic magneto-conductivity and planar Hall effect in tilted magnetic topological semimetals in the frame of Kubo formula by considering the vertex correction of velocity. The nonzero anisotropic magneto-conductivity is due to the intrinsic magnetization by magnetic doping rather than the external magnetic field previously studied in literatures. In the scenario, tilt, which is common in band structure, plays a key role in this anisotropic magneto-conductivity. This anisotropic magneto-conductivity completely originates from the band anisotropy. The vertex correction only amends the magnitude, but does not change the qualitative behavior of the longitudinal conductivity. However, the planar Hall conductivity is always zero for tilt along bothxandydirections in vivid contrast to the case arising from an external magnetic field. Our work offers a route to understand the anisotropic magneto-conductivity effect in tilted Weyl semimetals with Zeeman field. It will be helpful to get a deeper understanding of the transport characteristic in tilted topological semimetals.
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Affiliation(s)
- J Wu
- Department of Physics, Shanghai Normal University, Shanghai 200234, People's Republic of China
| | - C M Wang
- Department of Physics, Shanghai Normal University, Shanghai 200234, People's Republic of China
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, People's Republic of China
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10
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Hooda MK, Yadav CS, Samal D. Electronic and topological properties of group-10 transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:103001. [PMID: 33570047 DOI: 10.1088/1361-648x/abd0c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The group 10 transition metal dichalcogenides (TMDs) (MX 2: M = Ni, Pd, Pt; X = S, Se, Te) have attracted much attention in the last few decades because of observation of exotic phases and phenomena such as superconductivity (SC), topological surface states (TSSs), type II Dirac fermions, helical spin texture, Rashba effect, 3D Dirac plasmons, metal-insulator transitions, charge density waves (CDW) etc. In this review, we cover the experimental and theoretical progress on the physical phenomena influenced by the strong electron-electron correlation of the group-10 TMDs from the past to the present. We have especially emphasized on the SC and topological phases in the bulk as well as in atomically thin materials.
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Affiliation(s)
- M K Hooda
- Institute of Physics, Bhubaneswar, Bhubaneswar-751005, India
| | - C S Yadav
- School of Basic Sciences, Indian Institute of Technology Mandi, Mandi-175005 (HP), India
| | - D Samal
- Institute of Physics, Bhubaneswar, Bhubaneswar-751005, India
- Homi Bhabha National Institute, Anushakti Nagar, Mumbai 400085, India
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11
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Kumar N, Guin SN, Manna K, Shekhar C, Felser C. Topological Quantum Materials from the Viewpoint of Chemistry. Chem Rev 2021; 121:2780-2815. [PMID: 33151662 PMCID: PMC7953380 DOI: 10.1021/acs.chemrev.0c00732] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Indexed: 11/29/2022]
Abstract
Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds, and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.
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Affiliation(s)
- Nitesh Kumar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Satya N. Guin
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Kaustuv Manna
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Chandra Shekhar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
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12
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Jiang Y, Wang J, Zhao T, Dun ZL, Huang Q, Wu XS, Mourigal M, Zhou HD, Pan W, Ozerov M, Smirnov D, Jiang Z. Unraveling the Topological Phase of ZrTe_{5} via Magnetoinfrared Spectroscopy. PHYSICAL REVIEW LETTERS 2020; 125:046403. [PMID: 32794786 DOI: 10.1103/physrevlett.125.046403] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Revised: 06/04/2020] [Accepted: 07/07/2020] [Indexed: 06/11/2023]
Abstract
For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the anisotropic transition-metal pentatelluride ZrTe_{5} as an example, we show that the band inversion manifests itself as a second extremum (band gap) in the layer stacking direction, which can be probed experimentally via magnetoinfrared spectroscopy. Specifically, we find that the band anisotropy of ZrTe_{5} features a slow dispersion in the layer stacking direction, along with an additional set of optical transitions from a band gap next to the Brillouin zone center. Our work identifies ZrTe_{5} as a strong TI at liquid helium temperature and provides a new perspective in determining band inversion in layered topological materials.
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Affiliation(s)
- Y Jiang
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
| | - J Wang
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China
| | - T Zhao
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Z L Dun
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Q Huang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - X S Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China
| | - M Mourigal
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - H D Zhou
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - W Pan
- Quantum and Electronic Materials Department, Sandia National Laboratories, Livermore, California 94551, USA
| | - M Ozerov
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
| | - D Smirnov
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
| | - Z Jiang
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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13
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Zhang W, Wang P, Skinner B, Bi R, Kozii V, Cho CW, Zhong R, Schneeloch J, Yu D, Gu G, Fu L, Wu X, Zhang L. Observation of a thermoelectric Hall plateau in the extreme quantum limit. Nat Commun 2020; 11:1046. [PMID: 32098952 PMCID: PMC7042294 DOI: 10.1038/s41467-020-14819-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2019] [Accepted: 01/30/2020] [Indexed: 11/09/2022] Open
Abstract
The thermoelectric Hall effect is the generation of a transverse heat current upon applying an electric field in the presence of a magnetic field. Here, we demonstrate that the thermoelectric Hall conductivity αxy in the three-dimensional Dirac semimetal ZrTe5 acquires a robust plateau in the extreme quantum limit of magnetic field. The plateau value is independent of the field strength, disorder strength, carrier concentration, or carrier sign. We explain this plateau theoretically and show that it is a unique signature of three-dimensional Dirac or Weyl electrons in the extreme quantum limit. We further find that other thermoelectric coefficients, such as the thermopower and Nernst coefficient, are greatly enhanced over their zero-field values even at relatively low fields.
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Affiliation(s)
- Wenjie Zhang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing Key Laboratory of Quantum Devices, Peking University, 100871, Beijing, China
| | - Peipei Wang
- Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Brian Skinner
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Physics, Ohio State University, Columbus, OH, 43210, USA
| | - Ran Bi
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing Key Laboratory of Quantum Devices, Peking University, 100871, Beijing, China
| | - Vladyslav Kozii
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Chang-Woo Cho
- Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Ruidan Zhong
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - John Schneeloch
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Dapeng Yu
- Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Xiaosong Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing Key Laboratory of Quantum Devices, Peking University, 100871, Beijing, China.
- Frontiers Science Center for Nano-optoelectronics and Collaborative Innovation Center of Quantum Matter, Peking University, 100871, Beijing, China.
| | - Liyuan Zhang
- Department of Physics, Southern University of Science and Technology, 518055, Shenzhen, China.
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14
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Zhang JL, Wang CM, Guo CY, Zhu XD, Zhang Y, Yang JY, Wang YQ, Qu Z, Pi L, Lu HZ, Tian ML. Anomalous Thermoelectric Effects of ZrTe_{5} in and beyond the Quantum Limit. PHYSICAL REVIEW LETTERS 2019; 123:196602. [PMID: 31765179 DOI: 10.1103/physrevlett.123.196602] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2019] [Revised: 08/14/2019] [Indexed: 06/10/2023]
Abstract
Thermoelectric effects are more sensitive and promising probes to topological properties of emergent materials, but much less addressed compared to other physical properties. We study the thermoelectric effects of ZrTe_{5} in a magnetic field. The presence of the nontrivial electrons leads to the anomalous Nernst effect and quasilinear field dependence of thermopower below the quantum limit. In the strong-field quantum limit, both the thermopower and Nernst signal exhibit exotic peaks. At higher magnetic fields, the Nernst signal has a sign reversal at a critical field where the thermopower approaches zero. We propose that these anomalous behaviors can be attributed to the gap closing of the zeroth Landau bands in topological materials with the band inversion. Our understanding to the anomalous thermoelectric properties in ZrTe_{5} opens a new avenue for exploring Dirac physics in topological materials.
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Affiliation(s)
- J L Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - C M Wang
- Department of Physics, Shanghai Normal University, Shanghai 200234, China
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Institute of Material Science and Engineering, École Polytechnique Fédéral de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - C Y Guo
- Institute of Material Science and Engineering, École Polytechnique Fédéral de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - X D Zhu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Y Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - J Y Yang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Y Q Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Z Qu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - L Pi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
| | - Hai-Zhou Lu
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - M L Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, Anhui, China
- School of Physics and Materials Sciences, Anhui University, Hefei 230601, Anhui,China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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15
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Yu X, Wen X, Zhang W, Yang L, Wu H, Lou X, Xie Z, Liu Y, Chang H. Fast and controlled growth of two-dimensional layered ZrTe3 nanoribbons by chemical vapor deposition. CrystEngComm 2019. [DOI: 10.1039/c9ce00793h] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We first demonstrated ZrTe3 nanoribbons can be grown directly by chemical vapor deposition method, which exhibit intriguing magnetic properties.
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Affiliation(s)
- Xu Yu
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Xiaokun Wen
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Li Yang
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Hao Wu
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Xun Lou
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Zijian Xie
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Yuan Liu
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
| | - Haixin Chang
- Center for Joining and Electronic Packaging
- State Key Laboratory of Material Processing and Die & Mould Technology
- School of Materials Science and Engineering
- Huazhong University of Science and Technology
- Wuhan 430074
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