1
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Zheng J, Shi W, Li Z, Zhang J, Yang CY, Zhu Z, Wang M, Zhang J, Han F, Zhang H, Chen Y, Hu F, Shen B, Chen Y, Sun J. Charge-Transfer-Induced Interfacial Ferromagnetism in Ferromagnet-Free Oxide Heterostructures. ACS NANO 2024; 18:9232-9241. [PMID: 38466082 DOI: 10.1021/acsnano.4c01910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/12/2024]
Abstract
Due to the strong interlayer coupling between multiple degrees of freedom, oxide heterostructures have demonstrated exotic properties that are not shown by their bulk counterparts. One of the most interesting properties is ferromagnetism at the interface formed between "nonferromagnetic" compounds. Here we report on the interfacial ferromagnetic phase induced in the superlattices consisting of the two paramagnetic oxides CaRuO3 (CRO) and LaNiO3 (LNO). By varying the sublayer thickness in the superlattice period, we demonstrate that the ferromagnetic order has been established in both CaRuO3 and LaNiO3 sublayers, exhibiting an identical Curie temperature of ∼75 K. The X-ray absorption spectra suggest a strong charge transfer from Ru to Ni at the interface, triggering superexchange interactions between Ru/Ni ions and giving rise to the emergent ferromagnetic phase. Moreover, the X-ray linear dichroism spectra reveal the preferential occupancy of the d3z2-r2 orbital for the Ru ions and the dx2-y2 orbital for the Ni ions in the heterostructure. This leads to different magnetic anisotropy of the superlattices when they are dominated by CRO or LNO sublayers. This work clearly demonstrates a charge-transfer-induced interfacial ferromagnetic phase in the whole ferromagnet-free oxide heterostructures, offering a feasible way to tailor oxide materials for desired functionalities.
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Affiliation(s)
- Jie Zheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhe Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jing Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Chao-Yao Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Zhaozhao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Mengqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Furong Han
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, People's Republic of China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
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2
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Liu J, Gao X, Shi K, Zhang M, Wu J, Ukleev V, Radu F, Ji Y, Deng Z, Wei L, Hong Y, Hu S, Xiao W, Li L, Zhang Q, Wang Z, Wang L, Gan Y, Chen K, Liao Z. Hundred-Fold Enhancement in the Anomalous Hall Effect Induced by Hydrogenation. NANO LETTERS 2024; 24:1351-1359. [PMID: 38251855 DOI: 10.1021/acs.nanolett.3c04368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The anomalous Hall effect (AHE) is one of the most fascinating transport properties in condensed matter physics. However, the AHE magnitude, which mainly depends on net spin polarization and band topology, is generally small in oxides and thus limits potential applications. Here, we demonstrate a giant enhancement of AHE in a LaCoO3-induced 5d itinerant ferromagnet SrIrO3 by hydrogenation. The anomalous Hall resistivity and anomalous Hall angle, which are two of the most critical parameters in AHE-based devices, are found to increase to 62.2 μΩ·cm and 3%, respectively, showing an unprecedentedly large enhancement ratio of ∼10000%. Theoretical analysis suggests the key roles of Berry curvature in enhancing AHE. Furthermore, the hydrogenation concomitantly induces the significant elevation of Curie temperature from 75 to 160 K and 40-fold reinforcement of coercivity. Such giant regulation and very large AHE magnitude observed in SrIrO3 could pave the path for 5d oxide devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Ke Shi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Victor Ukleev
- Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Straße 15, Berlin 12489, Germany
| | - Florin Radu
- Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Straße 15, Berlin 12489, Germany
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhixiong Deng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Long Wei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Yuhao Hong
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Shilin Hu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Wen Xiao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Yulin Gan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
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3
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Hao L, Yi D, Wang M, Liu J, Yu P. Emergent quantum phenomena in atomically engineered iridate heterostructures. FUNDAMENTAL RESEARCH 2023; 3:313-321. [PMID: 38933764 PMCID: PMC11197666 DOI: 10.1016/j.fmre.2022.09.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 09/22/2022] [Accepted: 09/25/2022] [Indexed: 11/06/2022] Open
Abstract
Over the last few years, researches in iridates have developed into an exciting field with the discovery of numerous emergent phenomena, interesting physics, and intriguing functionalities. Among the studies, iridate-based artificial structures play a crucial role owing to their extreme flexibility and tunability in lattice symmetry, chemical composition, and crystal dimensionality. In this article, we present an overview of the recent progress regarding iridate-based artificial structures. We first explicitly introduce several essential concepts in iridates. Then, we illustrate important findings on representative SrIrO3/SrTiO3 superlattices, heterostructures comprised of SrIrO3 and magnetic oxides, and their response to external electric-field stimuli. Finally, we comment on existing problems and promising future directions in this exciting field.
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Affiliation(s)
- Lin Hao
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Di Yi
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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4
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Chaluvadi SK, Punathum Chalil S, Mazzola F, Dolabella S, Rajak P, Ferrara M, Ciancio R, Fujii J, Panaccione G, Rossi G, Orgiani P. Nd:YAG infrared laser as a viable alternative to excimer laser: YBCO case study. Sci Rep 2023; 13:3882. [PMID: 36890286 PMCID: PMC9995509 DOI: 10.1038/s41598-023-30887-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Accepted: 03/02/2023] [Indexed: 03/10/2023] Open
Abstract
We report on the growth and characterization of epitaxial YBa[Formula: see text]Cu[Formula: see text]O[Formula: see text] (YBCO) complex oxide thin films and related heterostructures exclusively by Pulsed Laser Deposition (PLD) and using first harmonic Nd:Y[Formula: see text]Al[Formula: see text]O[Formula: see text] (Nd:YAG) pulsed laser source ([Formula: see text] = 1064 nm). High-quality epitaxial YBCO thin film heterostructures display superconducting properties with transition temperature [Formula: see text] 80 K. Compared with the excimer lasers, when using Nd:YAG lasers, the optimal growth conditions are achieved at a large target-to-substrate distance d. These results clearly demonstrate the potential use of the first harmonic Nd:YAG laser source as an alternative to the excimer lasers for the PLD thin film community. Its compactness as well as the absence of any safety issues related to poisonous gas represent a major breakthrough in the deposition of complex multi-element compounds in form of thin films.
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Affiliation(s)
- Sandeep Kumar Chaluvadi
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.
| | - Shyni Punathum Chalil
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.,International Centre for Theoretical Physics (ICTP), Strada Costiera 11, 34151, Trieste, Italy
| | - Federico Mazzola
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.,Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, 30172, Venice, Italy
| | - Simone Dolabella
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy
| | - Piu Rajak
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.,International Centre for Theoretical Physics (ICTP), Strada Costiera 11, 34151, Trieste, Italy
| | - Marcello Ferrara
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy
| | - Regina Ciancio
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.,AREA Science Park, Padriciano 99, 34139, Trieste, Italy
| | - Jun Fujii
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy
| | - Giancarlo Panaccione
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy
| | - Giorgio Rossi
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.,Department of Physics, University of Milano, Via Celoria 16, 20133, Milan, Italy
| | - Pasquale Orgiani
- CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, s.s.14 km 163.5, 34149, Trieste, Italy.
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5
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Liu J, Zhang X, Ji Y, Gao X, Wu J, Zhang M, Li L, Liu X, Yan W, Yao T, Yin Y, Wang L, Guo H, Cheng G, Wang Z, Gao P, Wang Y, Chen K, Liao Z. Controllable Itinerant Ferromagnetism in Weakly Correlated 5d SrIrO 3. J Phys Chem Lett 2022; 13:11946-11954. [PMID: 36534070 DOI: 10.1021/acs.jpclett.2c03313] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The weakly correlated nature of 5d oxide SrIrO3 determines its rare ferromagnetism, and the control of its magnetic order is even less studied. Tailoring structure distortion is currently a main route to tune the magnetic order of 5d iridates, but only for the spatially confined insulating counterparts. Here, we have realized ferromagnetic order in metallic SrIrO3 by construction of SrIrO3/ferromagnetic-insulator (LaCoO3) superlattices, which reveal a giant coercivity of ∼10 T and saturation field of ∼25 T with strong perpendicular magnetic anisotropy. The Curie temperature of SrIrO3 can be controlled by engineering interface charge transfer, which is confirmed by Hall effect measurements collaborating with EELS and XAS. Besides, the noncoplanar spin texture is captured, which is caused by interfacial Dzyaloshinskii-Moriya interactions as well. These results indicate controllable itinerant ferromagnetism and an emergent topological magnetic state in strong spin-orbit coupled semimetal SrIrO3, showing great potential to develop efficient spintronic devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xinxin Zhang
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaokang Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Tao Yao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei230026, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai200433, China
| | - Guanglei Cheng
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei230026, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yilin Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
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6
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Wang Q, Gu Y, Chen C, Pan F, Song C. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities. J Phys Chem Lett 2022; 13:10065-10075. [PMID: 36264651 DOI: 10.1021/acs.jpclett.2c02634] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of mutually coupled degrees of freedom and tunable magneto-ionic properties. In this Perspective, we consider oxide spintronics as a knot of physics and chemistry and mainly discuss two current hot topics: spin-charge interconversion and magneto-ionics. First, spin-charge interconversion is focused on oxide films and heterostructures including 4d/5d heavy metal oxides (e.g., SrIrO3) and two-dimensional electron gases. Based on spin-charge interconversion, charge currents can be transformed to spin currents and generate spin-orbit torque in oxide/metal and all-oxide heterostructures. Additionally, the voltage control of magnetism in TMOs by the magneto-ionic pathway has rapidly accelerated during the past few years due to the versatile advantages of effective control, nonvolatile nature, low power cost, etc. Typical magneto-ionic oxide systems and corresponding physicochemical mechanisms will be discussed. Finally, further developments of oxide spintronics are envisioned, including material discovery, physics exploration, device design, and manipulation methods.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
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7
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Lu X, Liu J, Zhang N, Xie B, Yang S, Liu W, Jiang Z, Huang Z, Yang Y, Miao J, Li W, Cho S, Liu Z, Liu Z, Shen D. Dimensionality-Controlled Evolution of Charge-Transfer Energy in Digital Nickelates Superlattices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105864. [PMID: 35603969 PMCID: PMC9313943 DOI: 10.1002/advs.202105864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2021] [Revised: 04/06/2022] [Indexed: 06/15/2023]
Abstract
Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here the dimensionality effect on the ground electronic state in high-quality (NdNiO3 ) m /(SrTiO3 )1 superlattices is systematically studied through transport and soft X-ray absorption spectroscopy. The metal-to-insulator transition temperature decreases with the thickness of the NdNiO3 slab decreasing from bulk to 7 unit cells, then increases gradually as m further reduces to 1 unit cell. Spectral evidence demonstrates that the stabilization of insulating phase can be attributed to the increase of the charge-transfer energy between O 2p and Ni 3d bands. The prominent multiplet feature on the Ni L3 edge develops with the decrease of NdNiO3 slab thickness, suggesting the strengthening of the charge disproportionate state under the dimensional confinement. This work provides convincing evidence that dimensionality is an effective knob to modulate the charge-transfer energy and thus the collective ground state in nickelates.
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Affiliation(s)
- Xiangle Lu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Jishan Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Nian Zhang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Binping Xie
- Feimion Instruments (Shanghai) Company LimitedShanghai201906China
| | - Shuai Yang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Wanling Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhicheng Jiang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhe Huang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Yichen Yang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Jin Miao
- State Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai200433China
| | - Wei Li
- State Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai200433China
| | - Soohyun Cho
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhengtai Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhonghao Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Dawei Shen
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
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8
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Zhang Q, Hou Y, Zhang T, Xu Z, Huang Z, Yuan P, Jia L, Yang H, Huang Y, Ji W, Qiao J, Wu X, Wang Y. Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures. ACS NANO 2021; 15:16589-16596. [PMID: 34606233 DOI: 10.1021/acsnano.1c06332] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Microscopically visualizing the evolution of electronic structures at the interface between two electron-correlated domains shows fundamental importance in both material science and physics. Here, we report scanning tunneling microscopy and spectroscopy studies of the interfacial electronic structures evolution in a phase-engineered monolayer NbSe2 heterostructure. The H-NbSe2 metallic state penetrates the Mott insulating T-NbSe2 at the H/T phase interface, with a prominent 2D charge density wave (CDW) proximity effect. Moreover, an insulating Mott gap collapse with the disappearance of the upper Hubbard band is detected at the electronic phase transition region. Theoretical calculations reveal that such insulating Mott gap collapse can be attributed to the electron doping effect induced by the interface. Our findings promote a microscopical understanding of the interactions between different electron-correlated systems and provide an effective method for controlling the Mott insulating states with phase engineering.
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Affiliation(s)
- Quanzhen Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yanhui Hou
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Ziqiang Xu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Peiwen Yuan
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Liangguang Jia
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huixia Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Huang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jingsi Qiao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Xu Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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9
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Huang X, Sayed S, Mittelstaedt J, Susarla S, Karimeddiny S, Caretta L, Zhang H, Stoica VA, Gosavi T, Mahfouzi F, Sun Q, Ercius P, Kioussis N, Salahuddin S, Ralph DC, Ramesh R. Novel Spin-Orbit Torque Generation at Room Temperature in an All-Oxide Epitaxial La 0.7 Sr 0.3 MnO 3 /SrIrO 3 System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008269. [PMID: 33960025 DOI: 10.1002/adma.202008269] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 02/27/2021] [Indexed: 06/12/2023]
Abstract
Spin-orbit torques (SOTs) that arise from materials with large spin-orbit coupling offer a new pathway for energy-efficient and fast magnetic information storage. SOTs in conventional heavy metals and topological insulators are explored extensively, while 5d transition metal oxides, which also host ions with strong spin-orbit coupling, are a relatively new territory in the field of spintronics. An all-oxide, SrTiO3 (STO)//La0.7 Sr0.3 MnO3 (LSMO)/SrIrO3 (SIO) heterostructure with lattice-matched crystal structure is synthesized, exhibiting an epitaxial and atomically sharp interface between the ferromagnetic LSMO and the high spin-orbit-coupled metal SIO. Spin-torque ferromagnetic resonance (ST-FMR) is used to probe the effective magnetization and the SOT efficiency in LSMO/SIO heterostructures grown on STO substrates. Remarkably, epitaxial LSMO/SIO exhibits a large SOT efficiency, ξ|| = 1, while retaining a reasonably low shunting factor and increasing the effective magnetization of LSMO by ≈50%. The findings highlight the significance of epitaxy as a powerful tool to achieve a high SOT efficiency, explore the rich physics at the epitaxial interface, and open up a new pathway for designing next-generation energy-efficient spintronic devices.
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Affiliation(s)
- Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Shehrin Sayed
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, 94720, USA
| | | | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Saba Karimeddiny
- Department of Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Vladimir A Stoica
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Tanay Gosavi
- Components Research, Intel Corporation, Hillsboro, OR, 97124, USA
| | - Farzad Mahfouzi
- Department of Physics, California State University Northridge, Northridge, CA, 91330, USA
| | - Qilong Sun
- Department of Physics, California State University Northridge, Northridge, CA, 91330, USA
| | - Peter Ercius
- National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nicholas Kioussis
- Department of Physics, California State University Northridge, Northridge, CA, 91330, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, 94720, USA
| | - Daniel C Ralph
- Department of Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
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10
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Wang L, Yang Z, Bowden ME, Freeland JW, Sushko PV, Spurgeon SR, Matthews B, Samarakoon WS, Zhou H, Feng Z, Engelhard MH, Du Y, Chambers SA. Hole-Trapping-Induced Stabilization of Ni 4 + in SrNiO 3 /LaFeO 3 Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2005003. [PMID: 33006412 DOI: 10.1002/adma.202005003] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 09/06/2020] [Indexed: 06/11/2023]
Abstract
Creating new functionality in materials containing transition metals is predicated on the ability to control the associated charge states. For a given transition metal, there is an upper limit on valence that is not exceeded under normal conditions. Here, it is demonstrated that this limit of 3+ for Ni and Fe can be exceeded via synthesis of (SrNiO3 )m /(LaFeO3 )n superlattices by tuning n and m. The Goldschmidt tolerance constraints are lifted, and SrNi4+ O3 with holes on adjacent O anions is stabilized as a perovskite at the single-unit-cell level (m = 1). Holding m = 1, spectroscopy reveals that the n = 1 superlattice contains Ni3+ and Fe4+ , whereas Ni4+ and Fe3+ are observed in the n = 5 superlattice. It is revealed that the B-site cation valences can be tuned by controlling the magnitude of the FeO6 octahedral rotations, which, in turn, determine the energy balance between Ni3+ /Fe4+ and Ni4+ /Fe3+ , thus controlling emergent electrical properties such as the band alignment and resulting hole confinement. This approach can be extended to other systems for synthesizing novel, metastable layered structures with new functionalities.
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Affiliation(s)
- Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Zhenzhong Yang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Mark E Bowden
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - John W Freeland
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Peter V Sushko
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Steven R Spurgeon
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - Bethany Matthews
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - Widitha S Samarakoon
- School of Chemical, Biological and Environment Engineering, Oregon State University, Corvallis, OR, 97331, USA
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Zhenxing Feng
- School of Chemical, Biological and Environment Engineering, Oregon State University, Corvallis, OR, 97331, USA
| | - Mark H Engelhard
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Scott A Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
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11
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Yi D, Wang Y, van ʼt Erve OMJ, Xu L, Yuan H, Veit MJ, Balakrishnan PP, Choi Y, N'Diaye AT, Shafer P, Arenholz E, Grutter A, Xu H, Yu P, Jonker BT, Suzuki Y. Emergent electric field control of phase transformation in oxide superlattices. Nat Commun 2020; 11:902. [PMID: 32060300 PMCID: PMC7021769 DOI: 10.1038/s41467-020-14631-3] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2019] [Accepted: 01/20/2020] [Indexed: 11/09/2022] Open
Abstract
Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized transition metal oxide that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up this class of materials for voltage-controlled functionality.
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Affiliation(s)
- Di Yi
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA.
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Olaf M J van ʼt Erve
- Materials Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Liubin Xu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Hongtao Yuan
- National Laboratory of Solid-State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Michael J Veit
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Purnima P Balakrishnan
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Physics, Stanford University, Stanford, CA, 94305, USA
| | - Yongseong Choi
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Alpha T N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Elke Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, 14853, USA
| | - Alexander Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA
| | - Haixuan Xu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China.
- Frontier Science Center for Quantum Information, Beijing, 100084, China.
- RIKEN Center for Emergent Matter Science (CEMS), Saitama, 351-0198, Japan.
| | - Berend T Jonker
- Materials Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Yuri Suzuki
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
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12
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Abstract
Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, leading to an increase in the electrical conductivity. Here we demonstrate, in contrast, that in the correlated-electron perovskite rare-earth nickelates, RNiO3 (R is a rare-earth element such as Sm or Nd), electrons associated with oxygen vacancies strongly localize, leading to a dramatic decrease in the electrical conductivity by several orders of magnitude. This unusual behavior is found to stem from the combination of crystal field splitting and filling-controlled Mott-Hubbard electron-electron correlations in the Ni 3d orbitals. Furthermore, we show the distribution of oxygen vacancies in NdNiO3 can be controlled via an electric field, leading to analog resistance switching behavior. This study demonstrates the potential of nickelates as testbeds to better understand emergent physics in oxide heterostructures as well as candidate systems in the emerging fields of artificial intelligence.
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