Atomic structure of misfit dislocations in metal‐ceramic interfaces

Characterization and Simulation of Nanoscale Catastrophic Failure of Metal/Ceramic Interfaces

The catastrophic failure of metal/ceramic interfaces is a complex process involving the energy transfer between accumulated elastic strain energy and many types of energy dissipation. To quantify the contribution of bulk and interface cohesive energy to the interface cleavage fracture without global plastic deformation, we characterized the quasi-static fracture process of both coherent and semi-coherent fcc-metal/MgO(001) interface systems using a spring series model and molecular static simulations. Our results show that the theoretical catastrophe point and spring-back length by the spring series model are basically consistent with the simulation results of the coherent interface systems. For defect interfaces with misfit dislocations, atomistic simulations revealed an obvious interface weakening effect in terms of reduced tensile strength and work of adhesion. As the model thickness increases, the tensile failure behaviors show significant scale effects-thick models tend to catastrophic failure with abrupt stress drop and obvious spring-back phenomenon. This work provides insight into the origin of catastrophic failure at metal/ceramic interfaces, which highlights a pathway by combining the material and structure design to improve the reliability of layered metal-ceramic composites.

Nanostructure, Plastic Deformation, and Influence of Strain Rate Concerning Ni/Al2O3 Interface System Using a Molecular Dynamic Study (LAMMPS)

The plastic deformation mechanisms of Ni/Al₂O₃ interface systems under tensile loading at high strain rates were investigated by the classical molecular dynamics (MD) method. A Rahman-Stillinger-Lemberg potential was used for modeling the interaction between Ni and Al atoms and between Ni and O atoms at the interface. To explore the dislocation nucleation and propagation mechanisms during interface tensile failure, two kinds of interface structures corresponding to the terminating Ni layer as buckling layer (Type I) and transition layer (Type II) were established. The fracture behaviors show a strong dependence on interface structure. For Type I interface samples, the formation of Lomer-Cottrell locks in metal causes strain hardening; for Type II interface samples, the yield strength is 40% higher than that of Type I due to more stable Ni-O bonds at the interface. At strain rates higher than 1×109 s-1, the formation of L-C locks in metal is suppressed (Type I), and the formation of Shockley dislocations at the interface is delayed (Type II). The present work provides the direct observation of nucleation, motion, and reaction of dislocations associated with the complex interface dislocation structures of Ni/Al₂O₃ interfaces and can help researchers better understand the deformation mechanisms of this interface at extreme conditions.

Defect Nanostructure and its Impact on Magnetism of α-Cr2 O3 Thin Films

Thin films of the magnetoelectric insulator α-Cr₂ O₃ are technologically relevant for energy-efficient magnetic memory devices controlled by electric fields. In contrast to single crystals, the quality of thin Cr₂ O₃ films is usually compromised by the presence of point defects and their agglomerations at grain boundaries, putting into question their application potential. Here, the impact of the defect nanostructure, including sparse small-volume defects and their complexes is studied on the magnetic properties of Cr₂ O₃ thin films. By tuning the deposition temperature, the type, size, and relative concentration of defects is tailored, which is analyzed using the positron annihilation spectroscopy complemented with electron microscopy studies. The structural characterization is correlated with magnetotransport measurements and nitrogen-vacancy microscopy of antiferromagnetic domain patterns. Defects pin antiferromagnetic domain walls and stabilize complex multidomain states with a domain size in the sub-micrometer range. Despite their influence on the domain configuration, neither small open-volume defects nor grain boundaries in Cr₂ O₃ thin films affect the Néel temperature in a broad range of deposition parameters. The results pave the way toward the realization of spin-orbitronic devices where magnetic domain patterns can be tailored based on defect nanostructures without affecting their operation temperature.

First principles simulation of a ceramic /Metal interface with misfit

The relaxed atomic structure of a model ceramic/metal interface, 222MgO/Cu, is simulated, including lattice constant mismatch, using first principles local-density functional theory plane wave pseudopotential methods. The 399-atom computational unit cell contains 36 O and 49 Cu atoms per layer in accordance with the 7/6 ratio of MgO to Cu lattice constants. The atomic layers on both sides of the interface warp to optimize the local bonding. The interface adhesive energy is calculated. The interface electronic structure is found to vary appreciably with the local environment.