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Fu X, Liang L, Wei Y. Characterization and Simulation of Nanoscale Catastrophic Failure of Metal/Ceramic Interfaces. ACS OMEGA 2023; 8:20313-20322. [PMID: 37323418 PMCID: PMC10268021 DOI: 10.1021/acsomega.2c07953] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 04/28/2023] [Indexed: 06/17/2023]
Abstract
The catastrophic failure of metal/ceramic interfaces is a complex process involving the energy transfer between accumulated elastic strain energy and many types of energy dissipation. To quantify the contribution of bulk and interface cohesive energy to the interface cleavage fracture without global plastic deformation, we characterized the quasi-static fracture process of both coherent and semi-coherent fcc-metal/MgO(001) interface systems using a spring series model and molecular static simulations. Our results show that the theoretical catastrophe point and spring-back length by the spring series model are basically consistent with the simulation results of the coherent interface systems. For defect interfaces with misfit dislocations, atomistic simulations revealed an obvious interface weakening effect in terms of reduced tensile strength and work of adhesion. As the model thickness increases, the tensile failure behaviors show significant scale effects-thick models tend to catastrophic failure with abrupt stress drop and obvious spring-back phenomenon. This work provides insight into the origin of catastrophic failure at metal/ceramic interfaces, which highlights a pathway by combining the material and structure design to improve the reliability of layered metal-ceramic composites.
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Affiliation(s)
- Xueqiong Fu
- Shenzhen
Institute of Advanced Electronic Materials, Shenzhen Institute of
Advanced Technology, Chinese Academy of
Sciences, Shenzhen 518055, China
| | - Lihong Liang
- College
of Mechanical and Electrical Engineering and Beijing Key Laboratory
of Health Monitoring and Self-Recovery for High-End Mechanical Equipment, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yueguang Wei
- College
of Engineering, Peking University, Beijing 100871, China
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Fu X. Nanostructure, Plastic Deformation, and Influence of Strain Rate Concerning Ni/Al 2O 3 Interface System Using a Molecular Dynamic Study (LAMMPS). NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:641. [PMID: 36839008 PMCID: PMC9967036 DOI: 10.3390/nano13040641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 01/31/2023] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The plastic deformation mechanisms of Ni/Al2O3 interface systems under tensile loading at high strain rates were investigated by the classical molecular dynamics (MD) method. A Rahman-Stillinger-Lemberg potential was used for modeling the interaction between Ni and Al atoms and between Ni and O atoms at the interface. To explore the dislocation nucleation and propagation mechanisms during interface tensile failure, two kinds of interface structures corresponding to the terminating Ni layer as buckling layer (Type I) and transition layer (Type II) were established. The fracture behaviors show a strong dependence on interface structure. For Type I interface samples, the formation of Lomer-Cottrell locks in metal causes strain hardening; for Type II interface samples, the yield strength is 40% higher than that of Type I due to more stable Ni-O bonds at the interface. At strain rates higher than 1×109 s-1, the formation of L-C locks in metal is suppressed (Type I), and the formation of Shockley dislocations at the interface is delayed (Type II). The present work provides the direct observation of nucleation, motion, and reaction of dislocations associated with the complex interface dislocation structures of Ni/Al2O3 interfaces and can help researchers better understand the deformation mechanisms of this interface at extreme conditions.
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Affiliation(s)
- Xueqiong Fu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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Veremchuk I, Liedke MO, Makushko P, Kosub T, Hedrich N, Pylypovskyi OV, Ganss F, Butterling M, Hübner R, Hirschmann E, Attallah AG, Wagner A, Wagner K, Shields B, Maletinsky P, Fassbender J, Makarov D. Defect Nanostructure and its Impact on Magnetism of α-Cr 2 O 3 Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201228. [PMID: 35344270 DOI: 10.1002/smll.202201228] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Thin films of the magnetoelectric insulator α-Cr2 O3 are technologically relevant for energy-efficient magnetic memory devices controlled by electric fields. In contrast to single crystals, the quality of thin Cr2 O3 films is usually compromised by the presence of point defects and their agglomerations at grain boundaries, putting into question their application potential. Here, the impact of the defect nanostructure, including sparse small-volume defects and their complexes is studied on the magnetic properties of Cr2 O3 thin films. By tuning the deposition temperature, the type, size, and relative concentration of defects is tailored, which is analyzed using the positron annihilation spectroscopy complemented with electron microscopy studies. The structural characterization is correlated with magnetotransport measurements and nitrogen-vacancy microscopy of antiferromagnetic domain patterns. Defects pin antiferromagnetic domain walls and stabilize complex multidomain states with a domain size in the sub-micrometer range. Despite their influence on the domain configuration, neither small open-volume defects nor grain boundaries in Cr2 O3 thin films affect the Néel temperature in a broad range of deposition parameters. The results pave the way toward the realization of spin-orbitronic devices where magnetic domain patterns can be tailored based on defect nanostructures without affecting their operation temperature.
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Affiliation(s)
- Igor Veremchuk
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Maciej Oskar Liedke
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Pavlo Makushko
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Tobias Kosub
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
- Tensor Instruments, HZDR Innovation GmbH, 01328, Dresden, Germany
| | - Natascha Hedrich
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, 4056, Switzerland
| | - Oleksandr V Pylypovskyi
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
- Kyiv Academic University, Kyiv, 03142, Ukraine
| | - Fabian Ganss
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Maik Butterling
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - René Hübner
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Eric Hirschmann
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Ahmed G Attallah
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Andreas Wagner
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Kai Wagner
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, 4056, Switzerland
| | - Brendan Shields
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, 4056, Switzerland
| | - Patrick Maletinsky
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, 4056, Switzerland
| | - Jürgen Fassbender
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Denys Makarov
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
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Gutekunst G, Mayer J, Vitek V, Rühle M. Atomic structure of epitaxial Nb-Al2O3interfaces II. Misfit dislocations. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418619708209860] [Citation(s) in RCA: 61] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- G. Gutekunst
- a Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft , Sesstrasse 92, 70174, Stuttgart , Germany
| | - J. Mayer
- a Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft , Sesstrasse 92, 70174, Stuttgart , Germany
| | - V. Vitek
- a Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft , Sesstrasse 92, 70174, Stuttgart , Germany
- b Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania , 19104 , USA
| | - M. Rühle
- a Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft , Sesstrasse 92, 70174, Stuttgart , Germany
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Benedek R, Alavi A, Seidman DN, Yang LH, Muller DA, Woodward C. First principles simulation of a ceramic /Metal interface with misfit. PHYSICAL REVIEW LETTERS 2000; 84:3362-3365. [PMID: 11019090 DOI: 10.1103/physrevlett.84.3362] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/1999] [Indexed: 05/23/2023]
Abstract
The relaxed atomic structure of a model ceramic/metal interface, 222MgO/Cu, is simulated, including lattice constant mismatch, using first principles local-density functional theory plane wave pseudopotential methods. The 399-atom computational unit cell contains 36 O and 49 Cu atoms per layer in accordance with the 7/6 ratio of MgO to Cu lattice constants. The atomic layers on both sides of the interface warp to optimize the local bonding. The interface adhesive energy is calculated. The interface electronic structure is found to vary appreciably with the local environment.
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Affiliation(s)
- R Benedek
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
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