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For:	Goetzberger A, Klausmann E, Schulz MJ. Interface states on semiconductor/insulator surfaces. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/10408437608243548] [Citation(s) in RCA: 103] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

Number

Cited by Other Article(s)

Carulla M, Barten R, Baruffaldi F, Bergamaschi A, Borghi G, Boscardin M, Brückner M, Butcher TA, Centis Vignali M, Dinapoli R, Ebner S, Ficorella F, Fröjdh E, Greiffenberg D, Hammad Ali O, Hasanaj S, Heymes J, Hinger V, King T, Kozlowski P, Lopez Cuenca C, Mezza D, Moustakas K, Mozzanica A, Paternoster G, Paton KA, Ronchin S, Ruder C, Schmitt B, Sieberer P, Thattil D, Vogelsang K, Xie X, Zhang J. Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection. SENSORS (BASEL, SWITZERLAND) 2024;24:942. [PMID: 38339659 PMCID: PMC10856868 DOI: 10.3390/s24030942] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 01/19/2024] [Accepted: 01/22/2024] [Indexed: 02/12/2024]

Affiliation(s)

Maria Carulla Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Rebecca Barten Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Filippo Baruffaldi Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Anna Bergamaschi Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Giacomo Borghi Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Maurizio Boscardin Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Martin Brückner Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Tim A. Butcher Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Matteo Centis Vignali Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Roberto Dinapoli Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Simon Ebner Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Francesco Ficorella Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Erik Fröjdh Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Dominic Greiffenberg Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Omar Hammad Ali Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Shqipe Hasanaj Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Julian Heymes Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Viktoria Hinger Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Thomas King Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Pawel Kozlowski Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Carlos Lopez Cuenca Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Davide Mezza Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Konstantinos Moustakas Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Aldo Mozzanica Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Giovanni Paternoster Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Kirsty A. Paton Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Sabina Ronchin Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
Christian Ruder Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Bernd Schmitt Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Patrick Sieberer Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Dhanya Thattil Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Konrad Vogelsang Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Xiangyu Xie Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
Jiaguo Zhang Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)

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Demirezen S, Ulusoy M, Durmuş H, Cavusoglu H, Yılmaz K, Altındal Ş. Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method. ACS OMEGA 2023;8:46499-46512. [PMID: 38107908 PMCID: PMC10720022 DOI: 10.1021/acsomega.3c04935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 11/14/2023] [Accepted: 11/20/2023] [Indexed: 12/19/2023]

Abstract

In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA-co-AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current-voltage (I-V) and capacitance/conductance-voltage (C/(G/ω)-V) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state (Nss) were probed by I-V and C-V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance (Rs) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity (R), sensitivity (S), and specific detectivity (D*), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

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Gao W, Xiao M, Chen B, Pun EYB, Chan CT, Tam WY. Controlling interface states in 1D photonic crystals by tuning bulk geometric phases. OPTICS LETTERS 2017;42:1500-1503. [PMID: 28409782 DOI: 10.1364/ol.42.001500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]

Barker P, Monkman A, Petty M, Pride R. Electrical characteristics of a polyaniline/silicon hybrid field-effect transistor gas sensor. ACTA ACUST UNITED AC 1997. [DOI: 10.1049/ip-cds:19971128] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]

Demoz A, Verpoorte EM, Harrison DJ. An equivalent circuit model of ion-selective membrane|insulator|semiconductor interfaces used for chemical sensors. J Electroanal Chem (Lausanne) 1995. [DOI: 10.1016/0022-0728(95)03836-6] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]

Evans N, Petty M, Roberts G. Interface state effects in Pd-gate mos hydrogen sensors. ACTA ACUST UNITED AC 1986. [DOI: 10.1016/0250-6874(86)80018-x] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]

H�lzlein K, Pensl G, Schulz M. Trap spectrum of the ?new oxygen donor? in silicon. ACTA ACUST UNITED AC 1984. [DOI: 10.1007/bf00616911] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]

Hübler A, Marton D. Energy Dependence of the Si-SiO2 Interface State Cross-Section Measured by the TSC Method. ACTA ACUST UNITED AC 1983. [DOI: 10.1002/pssa.2210770155] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]

Bársony I, Giber J. SIMS depth profiling for the characterization of Si-SiO2 structures. ACTA ACUST UNITED AC 1980. [DOI: 10.1016/0378-5963(80)90002-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]

Weyer G, Kettschau A, Grebe G, Schröter W, Bergholz W. Comparison of Mössbauer spectra of57Co in silicon for high-temperature ion-implanted and for diffused samples. ACTA ACUST UNITED AC 1979. [DOI: 10.1002/pssa.2210510218] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]