|
1
|
Carulla M, Barten R, Baruffaldi F, Bergamaschi A, Borghi G, Boscardin M, Brückner M, Butcher TA, Centis Vignali M, Dinapoli R, Ebner S, Ficorella F, Fröjdh E, Greiffenberg D, Hammad Ali O, Hasanaj S, Heymes J, Hinger V, King T, Kozlowski P, Lopez Cuenca C, Mezza D, Moustakas K, Mozzanica A, Paternoster G, Paton KA, Ronchin S, Ruder C, Schmitt B, Sieberer P, Thattil D, Vogelsang K, Xie X, Zhang J. Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection. Sensors (Basel) 2024; 24:942. [PMID: 38339659 PMCID: PMC10856868 DOI: 10.3390/s24030942] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 01/19/2024] [Accepted: 01/22/2024] [Indexed: 02/12/2024]
Abstract
Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, and large area. However, at energies below 3 keV, the detector performance is often limited because of the poor quantum efficiency of the sensor and the difficulty in achieving single-photon resolution due to the low signal-to-noise ratio. In this paper, we address the quantum efficiency of silicon sensors by refining the design of the entrance window, mainly by passivating the silicon surface and optimizing the dopant profile of the n+ region. We present the measurement of the quantum efficiency in the soft X-ray energy range for silicon sensors with several process variations in the fabrication of planar sensors with thin entrance windows. The quantum efficiency for 250 eV photons is increased from almost 0.5% for a standard sensor to up to 62% as a consequence of these developments, comparable to the quantum efficiency of backside-illuminated scientific CMOS sensors. Finally, we discuss the influence of the various process parameters on quantum efficiency and present a strategy for further improvement.
Collapse
Affiliation(s)
- Maria Carulla
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Rebecca Barten
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Filippo Baruffaldi
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Anna Bergamaschi
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Giacomo Borghi
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Maurizio Boscardin
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Martin Brückner
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Tim A. Butcher
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Matteo Centis Vignali
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Roberto Dinapoli
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Simon Ebner
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Francesco Ficorella
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Erik Fröjdh
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Dominic Greiffenberg
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Omar Hammad Ali
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Shqipe Hasanaj
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Julian Heymes
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Viktoria Hinger
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Thomas King
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Pawel Kozlowski
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Carlos Lopez Cuenca
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Davide Mezza
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Konstantinos Moustakas
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Aldo Mozzanica
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Giovanni Paternoster
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Kirsty A. Paton
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Sabina Ronchin
- Fondazione Bruno Kessler, Via Sommarive 18, 38126 Povo, Italy; (G.B.); (M.B.); (M.C.V.); (F.F.); (O.H.A.); (G.P.); (S.R.)
| | - Christian Ruder
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Bernd Schmitt
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Patrick Sieberer
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Dhanya Thattil
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Konrad Vogelsang
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Xiangyu Xie
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| | - Jiaguo Zhang
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, Switzerland (F.B.); (A.B.); (T.A.B.); (R.D.); (E.F.); (D.G.); (J.H.); (V.H.); (D.M.); (K.M.); (A.M.); (K.A.P.); (B.S.); (P.S.); (X.X.); (J.Z.)
| |
Collapse
|
|
2
|
Monaco V, Ali OH, Bersani D, Abujami M, Boscardin M, Cartiglia N, Betta GFD, Data E, Donetti M, Ferrero M, Ficorella F, Giordanengo S, Villarreal OAM, Milian FM, Mohammadian-Behbahani MR, Olivares DM, Pullia M, Tommasino F, Verroi E, Vignati A, Cirio R, Sacchi R. Performance of LGAD strip detectors for particle counting of therapeutic proton beams. Phys Med Biol 2023; 68:235009. [PMID: 37827167 DOI: 10.1088/1361-6560/ad02d5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2023] [Accepted: 10/12/2023] [Indexed: 10/14/2023]
Abstract
Objective. The performance of silicon detectors with moderate internal gain, named low-gain avalanche diodes (LGADs), was studied to investigate their capability to discriminate and count single beam particles at high fluxes, in view of future applications for beam characterization and on-line beam monitoring in proton therapy.Approach. Dedicated LGAD detectors with an active thickness of 55μm and segmented in 2 mm2strips were characterized at two Italian proton-therapy facilities, CNAO in Pavia and the Proton Therapy Center of Trento, with proton beams provided by a synchrotron and a cyclotron, respectively. Signals from single beam particles were discriminated against a threshold and counted. The number of proton pulses for fixed energies and different particle fluxes was compared with the charge collected by a compact ionization chamber, to infer the input particle rates.Main results. The counting inefficiency due to the overlap of nearby signals was less than 1% up to particle rates in one strip of 1 MHz, corresponding to a mean fluence rate on the strip of about 5 × 107p/(cm2·s). Count-loss correction algorithms based on the logic combination of signals from two neighboring strips allow to extend the maximum counting rate by one order of magnitude. The same algorithms give additional information on the fine time structure of the beam.Significance. The direct counting of the number of beam protons with segmented silicon detectors allows to overcome some limitations of gas detectors typically employed for beam characterization and beam monitoring in particle therapy, providing faster response times, higher sensitivity, and independence of the counts from the particle energy.
Collapse
Affiliation(s)
- Vincenzo Monaco
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | - Omar Hammad Ali
- Fondazione Bruno Kessler, Center for Sensors & Devices , Trento, Italy
| | - Davide Bersani
- Istituto Nazionale di Fisica Nucleare, sezione di Pisa, Italy
| | - Mohammed Abujami
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | - Maurizio Boscardin
- Fondazione Bruno Kessler, Center for Sensors & Devices , Trento, Italy
- Trento Institute for Fundamental Physics and Applications, Povo, Trento, Italy
| | | | - Gian Franco Dalla Betta
- Trento Institute for Fundamental Physics and Applications, Povo, Trento, Italy
- Università degli Studi di Trento, Trento, Italy
| | - Emanuele Data
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | - Marco Donetti
- CNAO, Centro Nazionale di Adroterapia Oncologica, Pavia, Italy
| | - Marco Ferrero
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | | | | | | | - Felix Mas Milian
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
- Universidade Estadual de Santa Cruz, Department of Exact and Technological Sciences, Ilhéus, Brazil
| | | | - Diango Montalvan Olivares
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | - Marco Pullia
- CNAO, Centro Nazionale di Adroterapia Oncologica, Pavia, Italy
| | - Francesco Tommasino
- Trento Institute for Fundamental Physics and Applications, Povo, Trento, Italy
- Università degli Studi di Trento, Trento, Italy
| | - Enrico Verroi
- Trento Institute for Fundamental Physics and Applications, Povo, Trento, Italy
| | - Anna Vignati
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | - Roberto Cirio
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| | - Roberto Sacchi
- Università degli Studi di Torino, via Pietro Giuria 1, I-10125 Torino, Italy
- Istituto Nazionale di Fisica Nucleare, sezione di Torino, Italy
| |
Collapse
|
|
3
|
Bagolini A, Sitar A, Porcelli L, Boscardin M, Dell’Agnello S, Delle Monache G. High Frequency MEMS Capacitive Mirror for Space Applications. Micromachines (Basel) 2023; 14:mi14010158. [PMID: 36677219 PMCID: PMC9867498 DOI: 10.3390/mi14010158] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 01/02/2023] [Accepted: 01/03/2023] [Indexed: 06/01/2023]
Abstract
Free space optics laser communication using modulating retroreflectors (MR) is a challenging application for an active mirror, due to the high frequencies (>100 kHz) required to enable sufficient data transfer. Micro Electromechanical (MEMS) mirrors are a promising option for high-frequency applications, given the very small moving mass typical of such devices. Capacitive MEMS mirrors are presented here for free space communications, based on a novel fabrication sequence that introduces a single-layer thin film aluminum mirror structure with an underlying silicon oxide sacrificial layer. The use of aluminum instead of gold as a mirror layer diminishes the heating generated by the absorption of the sun’s radiation once the mirrors exit the earth’s atmosphere. Thanks to the novel fabrication sequence, the presented mirror devices have a full range actuation voltage of less than 40 V, and a high operational frequency with an eigenfrequency above 2 MHz. The devices were manufactured and characterized, and their main parameters were obtained from experimental data combined with finite element analysis, thus enabling future design optimization of the reported MEMS technology. By optical characterization of the far field diffraction pattern, good mirror performance was demonstrated.
Collapse
Affiliation(s)
- Alvise Bagolini
- Center for Sensors and Devices (SD), Fondazione Bruno Kessler (FBK), Via Sommarive 18, 38123 Trento, Italy
| | - Anze Sitar
- Center for Sensors and Devices (SD), Fondazione Bruno Kessler (FBK), Via Sommarive 18, 38123 Trento, Italy
| | - Luca Porcelli
- Istituto Nazionale di Fisica Nucleare-Laboratori Nazionali di Frascati (INFN-LNF), Via E. Fermi 40, 00044 Frascati, Italy
- Dipartimento di Fisica, Università della Calabria (Unical), Via Pietro Bucci, Arcavacata, 87036 Rende, Italy
| | - Maurizio Boscardin
- Center for Sensors and Devices (SD), Fondazione Bruno Kessler (FBK), Via Sommarive 18, 38123 Trento, Italy
| | - Simone Dell’Agnello
- Istituto Nazionale di Fisica Nucleare-Laboratori Nazionali di Frascati (INFN-LNF), Via E. Fermi 40, 00044 Frascati, Italy
| | - Giovanni Delle Monache
- Istituto Nazionale di Fisica Nucleare-Laboratori Nazionali di Frascati (INFN-LNF), Via E. Fermi 40, 00044 Frascati, Italy
| |
Collapse
|
|
4
|
Peverini F, Bizzarri M, Boscardin M, Calcagnile L, Caprai M, Caricato AP, Cirrone GAP, Crivellari M, Cuttone G, Dunand S, Fanò L, Gianfelici B, Hammad O, Ionica M, Kanxheri K, Large M, Maruccio G, Menichelli M, Monteduro AG, Moscatelli F, Morozzi A, Pallotta S, Papi A, Passeri D, Petasecca M, Petringa G, Pis I, Quarta G, Rizzato S, Rossi A, Rossi G, Scorzoni A, Soncini C, Servoli L, Tacchi S, Talamonti C, Verzellesi G, Wyrsch N, Zema N, Pedio M. High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices. Nanomaterials (Basel) 2022; 12:3466. [PMID: 36234601 PMCID: PMC9565300 DOI: 10.3390/nano12193466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 09/20/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies.
Collapse
Affiliation(s)
- Francesca Peverini
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Marco Bizzarri
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Maurizio Boscardin
- INFN (Istituto Nazionale di Fisica Nucleare), TIPFA (Trento Institute for Fundamental Physics and Applications), Via Sommarive 14, 38123 Trento, Italy
- Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, Italy
| | - Lucio Calcagnile
- CEDAD-Centro di Fisica Applicata, Datazione e Diagnostica, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento e INFN-Sezione di Lecce, 73100 Lecce, Italy
| | - Mirco Caprai
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Anna Paola Caricato
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | | | | | - Giacomo Cuttone
- INFN (Istituto Nazionale di Fisica Nucleare) Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, Italy
| | - Sylvain Dunand
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland
| | - Livio Fanò
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Benedetta Gianfelici
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Omar Hammad
- Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, Italy
| | - Maria Ionica
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Keida Kanxheri
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Matthew Large
- Centre for Medical Radiation Physics, University of Wollongong, Northfields Ave, Wollongong, NSW 2522, Australia
| | - Giuseppe Maruccio
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | - Mauro Menichelli
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Anna Grazia Monteduro
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | - Francesco Moscatelli
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Istituto Officina dei Materiali-CNR, Basovizza SS-14, km 163.5, 34012 Trieste, Italy
| | - Arianna Morozzi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Stefania Pallotta
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica Scienze Biomediche Sperimentali e Cliniche “Mario Serio”, Viale Morgagni 50, 50135 Firenze, Italy
| | - Andrea Papi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Daniele Passeri
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Ingegneria, Università Degli Studi di Perugia, via G.Duranti, 06125 Perugia, Italy
| | - Marco Petasecca
- Centre for Medical Radiation Physics, University of Wollongong, Northfields Ave, Wollongong, NSW 2522, Australia
| | - Giada Petringa
- INFN (Istituto Nazionale di Fisica Nucleare) Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania, Italy
| | - Igor Pis
- IOM-CNR, Istituto Officina dei Materiali, AREA Science Park Basovizza, 34149 Trieste, Italy
| | - Gianluca Quarta
- CEDAD-Centro di Fisica Applicata, Datazione e Diagnostica, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento e INFN-Sezione di Lecce, 73100 Lecce, Italy
| | - Silvia Rizzato
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica e Matematica dell’Università del Salento, Via per Arnesano, 73100 Lecce, Italy
| | - Alessandro Rossi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Giulia Rossi
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Andrea Scorzoni
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Dipartimento di Ingegneria, Università Degli Studi di Perugia, via G.Duranti, 06125 Perugia, Italy
| | - Cristian Soncini
- Istituto Officina dei Materiali-CNR, Basovizza SS-14, km 163.5, 34012 Trieste, Italy
| | - Leonello Servoli
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
| | - Silvia Tacchi
- Istituto Officina dei Materiali-CNR, Basovizza SS-14, km 163.5, 34012 Trieste, Italy
| | - Cinzia Talamonti
- INFN (Istituto Nazionale di Fisica Nucleare) and Dipartimento di Fisica Scienze Biomediche Sperimentali e Cliniche “Mario Serio”, Viale Morgagni 50, 50135 Firenze, Italy
| | - Giovanni Verzellesi
- INFN (Istituto Nazionale di Fisica Nucleare), TIPFA (Trento Institute for Fundamental Physics and Applications), Via Sommarive 14, 38123 Trento, Italy
- Dipartimento di Scienze e Metodi dell’Ingegneria, Università di Modena e Reggio Emilia, Via Amendola 2, 42122 Reggio Emilia, Italy
| | - Nicolas Wyrsch
- Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering (IME), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland
| | - Nicola Zema
- Istituto di Struttura della Materia-CNR, Via Fosso del Cavaliere 100, 00133 Roma, Italy
| | - Maddalena Pedio
- INFN (Istituto Nazionale di Fisica Nucleare), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy
- Istituto Officina dei Materiali-CNR, Via Pascoli s.n.c., 06123 Perugia, Italy
| |
Collapse
|
|
5
|
Scagliotti M, Salvato M, De Crescenzi M, Mishra N, Fabbri F, Miseikis V, Coletti C, Catone D, Di Mario L, Boscardin M, Castrucci P. Large-area, high-responsivity, fast and broadband graphene/n-Si photodetector. Nanotechnology 2021; 32:155504. [PMID: 33378748 DOI: 10.1088/1361-6528/abd789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A graphene/Si heterojunction device has been realized to overcome many different requests necessary to make it a versatile, widely used and competitive detector. The obtained photodetectors, which operate at room temperature, are sensitive in the spectral region from ultraviolet (240 nm) to infrared (2000 nm) and they can be used in different configurations that allow a high responsivity up to 107 A W-1, a rise time of a few nanoseconds, an external quantum efficiency greater than 300%, and a linear response for different light sources. This is allowed by the high quality of the graphene deposited on a large area of 8 mm2, and by the interdigitated design of the contacts, both preserving the excellent properties of graphene when switching from nanoscale to macroscopic dimensions of commonly used devices.
Collapse
Affiliation(s)
- Mattia Scagliotti
- Dipartimento di Fisica, Università di Roma 'Tor Vergata', 00133 Roma, Italy
- INFN, Università di Roma 'Tor Vergata', 00133 Roma, Italy
| | - Matteo Salvato
- Dipartimento di Fisica, Università di Roma 'Tor Vergata', 00133 Roma, Italy
- INFN, Università di Roma 'Tor Vergata', 00133 Roma, Italy
- CNR-SPIN Salerno, Università degli Studi di Salerno, 84084 Fisciano, Italy
| | - Maurizio De Crescenzi
- Dipartimento di Fisica, Università di Roma 'Tor Vergata', 00133 Roma, Italy
- INFN, Università di Roma 'Tor Vergata', 00133 Roma, Italy
| | - Neeraj Mishra
- CNI@NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - Filippo Fabbri
- NEST, Scuola Normale Superiore, Istituto Nanoscienze-CNR, 56127 Pisa, Italy
| | - Vaidotas Miseikis
- CNI@NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - Camilla Coletti
- CNI@NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | - Daniele Catone
- Istituto di Struttura della Materia-CNR (ISM-CNR), Division of Ultrafast Processes in Materials (FLASHit), 00133 Rome, Italy
| | - Lorenzo Di Mario
- Istituto di Struttura della Materia-CNR (ISM-CNR), Division of Ultrafast Processes in Materials (FLASHit), 00133 Rome, Italy
| | - Maurizio Boscardin
- Micro-Nano Characterization and Fabrication Facility, Fondazione Bruno Kessler (FBK), 38123 Povo-Trento, Italy
| | - Paola Castrucci
- Dipartimento di Fisica, Università di Roma 'Tor Vergata', 00133 Roma, Italy
- INFN, Università di Roma 'Tor Vergata', 00133 Roma, Italy
| |
Collapse
|
|
6
|
Cutarelli A, Ghio S, Zasso J, Speccher A, Scarduelli G, Roccuzzo M, Crivellari M, Maria Pugno N, Casarosa S, Boscardin M, Conti L. Vertically-Aligned Functionalized Silicon Micropillars for 3D Culture of Human Pluripotent Stem Cell-Derived Cortical Progenitors. Cells 2019; 9:E88. [PMID: 31905823 PMCID: PMC7017050 DOI: 10.3390/cells9010088] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2019] [Revised: 12/18/2019] [Accepted: 12/23/2019] [Indexed: 02/06/2023] Open
Abstract
Silicon is a promising material for tissue engineering since it allows to produce micropatterned scaffolding structures resembling biological tissues. Using specific fabrication methods, it is possible to build aligned 3D network-like structures. In the present study, we exploited vertically-aligned silicon micropillar arrays as culture systems for human iPSC-derived cortical progenitors. In particular, our aim was to mimic the radially-oriented cortical radial glia fibres that during embryonic development play key roles in controlling the expansion, radial migration and differentiation of cortical progenitors, which are, in turn, pivotal to the establishment of the correct multilayered cerebral cortex structure. Here we show that silicon vertical micropillar arrays efficiently promote expansion and stemness preservation of human cortical progenitors when compared to standard monolayer growth conditions. Furthermore, the vertically-oriented micropillars allow the radial migration distinctive of cortical progenitors in vivo. These results indicate that vertical silicon micropillar arrays can offer an optimal system for human cortical progenitors' growth and migration. Furthermore, similar structures present an attractive platform for cortical tissue engineering.
Collapse
Affiliation(s)
- Alessandro Cutarelli
- Laboratory of Stem Cell Biology, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (A.C.); (J.Z.)
| | - Simone Ghio
- Fondazione Bruno Kessler-Center for Material and Microsystem, 38123 Trento, Italy; (S.G.); (M.C.)
| | - Jacopo Zasso
- Laboratory of Stem Cell Biology, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (A.C.); (J.Z.)
| | - Alessandra Speccher
- Laboratory of Neural Development and Regeneration, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (A.S.); (S.C.)
| | - Giorgina Scarduelli
- Advanced Imaging Facility, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (G.S.); (M.R.)
| | - Michela Roccuzzo
- Advanced Imaging Facility, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (G.S.); (M.R.)
| | - Michele Crivellari
- Fondazione Bruno Kessler-Center for Material and Microsystem, 38123 Trento, Italy; (S.G.); (M.C.)
| | - Nicola Maria Pugno
- Laboratory of Bio-Inspired and Graphene Nanomechanics, Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 Trento, Italy;
- School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK
- Ket-Lab, Edoardo Amaldi Foundation, via del Politecnico snc, I-00133 Roma, Italy
| | - Simona Casarosa
- Laboratory of Neural Development and Regeneration, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (A.S.); (S.C.)
| | - Maurizio Boscardin
- Fondazione Bruno Kessler-Center for Material and Microsystem, 38123 Trento, Italy; (S.G.); (M.C.)
| | - Luciano Conti
- Laboratory of Stem Cell Biology, Department of Cellular, Computational and Integrative Biology-CIBIO, University of Trento, 38123 Trento, Italy; (A.C.); (J.Z.)
| |
Collapse
|
|
7
|
Andrä M, Zhang J, Bergamaschi A, Barten R, Borca C, Borghi G, Boscardin M, Busca P, Brückner M, Cartiglia N, Chiriotti S, Dalla Betta GF, Dinapoli R, Fajardo P, Ferrero M, Ficorella F, Fröjdh E, Greiffenberg D, Huthwelker T, Lopez-Cuenca C, Meyer M, Mezza D, Mozzanica A, Pancheri L, Paternoster G, Redford S, Ruat M, Ruder C, Schmitt B, Shi X, Sola V, Thattil D, Tinti G, Vetter S. Development of low-energy X-ray detectors using LGAD sensors. J Synchrotron Radiat 2019; 26:1226-1237. [PMID: 31274448 DOI: 10.1107/s1600577519005393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2018] [Accepted: 04/19/2019] [Indexed: 06/09/2023]
Abstract
Recent advances in segmented low-gain avalanche detectors (LGADs) make them promising for the position-sensitive detection of low-energy X-ray photons thanks to their internal gain. LGAD microstrip sensors fabricated by Fondazione Bruno Kessler have been investigated using X-rays with both charge-integrating and single-photon-counting readout chips developed at the Paul Scherrer Institut. In this work it is shown that the charge multiplication occurring in the sensor allows the detection of X-rays with improved signal-to-noise ratio in comparison with standard silicon sensors. The application in the tender X-ray energy range is demonstrated by the detection of the sulfur Kα and Kβ lines (2.3 and 2.46 keV) in an energy-dispersive fluorescence spectrometer at the Swiss Light Source. Although further improvements in the segmentation and in the quantum efficiency at low energy are still necessary, this work paves the way for the development of single-photon-counting detectors in the soft X-ray energy range.
Collapse
Affiliation(s)
- Marie Andrä
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Jiaguo Zhang
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Anna Bergamaschi
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Rebecca Barten
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Camelia Borca
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Giacomo Borghi
- Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, Italy
| | | | - Paolo Busca
- European Synchrotron Radiation Facility, Grenoble, France
| | - Martin Brückner
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | | | - Sabina Chiriotti
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | | | - Roberto Dinapoli
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Pablo Fajardo
- European Synchrotron Radiation Facility, Grenoble, France
| | - Marco Ferrero
- INFN Torino, Via Pietro Giuria 1, 10125 Torino, Italy
| | | | - Erik Fröjdh
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | | | - Thomas Huthwelker
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Carlos Lopez-Cuenca
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Markus Meyer
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Davide Mezza
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Aldo Mozzanica
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Lucio Pancheri
- University of Trento, Via Sommarive 9, 38123 Trento, Italy
| | | | - Sophie Redford
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Marie Ruat
- European Synchrotron Radiation Facility, Grenoble, France
| | - Christian Ruder
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Bernd Schmitt
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Xintian Shi
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | | | - Dhanya Thattil
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Gemma Tinti
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Seraphin Vetter
- Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| |
Collapse
|
|
8
|
Scagliotti M, Salvato M, De Crescenzi M, Castrucci P, Kovalchuk NG, Komissarov IV, Prischepa SL, Catone D, Di Mario L, Boscardin M, Crivellari M. 2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector. Int J Nanosci 2019. [DOI: 10.1142/s0219581x1940088x] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275[Formula: see text]nm) to infrared (1150[Formula: see text]nm). Applying a gate voltage [Formula: see text], the rise time decreases down to about 1[Formula: see text]ns, making our devices comparable to most commercial PDs.
Collapse
Affiliation(s)
- M. Scagliotti
- Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - M. Salvato
- Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - M. De Crescenzi
- Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - P. Castrucci
- Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - N. G. Kovalchuk
- Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus
| | - I. V. Komissarov
- Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus
| | - S. L. Prischepa
- Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus
| | - D. Catone
- Istituto di Struttura della Materia (ISM), CNR, Division of Ultrafast Processes in Materials (FLASHit), Via del Fosso del Cavaliere 100, 00133 Rome, Italy
| | - L. Di Mario
- Istituto di Struttura della Materia (ISM), CNR, Division of Ultrafast Processes in Materials (FLASHit), Via del Fosso del Cavaliere 100, 00133 Rome, Italy
| | - M. Boscardin
- Micro-nano Characterization and Fabrication, Facility Fondazione Bruno Kessler (FBK), Via Sommarive 18, 38123 Povo-Trento, Italy
| | - M. Crivellari
- Micro-nano Characterization and Fabrication, Facility Fondazione Bruno Kessler (FBK), Via Sommarive 18, 38123 Povo-Trento, Italy
| |
Collapse
|
|
9
|
Tudisco S, La Via F, Agodi C, Altana C, Borghi G, Boscardin M, Bussolino G, Calcagno L, Camarda M, Cappuzzello F, Carbone D, Cascino S, Casini G, Cavallaro M, Ciampi C, Cirrone G, Cuttone G, Fazzi A, Giove D, Gorini G, Labate L, Lanzalone G, Litrico G, Longo G, Lo Presti D, Mauceri M, Modica R, Moschetti M, Muoio A, Musumeci F, Pasquali G, Petringa G, Piluso N, Poggi G, Privitera S, Puglia S, Puglisi V, Rebai M, Ronchin S, Santangelo A, Stefanini A, Trifirò A, Zimbone M. SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications. Sensors (Basel) 2018; 18:s18072289. [PMID: 30011947 PMCID: PMC6068936 DOI: 10.3390/s18072289] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/16/2018] [Revised: 07/06/2018] [Accepted: 07/11/2018] [Indexed: 11/16/2022]
Abstract
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.
Collapse
Affiliation(s)
- Salvatore Tudisco
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Francesco La Via
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
- Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), VIII Strada, 5, 95121 Catania, Italy.
| | - Clementina Agodi
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Carmen Altana
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Giacomo Borghi
- Trento Institute for Fundamental Physics and Applications (TIFPA), National Institute for Nuclear Physics (INFN), Fondazione Bruno Kessler (FBK-Trento), Via Sommarive 14, 38123 Povo Trento, Italy.
| | - Maurizio Boscardin
- Trento Institute for Fundamental Physics and Applications (TIFPA), National Institute for Nuclear Physics (INFN), Fondazione Bruno Kessler (FBK-Trento), Via Sommarive 14, 38123 Povo Trento, Italy.
| | - Giancarlo Bussolino
- Istituto Nazionale di Ottica (INO), Consiglio Nazionale delle Ricerche (CNR), Via G. Moruzzi 1, 56124 Pisa, Italy.
| | - Lucia Calcagno
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Catania, Italy.
- Department of Physics and Astronomy, University of Catania, Via S. Sofia 64 Catania, Italy.
| | - Massimo Camarda
- Paul Scherrer Institute, ODRA/116, 5232 Villigen, Switzerland.
| | - Francesco Cappuzzello
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
- Department of Physics and Astronomy, University of Catania, Via S. Sofia 64 Catania, Italy.
| | - Diana Carbone
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | | | - Giovanni Casini
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
| | - Manuela Cavallaro
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Caterina Ciampi
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
- Dipartimento di Fisica, Università di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
| | - Giuseppe Cirrone
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Giacomo Cuttone
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Alberto Fazzi
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Milano, Department of Energy, Politecnico di Milano, Via Celoria 16, 20133 Milano, Italy.
| | - Dario Giove
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Milano, Department of Energy, Politecnico di Milano, Via Celoria 16, 20133 Milano, Italy.
| | - Giuseppe Gorini
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Milano Bicocca, Department of Physics, Università degli Studi di Milano-Bicocca, Piazza della Scienza 3, 20126 Milano, Italy.
| | - Luca Labate
- Istituto Nazionale di Ottica (INO), Consiglio Nazionale delle Ricerche (CNR), Via G. Moruzzi 1, 56124 Pisa, Italy.
| | - Gaetano Lanzalone
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
- Facoltà di Ingegneria e Architettura, Università Kore, Cittadella Universitaria, 94100 Enna, Italy.
| | | | - Giuseppe Longo
- STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy.
| | - Domenico Lo Presti
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Catania, Italy.
- Department of Physics and Astronomy, University of Catania, Via S. Sofia 64 Catania, Italy.
| | | | - Roberto Modica
- STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy.
| | | | - Annamaria Muoio
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Franco Musumeci
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
- Department of Physics and Astronomy, University of Catania, Via S. Sofia 64 Catania, Italy.
| | - Gabriele Pasquali
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
- Dipartimento di Fisica, Università di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
| | - Giada Petringa
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
- Department of Physics and Astronomy, University of Catania, Via S. Sofia 64 Catania, Italy.
| | - Nicolò Piluso
- STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy.
| | - Giacomo Poggi
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
- Dipartimento di Fisica, Università di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
| | - Stefania Privitera
- Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), VIII Strada, 5, 95121 Catania, Italy.
| | - Sebastiana Puglia
- Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy.
| | - Valeria Puglisi
- STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy.
| | - Marica Rebai
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Milano Bicocca, Department of Physics, Università degli Studi di Milano-Bicocca, Piazza della Scienza 3, 20126 Milano, Italy.
| | - Sabina Ronchin
- Trento Institute for Fundamental Physics and Applications (TIFPA), National Institute for Nuclear Physics (INFN), Fondazione Bruno Kessler (FBK-Trento), Via Sommarive 14, 38123 Povo Trento, Italy.
| | | | - Andrea Stefanini
- Istituto Nazionale di Fisica Nucleare (INFN)-Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
- Dipartimento di Fisica, Università di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy.
| | - Antonio Trifirò
- Dipartimento di Scienze MIFT dell'Universitá di Messina, V.le F. S. D'Alcontres 31, 98166 Massina, Italy.
| | - Massimo Zimbone
- Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), VIII Strada, 5, 95121 Catania, Italy.
| |
Collapse
|
|
10
|
Scagliotti M, Salvato M, De Crescenzi M, Boscardin M, Castrucci P. Influence of the contact geometry on single-walled carbon nanotube/Si photodetector response. Appl Nanosci 2018. [DOI: 10.1007/s13204-018-0720-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
|
|
11
|
Pintossi C, Pagliara S, Drera G, De Nicola F, Castrucci P, De Crescenzi M, Crivellari M, Boscardin M, Sangaletti L. Steering the efficiency of carbon nanotube-silicon photovoltaic cells by acid vapor exposure: a real-time spectroscopic tracking. ACS Appl Mater Interfaces 2015; 7:9436-9444. [PMID: 25902284 DOI: 10.1021/am508973b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Hybrid carbon nanotube-silicon (CNT-Si) junctions have been investigated by angle resolved photoemission spectroscopy (AR-XPS) with the aim to clarify the effects of a nonstoichiometric silicon oxide buried interface on the overall cell efficiency. A complex silicon oxide interface has been clearly identified and its origin and role in the heterojunction have been probed by exposing the cells to hydrofluoric (HF) and nitric (HNO3) acid. Real-time monitoring of the cell efficiencies during the steps following acid exposure (up to 1 week after etching) revealed a correlation between the thickness and chemical state of the oxide layer and the cell efficiencies. By matching the AR-XPS and Raman spectroscopy with the electrical response data it has been possible to discriminate the effects on the cell efficiency of the buried SiO(x) interface from those related to CNT acid doping. The overall cell behavior recorded for different thicknesses of the SiO(x) interface indicates that the buried oxide layer is likely acting as a passivating/inversion layer in a metal-insulator-semiconductor junction.
Collapse
Affiliation(s)
- C Pintossi
- †Interdisciplinary Laboratories for Advanced Materials Physics (I-LAMP) and Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, I-25121 Brescia, Italy
| | - S Pagliara
- †Interdisciplinary Laboratories for Advanced Materials Physics (I-LAMP) and Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, I-25121 Brescia, Italy
| | - G Drera
- †Interdisciplinary Laboratories for Advanced Materials Physics (I-LAMP) and Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, I-25121 Brescia, Italy
| | - F De Nicola
- ‡Dipartimento di Fisica, Università degli Studi di Roma Tor Vergata, I-00133 Rome, Italy
- §Istituto Nazionale di Fisica Nucleare, Università di Roma Tor Vergata (INFN-Roma Tor Vergata), I-00133, Rome, Italy
| | - P Castrucci
- ‡Dipartimento di Fisica, Università degli Studi di Roma Tor Vergata, I-00133 Rome, Italy
- §Istituto Nazionale di Fisica Nucleare, Università di Roma Tor Vergata (INFN-Roma Tor Vergata), I-00133, Rome, Italy
| | - M De Crescenzi
- ‡Dipartimento di Fisica, Università degli Studi di Roma Tor Vergata, I-00133 Rome, Italy
- §Istituto Nazionale di Fisica Nucleare, Università di Roma Tor Vergata (INFN-Roma Tor Vergata), I-00133, Rome, Italy
| | - M Crivellari
- ∥Fondazione Bruno Kessler, I-38100 Trento, Italy
| | - M Boscardin
- ∥Fondazione Bruno Kessler, I-38100 Trento, Italy
| | - L Sangaletti
- †Interdisciplinary Laboratories for Advanced Materials Physics (I-LAMP) and Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, I-25121 Brescia, Italy
| |
Collapse
|
|
12
|
Aramo C, Ambrosio A, Ambrosio M, Boscardin M, Castrucci P, Crivellari M, Cilmo M, De Crescenzi M, De Nicola F, Fiandrini E, Grossi V, Maddalena P, Passacantando M, Santucci S, Scarselli M, Valentini A. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction. Beilstein J Nanotechnol 2015; 6:704-710. [PMID: 25821710 PMCID: PMC4362292 DOI: 10.3762/bjnano.6.71] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2014] [Accepted: 02/12/2015] [Indexed: 06/04/2023]
Abstract
A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.
Collapse
Affiliation(s)
- Carla Aramo
- INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli, Italy
| | - Antonio Ambrosio
- CNR-SPIN U.O.S. di Napoli and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli, Italy
| | | | - Maurizio Boscardin
- Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Trento, Via Sommarive 18, 38123 Povo di Trento, Italy
| | - Paola Castrucci
- INFN, Sezione di Roma “Tor Vergata”, Dipartimento di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Michele Crivellari
- Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Trento, Via Sommarive 18, 38123 Povo di Trento, Italy
| | - Marco Cilmo
- INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli, Italy
| | - Maurizio De Crescenzi
- INFN, Sezione di Roma “Tor Vergata”, Dipartimento di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Francesco De Nicola
- INFN, Sezione di Roma “Tor Vergata”, Dipartimento di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Emanuele Fiandrini
- INFN, Sezione di Perugia, Dipartimento di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia, Italy
| | - Valentina Grossi
- INFN, Sezione di L’Aquila, Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, Italy
| | - Pasqualino Maddalena
- INFN, Sezione di Napoli and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli, Italy
| | - Maurizio Passacantando
- INFN, Sezione di L’Aquila, Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, Italy
| | - Sandro Santucci
- INFN, Sezione di L’Aquila, Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, Via Vetoio, 67100 Coppito, L’Aquila, Italy
| | - Manuela Scarselli
- INFN, Sezione di Roma “Tor Vergata”, Dipartimento di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Antonio Valentini
- INFN, Sezione di Bari and Dipartimento di Fisica, Università degli Studi di Bari, Via Amendola 173, 70126 Bari, Italy
| |
Collapse
|