Metallogel of bis(tetrazole)-appended pyridine derivative with CoBr2 as a chemoprobe for volatile gases containing chloride atom

Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing

A rapid metallohydrogelation strategy has been developed of magnesium(II)-ion using trimethylamine as a low molecular weight gelator in water medium at room temperature. The mechanical property of the synthesized metallohydrogel material is established through the rheological analysis. The nano-rose like morphological patterns of Mg(II)-metallohydrogel are characterized through field emission scanning electron microscopic study. The energy dispersive X-ray elemental mapping analysis confirms the primary gel forming elements of Mg(II)-metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic study. In this work, magnesium(II) metallohydrogel (Mg@TMA) based metal-semiconductor-metal structures have been developed and charge transport behaviour is studied. Here, it is confirmed that the magnesium(II) metallohydrogel (Mg@TMA) based resistive random access memory (RRAM) device is showing bipolar resistive switching behaviour at room temperature. We have also explored the mechanism of resistive switching behaviour using the formation (rupture) of conductive filaments between the metal electrodes. This RRAM devices exhibit excellent switching endurance over 10,000 switching cycles with a large ON/OFF ratio (~ 100). The easy fabrication techniques, robust resistive switching behaviour and stability of the present system makes these structures preferred candidate for applications in non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics etc.

A 5-aminoisophthalic acid low molecular weight gelator based novel semiconducting supramolecular Zn(ii)-metallogel: unlocking an efficient Schottky barrier diode for microelectronics

A novel method has been successfully developed for creating supramolecular metallogels using zinc(ii) ions and 5-aminoisophthalic acid as the gelator (low molecular weight gelator) in a dimethylformamide (DMF) solvent at room temperature. Comprehensive rheological investigations confirm the robust mechanical strength of the resulting zinc(ii)-metallogel. Microstructural analysis conducted through field-emission scanning electron microscopy (FESEM) unveils a unique flake-like morphology, with energy-dispersive X-ray (EDX) elemental mapping confirming the prevalence of zinc as the primary constituent of the metallogel. To understand the formation mechanism of this metallogel, Fourier-transform infrared (FT-IR) spectroscopy was employed. Notably, these supramolecular zinc(ii)-metallogel assemblies exhibit electrical conductivity reminiscent of metal-semiconductor (MS) junction electronic components. Surprisingly, the metallogel-based thin film device showcases an impressive electrical conductivity of 1.34 × 10-5 S m-1. The semiconductor characteristics of the synthesized zinc(ii)-metallogel devices, including their Schottky barrier diode properties, have been extensively investigated. This multifaceted study opens up a promising avenue for designing functional materials tailored for electronic applications. It harnesses the synergistic properties of supramolecular metallogels and highlights their significant potential in the development of semiconductor devices. This work represents a novel approach to the creation of advanced materials with unique electronic properties, offering exciting prospects for future innovations in electronic and semiconductor technologies.

A multistimulus-responsive self-healable supramolecular copper(ii)-metallogel derived from l-(+) tartaric acid: an efficient Schottky barrier diode

A low molecular weight gelator l-(+) tartaric acid- based self-healing supramolecular Cu(ii)-metallogel offers an electronic device of Schottky barrier diode at room temperature.

Triethylenetetramine-Based Semiconducting Fe(III) Metallogel: Effective Catalyst for Aryl-S Coupling

A fascinating way to originate a mechanically stable metallogel of ferric ions with metal-coordinating organic ligand triethylenetetramine through direct mixing of their water solutions in a stoichiometric ratio is achieved under ambient conditions. The rheological study established the mechanical property of the Fe(III) metallogel. A cashew-shaped microstructure of the metallogel was observed by FESEM analysis. The electrical property of the Fe(III) metallogel was also carefully scrutinized. The semiconducting features like the Schottky barrier diode property of the Fe(III) metallogel were explored. The catalytic role of the Fe(III) metallogel was also critically explored. The Fe(III) metallogel shows an excellent catalytic property toward the synthesis of aryl thioethers via a C-S coupling reaction under mild reaction conditions without the use of any organic solvent.

5-(2-Pyridil)-1H-tetrazole complexes with Mo(iv) and W(iv) cyanides

The reactions of tetrazole ligand derived from 2-cyanopyridine with K₃Na[Mo(CN)₄O₂]·6H₂O and K₃Na[W(CN)₄O₂]·6H₂O in water–ethanol solution result in isolation of two new complexes with the following formulae: (PPh₄)₂[Mo(CN)₃O(pdt)]·2H₂O (1) (Hpdt = 5-(2-pyridil)-1H-tetrazole) and (PPh₄)₂[W(CN)₃O(pdt)]·3H₂O (2).