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Shkvarin A, Merentsov A, Postnikov M, Shkvarina E, Volegov A, Pryanichnikov S, Zayats P, Lebedev A, Chumakov R, Titov A. Electronic and Crystal Structure of New Cr xZrSe 2 Intercalation Compounds. Inorg Chem 2024; 63:934-946. [PMID: 38175815 DOI: 10.1021/acs.inorgchem.3c02114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
New intercalation compounds CrxZrSe2 were synthesized and thoroughly studied. Cr atoms were found to occupy the positions both tetrahedrally and octahedrally coordinated by the Se atoms in the interlayer gap. The magnetic properties and electrical resistivity were studied in the temperature ranges of 2.4-300 K and 80-340 K, respectively. The compounds change their behavior from semiconducting (x = 0.1) to metallic (x > 0.1). The magnetic interaction strongly depends on the Cr content and temperature. The spin-glass state with antiferromagnetic interaction exists at T < Tcrit for CrxZrSe2 with x ≤ 0.2, while at x ≥ 0.3 ferromagnetic contribution arises as well. The single crystals of CrxZrSe2 were grown to study the electronic structure of the materials. A combination of the X-ray photoelectron spectroscopy (including that across Cr 2p-3d and Zr 3p-4d resonance) and X-ray absorption spectroscopy methods allowed to propose the location of the Cr 3d-states in the Se 3p-Zr 4d energy gap.
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Affiliation(s)
- Alexey Shkvarin
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
| | - Alexander Merentsov
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
| | - Mikhail Postnikov
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
| | - Elena Shkvarina
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
| | - Aleksey Volegov
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
- Ural Federal University, Institute of Natural Sciences and Mathematics, 620002 Ekaterinburg, Russia
| | - Stepan Pryanichnikov
- Institute of Metallurgy, Ural Branch of Russian Academy of Sciences, 620016 Ekaterinburg, Russia
| | - Polina Zayats
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
| | - Alexey Lebedev
- National Research Centre "Kurchatov Institute", 1 Akademika Kurchatova pl., 123182 Moscow, Russia
| | - Ratibor Chumakov
- National Research Centre "Kurchatov Institute", 1 Akademika Kurchatova pl., 123182 Moscow, Russia
| | - Alexander Titov
- M.N. Mikheev lnstitute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
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Whitcher TJ, Fauzi AD, Caozheng D, Chi X, Syahroni A, Asmara TC, Breese MBH, Neto AHC, Wee ATS, Majidi MA, Rusydi A. Unravelling strong electronic interlayer and intralayer correlations in a transition metal dichalcogenide. Nat Commun 2021; 12:6980. [PMID: 34848717 PMCID: PMC8632915 DOI: 10.1038/s41467-021-27182-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Accepted: 10/27/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic correlations play important roles in driving exotic phenomena in condensed matter physics. They determine low-energy properties through high-energy bands well-beyond optics. Great effort has been made to understand low-energy excitations such as low-energy excitons in transition metal dichalcogenides (TMDCs), however their high-energy bands and interlayer correlation remain mysteries. Herewith, by measuring temperature- and polarization-dependent complex dielectric and loss functions of bulk molybdenum disulphide from near-infrared to soft X-ray, supported with theoretical calculations, we discover unconventional soft X-ray correlated-plasmons with low-loss, and electronic transitions that reduce dimensionality and increase correlations, accompanied with significantly modified low-energy excitons. At room temperature, interlayer electronic correlations, together with the intralayer correlations in the c-axis, are surprisingly strong, yielding a three-dimensional-like system. Upon cooling, wide-range spectral-weight transfer occurs across a few tens of eV and in-plane p-d hybridizations become enhanced, revealing strong Coulomb correlations and electronic anisotropy, yielding a two-dimensional-like system. Our result shows the importance of strong electronic, interlayer and intralayer correlations in determining electronic structure and opens up applications of utilizing TMDCs on plasmonic nanolithrography.
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Affiliation(s)
- T J Whitcher
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117576, Singapore.
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore, 117546, Singapore.
| | - Angga Dito Fauzi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117576, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - D Caozheng
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - X Chi
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore, 117546, Singapore
| | - A Syahroni
- Department of Physics, University of Indonesia, Depok, 16424, Indonesia
| | - T C Asmara
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117576, Singapore
| | - M B H Breese
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117576, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - A H Castro Neto
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
- NUSSNI-NanoCore, National University of Singapore, Singapore, 117576, Singapore
| | - A T S Wee
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
- NUSSNI-NanoCore, National University of Singapore, Singapore, 117576, Singapore
| | - M Aziz Majidi
- Department of Physics, University of Indonesia, Depok, 16424, Indonesia
| | - A Rusydi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117576, Singapore.
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore, 117546, Singapore.
- NUSSNI-NanoCore, National University of Singapore, Singapore, 117576, Singapore.
- NUS Graduate School for Integrative Sciences and Engineering, Singapore, 117456, Singapore.
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Abstract
First principles density functional theory was used to study the energetic, structural, and electronic properties of HfS 2 and TiS 2 materials in their bulk, pristine monolayer, as well as in the monolayer structure with the adsorbed C, N, and P atoms. It is shown that the HfS 2 monolayer remains a semiconductor while TiS 2 changes from semiconductor to metallic behavior after the atomic adsorption. The interaction with the external atoms introduces localized levels inside the band gap of the pristine monolayers, significantly altering their electronic properties, with important consequences on the practical use of these materials in real devices. These results emphasize the importance of considering the interaction of these 2D materials with common external atomic or molecular species.
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Zhang WX, Yin Y, He C. Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain. Phys Chem Chem Phys 2020; 22:26231-26240. [DOI: 10.1039/d0cp04474a] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.
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Affiliation(s)
- W. X. Zhang
- School of Materials Science and Engineering
- Chang’an University
- Xi’an 710064
- China
| | - Y. Yin
- School of Materials Science and Engineering
- Chang’an University
- Xi’an 710064
- China
| | - C. He
- State Key Laboratory for Mechanical Behavior of Materials
- School of Materials Science and Engineering
- Xi’an Jiaotong University
- Xi’an
- China
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5
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Michałowski PP, Knyps P, Ciepielewski P, Caban P, Dumiszewska E, Baranowski J. Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometry. Phys Chem Chem Phys 2019; 21:8837-8842. [PMID: 30973170 DOI: 10.1039/c9cp00613c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The application of secondary ion mass spectrometry (SIMS) in investigation and comparison of molybdenum disulfide (MoS2) films grown on SiO2, Al2O3 and BN substrates is presented. SIMS measurements of the MoS2/substrate interface reveals oxygen out-diffusion from the substrates containing oxygen and the formation of an amorphous MoOS layer in addition to MoS2. The total area of MoS2 domains covering the substrate is directly related to the type of substrate. For SiO2, small triangular domains of MoS2 separated by amorphous MoOS material are observed. For Al2O3, the sizes of the MoS2 domains are drastically improved due to the higher stability of sapphire. For a BN substrate, SIMS measurements reveal a uniform MoS2 coverage over the whole 2-inch wafer. These results show the destructive role of oxygen released from substrates such as SiO2 or Al2O3 during the growth process of MoS2. The fast and cheap growth process on a non-oxide substrate allows large wafer-scale uniform molybdenum disulfide material to be obtained, which is promising for device fabrication.
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Affiliation(s)
| | - Piotr Knyps
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland.
| | - Paweł Ciepielewski
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland.
| | - Piotr Caban
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland.
| | - Ewa Dumiszewska
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland.
| | - Jacek Baranowski
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland.
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Sarma S, Ghosh B, Ray SC, Wang HT, Mahule TS, Pong WF. Electronic structure and magnetic behaviors of exfoliated MoS 2 nanosheets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:135501. [PMID: 30609419 DOI: 10.1088/1361-648x/aafc12] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The correlation of electronic structure and magnetic behaviors of layered molybdenum disulfide (MoS2) nanosheets, mechanically exfoliated from pristine hexagonal crystal (2H-MoS2) have been studied. Raman spectra show the energy difference (ΔE) between two Raman peaks A 1g and [Formula: see text] was about 20.2 cm-1, indicating the formation of mono-/bi-layered MoS 2 nanosheets as obtained after mechanical exfoliation from pristine 2H-MoS 2 . The absence of the reflection peak (0 0 2) in x-ray diffraction patterns confirms the formation of few-layered and mono-/bi-layered MoS 2 nanosheets with reduced thickness. Mo 3d and S 2p XPS core level peaks shifted to higher energy with the reduction of the number of layers in exfoliated MoS2. As the number of layers decreased, valence band maximum position increased from 1.11 eV (pristine MoS2) to 1.57 eV (mono-/bi-layered MoS 2 nanosheets), whereas the surface work function (Ф) reduced from 4.85 eV (pristine MoS2) to 4.47 eV (mono-/bi-layered MoS2 nanosheets), as observed from UPS (He-I) measurements. UPS (He-II) spectra, as well as VB-PES spectra of mono-/bi-layered MoS 2 nanosheets, exhibits an enhanced valence band density of states (DOS) of S 3p -derived states near Fermi level (E f). Mo L II-edge and S K-edge x-ray absorption near edge structure spectra of mono-/bi-layered MoS 2 nanosheets show the splitting of different peaks that cause a noticeable change in their band structure. Magnetic M-H hysteresis loops measurement clearly demonstrates the increase of room temperature ferromagnetism from pristine to mono-/bi-layer MoS2, due to the existence of defects ('S'-vacancies or defects at the grain boundaries region) and the increase of DOS.
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Affiliation(s)
- Sweety Sarma
- Department of Physics, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg, South Africa
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7
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Pal B, Cao Y, Liu X, Wen F, Kareev M, N'Diaye AT, Shafer P, Arenholz E, Chakhalian J. Anomalous orbital structure in two-dimensional titanium dichalcogenides. Sci Rep 2019; 9:1896. [PMID: 30760747 PMCID: PMC6374443 DOI: 10.1038/s41598-018-37248-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2018] [Accepted: 11/05/2018] [Indexed: 11/30/2022] Open
Abstract
Generally, lattice distortions play a key role in determining the electronic ground states of materials. Although it is well known that trigonal distortions are generic to most two dimensional transition metal dichalcogenides, the impact of this structural distortion on the electronic structure and topological properties has not been understood conclusively. Here, by using a combination of polarization dependent X-ray absorption spectroscopy (XAS), X-ray photoelectron spectroscopy (XPS) and atomic multiplet cluster calculations, we have investigated the electronic structure of titanium dichalcogenides TiX2 (X = S, Se, Te), where the magnitude of the trigonal distortion increase monotonically from S to Se and Te. Our results reveal the presence of an anomalously large crystal field splitting. This unusual kind of crystal field splitting is likely responsible for the unconventional electronic structure of TiX2 compounds and ultimately controls the degree of the electronic phase protection. Our findings also indicate the drawback of the distorted crystal field picture in explaining the observed electronic ground state and emphasize the key importance of trigonal symmetry, metal-ligand hybridization and electron-electron correlations in defining the electronic structures at the Fermi energy.
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Affiliation(s)
- Banabir Pal
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA.
| | - Yanwei Cao
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA. .,Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China.
| | - Xiaoran Liu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - Fangdi Wen
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - M Kareev
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
| | - A T N'Diaye
- Advanced Light Source, Lawrence Berkley National Laboratory, Berkeley, California, 94720, USA
| | - P Shafer
- Advanced Light Source, Lawrence Berkley National Laboratory, Berkeley, California, 94720, USA
| | - E Arenholz
- Advanced Light Source, Lawrence Berkley National Laboratory, Berkeley, California, 94720, USA
| | - J Chakhalian
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, 08854, USA
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8
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Zhai H, Qin Z, Sun D, Wang J, Liu C, Min N, Li Q. Pressure-induced phase transition, metallization and superconductivity in ZrS 2. Phys Chem Chem Phys 2018; 20:23656-23663. [PMID: 30191245 DOI: 10.1039/c8cp04271c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Zirconium disulfide (ZrS2) is an exemplary case among layered materials that exhibit unusual electronic and vibrational properties, with applications in potential photovoltaic and single-layer transistor materials. Here, we examine the effect of pressure on the structural stability, phonon dispersion, electronic properties and electron-phonon coupling of ZrS2 using first-principles calculations. Our results unravel that ZrS2 undergoes several pressure-induced phase transformations from the ambient-pressure P3[combining macron]m1 structure to a monoclinic P21/m structure at 2.0 GPa, to an orthorhombic Immm structure at 5.6 GPa, and to a tetragonal I4/mmm structure at 25.0 GPa. The electronic band calculations indicate that the layered P3[combining macron]m1 and P21/m structures are narrow-gap semiconductors. The gaps of the above two phases, which are normal semiconductors, decrease with pressure. Our results show that ZrS2 reaches the metallic state by a P21/m → Immm phase transition and keeps its metallic state in the I4/mmm phase. A pressure-driven evolution of the topological Fermi surface has been uncovered. The electron-phonon coupling results identify superconducting states in both metallic Immm and I4/mmm structures. Our research shows that pressure is efficient in the modulation of the bonding states, crystal structures and electronic properties of ZrS2, which will stimulate further high-pressure structural and conductive measurements.
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Affiliation(s)
- Hang Zhai
- Key Laboratory of Automobile Materials of MOE, State Key Laboratory of Superhard Materials, and Department of Materials Science, Jilin University, Changchun 130012, China.
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9
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Najmaei S, Neupane MR, Nichols BM, Burke RA, Mazzoni AL, Chin ML, Rhodes DA, Balicas L, Franklin AD, Dubey M. Cross-Plane Carrier Transport in Van der Waals Layered Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703808. [PMID: 29659147 DOI: 10.1002/smll.201703808] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2017] [Revised: 01/25/2018] [Indexed: 06/08/2023]
Abstract
The mechanisms of carrier transport in the cross-plane crystal orientation of transition metal dichalcogenides are examined. The study of in-plane electronic properties of these van der Waals compounds has been the main research focus in recent years. However, the distinctive physical anisotropies, short-channel physics, and tunability of cross layer interactions can make the study of their electronic properties along the out-of-plane crystal orientation valuable. Here, the out-of-plane carrier transport mechanisms in niobium diselenide and hafnium disulfide are explored as two broadly different representative materials. Temperature-dependent current-voltage measurements are preformed to examine the mechanisms involved. First principles simulations and a tunneling model are used to understand these results and quantify the barrier height and hopping distance properties. Using Raman spectroscopy, the thermal response of the chemical bonds is directly explored and the insight into the van der Waals gap properties is acquired. These results indicate that the distinct cross-plane carrier transport characteristics of the two materials are a result of material thermal properties and thermally mediated transport of carriers through the van der Waals gaps. Exploring the cross-plane electron transport, the exciting physics involved is unraveled and potential new avenues for the electronic applications of van der Waals layers are inspired.
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Affiliation(s)
- Sina Najmaei
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Barbara M Nichols
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Robert A Burke
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
- General Technical Services, LLC, 1451 Route 34 South-Suite 301, Wall Township, NJ, 07727, USA
| | - Alexander L Mazzoni
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Matthew L Chin
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Daniel A Rhodes
- National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, FL, 32310, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, FL, 32310, USA
| | - Aaron D Franklin
- Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708, USA
| | - Madan Dubey
- Sensors and Electron Devices Directorate, United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
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10
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Tanabe I, Komesu T, Le D, Rawal TB, Schwier EF, Zheng M, Kojima Y, Iwasawa H, Shimada K, Rahman TS, Dowben PA. The symmetry-resolved electronic structure of 2H-WSe2(0 0 0 1). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:345503. [PMID: 27362263 DOI: 10.1088/0953-8984/28/34/345503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The orbital symmetry of the band structure of 2H-WSe2(0 0 0 1) has been investigated by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The WSe2(0 0 0 1) experimental band structure is found, by ARPES, to be significantly different for states of even and odd reflection parities along both the [Formula: see text]-[Formula: see text] and [Formula: see text]-[Formula: see text] lines, in good agreement with results obtained from DFT. The light polarization dependence of the photoemission intensities from the top of the valence band for bulk WSe2(0 0 0 1) is explained by the dominance of W 5[Formula: see text] states around the [Formula: see text]-point and W 5d xy states around the [Formula: see text]-point, thus dominated, respectively, by states of even and odd symmetry, with respect to the [Formula: see text]-[Formula: see text] line. The splitting of the topmost valence band at [Formula: see text], due to spin-orbit coupling, is measured to be 0.49 ± 0.01 eV, in agreement with the 0.48 eV value from DFT, and prior measurements for the bulk single crystal WSe2(0 0 0 1), albeit slightly smaller than the 0.513 ± 0.01 eV observed for monolayer WSe2.
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Affiliation(s)
- Iori Tanabe
- Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 N 16th, University of Nebraska, Lincoln, NE 68588-0299, USA
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11
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Chae SH, Jin Y, Kim TS, Chung DS, Na H, Nam H, Kim H, Perello DJ, Jeong HY, Ly TH, Lee YH. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film. ACS NANO 2016; 10:1309-1316. [PMID: 26735305 DOI: 10.1021/acsnano.5b06680] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.
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Affiliation(s)
- Sang Hoon Chae
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Youngjo Jin
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Tae Soo Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Dong Seob Chung
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Hyunyeong Na
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Honggi Nam
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Hyun Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - David J Perello
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Hye Yun Jeong
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Thuc Hue Ly
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea
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12
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Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films. PHOTONICS 2015. [DOI: 10.3390/photonics2010288] [Citation(s) in RCA: 60] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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13
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Song I, Park C, Choi HC. Synthesis and properties of molybdenum disulphide: from bulk to atomic layers. RSC Adv 2015. [DOI: 10.1039/c4ra11852a] [Citation(s) in RCA: 249] [Impact Index Per Article: 27.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022] Open
Abstract
This review paper aims at a general introduction on up-to-date studies on the synthesis and properties of two-dimensional atomic layers of molybdenum disulphide, along with a brief overview on the bulk and three polytypes.
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Affiliation(s)
- Intek Song
- Center for Artificial Low Dimensional Electronic Systems
- Institute for Basic Science (IBS)
- Pohang
- Korea
- Department of Chemistry
| | - Chibeom Park
- Center for Artificial Low Dimensional Electronic Systems
- Institute for Basic Science (IBS)
- Pohang
- Korea
- Department of Chemistry
| | - Hee Cheul Choi
- Center for Artificial Low Dimensional Electronic Systems
- Institute for Basic Science (IBS)
- Pohang
- Korea
- Department of Chemistry
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14
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Liu GB, Xiao D, Yao Y, Xu X, Yao W. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. Chem Soc Rev 2015; 44:2643-63. [DOI: 10.1039/c4cs00301b] [Citation(s) in RCA: 443] [Impact Index Per Article: 49.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Two-dimensional group-VIB transition metal dichalcogenides have extraordinary properties originating from their complex electronic structures.
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Affiliation(s)
- Gui-Bin Liu
- School of Physics
- Beijing Institute of Technology
- Beijing 100081
- China
- Department of Physics and Center of Theoretical and Computational Physics
| | - Di Xiao
- Department of Physics
- Carnegie Mellon University
- Pittsburgh
- USA
| | - Yugui Yao
- School of Physics
- Beijing Institute of Technology
- Beijing 100081
- China
| | - Xiaodong Xu
- Department of Physics
- University of Washington
- Seattle
- USA
- Department of Material Science and Engineering
| | - Wang Yao
- Department of Physics and Center of Theoretical and Computational Physics
- The University of Hong Kong
- Hong Kong
- China
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15
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Komesu T, Le D, Ma Q, Schwier EF, Kojima Y, Zheng M, Iwasawa H, Shimada K, Taniguchi M, Bartels L, Rahman TS, Dowben PA. Symmetry-resolved surface-derived electronic structure of MoS2(0 0 0 1). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:455501. [PMID: 25301782 DOI: 10.1088/0953-8984/26/45/455501] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We find a wave vector dependence of the band symmetries for MoS(2)(0 0 0 1) in angle-resolved photoemission. The band structures are found to be significantly different for states of even and odd reflection parities, despite the absence of true mirror plane symmetry away from Γ, the Brillouin zone center, along the line to the K point, at the Brillouin zone edge. Our measurements agree with density functional theory (DFT) calculations for each band symmetry, with the notable exception of the Mo 4d(x(2)-y(2)) contributions to the valence band structure of MoS(2)(0 0 0 1). The band structure is indicative of strong S 3p and Mo 4d hybridization. In particular, the top of the valence band is predominantly composed of Mo 4d(3z(2)-r(2)) derived states near Γ, whereas near K Mo 4d(x(2)-y(2)) as well as Mo 4d(xy) dominate. In contrast, the bottom of the valence band is dominated by Mo 5s and S 3p(z) contributions.
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Affiliation(s)
- Takashi Komesu
- Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 N 16th, University of Nebraska, Lincoln, NE 68588-0299, USA
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16
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Yablonskikh MV, Shkvarin AS, Yarmoshenko YM, Skorikov NA, Titov AN. Resonant photoemission at the L3 absorption edge of Mn and Ti and the electronic structure of 1T-Mn0.2TiSe2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:045504. [PMID: 22217478 DOI: 10.1088/0953-8984/24/4/045504] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Resonant valence band x-ray photoelectron spectra (ResPES) excited near the 2p(3/2) core level energies, 2p x-ray photoelectron spectra (XPS) and L(3,2) x-ray absorption spectra (XAS) of Ti and Mn in single crystals of 1T-Mn(0.2)TiSe(2) were studied for the first time. The ionic-covalent character of the bonds formed by the Mn atoms with the neighboring Se atoms in the octahedral coordination is established. From the XPS and XAS measurements compared with the results of atomic multiplet calculations of Ti and Mn L(3,2) XAS, it is found that the Ti atoms are in the ionic state of 4 + and the Mn atoms are in the state of 2 +. In ResPES of Mn(0.2)TiSe(2) excited near the Ti 2p(3/2) and Mn 2p(3/2) absorption edges the Ti 3d and Mn 3d bands at binding energies just below the Fermi level are observed. According to theoretical calculations of E(k) the Ti 3d states are localized in the vicinity of the Γ point and the Mn 3d states are localized along the direction K-Γ-M in the Brillouin zone of the crystal.
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Affiliation(s)
- M V Yablonskikh
- Sincrotrone Trieste, Area Science Park, Basovizza (Ts), Italy.
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17
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Jiang H. Structural and electronic properties of ZrX2 and HfX2 (X = S and Se) from first principles calculations. J Chem Phys 2011; 134:204705. [DOI: 10.1063/1.3594205] [Citation(s) in RCA: 103] [Impact Index Per Article: 7.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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18
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Joyner DJ, Willis RF. Photoelectron spectroscopy of the iron borides Structure, bonding and magnetic behaviour. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418618108240410] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Todorova T, Alexiev V, Prins R, Weber T. Ab initio study of 2H-MoS2using Hay and Wadt effective core pseudo-potentials for modelling the (101̄0) surface structure. Phys Chem Chem Phys 2004. [DOI: 10.1039/b402993n] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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20
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Levy F. Electrical resistivity and Hall effect in TiSe2containing vanadium impurities. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/12/18/017] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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21
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Beal AR, Hughes HP. Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2and 2H-MoTe2. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/12/5/017] [Citation(s) in RCA: 316] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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22
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Bullett DW. Variation of electronic properties with structure of transition metal trichalcogenides. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/12/2/015] [Citation(s) in RCA: 79] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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23
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Kelly MJ, Bullett DW. A calculation of the electronic structure of the amorphous Pd80Si20system. ACTA ACUST UNITED AC 2001. [DOI: 10.1088/0022-3719/12/13/017] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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24
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Klipstein PC, Bagnall AG, Liang WY, Marseglia EA, Friend RH. Stoichiometry dependence of the transport properties of TiS2. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/14/28/009] [Citation(s) in RCA: 107] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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25
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Boehm JV, Isomaki H. Valence density of states of group IVA transition-metal dichalcogenides. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/17/010] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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27
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Lambrecht W, Djafari-Rouhani B, Lannoo M, Vennik J. The energy band structure of V2O5. I. Theoretical approach and band calculations. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/13/007] [Citation(s) in RCA: 44] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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28
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Lambrecht W, Djafari-Rouhani B, Lannoo M, Clauws P, Fiermans L, Vennik J. The energy band structure of V2O5. II. Analysis of the theoretical results and comparison with experimental data. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/13/008] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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29
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Inglesfield JE. Bonding and phase transitions in transition metal dichalcogenide layer compounds. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/1/007] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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30
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Bullett DW. Geometrical structure and metal-metal bonding in niobium chalcogenides and chalcogenide halides. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/13/7/011] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Ohno Y, Hirama K, Nakai S, Sugiura C, Okada S. X-ray absorption spectroscopy of layered 4D transition-metal dichalcogenides. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/16/34/019] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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36
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Kautek W. Electronic mobility anisotropy of layered semiconductors: transversal photoconductivity measurements at n-MoSe2. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/15/16/002] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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37
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38
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Withers RL, Wilson JA. An examination of the formation and characteristics of charge-density waves in inorganic materials with special reference to the two- and one-dimensional transition-metal chalcogenides. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/19/25/005] [Citation(s) in RCA: 125] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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39
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Benesh GA, Woolley AM, Umrigar C. The pressure dependences of TiS2and TiSe2band structures. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/18/8/007] [Citation(s) in RCA: 53] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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40
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Peloquin G, Provencher R, Jandl S, Aubin M. Optical transitions in ZrS2and ZrSe2from thermoreflectance measurements. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/19/17/010] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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43
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Drube W, Schafer I, Skibowski M. The experimental band structure of occupied and unoccupied states of titanium dichalcogenides. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/20/26/020] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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44
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Klipstein PC, Friend RH. Transport properties of LixTiS2(O<χ<1): a metal with a tunable Fermi level. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/20/26/018] [Citation(s) in RCA: 29] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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45
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The Scanning–Tunneling Microscopy, the X-Ray Photoelectron Spectroscopy, the Inner-Shell-Electron Energy-Loss Spectroscopy Studies ofMTe2andM3SiTe6(M=Nb and Ta). J SOLID STATE CHEM 1999. [DOI: 10.1006/jssc.1998.7986] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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46
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Affiliation(s)
- D. G. Clerc
- Materials Science Program, Washington State University, Pullman, Washington 99164-4630
| | - R. D. Poshusta
- Materials Science Program, Washington State University, Pullman, Washington 99164-4630
| | - A. C. Hess
- Environmental Molecular Sciences Laboratory, MS K1-90, Pacific Northwest Laboratory, Richland, Washington 99352
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47
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Claessen R, Anderson RO, Gweon G, Allen JW, Ellis WP, Janowitz C, Olson CG, Shen ZX, Eyert V, Skibowski M, Friemelt K, Bucher E, Hüfner S. Complete band-structure determination of the quasi-two-dimensional Fermi-liquid reference compound TiTe2. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:2453-2465. [PMID: 9986092 DOI: 10.1103/physrevb.54.2453] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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48
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49
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Langlais V, Belkhir H, Themlin J, Debever J, Yu L, Thiry PA. Initial- and final-state effects in the conduction bands of 2H-MoS2(0001) studied by k||-resolved inverse photoemission spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:12095-12101. [PMID: 9980351 DOI: 10.1103/physrevb.52.12095] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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50
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Starnberg HI, Brauer HE, Nilsson PO, Holleboom LJ, Hughes HP. Valence Band Photoemission Study of Cs Intercalated VSe2. ACTA ACUST UNITED AC 1994. [DOI: 10.1080/10587259408050135] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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