Electronic structure of SnO2, GeO2, PbO2, TeO2and MgF2

Structural and sensing properties of ethanol gas using Pd-doped SnO2 thick film gas sensor

In the present study, we fabricate undoped and 1 wt% palladium (Pd)-doped tin oxide (SnO₂) films were deposited on alumina substrate using screen printing technology. The deposited sensing film is characterized and its microstructural properties are studied using X-ray diffraction (XRD) and atomic force microscope (AFM). The crystallite size, grain size, and roughness parameter decrease with Pd doping. It was ~ 23.5 nm and ~ 19.2 nm for undoped and Pd-doped SnO₂ film samples. The response of fabricated thick film sensor for 1 wt% Pd-doped SnO₂ is maximum (~ 71) with varying concentrations of ethanol (5000 ppm) at operating temperature 473 K. The response/recovery time is observed and it is ~ 41 s/125 s. The reduction in crystallinity and roughness leads to improves sensing behavior towards ethanol gas. The sensing mechanism and response behavior is explained based on a theoretical model.

DFT calculation of 229thorium-doped magnesium fluoride for nuclear laser spectroscopy

The ²²⁹thorium nucleus has an extremely low-energy isomeric state that could be manipulated with light in the vacuum ultraviolet (VUV) range. Recent measurements based on internal conversion electrons place the isomer energy at 8.28(17) eV (Seiferle B et al 2019), within the transmission window of large-band-gap materials, such as fluoride single crystals. Doping ²²⁹Th into VUV-transparent materials realizes a spectroscopy target with a high nuclei density and might form the basis of a solid-state nuclear clock. This paper presents a theoretical study of the optical properties of a thorium-doped MgF₂ crystal. Using the Vienna Ab-initio Simulation Package, we perform density functional theory calculations of the electronic and optical properties of Th:MgF₂. We determine whether thorium will be accepted as a dopant and identify the charge compensation mechanism and geometry. The simulations indicate, that the band gap of Th-doped MgF₂ will be significantly reduced compared to undoped MgF₂, below the expected ²²⁹Th isomer energy. This result is in striking contrast to a similar study performed for Th-doped CaF₂ (Dessovic P et al 2014 J. Phys. Condens. Matter 26 105402).

Electron injection effect in In2O3 and SnO2 nanocrystals modified by ruthenium heteroleptic complexes

In this work, the optical characteristics and conductivity under photoactivation with visible light of hybrids based on nanocrystalline SnO2 or In2O3 semiconductor matrixes and heteroleptic Ru(ii) complexes were studied. The heteroleptic Ru(ii) complexes were prepared based on 1H-imidazo[4,5-f][1,10]phenanthroline and 2,2'-bipyridine ligands. Nanocrystalline semiconductor oxides were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, SEM and single-point BET methods. The heteroleptic Ru(ii) complexes as well as hybrid materials were characterized by time-resolved luminescence and X-ray photoelectron spectroscopy. The results showed that the surface modification of SnO2 nanoparticles with heteroleptic ruthenium complexes led to an increase in conductivity upon irradiation with light appropriate for absorption by organometallic complexes. In the case of In2O3, the deposition of Ru(ii) complexes resulted in a decrease in conductivity, apparently due to the special structure of the surface layer of the semiconductor.

Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection

Nitric oxide (NO) is one of the main environmental pollutants and one of the biomarkers noninvasive diagnosis of respiratory diseases. Organic-inorganic hybrids based on heterocyclic Ru (II) complex and nanocrystalline semiconductor oxides SnO2 and In2O3 were studied as sensitive materials for NO detection at room temperature under periodic blue light (λmax = 470 nm) illumination. The semiconductor matrixes were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, Raman spectroscopy, and single-point BET methods. The heterocyclic Ru (II) complex was synthesized for the first time and characterized by 1H NMR, 13C NMR, MALDI-TOF mass spectrometry and elemental analysis. The HOMO and LUMO energies of the Ru (II) complex are calculated from cyclic voltammetry data. The thermal stability of hybrids was investigated by thermogravimetric analysis (TGA)-MS analysis. The optical properties of Ru (II) complex, nanocrystalline oxides and hybrids were studied by UV-Vis spectroscopy in transmission and diffuse reflectance modes. DRIFT spectroscopy was performed to investigate the interaction between NO and the surface of the synthesized materials. Sensor measurements demonstrate that hybrid materials are able to detect NO at room temperature in the concentration range of 0.25-4.0 ppm with the detection limit of 69-88 ppb.

Probing disorder in high-pressure cubic tin (IV) oxide: a combined X-ray diffraction and absorption study

The transparent conducting oxide, SnO₂, is a promising optoelectronic material with predicted tailorable properties via pressure-mediated band gap opening. While such electronic properties are typically modeled assuming perfect crystallinity, disordering of the O sublattice under pressure is qualitatively known. Here a quantitative approach is thus employed, combining extended X-ray absorption fine-structure (EXAFS) spectroscopy with X-ray diffraction, to probe the extent of Sn-O bond anharmonicities in the high-pressure cubic (Pa\bar{3}) SnO₂ - formed as a single phase and annealed by CO₂ laser heating to 2648 ± 41 K at 44.5 GPa. This combinational study reveals and quantifies a large degree of disordering in the O sublattice, while the Sn lattice remains ordered. Moreover, this study describes implementation of direct laser heating of non-metallic samples by CO₂ laser alongside EXAFS, and the high quality of data which may be achieved at high pressures in a diamond anvil cell when appropriate thermal annealing is applied.

Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3

Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor-liquid-solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of Ar and O2 at 1 ± 0.5 mbar. We find that effective doping and ordering can only be achieved inside this narrow window of growth conditions. The Sb:SnO2 nanowires have the tetragonal rutile crystal structure and are inclined along two mutually perpendicular directions forming a rectangular mesh on m-Al2O3 while those on r-Al2O3 are oriented in one direction. The growth directions do not change by varying the growth temperature between 700 °C and 1000 °C but the carrier density decreased from 8 × 1019 cm-3 to 4 × 1017 cm-3 due to the re-evaporation and limited incorporation of Sb donor impurities in SnO2. The Sb:SnO2 nanowires on r-Al2O3 had an optical transmission of 80% above 800 nm and displayed very long photoluminescence lifetimes of 0.2 ms at 300 K. We show that selective area location growth of highly ordered Sb:SnO2 nanowires is possible by patterning the catalyst which is important for the realization of novel nanoscale devices such as nanowire solar cells.

CdS/CdTe Heterostructures for Applications in Ultra-Thin Solar Cells

The preparation of ultra-thin semi-transparent solar cells with potential applications in windows or transparent roofs entails several challenges due to the very small thickness of the layers involved. In particular, problems related to undesired inter-diffusion or inhomogeneities originated by incomplete coverage of the growing surfaces must be prevented. In this paper, undoped SnO₂, CdS, and CdTe thin films with thickness suitable for use in ultra-thin solar cells were deposited with a radiofrequency (RF) magnetron sputtering technique onto conductive glass. Preparation conditions were found for depositing the individual layers with good surface coverage, absence of pin holes and with a relatively small growth rate adapted for the control of very small thickness. After a careful growth calibration procedure, heterostructured solar cells devices were fabricated. The influence of an additional undoped SnO₂ buffer layer deposited between the conductive glass and the CdS window was studied. The incorporation of this layer led to an enhancement of both short circuit current and open circuit voltage (by 19 and 32%, respectively) without appreciable changes of other parameters. After the analysis of the cell parameters extracted from the current-voltage (I-V) curves, possible origins of these effects were found to be: Passivation effects of the SnO₂/CdS interface, blocking of impurities diffusion or improvement of the band alignment.

Biodegradable resistive switching memory based on magnesium difluoride

This study presents a new type of resistive switching memory device that can be used in biodegradable electronic applications. The biodegradable device features magnesium difluoride as the active layer and iron and magnesium as the corresponding electrodes. This is the first report on magnesium difluoride as a resistive switching layer. With on-off ratios larger than one hundred, the device on silicon switches at voltages less than one volt and requires only sub-mA programming current. AC endurance of 10(3) cycles is demonstrated with ±1 V voltage pulses. The switching mechanism is attributed to the formation and rupture of conductive filaments comprising fluoride vacancies in magnesium difluoride. Devices fabricated on a flexible polyethylene terephthalate substrate are tested for functionality, and degradation is subsequently demonstrated in de-ionized water. An additional layer of magnesium difluoride is used to hinder the degradation and extend the lifetime of the device.

Spectroscopic assessment of the role of hydrogen in surface defects, in the electronic structure and transport properties of TiO2, ZnO and SnO2 nanoparticles

The interaction of metal oxides with gases is very important for the operation of energy devices such as fuel cells and gas sensors, and also relevant for materials synthesis and processing. The electronic transport properties of metal oxides for the aforementioned devices strongly depend on the chemistry of these gases and on the presence or absence of defects on the surface and in the bulk. The Debye screening length is in this respect a material specific property which becomes particularly significant when the material is comprised of nanoparticles. In the present study, poly-crystalline TiO(2), ZnO and SnO(2) nanoparticles were synthesized by a high temperature flame spray combustion process and investigated for their interaction with hydrogen. The chemistry of the reduced and oxidized surfaces of these metal oxides, where the interaction with gases takes place, was investigated in detail with X-ray photoelectron spectroscopy (XPS). The transitions found near E(F) with XPS are consistent with those found by diffuse reflectance spectroscopy (DRS) and were assigned to surface states originating from non-equilibrium oxygen vacancies. We show how the non-stoichiometric character of the metal oxide surface constitutes electronic surface defects, in particular oxygen vacancies which allow for additional transitions near the Fermi energy (E(F)). The concentration of these surface defects can be strongly reduced by thermal after-treatment under air or increased by Ar(+)-sputtering, after which significant spectral features appear near E(F). Such prominent changes are particularly observed for TiO(2) and SnO(2), whereas the stoichiometry of the ZnO surface seems to be less responsive to such reducing and oxidizing conditions. Pronounced changes of the electrical conductivity upon changing from reducing to oxidizing conditions at elevated temperatures were monitored by electrochemical impedance spectroscopy (EIS). The lowering of the potential barrier for the charge transport particularly at lower temperatures already at reducing conditions is confirmed. The impedance response indicates that charge transfer is governed predominantly by one single process, i.e. by interaction of surface-like states localized within depletion layer with gas molecules. This implies that the free charge carriers in the material are determined by the intrinsic property like non-stoichiometry. Gas sensors made from such FSS nanoparticulate metal oxides showed well developed sensing characteristics of the hydrogen sensing at moderate temperatures.

Quasiparticle band structures and optical properties of magnesium fluoride

The quasiparticle and optical properties of magnesium fluoride (MgF(2)) are computed within the GW approximation based on many-body perturbation theory (MBPT). The many-body effects appearing in self-energy and electron-hole interactions have an important influence on the electronic and optical properties. The DFT-LDA calculation shows a 6.78 eV band gap. Two methods are employed to evaluate the self-energy within the GW approximation in the present work. The generalized plasmon pole model (GPP) provides a band gap of 12.17 eV, which agrees well with the experimental value of 12.4 eV (Thomas et al 1973 Phys. Status Solidi b 56 163). Another band gap value of 11.30 eV is obtained by using a full frequency-dependent self-energy, which is also not far from the experimental value and is much better than the result from the LDA calculation. The calculated optical spectrum within DFT is significantly different from the experiment. Although the calculated optical absorption threshold within the GW method is close to the experiment, the overall shape of the spectrum is still similar to the case of DFT. However, the overall shape of the spectrum via the Bethe-Salpeter equation (BSE) method agrees well with the experiment.

Nature of the band gap and origin of the conductivity of PbO2 revealed by theory and experiment

Lead dioxide has been used for over a century in the lead-acid battery. Many fundamental questions concerning PbO2 remain unanswered, principally: (i) is the bulk material a metal or a semiconductor, and (ii) what is the source of the high levels of conductivity? We calculate the electronic structure and defect physics of PbO2, using a hybrid density functional, and show that it is an n-type semiconductor with a small indirect band gap of ∼0.2  eV. The origin of electron carriers in the undoped material is found to be oxygen vacancies, which forms a donor state resonant in the conduction band. A dipole-forbidden band gap combined with a large carrier induced Moss-Burstein shift results in a large effective optical band gap. The model is supported by neutron diffraction, which reveals that the oxygen sublattice is only 98.4% occupied, thus confirming oxygen substoichiometry as the electron source.

A germanate transparent conductive oxide

Wide bandgap conductors such as In₂O₃ and ZnO are used as transparent conducting oxides (TCOs). To date, TCOs are realized using post transition metal cations with largely spread s-orbitals such as In³⁺, Sn⁴⁺, Zn²⁺ and Cd²⁺. On the other hand, no good electronic conductor has been realized in oxides of Al, Si and Ge. Here we report the conversion of an oxide of Ge into a good electronic conductor by employing the concept of superdegeneracy. We find that cubic SrGeO₃, synthesized under high pressure, displays a direct bandgap of 3.5 eV, a carrier mobility of 12 cm²(Vs)⁻¹, and conductivities of 3 Scm⁻¹ (DC) and 400 Scm⁻¹ (optical conductivity). This is the first Ge-based electronic conductive oxide, and expands the family of TCOs from ionic oxides to covalent oxides.

Transparent conducting oxides are wide bandgap conductors that have found a range of applications in optoelectronic devices. In this study, Hosono and colleagues fabricate the first transparent conducting oxide based on germanium.

Conductivity in transparent oxide semiconductors

Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity on the basis of bulk band structure features common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for providing the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

Electron mobility and injection dynamics in mesoporous ZnO, SnO₂, and TiO₂ films used in dye-sensitized solar cells

High-performance dye-sensitized solar cells are usually fabricated using nanostructured TiO(2) as a thin-film electron-collecting material. However, alternative metal-oxides are currently being explored that may offer advantages through ease of processing, higher electron mobility, or interface band energetics. We present here a comparative study of electron mobility and injection dynamics in thin films of TiO(2), ZnO, and SnO(2) nanoparticles sensitized with Z907 ruthenium dye. Using time-resolved terahertz photoconductivity measurements, we show that, for ZnO and SnO(2) nanoporous films, electron injection from the sensitizer has substantial slow components lasting over tens to hundreds of picoseconds, while for TiO(2), the process is predominantly concluded within a few picoseconds. These results correlate well with the overall electron injection efficiencies we determine from photovoltaic cells fabricated from identical nanoporous films, suggesting that such slow components limit the overall photocurrent generated by the solar cell. We conclude that these injection dynamics are not substantially influenced by bulk energy level offsets but rather by the local environment of the dye-nanoparticle interface that is governed by dye binding modes and densities of states available for injection, both of which may vary from site to site. In addition, we have extracted the electron mobility in the three nanoporous metal-oxide films at early time after excitation from terahertz conductivity measurements and compared these with the time-averaged, long-range mobility determined for devices based on identical films. Comparison with established values for single-crystal Hall mobilities of the three materials shows that, while electron mobility values for nanoporous TiO(2) films are approaching theoretical maximum values, both early time, short distance and interparticle electron mobility in nanoporous ZnO or SnO(2) films offer considerable scope for improvement.

Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor

Materials that are good electrical conductors are not in general optically transparent, yet a combination of high conductivity and transparency is desirable for many emerging opto-electronic applications. To this end, various transparent oxides composed of transition or post-transition metals (such as indium tin oxide) are rendered electrically conducting by ion doping. But such an approach does not work for the abundant transparent oxides of the main-group metals. Here we demonstrate a process by which the transparent insulating oxide 12CaO x 7Al(2)O(3) (refs 7-13) can be converted into an electrical conductor. H(-) ions are incorporated into the subnanometre-sized cages of the oxide by a thermal treatment in a hydrogen atmosphere; subsequent irradiation of the material with ultraviolet light results in a conductive state that persists after irradiation ceases. The photo-activated material exhibits moderate electrical conductivity (approximately 0.3 S cm(-1)) at room temperature, with visible light absorption losses of only one per cent for 200-nm-thick films. We suggest that this concept can be applied to other main-group metal oxides, for the direct optical writing of conducting wires in insulating transparent media and the formation of a high-density optical memory.

A tool for the interactive 3D visualization of electronic structure in molecules and solids

This paper presents the Vienna ab initio simulation package (VASP) data viewer, a desktop 3D visualization application for the analysis of valence electronic structure information derived from first-principles quantum-mechanical density functional calculations. This tool allows a scientist to directly view and manipulate the calculated charge density or electron localization function (ELF) from an electronic structure calculation, providing insight into the nature of chemical bonding. Particular attention was given to the design and implementation of the user interface (UI) for the data viewer. It provides for expert and novice usage, and both natural direct manipulation and precise numerical control. The data viewer has proven useful to chemical scientists for understanding the results of electronic structure calculations.