A theoretical review on electronic, magnetic and optical properties of silicene

Computational insights into popsilicene as a new planar silicon allotrope composed of 5-8-5 rings

Silicon-based two-dimensional (2D) materials have garnered significant attention due to their unique properties and potential applications in electronics, optoelectronics, and other advanced technologies. Here, we present a comprehensive investigation of a novel silicon allotrope, Popsilicene (Pop-Si), derived from the structure of Popgraphene. Using density functional theory and ab initio molecular dynamics simulations, we explore the thermal stability, mechanical and electronic properties, and optical characteristics of Pop-Si. Our results demonstrate that Pop-Si exhibits good thermal stability at 1000 K. Electronic structure calculations reveal that Pop-Si is metallic, with a high density of states at the Fermi level. Furthermore, our analysis of the optical properties indicates that Pop-Si has pronounced UV-Vis optical activity, making it a promising candidate for optoelectronic devices. Mechanical property assessments show that Pop-Si has Young's modulus ranging from 10 to 92 GPa and a Poisson's ratio of 0.95. These results combined suggest its potential for practical applications.

Tunability of electronic and thermoelectric properties of hexagonal boron nitride with carbon impurities under magnetic field: Tight binding investigation

Utilizing the Kubo-Greenwood formula, Tight Binding calculations were employed to examine the electronic and thermoelectric properties of hexagonal boron nitride (h-BN) with carbon impurity instead of boron, nitrogen and pairs boron-nitrogen. The electronic properties of the pristine monolayer BN are markedly impacted by the introduction of carbon dopants and its band gap reduction is directly correlated with the concentration of carbon impurities. The electronic properties of doped h-BN are influenced by the presence of a magnetic field, leading to subband separation and band gap narrowing, independent of the impurity types. The thermal conductivity and magnetic susceptibility of the CBN-doped monolayer BN structure are higher than those of the BC and NC doped h-BN structures and for all structures, their properties have a strong dependence on the magnetic field. The Lorenz Number for all structures has peak at the TM temperature which shifts to a lower temperature as the impurity concentration decreases.

Adsorption of N, He and Ne on CGe nanoribbons for sensing and optoelectronic applications

Research into nanomaterials yields numerous exceptional applications in contemporary science and technology. The subject of this investigation is a one-dimensional nanostructure, six atoms wide, featuring hydrogen-functionalized edges. The theoretical foundation of this study relies on Density Functional Theory (DFT) and is executed through the utilization of the Vienna Ab initio Simulation Package (VASP). The outcomes demonstrate the stability of adsorption configurations, along with the preservation of a hexagonal honeycomb lattice. The pristine configuration, characterized by a wide bandgap, is well-suited for optoelectronic applications, whereas adsorption configurations find their application in gas sensing. Nitrogen (N) adsorption transforms the semiconducting system into a semimetallic one, with the spin-up state showing semiconductor characteristics and the spin-down state exhibiting metallic attributes. The intricate multi-orbital hybridization is explored through the analysis of partial states. While the pristine system remains non-magnetic, N adsorption introduces a magnetic moment of 0.588 μB. The examination of charge density differences indicates a significant charge transfer from N to the CGe substrate surface. Optical properties are systematically investigated, encompassing the dielectric function, absorption coefficient and electron-hole density. Notably, the real part of the dielectric function exhibits negative values, a result that holds promise for future communication applications.

A DFT study of bandgap tuning in chloro-fluoro silicene

The structural, electronic and optical properties of silicene and its derivatives are investigated in the present work by employing density functional theory (DFT). The Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA) is used as the exchange-correlation potential. Our results provide helpful insight for tailoring the band gap of silicene via functionalization of chlorine and fluorine. First, relaxation of all the materials is performed to obtain the appropriate structural parameters. Cl-Si showed the highest lattice parameter 4.31 Å value, while it also possesses the highest buckling of 0.73 Å among all the derivatives of silicene. We also study the electronic charge density, charge difference density and electrostatic potential, to check the bonding characteristics and charge transfer between Si-halides. The electronic properties, band structures and density of states (DOS) of all the materials are calculated using the PBE-GGA as well as the modified Becke-Johnson (mBJ) on PBE-GGA. Pristine silicene is found to have a negligibly small band gap but with the adsorption of chlorine and fluorine atoms, its band gap can be opened. The band gap of Cl-Si and F-Si is calculated to be 1.7 eV and 0.6 eV, respectively, while Cl-F-Si has a band gap of 1.1 eV. Moreover, the optical properties of silicene and its derivatives are explored, which includes dielectric constants ε1 and ε2, refractive indices n, extinction coefficients k, optical conductivity σ and absorption coefficients I. The calculated binding energies and phonon band structures confirm the stability of Cl-Si, Cl-F-Si, and F-Si. We also calculated the photocatalytic properties which show silicine has a good response to reduction, and the other materials to oxidation. A comparison of our current work to recent work in which graphene was functionalized with halides, is also presented and we observe that silicene is a much better alternative for graphene in terms of semiconductors and photovoltaics applications.

Graphene-like emerging 2D materials: recent progress, challenges and future outlook

Owing to the unique physical and chemical properties of 2D materials and the great success of graphene in various applications, the scientific community has been influenced to explore a new class of graphene-like 2D materials for next-generation technological applications. Consequently, many alternative layered and non-layered 2D materials, including h-BN, TMDs, and MXenes, have been synthesized recently for applications related to the 4th industrial revolution. In this review, recent progress in state-of-the-art research on 2D materials, including their synthesis routes, characterization and application-oriented properties, has been highlighted. The evolving applications of 2D materials in the areas of electronics, optoelectronics, spintronic devices, sensors, high-performance and transparent electrodes, energy conversion and storage, electromagnetic interference shielding, hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and nanocomposites are discussed. In particular, the state-of-the-art applications, challenges, and outlook of every class of 2D material are also presented as concluding remarks to guide this fast-progressing class of 2D materials beyond graphene for scientific research into next-generation materials.

Exceptional ultrafast nonlinear optical response of functionalized silicon nanosheets

The present work reports on the ultrafast saturable absorption (SA), optical limiting (OL), and the nonlinear refractive response of hydride-terminated silicon nanosheets (SiNS-H) differently functionalized with styrene and tert-butyl methacrylate (tBuMA), namely, SiNS-styrene and SiNS-tBuMA, using 50 fs, 400 nm and 70 fs, 800 nm laser pulses. SiNS-styrene and SiNS-tBuMA exhibit dramatically enhanced nonlinear optical (NLO) responses compared to SiNS-H, with their absorptive nonlinearity strongly dependent on the laser excitation wavelength. More specifically, the studied functionalized SiNSs reveal strong SA behavior under 400 nm laser excitation, with NLO absorption coefficients, saturable intensities, and modulation depths comparable to various two-dimensional (2D) materials, known to exhibit strong SA, such as graphene, black phosphorous (BP), some transition metal dichalcogenides (TMDs), and some MXenes. On the other hand, under 800 nm laser excitation, SiNS-styrene and SiNS-tBuMA show highly efficient OL performance with OL onset values of about 0.0045 and 0.0065 J cm-2, respectively, which are significantly lower than those of other 2D nanostructures. In addition, it is shown that both SiNS samples have great potential in already existing Si-based optoelectronic devices for optical-switching applications since they exhibit very strong NLO refraction comparable to that of bulk Si. The results of the present work demonstrate that the chemical functionalization of SiNSs provides a highly efficient strategy for the preparation of 2D Si-based nanostructures with enhanced NLO response in view of several optoelectronic and photonic applications, such as OL, SA, and all-optical switching.

First designing of a silicene-based optical MOSFET with outstanding performance

Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration.

Theoretical studies on electronic, magnetic and optical properties of two dimensional transition metal trihalides

Two dimensional transition metal trihalides have drawn attention over the years due to their intrinsic ferromagnetism and associated large anisotropy at nanoscale. The interactions involved in these layered structures are of van der Waals types which are important for exfoliation to different thin samples. This enables one to compare the journey of physical properties from bulk structures to monolayer counterpart. In this topical review, the modulation of electronic, magnetic and optical properties by strain engineering, alloying, doping, defect engineering etc have been discussed extensively. The results obtained by first principle density functional theory calculations are verified by recent experimental observations. The relevant experimental synthesis of different morphological transition metal trihalides are highlighted. The feasibility of such routes may indicate other possible heterostructures. Apart from spintronics based applications, transition metal trihalides are potential candidates in sensing and data storage. Moreover, high thermoelectric figure of merit of chromium trihalides at higher temperatures leads to the possibility of multi-purpose applications. We hope this review will give important directions to further research in transition metal trihalide systems having tunable band gap with reduced dimensionalities.

Epitaxial growth and structural properties of silicene and other 2D allotropes of Si

Since the breakthrough of graphene, considerable efforts have been made to search for two-dimensional (2D) materials composed of other group 14 elements, in particular silicon and germanium, due to their valence electronic configuration similar to that of carbon and their widespread use in the semiconductor industry. Silicene, the silicon counterpart of graphene, has been particularly studied, both theoretically and experimentally. Theoretical studies were the first to predict a low-buckled honeycomb structure for free-standing silicene possessing most of the outstanding electronic properties of graphene. From an experimental point of view, as no layered structure analogous to graphite exists for silicon, the synthesis of silicene requires the development of alternative methods to exfoliation. Epitaxial growth of silicon on various substrates has been widely exploited in attempts to form 2D Si honeycomb structures. In this article, we provide a comprehensive state-of-the-art review focusing on the different epitaxial systems reported in the literature, some of which having generated controversy and long debates. In the search for the synthesis of 2D Si honeycomb structures, other 2D allotropes of Si have been discovered and will also be presented in this review. Finally, with a view to applications, we discuss the reactivity and air-stability of silicene as well as the strategy devised to decouple epitaxial silicene from the underlying surface and its transfer to a target substrate.

Combined effect of stacking and magnetic field on the electrical conductivity and heat capacity of biased trilayer BP and BN

In this paper, the Kubo-Greenwood formula based on the tight-binding model is used to investigate the effects of the bias voltage and magnetic field on the electrical conductivity and heat capacity of the trilayer BP and BN with energy-stable stacking structures. The results show that electronic and thermal properties of the selected structures can be significantly modified by external fields. The position and intensity of DOS peaks and the band gap of selected structures are affected by the external fields. When external fields increases above critical value, the band gap decreases to zero and semiconductor-metallic transition occurs. The results show that the thermal properties of the BP and BN structures are zero in TZ temperature region and increase by temperature above TZ. The increasing rate for thermal properties depends on the stacking configuration and changes with the bias voltage and magnetic field. In the presence of the stronger field, the TZ region decreases below 100 K. Compared to the BP structures, the BN types with larger band gap has smaller electrical conductivity which can be increased in order to 3L-BP by applying the stronger magnetic field or bias voltage. These results are interesting for the future development of nanoelectronic devices.

Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g., turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1 ML Gr buffer) on a 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultraclean conditions for molecular beam epitaxy deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene. At low coverages, the deposition of Si produces large silicene sheets (some hundreds of nanometers large) attested by both AFM and SEM observations and the onset of a Raman peak at 560 cm^-1, very close to the theoretical value of 570 cm^-1 calculated for free-standing silicene. This vibrational mode at 560 cm^-1 represents the highest ever experimentally measured value and is representative of quasi-free-standing silicene with almost no interaction with inert nonmetal substrates. From a coverage rate of 1 ML, the silicene sheets disappear at the expense of 3D Si dendritic islands whose density, size, and thickness increase with the deposited thickness. From this coverage, the Raman mode assigned to quasi-free-standing silicene totally vanishes, and the 2D flakes of silicene are no longer observed by AFM. The experimental results are in very good agreement with the results of kinetic Monte Carlo simulations that rationalize the initial flake growth in solid-state dewetting conditions, followed by the growth of ridges surrounding and eventually covering the 2D flakes. A full description of the growth mechanism is given. This study, which covers a wide range of growth parameters, challenges recent results stating the impossibility to grow silicene on a carbon inert surface and is very promising for large-scale silicene growth. It shows that silicene growth can be achieved using perfectly controlled and ultraclean deposition conditions and an almost defect-free Gr substrate.

Charged lithium adsorption on pristine and defective silicene: a theoretical study

We investigated by first principle calculations the adsorption of Li^q(q= -1, 0 or +1) on a silicene single layer. Pristine and three different defective silicene configurations with and without Li doping were studied: single vacancy (SV), double vacancy (DV) and Stone-Wales (STW). Structural studies and the adsorption energies of various sites were obtained and compared in order to understand the stability of the Li on the surface. Moreover, electronic structure and charge density difference analysis were performed before and after adsorption at the most stables sites, which showed the presence of a magnetic moment in the undoped SV system, the displacement of the Fermi level produced by Li doping and a charge transfer from Li to the surface. Additionally, quantum capacity (QC) and charge density studies were performed on these systems. This analysis showed that the generation of defects and doping improves the QC of silicene in positive bias, because of the existence of 3p orbital in the zone of the defect. Consequently, the innovative calculations performed in this work of charged lithium doping on silicene can be used for future comparison with experimental studies of this Li-ion battery anode material candidate.

Emerging properties of carbon based 2D material beyond graphene

Graphene turns out to be the pioneering material for setting up boulevard to a new zoo of recently proposed carbon based novel two dimensional (2D) analogues. It is evident that their electronic, optical and other related properties are utterly different from that of graphene because of the distinct intriguing morphology. For instance, the revolutionary emergence of Dirac cones in graphene is particularly hard to find in most of the other 2D materials. As a consequence the crystal symmetries indeed act as a major role for predicting electronic band structure. Since tight binding calculations have become an indispensable tool in electronic band structure calculation, we indicate the implication of such method in graphene's allotropes beyond hexagonal symmetry. It is to be noted that some of these graphene allotropes successfully overcome the inherent drawback of the zero band gap nature of graphene. As a result, these 2D nanomaterials exhibit great potential in a broad spectrum of applications, viz nanoelectronics, nanooptics, gas sensors, gas storages, catalysis, and other specific applications. The miniaturization of high performance graphene allotrope based gas sensors to microscopic or even nanosized range has also been critically discussed. In addition, various optical properties like the dielectric functions, optical conductivity, electron energy loss spectra reveal that these systems can be used in opto-electronic devices. Nonetheless, the honeycomb lattice of graphene is not superconducting. However, it is proposed that the tetragonal form of graphene can be intruded to form new hybrid 2D materials to achieve novel superconducting device at attainable conditions. These dynamic experimental prospects demand further functionalization of these systems to enhance the efficiency and the field of multifunctionality. This topical review aims to highlight the latest advances in carbon based 2D materials beyond graphene from the basic theoretical as well as future application perspectives.

Effective Landé factors for an electrostatically defined quantum point contact in silicene

The transconductance and effective Landé \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$g^*$$\end{document}g∗ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin–orbit coupling in buckled silicene reduces the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$g^*$$\end{document}g∗ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$g^*$$\end{document}g∗ factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin–orbit coupling defined by the Kane–Mele form of interaction.

Electronic and thermal transport in novel carbon-based bilayer with tetragonal rings: a combined study using first-principles and machine learning approach

In this article, the structural, electronic and thermal transport characteristics of bilayer tetragonal graphene (TG) are systematically explored with a combination of first-principles calculations and machine-learning interatomic potential approaches. Optimized ground state geometry of the bilayer TG structure is predicted and examined by employing various stability criteria. Electronic bandstructure analysis confirmed that bilayer TG exhibits a metallic band structure similar to the monolayer T-graphene structure. Thermal transport characteristics of the bilayer TG structure are explored by analysing thermal conductivity, the Seebeck coefficient, and electrical conductivity. The electronic part of the thermal conductivity shows linearly increasing behaviour with temperature, however the lattice part exhibits the opposite character. The lattice thermal conductivity part is investigated in terms of the three phonon scattering rates and weighted phase space. On the other hand, the Seebeck coefficient goes through a transition from negative to positive values with increasing temperature. The Wiedemann-Franz law regarding electrical transport of the bilayer TG is verified and confirms the universal Lorentz number. Specific heat of the bilayer TG structure follows the Debye model at low temperature and constant behaviour at high temperature. Moreover, the Debye temperature of the bilayer TG structure is verified by ab initio calculations as well as fitting the specific heat data using the Debye model.

First-principles study of the optical and thermoelectric properties of tetragonal-silicene

We report the optical and thermoelectric properties of the two-dimensional Dirac material T-silicene (TS) sheet and nanoribbons (NRs) by first-principles calculations. Both the optical and thermoelectric properties of TS can be modified by tailoring the sheet into nanoribbons of different widths and edge geometries. The optical response of the structures is highly anisotropic. A π interband transition occurs in the visible range of incident light with parallel polarization. The optical response for asymmetric arm-chair TS nanoribbons (ATSNRs) is larger than for symmetric ATSNRs. The absorptions of asymmetric ATSNR are redshifted due to a decrease in the bandgap with the width of the NRs. Plasma frequencies of the sheet and the NRs are identified from the imaginary part of the dielectric function and electron energy loss spectra curves. Thermoelectric properties like electrical conductivity, Seebeck coefficient, power factor, and electronic figure of merit are also studied. Compared with graphene, the TS sheet possesses a higher electrical conductivity and a better figure of merit. Among the NRs, asymmetric ATSNRs exhibit a better thermoelectric performance. All these intriguing features of TS may shed light on fabricating smart opto-electronic and thermoelectric devices.

Emergence of magnetic anisotropy by surface adsorption of transition metal dimers on γ-graphyne framework

In this paper a systematic study is carried out to demonstrate the structural stability and magnetic novelty of adsorbing transition metal (TM) dimers (A-B) on graphyne (GY) surface, GY@A-B. Our research points out that the dimers are strongly adsorbed onto GY due to their large natural pores and the electron affinity of the sp-hybridized carbon atoms. Electronic properties of these dimer-graphyne composite systems are of particular importance as they behave as degenerate semiconductors with partial occupation of states atE_F. Furthermore, their remarkable spin polarization (>80%) at Fermi energy (E_F) can be of paramount importance in spintronics applications. Most of the GY@A-B structures exhibit large magnetic anisotropies as well as magnetic moments along the out-of-plane direction with respect to the GY surface. Particularly, GY@Co-Ir, GY@Ir-Ir and GY@Ir-Os structures possess positive magnetic anisotropic energies (MAE) of 121 meV, 81 meV and 137 meV, respectively, which are comparable to other well-known TM dimer doped systems. The emergence of high MAE can be understood using the second-order perturbation theory on the basis of the strong spin-orbit coupling (SOC) between the two TMs and the degeneracy of their d-orbitals nearE_F. A close correspondence between the simulated and the analytical results has been established through our work. Further, a simple estimation shows that, GY@A-B structures have the potential to store data up to 64 PB m^-2. These intriguing electronic characteristics along with magnetism suggest GY@A-B to be a promising material for future magnetic storage devices.

Computational Modeling of 2D Materials under High Pressure and Their Chemical Bonding: Silicene as Possible Field-Effect Transistor

To study the possibility for silicene to be employed as a field-effect transistor (FET) pressure sensor, we explore the chemistry of monolayer and multilayered silicene focusing on the change in hybridization under pressure. Ab initio computations show that the effect of pressure depends greatly on the thickness of the silicene film, but also reveals the influence of real experimental conditions, where the pressure is not hydrostatic. For this purpose, we introduce anisotropic strain states. With pure uniaxial stress applied to silicene layers, a path for sp³ silicon to sp³d silicon is found, unlike with pure hydrostatic pressure. Even with mixed-mode stress (in-plane pressure half of the out-of-plane one), we find no such path. In addition to introducing our theoretical approach to study 2D materials, we show how the hybridization change of silicene under pressure makes it a good FET pressure sensor.

Electric-field-generated topological states in a silicene nanotube

Applying an electric field perpendicular to the axis of a silicene armchair nanotube allows us to numerically study the formation of eight topological edge states as silicene's intrinsic spin-orbit gap is closed by the sublattice-staggered electrostatic potential created by the electric field. Following their evolution with electric field, it is revealed that, at very small fields, these eight states are very broad, spin-locked, and sublattice constrained, inheriting their properties from the K and K' states in a silicene two-dimensional honeycomb lattice. Four of those states are centered at the very top of the nanotube and the other four states are centered at the very bottom. As the field increases, each state starts to become narrower and to spread its spectral weight to the other sublattice. With further increase of the field, each state starts to spatially split, while the sublattice spreading continues. Once the spectral weight of each state is distributed evenly among both sublattices, the state has also effectively split into two spatially disconnected parts, after which, further increasing of the field will spread apart the two halves, moving them to the lateral regions of the nanotube, at the same time that the state halves become narrower. This is consistent with the formation of topological edge states, which delimit four ribbon-like topologically different regions: top and bottom topologically trivial 'ribbons' (where the electric field has induced a topological phase transition) that are adjacent to two topologically nontrivial 'ribbons' located at opposing sides of the nanotube. We also briefly access the possibility of observing these edge states by calculating the electronic properties for an electric field configuration that can be more readily produced in the laboratory.

Spin structure factors of doped monolayer Germanene in the presence of spin-orbit coupling

In this paper, we present a Kane-Mele model in the presence of magnetic field and next nearest neighbors hopping amplitudes for investigations of the spin susceptibilities of Germanene layer. Green’s function approach has been implemented to find the behavior of dynamical spin susceptibilities of Germanene layer within linear response theoryand in the presence of magnetic field and spin-orbit coupling at finite temperature. Our results show the magnetic excitation mode for both longitudinal and transverse components of spin tends to higher frequencies with spin-orbit coupling strength. Moreover the frequency positions of sharp peaks in longitudinal dynamical spin susceptibility are not affected by variation of magnetic field while the peaks in transverse dynamical susceptibility moves to lower frequencies with magnetic field. The effects of electron doping on frequency behaviors of spin susceptibilities have been addressed in details. Finally the temperature dependence of static spin structure factors due to the effects of spin-orbit coupling, magnetic field and chemical potential has been studied.

Fully spin-valley-polarized current induced by electric field in zigzag stanene and germanene nanoribbons

We theoretically investigated the spin-dependent valleytronics in stanene and germanene nanoribbons, considering the electron-electron interaction and the external electric field without any magnetic exchange element. Our results showed that applying an electric field in these two-dimensional materials with a large intrinsic spin-orbit coupling can provide a versatile platform to create spin-valley currents by exploiting the edge magnetism at their zigzag edges. Generally, manipulating the electric field can generate a fully spin-valley-polarized current with a large magnitude even at room temperature. The rich and tunable spin and valley degrees of freedom can turn these structures into ideal candidates for spin-valley applications.

Rich p-type-doping phenomena in boron-substituted silicene systems

The essential properties of monolayer silicene greatly enriched by boron substitutions are thoroughly explored through first-principles calculations. Delicate analyses are conducted on the highly non-uniform Moire superlattices, atom-dominated band structures, charge density distributions and atom- and orbital-decomposed van Hove singularities. The hybridized 2p z -3p z and [2s, 2p x , 2p y ]-[3s, 3p x , 3p y ] bondings, with orthogonal relations, are obtained from the developed theoretical framework. The red-shifted Fermi level and the modified Dirac cones/π bands/σ bands are clearly identified under various concentrations and configurations of boron-guest atoms. Our results demonstrate that the charge transfer leads to the non-uniform chemical environment that creates diverse electronic properties.

Modulation of the electronic band structure of silicene by polar two-dimensional substrates

Using the density functional theory (DFT) calculations, we find that  Janus group-III chalcogenide monolayers can serve as a suitable substrate for silicene, and the Dirac electron band properties of silicene are also fully preserved. The maximum opened band gap can reach 179 meV at the Dirac point due to the interaction of silicene and the polar two-dimensional (2D) substrate. In addition, the electronic band structure of the heterostructure can be modulated by applying an electric field where its predicted band gap increases or decreases according to the direction of the applied external electric field. Furthermore, an insight into the electron structures can be understood by analyzing the electron energy-loss (EEL) spectra. From these results, we also predict that heterostructures with polar 2D substrates have broad application prospects in multi-functional devices. Besides, Janus group-III chalcogenide monolayers can be used as good substrates for growing silicene and the modulation of the electronic structure can also be applied to nanodevices and optoelectronic devices.

A review on role of tetra-rings in graphene systems and their possible applications

Inspired by the success of graphene, various two-dimensional (2D) non-hexagonal graphene allotropes having sp²-bonded tetragonal rings in free-standing (hypothetical) form and on different substrates have been proposed recently. These systems have also been fabricated after modifying the topology of graphene by chemical processes. In this review, we would like to indicate the role of tetra-rings and the local symmetry breaking on the structural, electronic and optical properties of the graphene system. First-principles computations have demonstrated that the tetragonal graphene (TG) allotrope exhibits appreciable thermodynamic stability. The band structure of the TG nanoribbons (TGNRs) strongly depends on the size and edge geometry. This fact has been supported by the transport properties of TGNRs. The optical properties and Raman modes of this graphene allotrope have been well explored for characterisation purposes. Recently, a tight-binding model was used to unravel the metal-to-semiconductor transition under the influence of external magnetic fluxes. Even the introduction of transition metal atoms into this non-hexagonal network can control the magnetic response of the TG sheet. Furthermore, the collective effect of B-N doping and confinement effect on the structural and electronic properties of TG systems has been investigated. We also suggest future directions to be explored to make the synthesis of T graphene and its various derivatives/allotropes viable for the verification of theoretical predictions. It is observed that these doped systems act as a potential candidate for carbon monoxide gas sensing and current rectification devices. Therefore, all these experimental, numerical and analytical studies related to non-hexagonal TG systems are extremely important from a basic science point of view as well as for applications in sensing, optoelectronic and photonic devices.

The topology and robustness of two Dirac cones in S-graphene: A tight binding approach

Present work reports an elegant method to address the emergence of two Dirac cones in a non-hexagonal graphene allotrope S-graphene (SG). We have availed nearest neighbour tight binding (NNTB) model to validate the existence of two Dirac cones reported from density functional theory (DFT) computations. Besides, the real space renormalization group (RSRG) scheme clearly reveals the key reason behind the emergence of two Dirac cones associated with the given topology. Furthermore, the robustness of these Dirac cones has been explored in terms of hopping parameters. As an important note, the Fermi velocity of the SG system (vF [Formula: see text] c/80) is almost 3.75 times that of the graphene. It has been observed that the Dirac cones can be easily shifted along the symmetry lines without breaking the degeneracy. We have attained two different conditions based on the sole relations of hopping parameters and on-site energies to break the degeneracy. Further, in order to perceive the topological aspect of the system we have obtained the phase diagram and Chern number of Haldane model. This exact analytical method along with the supported DFT computation will be very effective in studying the intrinsic behaviour of the Dirac materials other than graphene.

Tunable Electronic, Optical, and Thermal Properties of two- dimensional Germanene via an external electric field

In this paper, we present a tight-binding model based on DFT calculations for investigation the electronic and optical properties of monolayer Germanene. The thermal properties are investigated using Green function method. The required tight binding parameters including the onsite energies and third nearest neighbors hopping and overlap integrals are obtained based on our DFT calculations. Germanene is a semiconductor with zero band gap and linear band dispersion around the K point. The band gap opening occurs in the presence of bias voltage. The band gap is increased linearly with increase of the bias voltage strength. The tight binding results for position of the two first peaks in the optical Infrared region is same with the DFT results. By applying and increasing bias voltage, the dielectric function shows the blue shift by reduction the peak intensity in the energy range E < 1 eV. The thermal conductivity and heat capacity increase with increasing the temperature due to the increasing of thermal energy of charge carriers and excitation them to the conduction bands. The thermal properties of Germanene in the absence of bias U = 0 is larger than that U ≠ 0 and they decrease by further bias strength increasing, due to the increasing band gap with bias.

Electric field induced band tuning, optical and thermoelectric responses in tetragonal germanene: a theoretical approach

Transverse electric field breaks the sublattice symmetry and generates a band gap in the semi-metallic T-Ge structure.

Simple correction to bandgap problems in IV and III-V semiconductors: an improved, local first-principles density functional theory

We report results from a fast, efficient, and first-principles full-potential Nth-order muffin-tin orbital (FP-NMTO) method combined with van Leeuwen-Baerends correction to local density exchange-correlation potential. We show that more complete and compact basis set is critical in improving the electronic and structural properties. We exemplify the self-consistent FP-NMTO calculations on group IV and III-V semiconductors. Notably, predicted bandgaps, lattice constants, and bulk moduli are in good agreement with experiments (e.g. we find for Ge 0.86 eV, 5.57 [Formula: see text], 75 GPa versus measured 0.74 eV, 5.66 [Formula: see text], 77.2 GPa). We also showcase its application to the electronic properties of 2-dimensional h-BN and h-SiC, again finding good agreement with experiments.

Symmetric and antisymmetric electric fields induced spin valves in a zigzag silicene nanoribbon ferromagnetic junction

We report a possible two dimensional spin switch based on an even-chain zigzag silicene nanoribbon (ZSR) ferromagnetic junction with two perpendicular staggered electric fields. By calculating the transverse conductance of the device, we find that the metal-insulator phase transition could always occur in the system regardless of two staggered electric fields are symmetric or antisymmetric along the y -axis of the ribbon, which can act as an electrical tunable spin valve to filter and detect one species of spin state. When two symmetric staggered electric fields are applied, both spin up and spin down electrons are prohibited to transport in the same energy region due to the energy gap opened by the homogeneous staggered potentials, which is independent of whether two electric fields are fully or partially distributed. When two staggered electric fields are anti-symmetrically put on the ZSR junction, it has the same energy band symmetry(pseudo-parity) as the pristine ZSR without applying the electric field, the energy band selection rule appears and can be used to generate, separate and detect 100% polarized spin currents combined with the staggered potential. Our findings may provide a possible way to design an electrical controllable spin switch in two dimensional graphene-like materials.

First-principles calculation of the electronic and optical properties of a new two-dimensional carbon allotrope: tetra-penta-octagonal graphene

A novel sp² hybridized planar 2D carbon allotrope consisting of tetra, penta and octagonal (TPO) rings is proposed in this work. Its thermodynamic stability is confirmed by molecular dynamics in the canonical ensemble at 600 K and the analysis shows that it can also remain stable at 1000 K. The mechanical stability of this material has been estimated by the Born-Huang criterion. Its in-plane stiffness constants are found to be 85% of that of graphene ensuring its high strength quality. The investigation of the electronic properties reveals that the material is metallic in nature with a Dirac cone at 3.7 eV above its Fermi level at an asymmetric position in the conduction band. The study of its optical property for parallel and perpendicular polarization yields the absence of any plasma frequency. Besides, its absorption is mostly spread within 10-20 eV. Further electrical transport study shows negative differential resistance (NDR) above 3.5 V for one nano device. Nano ribbons made out of a TPO-graphene sheet exhibit metallic character. When the porous sheet of TPO-graphene is exposed to Li and S atoms, it is found that the Li atoms pass through the pores unlike the S atoms owing to the less barrier energy compared to S atoms. Substitutional doping with boron and nitrogen at different sites of TPO-graphene showed splitting of the Dirac feature. Also suitable B and N doping brings about semiconducting properties with tunability in band gap with a maximum band gap of 1.09 eV for an isoelectronic structure. All these theoretical predictions might trigger further new avenues involving this novel TPO graphene.

Strain induced electronic and magnetic properties of 2D magnet CrI3: a DFT approach

In the post-graphene era, out of several monolayer 2D materials, Chromium triiodide ([Formula: see text]) has triggered an exotic platform for studying the intrinsic ferromagnetism and large anisotropy at the nanoscale regime. Apart from that, its strong spin-orbit coupling of I also plays a key role in tailoring the electronic properties. In this work, the composition of compressive and tensile strain (uniaxial as well as biaxial) upto 12% have been applied to study the variation of the electronic and magnetic properties of [Formula: see text] employing density functional theory in (LDA+U) exchange correlation scheme. The stability limits of the structures under the influence of strains have been carried out via the deformation potential (DP) and stress-strain relation. For compressive strains in specific directions, the down-spin band gap is seen to be decreasing steadily. The magnetic moment computed from the density of states (DOS) is enhanced significantly under the influence of compressive strain. However, it has been observed that after the application of strain in some specific crystal directions, the magnetic moment of monolayer [Formula: see text] remains almost unchanged. Thus, with the help of strain, the tunning band gap along with underlying characteristic ferromagnetism of this material can unfold a new avenue for potential usage in spintronic devices.

Acetylenic linkage dependent electronic and optical behaviour of morphologically distinct ‘-ynes’

We have critically examined the key role of acetylenic linkages (–CC–) in determining the opto-electronic responses of the dynamically stable tetragonal (T) ‘-ynes’ with the help of density functional theory.

Effect and Characterization of Stone–Wales Defects on Graphene Quantum Dot: A First-Principles Study

A first principles based density functional theory (DFT) has been employed to identify the signature of Stone–Wales (SW) defects in semiconducting graphene quantum dot (GQD). Results show that the G mode in the Raman spectra of GQD has been red shifted to 1544.21 cm − 1 in the presence of 2.08% SW defect concentration. In addition, the intensity ratio between a robust low intense contraction–elongation mode and G mode is found to be reduced for the defected structure. We have also observed a Raman mode at 1674.04 cm − 1 due to the solo contribution of the defected bond. The increase in defect concentration, however, reduces the stability of the structures. As a consequence, the systems undergo structural buckling due to the presence of SW defect generated additional stresses. We have further explored that the 1615.45 cm − 1 Raman mode and 1619.29 cm − 1 infra-red mode are due to the collective stretching of two distinct SW defects separated at a distance 7.98 Å. Therefore, this is the smallest separation between the SW defects for their distinct existence. The pristine structure possesses maximum electrical conductivity and the same reduces to 0.37 times for 2.08% SW defect. On the other hand, the work function is reduced in the presence of defects except for the structure with SW defects separated at 7.98 Å. All these results will serve as an important reference to facilitate the potential applications of GQD based nano-devices with inherent topological SW defects.

A DFT perspective analysis of optical properties of defected germanene mono-layer

Germanene, germanium version of graphene, is a novel member in the two-dimensional (2D) materials family. In this present study, a theoretical analysis involving optical properties of defected free standing (FS) germanene layer has been performed within density functional theory (DFT) framework. FS buckled germanene exhibits many fascinating and unconventional optical properties due to introductions of adatoms and voids. Arsenic (As), gallium (Ga) and beryllium (Be) are chosen as doping elements. Doping sites (same or different sub-lattice positions) play a crucial role to improve various optical properties. While Be doping, concentrations of Be are increased up to 18.75 % and void concentrations are increased up to 15.62 % (keeping fixed 3.12 % Be concentration). Emergence of several plasma frequencies occur in case of both parallel and perpendicular polarizations for defected germanene layers. Energy positions of peaks corresponding to maximum of imaginary parts of dielectric constants are red shifted for some As and Ga incorporated systems compared to pristine germanene. Absorption spectra peaks are more prominent for Be doped systems rather than void added systems. In addition, conductivity in infrared (IR) region is very high for the Be doped configurations in case of parallel polarization. Along with these, changes in other optical properties like refractive index, reflectivity, electron energy loss spectroscopy etc. are also analyzed briefly in this present study. We hope, this theoretical investigation may be regarded as an important tool to design novel opto-electronic tuning devices involving germanene in near future.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Electrostatic quantum dots in silicene

We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the carriers within, and the difference of electrostatic potentials on the buckled silicene sublattices produces nonzero carrier masses outside the quantum dot. We study the electrostatic confinement defined inside a silicene flake with both the atomistic tight-binding approach as well as with the continuum approximation for a circularly symmetric electrostatic potential. We find localization of the states within the quantum dot and their decoupling from the edge that makes the spectrum of the localized states independent of the crystal termination. For an armchair edge of the flake removal of the intervalley scattering by the electrostatic confinement is found.

Interfacial properties of borophene contacts with two-dimensional semiconductors

The interfacial properties of β₁₂ phase borophene contacts with other common two-dimensional materials (transition-metal dichalcogenides, group IV-enes and group V-enes) have been systematically studied using a density functional theory (DFT) method. The zero tunneling barrier is found for all of the investigated β₁₂ phase borophene contacts except for the case of β₁₂ borophene/graphene. The chemically reactive properties and high work function (4.9 eV) of the stable β₁₂ borophene lead to the formation of Ohmic contacts with silicene, germanene, stanene, black phosphorene, arsenene and antimonene. The advantage of the zero tunnel barrier remains when changing the borophene from the β₁₂ phase to the Δ phase. Therefore, a high carrier injection rate is expected in these borophene contacts. Our study provides guidance on borophene for future two dimensional materials based device designs.

Adsorption of Li on single-layer silicene for anodes of Li-ion batteries

Li chains with up-down pairs on top sites are popular in silicene.

Electronic and optical properties of strained graphene and other strained 2D materials: a review

This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the diffraction pattern for different kinds of representative deformation fields. Then, the focus turns to the unique elastic properties of graphene, and to how strain is produced. Thereafter, various theoretical approaches used to study the electronic properties of strained graphene are examined, discussing the advantages of each. These approaches provide a platform to describe exotic properties, such as a fractal spectrum related with quasicrystals, a mixed Dirac-Schrödinger behavior, emergent gravity, topological insulator states, in molecular graphene and other 2D discrete lattices. The physical consequences of strain on the optical properties are reviewed next, with a focus on the Raman spectrum. At the same time, recent advances to tune the optical conductivity of graphene by strain engineering are given, which open new paths in device applications. Finally, a brief review of strain effects in multilayered graphene and other promising 2D materials like silicene and materials based on other group-IV elements, phosphorene, dichalcogenide- and monochalcogenide-monolayers is presented, with a brief discussion of interplays among strain, thermal effects, and illumination in the latter material family.

Optical properties and magnetic flux-induced electronic band tuning of a T-graphene sheet and nanoribbon

Tetragonal graphene (T-graphene) is a theoretically proposed dynamically stable, metallic allotrope of graphene.