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Paul TK, Saha AK, Gupta SK. Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide. Sci Rep 2024; 14:9861. [PMID: 38684727 PMCID: PMC11058872 DOI: 10.1038/s41598-024-60155-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2023] [Accepted: 04/19/2024] [Indexed: 05/02/2024] Open
Abstract
180∘ domains walls (DWs) of head-to-head/tail-to-tail (H-H/T-T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding of the FE attributes as well as harnessing them for new applications. Our first principles calculation suggests that such DW formation in hafnium zirconium oxide (HZO) based FEs depends on the unique attributes of the HZO unit cell, such as polar-spacer segmentation. Cross pattern of the polar and spacer segments in two neighboring domains along the polarization direction (where polar segment of one domain aligns with the spacer segment of another) boosts the stability of such DWs. We further show that low density of oxygen vacancies at the metal-HZO interface and high work function of metal electrodes are conducive for T-T DW formation. On the other hand, high density of oxygen vacancy and low work function of metal electrode favor H-H DW formation. Polarization bound charges at the DW get screened when band bending from depolarization field accumulates holes (electrons) in T-T (H-H) DW. For a comprehensive understanding, we also investigate their FE nature and domain growth mechanism. Our analysis suggests that a minimum thickness criterion of domains has to be satisfied for the stability of H-H/T-T DW and switching of the domains through such DW formation.
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2
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Park DS, Rata AD, Dahm RT, Chu K, Gan Y, Maznichenko I, Ostanin S, Trier F, Baik H, Choi WS, Choi CJ, Kim YH, Rees GJ, Gíslason HP, Buczek PA, Mertig I, Ionescu MA, Ernst A, Dörr K, Muralt P, Pryds N. Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300200. [PMID: 37154173 DOI: 10.1002/adma.202300200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Revised: 05/01/2023] [Indexed: 05/10/2023]
Abstract
Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3 :LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.
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Affiliation(s)
- Dae-Sung Park
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
- Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Aurora Diana Rata
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Rasmus Tindal Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
| | - Kanghyun Chu
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Yulin Gan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Igor Maznichenko
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Sergey Ostanin
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Felix Trier
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
| | - Hionsuck Baik
- Korea Basic Science Institute, Seoul, 02841, Republic of Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chel-Jong Choi
- School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 54596, Republic of Korea
| | - Young Heon Kim
- Graduate School of Analytical Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Gregory Jon Rees
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | | | - Paweł Adam Buczek
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, 20099, Hamburg, Germany
| | - Ingrid Mertig
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Mihai Adrian Ionescu
- Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Arthur Ernst
- Max-Planck-Institut für Mikrostrukturphysik, 06120, Halle, Germany
- Institute of Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Kathrin Dörr
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Paul Muralt
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
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3
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Abramov A, Slautin B, Pryakhina V, Shur V, Kholkin A, Alikin D. Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite. SENSORS (BASEL, SWITZERLAND) 2023; 23:526. [PMID: 36617132 PMCID: PMC9823478 DOI: 10.3390/s23010526] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 12/25/2022] [Accepted: 12/29/2022] [Indexed: 06/17/2023]
Abstract
Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special interest due to the combination of high spontaneous polarization and antiferromagnetism, implying the possibility to provide multiple physical mechanisms for data storage and operations. Macroscopic conductivity measurements are often hampered to unambiguously characterize the electric transport, because of the strong influence of the diverse material microstructure. Here, we studied the electronic transport and resistive switching phenomena in polycrystalline bismuth ferrite using advanced conductive atomic force microscopy (CAFM) at different temperatures and electric fields. The new approach to the CAFM spectroscopy and corresponding data analysis are proposed, which allow deep insight into the material band structure at high lateral resolution. Contrary to many studies via macroscopic methods, postulating electromigration of the oxygen vacancies, we demonstrate resistive switching in bismuth ferrite to be caused by the pure electronic processes of trapping/releasing electrons and injection of the electrons by the scanning probe microscopy tip. The electronic transport was shown to be comprehensively described by the combination of the space charge limited current model, while a Schottky barrier at the interface is less important due to the presence of the built-in subsurface charge.
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4
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Guan Z, Li YK, Zhao YF, Peng Y, Han G, Zhong N, Xiang PH, Chu JH, Duan CG. Mechanical Polarization Switching in Hf 0.5Zr 0.5O 2 Thin Film. NANO LETTERS 2022; 22:4792-4799. [PMID: 35639474 DOI: 10.1021/acs.nanolett.2c01066] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO2-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope. The results of scanning Kelvin force microscopy (SKPM) exclude the possibility of flexoelectric-like mechanisms and prove that charge injection could be avoided by mechanical writing and thus reveal the true polarization state, promoting wider flexoelectric applications and ultrahigh-density storage of HZO thin films.
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Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
| | - Yun-Kangqi Li
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
| | - Yi-Feng Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
| | - Yue Peng
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Genquan Han
- School of Microelectronics, Xidian University, Xi'an 710071, China
- Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Zhejiang Lab, Hangzhou, Zhejiang 311121, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jun-Hao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University, 500 Dongchuan Rd., Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Alikin D, Abramov A, Turygin A, Ievlev A, Pryakhina V, Karpinsky D, Hu Q, Jin L, Shur V, Tselev A, Kholkin A. Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy. SMALL METHODS 2022; 6:e2101289. [PMID: 34967150 DOI: 10.1002/smtd.202101289] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/15/2021] [Indexed: 06/14/2023]
Abstract
Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.
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Affiliation(s)
- Denis Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Alexander Abramov
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Anton Turygin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Anton Ievlev
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Victoria Pryakhina
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Dmitry Karpinsky
- Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, 220072, Belarus
| | - Qingyuan Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Li Jin
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Vladimir Shur
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
| | - Alexander Tselev
- Department of Physics & CICECO, University of Aveiro, 3810-193, Aveiro, Portugal
| | - Andrei Kholkin
- School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russia
- Department of Physics & CICECO, University of Aveiro, 3810-193, Aveiro, Portugal
- Piezo- and Magnetoelectric Materials Research & Development Centre, Research School of Chemistry & Applied Biomedical Sciences, National Research Tomsk Polytechnic University, Tomsk, 634050, Russia
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6
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Andreeva N, Petukhov A, Vilkov O, Petraru A, Luchinin V. Local Electric Property Modification of Ferroelectric Tunnel Junctions Induced by Variation of Polarization Charge Screening Conditions under Measurement with Scanning Probe Techniques. NANOMATERIALS 2021; 11:nano11123323. [PMID: 34947670 PMCID: PMC8703973 DOI: 10.3390/nano11123323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Revised: 12/01/2021] [Accepted: 12/03/2021] [Indexed: 11/26/2022]
Abstract
Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscopy in ambient conditions were used to study local electroresistive properties of ferroelectric tunnel junctions SrTiO3/La0.7Sr0.3MnO3/BaTiO3. Interestingly, experimental current-voltage characteristics appear to strongly depend on the measurement technique applied. It was found that screening conditions of the polarization charges at the interface with a top electrode differ for two scanning probe techniques. As a result, asymmetry of the tunnel barrier height for the opposite ferroelectric polarization orientations may be influenced by the method applied to study the local tunnel electroresistance. Our observations are well described by the theory of electroresistance in ferroelectric tunnel junctions. Based on this, we reveal the main factors that influence the polarization-driven local resistive properties of the device under study. Additionally, we propose an approach to enhance asymmetry of ferroelectric tunnel junctions during measurement. While keeping the high locality of scanning probe techniques, it helps to increase the difference in the value of tunnel electroresistance for the opposite polarization orientations.
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Affiliation(s)
- Natalia Andreeva
- Department of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, 197376 Saint Petersburg, Russia;
- Correspondence:
| | - Anatoliy Petukhov
- Research Park, St. Petersburg State University, 198504 Saint Petersburg, Russia;
| | - Oleg Vilkov
- Department of Solid State Electronics, St. Petersburg State University, 198504 Saint Petersburg, Russia;
| | - Adrian Petraru
- Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, 24143 Kiel, Germany;
| | - Victor Luchinin
- Department of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University ‘LETI’, 197376 Saint Petersburg, Russia;
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7
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Pintilie L, Boni GA, Chirila CF, Stancu V, Trupina L, Istrate CM, Radu C, Pintilie I. Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect. NANOMATERIALS 2021; 11:nano11082124. [PMID: 34443956 PMCID: PMC8402043 DOI: 10.3390/nano11082124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Revised: 08/16/2021] [Accepted: 08/19/2021] [Indexed: 11/25/2022]
Abstract
Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr0.2Ti0.8)O3 (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO3 (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones.
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8
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Orvis T, Cao T, Surendran M, Kumarasubramanian H, Thind AS, Cunniff A, Mishra R, Ravichandran J. Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures. NANO LETTERS 2021; 21:4160-4166. [PMID: 33974439 DOI: 10.1021/acs.nanolett.0c04818] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Interfacial behavior of quantum materials leads to emergent phenomena such as quantum phase transitions and metastable functional phases. Probes for in situ and real time surface-sensitive characterization are critical for control during epitaxial synthesis of heterostructures. Termination switching in complex oxides has been studied using a variety of probes, often ex situ; however, direct in situ observation of this phenomena during growth is rare. To address this, we establish in situ and real time Auger electron spectroscopy for pulsed laser deposition with reflection high energy electron diffraction, providing structural and compositional surface information during film deposition. Using this capability, we show the direct observation and control of surface termination in heterostructures of SrTiO3 and SrRuO3. Density-functional-theory calculations capture the energetics and stability of the observed structures, elucidating their electronic behavior. This work demonstrates an exciting approach to monitor and control the composition of materials at the atomic scale for control over emergent phenomena and potential applications.
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Affiliation(s)
- Thomas Orvis
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
- Core Center for Excellence in Nano Imaging, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
| | - Tengfei Cao
- Department of Mechanical Engineering & Materials Science, and Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, Missouri 63130, United States
| | - Mythili Surendran
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
- Core Center for Excellence in Nano Imaging, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
| | - Harish Kumarasubramanian
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
| | - Arashdeep Singh Thind
- Department of Mechanical Engineering & Materials Science, and Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, Missouri 63130, United States
| | - Austin Cunniff
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
| | - Rohan Mishra
- Department of Mechanical Engineering & Materials Science, and Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, Missouri 63130, United States
| | - Jayakanth Ravichandran
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089, United States
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9
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Hong S, Liow CH, Yuk JM, Byon HR, Yang Y, Cho E, Yeom J, Park G, Kang H, Kim S, Shim Y, Na M, Jeong C, Hwang G, Kim H, Kim H, Eom S, Cho S, Jun H, Lee Y, Baucour A, Bang K, Kim M, Yun S, Ryu J, Han Y, Jetybayeva A, Choi PP, Agar JC, Kalinin SV, Voorhees PW, Littlewood P, Lee HM. Reducing Time to Discovery: Materials and Molecular Modeling, Imaging, Informatics, and Integration. ACS NANO 2021; 15:3971-3995. [PMID: 33577296 DOI: 10.1021/acsnano.1c00211] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Multiscale and multimodal imaging of material structures and properties provides solid ground on which materials theory and design can flourish. Recently, KAIST announced 10 flagship research fields, which include KAIST Materials Revolution: Materials and Molecular Modeling, Imaging, Informatics and Integration (M3I3). The M3I3 initiative aims to reduce the time for the discovery, design and development of materials based on elucidating multiscale processing-structure-property relationship and materials hierarchy, which are to be quantified and understood through a combination of machine learning and scientific insights. In this review, we begin by introducing recent progress on related initiatives around the globe, such as the Materials Genome Initiative (U.S.), Materials Informatics (U.S.), the Materials Project (U.S.), the Open Quantum Materials Database (U.S.), Materials Research by Information Integration Initiative (Japan), Novel Materials Discovery (E.U.), the NOMAD repository (E.U.), Materials Scientific Data Sharing Network (China), Vom Materials Zur Innovation (Germany), and Creative Materials Discovery (Korea), and discuss the role of multiscale materials and molecular imaging combined with machine learning in realizing the vision of M3I3. Specifically, microscopies using photons, electrons, and physical probes will be revisited with a focus on the multiscale structural hierarchy, as well as structure-property relationships. Additionally, data mining from the literature combined with machine learning will be shown to be more efficient in finding the future direction of materials structures with improved properties than the classical approach. Examples of materials for applications in energy and information will be reviewed and discussed. A case study on the development of a Ni-Co-Mn cathode materials illustrates M3I3's approach to creating libraries of multiscale structure-property-processing relationships. We end with a future outlook toward recent developments in the field of M3I3.
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Affiliation(s)
- Seungbum Hong
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
- KAIST Institute for NanoCentury (KINC), Korea Advanced Institute of Science and Engineering (KAIST), Daejeon, 34141, Republic of Korea
| | - Chi Hao Liow
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Jong Min Yuk
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Hye Ryung Byon
- Department of Chemistry, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Yongsoo Yang
- Department of Physics, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - EunAe Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Jiwon Yeom
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Gun Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Hyeonmuk Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Seunggu Kim
- Department of Chemistry, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Yoonsu Shim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Moony Na
- Department of Chemistry, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Chaehwa Jeong
- Department of Physics, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Gyuseong Hwang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Hongjun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Hoon Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Seongmun Eom
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Seongwoo Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Hosun Jun
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Yongju Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Arthur Baucour
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Kihoon Bang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Myungjoon Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Seokjung Yun
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Jeongjae Ryu
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Youngjoon Han
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Albina Jetybayeva
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Pyuck-Pa Choi
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
| | - Joshua C Agar
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Peter W Voorhees
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Peter Littlewood
- James Franck Institute, University of Chicago, Chicago, Illinois 60637, United States
| | - Hyuck Mo Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Engineering (KAIST), Daejeon 34141, Republic of Korea
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10
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Rayapati VR, Bürger D, Du N, Kowol C, Blaschke D, Stöcker H, Matthes P, Patra R, Skorupa I, Schulz SE, Schmidt H. Charged domains in ferroelectric, polycrystalline yttrium manganite thin films resolved with scanning electron microscopy. NANOTECHNOLOGY 2020; 31:31LT01. [PMID: 32311692 DOI: 10.1088/1361-6528/ab8b09] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We have investigated ferroelectric charged domains in polycrystalline hexagonal yttrium manganite thin films (Y1Mn1O3, Y0.95Mn1.05O3, Y1Mn0.99Ti0.01O3, and Y0.94Mn1.05Ti0.01O3) by scanning electron microscopy (SEM) in secondary electron emission mode with a small acceleration voltage. Using SEM at an acceleration voltage of 1.0 kV otherwise homogenous surface charging effects are reduced, polarization charges can be observed and polarization directions (±Pz) of the ferroelectric domains in the polycrystalline thin films can be identified. Thin films of different chemical composition have been deposited by pulsed laser deposition on Pt/SiO2/Si structures under otherwise same growth conditions. Using SEM it has been shown that different charged domain density networks are existing in polycrystalline yttrium manganite thin films.
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Affiliation(s)
- Venkata Rao Rayapati
- Department Back-End of Line, Fraunhofer Institute for Electronic Nano Systems, 09126 Chemnitz, Germany
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11
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Domingo N, Gaponenko I, Cordero-Edwards K, Stucki N, Pérez-Dieste V, Escudero C, Pach E, Verdaguer A, Paruch P. Surface charged species and electrochemistry of ferroelectric thin films. NANOSCALE 2019; 11:17920-17930. [PMID: 31553338 DOI: 10.1039/c9nr05526f] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The combination of scanning probe microscopy and ambient pressure X-ray photoelectron spectroscopy opens up new perspectives for the study of combined surface chemical, electrochemical and electromechanical properties at the nanoscale, providing both nanoscale resolution of physical information and the chemical sensitivity required to identify surface species and bulk ionic composition. In this work, we determine the nature and evolution over time of surface chemical species obtained after water-mediated redox reactions on Pb(Zr0.2,Ti0.8)O3 thin films with opposite as-grown polarization states. Starting with intrinsically different surface chemical composition on the oppositely polarized films (as a result of their ferroelectric-dominated interaction with environmental water), we identify the reversible and irreversible electrochemical reactions under an external electric field, distinguishing switching and charging events. We find that while reversible ionic displacements upon polarization switching dominate screening in the bulk of the sample, polarization dependent irreversible redox reactions determine surface chemical composition, which reveals itself as a characteristic fingerprint of the ferroelectric polarization switching history.
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Affiliation(s)
- Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
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12
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Turygin AP, Alikin DO, Kosobokov MS, Ievlev AV, Shur VY. Self-Organized Formation of Quasi-Regular Ferroelectric Nanodomain Structure on the Nonpolar Cuts by Grounded SPM Tip. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36211-36217. [PMID: 30251530 DOI: 10.1021/acsami.8b10220] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The understanding of self-organization processes at the micro- and nanoscale is of fundamental interest and is important to meet the great challenges in further miniaturization of electronic devices to the nanoscale. Here, we report self-organized quasi-regular nanodomain structure formation on the nonpolar cut of a ferroelectric lithium niobate single crystal. These structures were formed along the trajectory of grounded scanning probe microscope tip approaching or moving away from the freshly switched region. Detailed analysis of the formed structures revealed internal organization by the length of the needle-like domains, which ranged from uniform to quasi-periodic and even chaotic modes as a function of distance from the switched region. Comprehensive investigations and numerical simulations allowed to attribute explored phenomena to charge injection during the field application and further switching under the action of electric field induced by injected charges near the tip. Self-organization and quasi-periodicity were explained by the effective screening and long-range electrostatic interaction between the individual needle-like domains.
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Affiliation(s)
- Anton P Turygin
- School of Natural Sciences and Mathematics , Ural Federal University , Ekaterinburg 620000 , Russia
| | - Denis O Alikin
- School of Natural Sciences and Mathematics , Ural Federal University , Ekaterinburg 620000 , Russia
| | - Mikhail S Kosobokov
- School of Natural Sciences and Mathematics , Ural Federal University , Ekaterinburg 620000 , Russia
| | - Anton V Ievlev
- The Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37830 , United States
| | - Vladimir Ya Shur
- School of Natural Sciences and Mathematics , Ural Federal University , Ekaterinburg 620000 , Russia
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13
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Ren Y, Dong S, Wu M. Unusual Ferroelectricity of Trans-Unitcell Ion-Displacement and Multiferroic Soliton in Sodium and Potassium Hydroxides. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35361-35366. [PMID: 30246524 DOI: 10.1021/acsami.8b11971] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We show the first-principles evidence of a hitherto unreported type of ferroelectricity with ultralong ion-displacement in sodium and potassium hydroxides. Even a small number of proton vacancies can completely change the mode of proton-transfer from intra-unitcell to trans-unitcell, giving rise to multiferroic soliton with "mobile" magnetism and a tremendous polarization that can be orders of magnitude higher compared with most perovskite ferroelectrics. Their vertical polarizations of thin-film are robust against a depolarizing field, rendering various designs of two-dimensional ferroelectric field-transistors with nondestructive readout and ultrahigh on/off ratio via sensing the switchable metallic/insulating state.
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Affiliation(s)
- Yangyang Ren
- School of Physics , Huazhong University of Science and Technology , Wuhan 430074 , Hubei , China
| | - Shuai Dong
- School of Physics , Southeast University , Nanjing 211189 , Jiangsu , China
| | - Menghao Wu
- School of Physics , Huazhong University of Science and Technology , Wuhan 430074 , Hubei , China
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14
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Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit. Nat Commun 2018; 9:3319. [PMID: 30127419 PMCID: PMC6102252 DOI: 10.1038/s41467-018-05662-y] [Citation(s) in RCA: 38] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2017] [Accepted: 07/02/2018] [Indexed: 02/06/2023] Open
Abstract
Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is required to miniaturize electronic devices. Direct visualization of stable ferroelectric polarization and its switching behavior in atomically thick films is critical for achieving this goal. Here, ferroelectric order at room temperature in the two-dimensional limit is demonstrated in tetragonal BiFeO3 ultrathin films. Using aberration-corrected scanning transmission electron microscopy, we directly observed robust out-of-plane spontaneous polarization in one-unit-cell-thick BiFeO3 films. High-resolution piezoresponse force microscopy measurements show that the polarization is stable and switchable, whereas a tunneling electroresistance effect of up to 370% is achieved in BiFeO3 films. Based on first-principles calculations and Kelvin probe force microscopy measurements, we explain the mechanism of polarization stabilization by the ionic displacements in oxide electrode and the surface charges. Our results indicate that critical thickness for ferroelectricity in the BiFeO3 film is virtually absent, making it a promising candidate for high-density nonvolatile memories. High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO3 thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.
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15
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Rodenbücher C, Bihlmayer G, Speier W, Kubacki J, Wojtyniak M, Rogala M, Wrana D, Krok F, Szot K. Local surface conductivity of transition metal oxides mapped with true atomic resolution. NANOSCALE 2018; 10:11498-11505. [PMID: 29888770 DOI: 10.1039/c8nr02562b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The introduction of transition metal oxides for building nanodevices in information technology promises to overcome the scaling limits of conventional semiconductors and to reduce global power consumption significantly. However, oxide surfaces can exhibit heterogeneity on the nanoscale e.g. due to relaxation, rumpling, reconstruction, or chemical variations which demands for direct characterization of electronic transport phenomena down to the atomic level. Here we demonstrate that conductivity mapping is possible with true atomic resolution using the tip of a local conductivity atomic force microscope (LC-AFM) as the mobile nanoelectrode. The application to the prototypical transition metal oxide TiO2 self-doped by oxygen vacancies reveals the existence of highly confined current paths in the first stage of thermal reduction. Assisted by density functional theory (DFT) we propose that the presence of oxygen vacancies in the surface layer of such materials can introduce short range disturbances of the electronic structure with confinement of metallic states on the sub-nanometre scale. After prolonged reduction, the surfaces undergo reconstruction and the conductivity changes from spot-like to homogeneous as a result of surface transformation. The periodic arrangement of the reconstruction is clearly reflected in the conductivity maps as concluded from the simultaneous friction force and LC-AFM measurements. The second prototype metal oxide SrTiO3 also reveals a comparable transformation in surface conductivity from spot-like to homogeneous upon reduction showing the relevance of nanoscale inhomogeneities for the electronic transport properties and the utility of a high-resolution LC-AFM as a convenient tool to detect them.
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Affiliation(s)
- C Rodenbücher
- Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-1 & PGI-7), 52425 Jülich, Germany.
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16
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Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films. Sci Rep 2018; 8:8497. [PMID: 29855531 PMCID: PMC5981214 DOI: 10.1038/s41598-018-26933-0] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2018] [Accepted: 05/17/2018] [Indexed: 11/25/2022] Open
Abstract
Ferroelectric films may lose polarization as their thicknesses decrease to a few nanometers because of the depolarizing field that opposes the polarization therein. The depolarizing field is minimized when electrons or ions in the electrodes or the surface/interface layers screen the polarization charge or when peculiar domain configuration is formed. Here, we demonstrate ferroelectric phase transitions using thermooptical studies in ∼5-nm-thick epitaxial Pb0.5Sr0.5TiO3 films grown on different insulating substrates. By comparing theoretical modeling and experimental observations, we show that ferroelectricity is stabilized through redistribution of charge carriers (electrons or holes) inside ultrathin films. The related high-density of screening carriers is confined within a few-nanometers-thick layer in the vicinity of the insulator, thus resembling a two-dimensional carrier gas.
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17
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Kalinin SV, Kim Y, Fong DD, Morozovska AN. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036502. [PMID: 29368693 DOI: 10.1088/1361-6633/aa915a] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.
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Affiliation(s)
- Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
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18
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Alikin DO, Romanyuk KN, Slautin BN, Rosato D, Shur VY, Kholkin AL. Quantitative characterization of the ionic mobility and concentration in Li-battery cathodes via low frequency electrochemical strain microscopy. NANOSCALE 2018; 10:2503-2511. [PMID: 29344595 DOI: 10.1039/c7nr08001h] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electrochemical strain microscopy (ESM) can provide useful information on the ionic processes in materials at the local scale. This is especially important for ever growing applications of Li-batteries whose performance is limited by the intrinsic and extrinsic degradation. However, the ESM method used so far has been only qualitative due to multiple contributions to the apparent ESM signal. In this work, we provide a viable approach for the local probing of ionic concentration and diffusion coefficients based on the frequency dependence of the ESM signal. A theoretical basis considering the dynamic behavior of ion migration and relaxation and change of ion concentration profiles under the action of the electric field of the ESM tip is developed. We argue that several parasitic contributions to the ESM signal discussed in the literature can be thus eliminated. The analysis of ESM images using the proposed approach allows a quantitative mapping of the ionic diffusion coefficients and concentration in ionic conductors. The results are validated on Li-battery cathodes (LiMn2O4) extracted from commercial Li-batteries and can provide novel possibilities for their development and further insight into the mechanisms of their degradation.
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Affiliation(s)
- D O Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
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19
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De Luca G, Strkalj N, Manz S, Bouillet C, Fiebig M, Trassin M. Nanoscale design of polarization in ultrathin ferroelectric heterostructures. Nat Commun 2017; 8:1419. [PMID: 29127282 PMCID: PMC5681682 DOI: 10.1038/s41467-017-01620-2] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2017] [Accepted: 10/04/2017] [Indexed: 02/07/2023] Open
Abstract
The success of oxide electronics depends on the ability to design functional properties such as ferroelectricity with atomic accuracy. However, despite tremendous advances in ferroelectric heterostructures, the development towards multilevel architectures with precise layer-by-layer command over the polarization is impeded by the lack of continuous control over the balance of electrostatics, strain, chemistry and film thickness during growth. Moreover, the polarization in the deeper layers becomes inaccessible when these are buried by the ongoing deposition. Taking ferroelectric BaTiO3 and multiferroic BiFeO3 as model systems, we observe and engineer the emergence, orientation and interaction of ferroelectric polarization in ultrathin heterostructures with monolayer accuracy. We achieve this by optical second harmonic generation which tracks the evolution of spontaneous polarization in real time throughout the deposition process. Such direct and in situ access to the polarization during growth leads us to heterostructures with user-defined polarization sequences—towards a new class of functional ferroic materials. Ferroelectric heterostructures exhibit a range of functional properties; however control of their growth remains a challenge. De Luca et al., demonstrate in-situ optical second harmonic generation to monitor and tailor the polarisation and growth of multilayer barium titanate and bismuth ferrite films.
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Affiliation(s)
- Gabriele De Luca
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093, Zurich, Switzerland
| | - Nives Strkalj
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093, Zurich, Switzerland
| | - Sebastian Manz
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093, Zurich, Switzerland
| | - Corinne Bouillet
- Institut de Physique et Chimie des Matériaux de Strasbourg-CNRS UMR 7504, 67034, Strasbourg, France
| | - Manfred Fiebig
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093, Zurich, Switzerland
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093, Zurich, Switzerland.
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20
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Chen Z, Chen Z, Liu ZQ, Holtz ME, Li CJ, Wang XR, Lü WM, Motapothula M, Fan LS, Turcaud JA, Dedon LR, Frederick C, Xu RJ, Gao R, N'Diaye AT, Arenholz E, Mundy JA, Venkatesan T, Muller DA, Wang LW, Liu J, Martin LW. Electron Accumulation and Emergent Magnetism in LaMnO_{3}/SrTiO_{3} Heterostructures. PHYSICAL REVIEW LETTERS 2017; 119:156801. [PMID: 29077457 DOI: 10.1103/physrevlett.119.156801] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2017] [Indexed: 06/07/2023]
Abstract
Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO_{3}/SrTiO_{3} (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO_{3}. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO_{3}, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO_{3} films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.
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Affiliation(s)
- Zuhuang Chen
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Zhanghui Chen
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Z Q Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - M E Holtz
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - C J Li
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore
| | - X Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 637371, Singapore
| | - W M Lü
- Condensed Matter Science and Technology Institute, School of Science, Harbin Institute of Technology, Harbin 150081, People's Republic of China
| | - M Motapothula
- NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore
| | - L S Fan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - J A Turcaud
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - L R Dedon
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - C Frederick
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - R J Xu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - R Gao
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - A T N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - E Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - J A Mundy
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - T Venkatesan
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore
| | - D A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
| | - L-W Wang
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Jian Liu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - L W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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21
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Long-range Stripe Nanodomains in Epitaxial (110) BiFeO 3 Thin Films on (100) NdGaO 3 Substrate. Sci Rep 2017; 7:4857. [PMID: 28687796 PMCID: PMC5501854 DOI: 10.1038/s41598-017-05055-z] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2017] [Accepted: 05/23/2017] [Indexed: 11/08/2022] Open
Abstract
Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La0.67Sr0.33CoO3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.
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22
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Baek DJ, Lu D, Hikita Y, Hwang HY, Kourkoutis LF. Ultrathin Epitaxial Barrier Layer to Avoid Thermally Induced Phase Transformation in Oxide Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2017; 9:54-59. [PMID: 28006100 DOI: 10.1021/acsami.6b14106] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr3Al2O6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO3 layer can be employed as an effective barrier to preserve Sr3Al2O6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.
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Affiliation(s)
| | | | - Yasuyuki Hikita
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
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