Screening mechanisms at polar oxide heterointerfaces

Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide

180∘ domains walls (DWs) of head-to-head/tail-to-tail (H-H/T-T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding of the FE attributes as well as harnessing them for new applications. Our first principles calculation suggests that such DW formation in hafnium zirconium oxide (HZO) based FEs depends on the unique attributes of the HZO unit cell, such as polar-spacer segmentation. Cross pattern of the polar and spacer segments in two neighboring domains along the polarization direction (where polar segment of one domain aligns with the spacer segment of another) boosts the stability of such DWs. We further show that low density of oxygen vacancies at the metal-HZO interface and high work function of metal electrodes are conducive for T-T DW formation. On the other hand, high density of oxygen vacancy and low work function of metal electrode favor H-H DW formation. Polarization bound charges at the DW get screened when band bending from depolarization field accumulates holes (electrons) in T-T (H-H) DW. For a comprehensive understanding, we also investigate their FE nature and domain growth mechanism. Our analysis suggests that a minimum thickness criterion of domains has to be satisfied for the stability of H-H/T-T DW and switching of the domains through such DW formation.

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3 :LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.

Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special interest due to the combination of high spontaneous polarization and antiferromagnetism, implying the possibility to provide multiple physical mechanisms for data storage and operations. Macroscopic conductivity measurements are often hampered to unambiguously characterize the electric transport, because of the strong influence of the diverse material microstructure. Here, we studied the electronic transport and resistive switching phenomena in polycrystalline bismuth ferrite using advanced conductive atomic force microscopy (CAFM) at different temperatures and electric fields. The new approach to the CAFM spectroscopy and corresponding data analysis are proposed, which allow deep insight into the material band structure at high lateral resolution. Contrary to many studies via macroscopic methods, postulating electromigration of the oxygen vacancies, we demonstrate resistive switching in bismuth ferrite to be caused by the pure electronic processes of trapping/releasing electrons and injection of the electrons by the scanning probe microscopy tip. The electronic transport was shown to be comprehensively described by the combination of the space charge limited current model, while a Schottky barrier at the interface is less important due to the presence of the built-in subsurface charge.

Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film

HfO₂-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO₂-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm Hf_0.5Zr0_.5O₂ (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope. The results of scanning Kelvin force microscopy (SKPM) exclude the possibility of flexoelectric-like mechanisms and prove that charge injection could be avoided by mechanical writing and thus reveal the true polarization state, promoting wider flexoelectric applications and ultrahigh-density storage of HZO thin films.

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.

Local Electric Property Modification of Ferroelectric Tunnel Junctions Induced by Variation of Polarization Charge Screening Conditions under Measurement with Scanning Probe Techniques

Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscopy in ambient conditions were used to study local electroresistive properties of ferroelectric tunnel junctions SrTiO₃/La_0.7Sr_0.3MnO₃/BaTiO₃. Interestingly, experimental current-voltage characteristics appear to strongly depend on the measurement technique applied. It was found that screening conditions of the polarization charges at the interface with a top electrode differ for two scanning probe techniques. As a result, asymmetry of the tunnel barrier height for the opposite ferroelectric polarization orientations may be influenced by the method applied to study the local tunnel electroresistance. Our observations are well described by the theory of electroresistance in ferroelectric tunnel junctions. Based on this, we reveal the main factors that influence the polarization-driven local resistive properties of the device under study. Additionally, we propose an approach to enhance asymmetry of ferroelectric tunnel junctions during measurement. While keeping the high locality of scanning probe techniques, it helps to increase the difference in the value of tunnel electroresistance for the opposite polarization orientations.

Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect

Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr_0.2Ti_0.8)O₃ (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO₃ (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones.

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

Interfacial behavior of quantum materials leads to emergent phenomena such as quantum phase transitions and metastable functional phases. Probes for in situ and real time surface-sensitive characterization are critical for control during epitaxial synthesis of heterostructures. Termination switching in complex oxides has been studied using a variety of probes, often ex situ; however, direct in situ observation of this phenomena during growth is rare. To address this, we establish in situ and real time Auger electron spectroscopy for pulsed laser deposition with reflection high energy electron diffraction, providing structural and compositional surface information during film deposition. Using this capability, we show the direct observation and control of surface termination in heterostructures of SrTiO₃ and SrRuO₃. Density-functional-theory calculations capture the energetics and stability of the observed structures, elucidating their electronic behavior. This work demonstrates an exciting approach to monitor and control the composition of materials at the atomic scale for control over emergent phenomena and potential applications.

Reducing Time to Discovery: Materials and Molecular Modeling, Imaging, Informatics, and Integration

Multiscale and multimodal imaging of material structures and properties provides solid ground on which materials theory and design can flourish. Recently, KAIST announced 10 flagship research fields, which include KAIST Materials Revolution: Materials and Molecular Modeling, Imaging, Informatics and Integration (M3I3). The M3I3 initiative aims to reduce the time for the discovery, design and development of materials based on elucidating multiscale processing-structure-property relationship and materials hierarchy, which are to be quantified and understood through a combination of machine learning and scientific insights. In this review, we begin by introducing recent progress on related initiatives around the globe, such as the Materials Genome Initiative (U.S.), Materials Informatics (U.S.), the Materials Project (U.S.), the Open Quantum Materials Database (U.S.), Materials Research by Information Integration Initiative (Japan), Novel Materials Discovery (E.U.), the NOMAD repository (E.U.), Materials Scientific Data Sharing Network (China), Vom Materials Zur Innovation (Germany), and Creative Materials Discovery (Korea), and discuss the role of multiscale materials and molecular imaging combined with machine learning in realizing the vision of M3I3. Specifically, microscopies using photons, electrons, and physical probes will be revisited with a focus on the multiscale structural hierarchy, as well as structure-property relationships. Additionally, data mining from the literature combined with machine learning will be shown to be more efficient in finding the future direction of materials structures with improved properties than the classical approach. Examples of materials for applications in energy and information will be reviewed and discussed. A case study on the development of a Ni-Co-Mn cathode materials illustrates M3I3's approach to creating libraries of multiscale structure-property-processing relationships. We end with a future outlook toward recent developments in the field of M3I3.

Charged domains in ferroelectric, polycrystalline yttrium manganite thin films resolved with scanning electron microscopy

We have investigated ferroelectric charged domains in polycrystalline hexagonal yttrium manganite thin films (Y₁Mn₁O₃, Y_0.95Mn_1.05O₃, Y₁Mn_0.99Ti_0.01O₃, and Y_0.94Mn_1.05Ti_0.01O₃) by scanning electron microscopy (SEM) in secondary electron emission mode with a small acceleration voltage. Using SEM at an acceleration voltage of 1.0 kV otherwise homogenous surface charging effects are reduced, polarization charges can be observed and polarization directions (±P_z) of the ferroelectric domains in the polycrystalline thin films can be identified. Thin films of different chemical composition have been deposited by pulsed laser deposition on Pt/SiO₂/Si structures under otherwise same growth conditions. Using SEM it has been shown that different charged domain density networks are existing in polycrystalline yttrium manganite thin films.

Surface charged species and electrochemistry of ferroelectric thin films

The combination of scanning probe microscopy and ambient pressure X-ray photoelectron spectroscopy opens up new perspectives for the study of combined surface chemical, electrochemical and electromechanical properties at the nanoscale, providing both nanoscale resolution of physical information and the chemical sensitivity required to identify surface species and bulk ionic composition. In this work, we determine the nature and evolution over time of surface chemical species obtained after water-mediated redox reactions on Pb(Zr0.2,Ti0.8)O3 thin films with opposite as-grown polarization states. Starting with intrinsically different surface chemical composition on the oppositely polarized films (as a result of their ferroelectric-dominated interaction with environmental water), we identify the reversible and irreversible electrochemical reactions under an external electric field, distinguishing switching and charging events. We find that while reversible ionic displacements upon polarization switching dominate screening in the bulk of the sample, polarization dependent irreversible redox reactions determine surface chemical composition, which reveals itself as a characteristic fingerprint of the ferroelectric polarization switching history.

Self-Organized Formation of Quasi-Regular Ferroelectric Nanodomain Structure on the Nonpolar Cuts by Grounded SPM Tip

The understanding of self-organization processes at the micro- and nanoscale is of fundamental interest and is important to meet the great challenges in further miniaturization of electronic devices to the nanoscale. Here, we report self-organized quasi-regular nanodomain structure formation on the nonpolar cut of a ferroelectric lithium niobate single crystal. These structures were formed along the trajectory of grounded scanning probe microscope tip approaching or moving away from the freshly switched region. Detailed analysis of the formed structures revealed internal organization by the length of the needle-like domains, which ranged from uniform to quasi-periodic and even chaotic modes as a function of distance from the switched region. Comprehensive investigations and numerical simulations allowed to attribute explored phenomena to charge injection during the field application and further switching under the action of electric field induced by injected charges near the tip. Self-organization and quasi-periodicity were explained by the effective screening and long-range electrostatic interaction between the individual needle-like domains.

Unusual Ferroelectricity of Trans-Unitcell Ion-Displacement and Multiferroic Soliton in Sodium and Potassium Hydroxides

We show the first-principles evidence of a hitherto unreported type of ferroelectricity with ultralong ion-displacement in sodium and potassium hydroxides. Even a small number of proton vacancies can completely change the mode of proton-transfer from intra-unitcell to trans-unitcell, giving rise to multiferroic soliton with "mobile" magnetism and a tremendous polarization that can be orders of magnitude higher compared with most perovskite ferroelectrics. Their vertical polarizations of thin-film are robust against a depolarizing field, rendering various designs of two-dimensional ferroelectric field-transistors with nondestructive readout and ultrahigh on/off ratio via sensing the switchable metallic/insulating state.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is required to miniaturize electronic devices. Direct visualization of stable ferroelectric polarization and its switching behavior in atomically thick films is critical for achieving this goal. Here, ferroelectric order at room temperature in the two-dimensional limit is demonstrated in tetragonal BiFeO₃ ultrathin films. Using aberration-corrected scanning transmission electron microscopy, we directly observed robust out-of-plane spontaneous polarization in one-unit-cell-thick BiFeO₃ films. High-resolution piezoresponse force microscopy measurements show that the polarization is stable and switchable, whereas a tunneling electroresistance effect of up to 370% is achieved in BiFeO₃ films. Based on first-principles calculations and Kelvin probe force microscopy measurements, we explain the mechanism of polarization stabilization by the ionic displacements in oxide electrode and the surface charges. Our results indicate that critical thickness for ferroelectricity in the BiFeO₃ film is virtually absent, making it a promising candidate for high-density nonvolatile memories.

High temperature perpendicular ferroelectricity in nano thin films is crucial for miniaturization of electronic devices. Here the authors show the presence of stable and switchable out-of-plane ferroelectricity in tetragonal BiFeO₃ thin films at the two-dimensional limit and 370% tunneling electroresistance in ferroelectric tunnel junctions.

Local surface conductivity of transition metal oxides mapped with true atomic resolution

The introduction of transition metal oxides for building nanodevices in information technology promises to overcome the scaling limits of conventional semiconductors and to reduce global power consumption significantly. However, oxide surfaces can exhibit heterogeneity on the nanoscale e.g. due to relaxation, rumpling, reconstruction, or chemical variations which demands for direct characterization of electronic transport phenomena down to the atomic level. Here we demonstrate that conductivity mapping is possible with true atomic resolution using the tip of a local conductivity atomic force microscope (LC-AFM) as the mobile nanoelectrode. The application to the prototypical transition metal oxide TiO2 self-doped by oxygen vacancies reveals the existence of highly confined current paths in the first stage of thermal reduction. Assisted by density functional theory (DFT) we propose that the presence of oxygen vacancies in the surface layer of such materials can introduce short range disturbances of the electronic structure with confinement of metallic states on the sub-nanometre scale. After prolonged reduction, the surfaces undergo reconstruction and the conductivity changes from spot-like to homogeneous as a result of surface transformation. The periodic arrangement of the reconstruction is clearly reflected in the conductivity maps as concluded from the simultaneous friction force and LC-AFM measurements. The second prototype metal oxide SrTiO3 also reveals a comparable transformation in surface conductivity from spot-like to homogeneous upon reduction showing the relevance of nanoscale inhomogeneities for the electronic transport properties and the utility of a high-resolution LC-AFM as a convenient tool to detect them.

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Ferroelectric films may lose polarization as their thicknesses decrease to a few nanometers because of the depolarizing field that opposes the polarization therein. The depolarizing field is minimized when electrons or ions in the electrodes or the surface/interface layers screen the polarization charge or when peculiar domain configuration is formed. Here, we demonstrate ferroelectric phase transitions using thermooptical studies in ∼5-nm-thick epitaxial Pb_0.5Sr_0.5TiO₃ films grown on different insulating substrates. By comparing theoretical modeling and experimental observations, we show that ferroelectricity is stabilized through redistribution of charge carriers (electrons or holes) inside ultrathin films. The related high-density of screening carriers is confined within a few-nanometers-thick layer in the vicinity of the insulator, thus resembling a two-dimensional carrier gas.

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

Quantitative characterization of the ionic mobility and concentration in Li-battery cathodes via low frequency electrochemical strain microscopy

Electrochemical strain microscopy (ESM) can provide useful information on the ionic processes in materials at the local scale. This is especially important for ever growing applications of Li-batteries whose performance is limited by the intrinsic and extrinsic degradation. However, the ESM method used so far has been only qualitative due to multiple contributions to the apparent ESM signal. In this work, we provide a viable approach for the local probing of ionic concentration and diffusion coefficients based on the frequency dependence of the ESM signal. A theoretical basis considering the dynamic behavior of ion migration and relaxation and change of ion concentration profiles under the action of the electric field of the ESM tip is developed. We argue that several parasitic contributions to the ESM signal discussed in the literature can be thus eliminated. The analysis of ESM images using the proposed approach allows a quantitative mapping of the ionic diffusion coefficients and concentration in ionic conductors. The results are validated on Li-battery cathodes (LiMn₂O₄) extracted from commercial Li-batteries and can provide novel possibilities for their development and further insight into the mechanisms of their degradation.

Nanoscale design of polarization in ultrathin ferroelectric heterostructures

The success of oxide electronics depends on the ability to design functional properties such as ferroelectricity with atomic accuracy. However, despite tremendous advances in ferroelectric heterostructures, the development towards multilevel architectures with precise layer-by-layer command over the polarization is impeded by the lack of continuous control over the balance of electrostatics, strain, chemistry and film thickness during growth. Moreover, the polarization in the deeper layers becomes inaccessible when these are buried by the ongoing deposition. Taking ferroelectric BaTiO₃ and multiferroic BiFeO₃ as model systems, we observe and engineer the emergence, orientation and interaction of ferroelectric polarization in ultrathin heterostructures with monolayer accuracy. We achieve this by optical second harmonic generation which tracks the evolution of spontaneous polarization in real time throughout the deposition process. Such direct and in situ access to the polarization during growth leads us to heterostructures with user-defined polarization sequences—towards a new class of functional ferroic materials.

Ferroelectric heterostructures exhibit a range of functional properties; however control of their growth remains a challenge. De  Luca et al., demonstrate in-situ optical second harmonic generation to monitor and tailor the polarisation and growth of multilayer barium titanate and bismuth ferrite films.

Electron Accumulation and Emergent Magnetism in LaMnO_{3}/SrTiO_{3} Heterostructures

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO_{3}/SrTiO_{3} (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO_{3}. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO_{3}, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO_{3} films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO₃ (BFO) thin films epitaxially grown on low symmetric (100) NdGaO₃ (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La_0.67Sr_0.33CoO₃ (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.

Ultrathin Epitaxial Barrier Layer to Avoid Thermally Induced Phase Transformation in Oxide Heterostructures

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr₃Al₂O₆ as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr₃Al₂O₆ can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO₃ layer can be employed as an effective barrier to preserve Sr₃Al₂O₆ during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.