Nernst quantum oscillations in bulk semi-metals

Critical point for Bose-Einstein condensation of excitons in graphite

An exciton is an electron-hole pair bound by attractive Coulomb interaction. Short-lived excitons have been detected by a variety of experimental probes in numerous contexts. An excitonic insulator, a collective state of such excitons, has been more elusive. Here, thanks to Nernst measurements in pulsed magnetic fields, we show that in graphite there is a critical temperature (T = 9.2 K) and a critical magnetic field (B = 47 T) for Bose-Einstein condensation of excitons. At this critical field, hole and electron Landau subbands simultaneously cross the Fermi level and allow exciton formation. By quantifying the effective mass and the spatial separation of the excitons in the basal plane, we show that the degeneracy temperature of the excitonic fluid corresponds to this critical temperature. This identification would explain why the field-induced transition observed in graphite is not a universal feature of three-dimensional electron systems pushed beyond the quantum limit.

AC measurement of the Nernst effect of thin films at low temperatures

We describe an alternating current method to measure the Nernst effect in superconducting thin films at low temperatures. The Nernst effect is an important tool in the understanding of superconducting fluctuations and, in particular, vortex motion near critical points. However, in most materials, the Nernst signal in a typical experimental setup rarely exceeds a few μV, in some cases being as low as a few nV. DC measurements of such small signals require extensive signal processing and protection against stray pickups and offsets, limiting the sensitivity of such measurements to >1 nV. Here, we describe a method utilizing a one-heater-two-thermometer setup with the heating element and thermometers fabricated on-chip with the sample, which helped to reduce the thermal load and temperature lag between the substrate and the thermometer. Using AC heating power and 2ω measurement, we are able to achieve sub-nanovolt sensitivity in 20 nm-30 nm thin superconducting films on a glass substrate, compared to a sensitivity of ∼10 nV using DC techniques on the same setup.