Luminescence lifetimes of neutral nitrogen-vacancy centres in synthetic diamond containing nitrogen

Imaging Extreme Ultraviolet Radiation Using Nanodiamonds with Nitrogen-Vacancy Centers

Extreme ultraviolet (EUV) radiation with wavelengths of 10-121 nm has drawn considerable attention recently for its use in photolithography to fabricate nanoelectronic chips. This study demonstrates, for the first time, fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers as scintillators to image and characterize EUV radiations. The FNDs employed are ∼100 nm in size; they form a uniform and stable thin film on an indium-tin-oxide-coated slide by electrospray deposition. The film is nonhygroscopic and photostable and can emit bright red fluorescence from NV0 centers when excited by EUV light. An FND-based imaging device has been developed and applied for beam diagnostics of 50 nm and 13.5 nm synchrotron radiations, achieving a spatial resolution of 30 μm using a film of ∼1 μm thickness. The noise equivalent power density is 29 μW/(cm2 Hz1/2) for the 13.5 nm radiation. The method is generally applicable to imaging EUV radiation from different sources.

Fluorescence Lifetime Control of Nitrogen Vacancy Centers in Nanodiamonds for Long-Term Information Storage

Today's huge amount of data generation and transfer induced an urgent requirement for long-term data storage. Here, we demonstrate and discuss a concept for long-term storage using NV centers inside nanodiamonds. The approach is based upon the radiation-induced generation of additional vacancies (so-called GR1 states), which quench the initial NV centers, resulting in a reduced overall fluorescence lifetime of the NV center. Using the tailored fluorescence lifetime of the NV center to code the information, we demonstrate a "beyond binary" data storage density per bit. We also demonstrate that this process is reversible by heating the sample or the spot of information. This proof of principle shows that our technique may be a promising alternative data storage technology, especially in terms of long-term storage, due to the high stability of the involved color centers. In addition to the proof-of-principle demonstration using macroscopic samples, we suggest and discuss the usage of focused electron beams to write information in nanodiamond materials, to read it out with focused low-intensity light, and to erase it on the macro-, micro-, or nanoscale.

Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation

Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.

Cathodoluminescence in Ultrafast Electron Microscopy

Implementing the modern technologies of light-emitting devices, light harvesting, and quantum information processing requires the understanding of the structure-function relations at spatial scales below the optical diffraction limit and time scales of energy and information flows. Here, we distinctively combine cathodoluminescence (CL) with ultrafast electron microscopy (UEM), termed CL-UEM, because CL and UEM synergetically afford the required spectral and spatiotemporal sensitivities, respectively. For color centers in nanodiamonds, we demonstrate the measurement of CL lifetime with a local sensitivity of 50 nm and a time resolution of 100 ps. It is revealed that the emitting states of the color centers can be populated through charge transfer among the color centers across diamond lattices upon high-energy electron beam excitation. The technical advance achieved in this study will facilitate the specific control over energy conversion at nanoscales, relevant to quantum dots and single-photon sources.

Multiphoton Upconversion Emission from Diamond Single Crystals

Room-temperature upconversion emission up to eight-photon absorption is demonstrated from diamond single crystals under femtosecond laser excitation for the first time. The low concentration of defects and impurities is attributed to the support of free excitons emission at 235 nm. Nonlinear optical properties are also investigated by using an open-aperture Z-scan technique. The corresponding three-, five-, and eight-photon absorption coefficients of the diamonds are found to be 1.8 × 10^-2 cm³/GW², 5 × 10^-9 cm⁷/GW⁴, and 1.6 × 10^-19 cm¹³/GW⁷, respectively. Considering its high hardness and high thermal conductivity, diamonds are a versatile nonlinear optical material suitable for high-power deep ultraviolet applications under multiphoton excitation.

Photon bunching in cathodoluminescence

We have measured the second order correlation function [g^{(2)}(τ)] of the cathodoluminescence intensity resulting from the excitation by fast electrons of defect centers in wide band-gap semiconductor nanocrystals of diamond and hexagonal boron nitride. We show that the cathodoluminescence second order correlation function g^{(2)}(τ) of multiple defect centers is dominated by a large, nanosecond zero-delay bunching (g^{(2)}(0)>30), in stark contrast to their flat photoluminescence g^{(2)}(τ) function. We have developed a model showing that this bunching can be attributed to the synchronized emission from several defect centers excited by the same electron through the deexcitation of a bulk plasmon into few electron-hole pairs.

Creation of high density ensembles of nitrogen-vacancy centers in nitrogen-rich type Ib nanodiamonds

This work explores the possibility of increasing the density of negatively charged nitrogen-vacancy centers ([NV(-)]) in nanodiamonds using nitrogen-rich type Ib diamond powders as the starting material. The nanodiamonds (10-100 nm in diameter) were prepared by ball milling of microdiamonds, in which the density of neutral and atomically dispersed nitrogen atoms ([N(0)]) was measured by diffuse reflectance infrared Fourier transform spectroscopy. A systematic measurement of the fluorescence intensities and lifetimes of the crushed monocrystalline diamonds as a function of [N(0)] indicated that [NV(-)] increases nearly linearly with [N(0)] at 100-200 ppm. The trend, however, failed to continue for nanodiamonds with higher [N(0)] (up to 390 ppm) but poorer crystallinity. We attribute the result to a combined effect of fluorescence quenching as well as the lower conversion efficiency of vacancies to NV(-) due to the presence of more impurities and defects in these as-grown diamond crystallites. The principles and practice of fabricating brighter and smaller fluorescent nanodiamonds are discussed.

Colour-causing defects and their related optoelectronic transitions in single crystal CVD diamond

Defects causing colour in nitrogen-doped chemical vapour-deposited (CVD) diamond can adversely affect the exceptional optical, electronic and spintronic properties of the material. Several techniques were used to study these defects, namely optical absorption spectroscopy, thermoluminescence (TL) and electron paramagnetic resonance (EPR). From our studies, the defects causing colour in nitrogen-doped CVD diamond are clearly not the same as those causing similar colour in natural diamonds. The brown colour arises due to a featureless absorption profile that decreases in intensity with increasing wavelength, and a broad feature at 360 nm (3.49 eV) that scales in intensity with it. Another prominent absorption band, centred at 520 nm (2.39 eV), is ascribed to the neutral nitrogen-vacancy-hydrogen defect. The defects responsible for the brown colour possess acceptor states that are 1.5 eV from the valence band (VB) edge. The brown colour is removed by heat treatment at 1600 ° C, whereupon new defects possessing shallow (<1 eV) trap states are generated.