The quasiparticle band dispersion in epitaxial multilayer silicene

Epitaxial growth and structural properties of silicene and other 2D allotropes of Si

Since the breakthrough of graphene, considerable efforts have been made to search for two-dimensional (2D) materials composed of other group 14 elements, in particular silicon and germanium, due to their valence electronic configuration similar to that of carbon and their widespread use in the semiconductor industry. Silicene, the silicon counterpart of graphene, has been particularly studied, both theoretically and experimentally. Theoretical studies were the first to predict a low-buckled honeycomb structure for free-standing silicene possessing most of the outstanding electronic properties of graphene. From an experimental point of view, as no layered structure analogous to graphite exists for silicon, the synthesis of silicene requires the development of alternative methods to exfoliation. Epitaxial growth of silicon on various substrates has been widely exploited in attempts to form 2D Si honeycomb structures. In this article, we provide a comprehensive state-of-the-art review focusing on the different epitaxial systems reported in the literature, some of which having generated controversy and long debates. In the search for the synthesis of 2D Si honeycomb structures, other 2D allotropes of Si have been discovered and will also be presented in this review. Finally, with a view to applications, we discuss the reactivity and air-stability of silicene as well as the strategy devised to decouple epitaxial silicene from the underlying surface and its transfer to a target substrate.

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam incidence angle α and low-energy electron diffraction (LEED), as well as ex situ by grazing incidence X-ray diffraction (GIXRD). Scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) were also reported. The REELS spectra, taken at the Si K absorption edge (~1.840 KeV), reveal the presence of two distinct loss structures attributed to transitions 1s→π* and 1s→σ* according to their intensity dependence on α, attesting to the sp²-like hybridization of the silicon valence orbitals in both thin and thick Si films. The synthesis of a silicon allotrope on the α-phase of Si(111)√3 × √3R30°-Bi substrate was demonstrated by LEED patterns and GIXRD that discloses the presence of a Si stack of 3.099 (3) Å and a √3 × √3 unit cell of 6.474 Å, typically seen for multilayer silicene. STM and STS measurements corroborated the findings. These measurements provided a platform for the new √3 × √3R30° Si allotrope on a Si(111)√3 × √3 R30°-Bi template, paving the way for realizing topological insulator heterostructures from different two-dimensional materials, Bi and Si.

Moiré-Potential-Induced Band Structure Engineering in Graphene and Silicene

A moiré pattern results from the projection of one periodic pattern to another with relative lattice constant or misalignment and provides great periodic potential to modify the electronic properties of pristine materials. In this Review, recent research on the effect of the moiré superlattice on the electronic structures of graphene and silicene, both of which possess a honeycomb lattice, is focused on. The moiré periodic potential is introduced by the interlayer interaction to realize abundant phenomena, including new generation of Dirac cones, emergence of Van Hove singularities (vHs) at the cross point of two sets of Dirac cones, Mott-like insulating behavior at half-filling state, unconventional superconductivity, and electronic Kagome lattice and flat band with nontrivial edge state. The role of interlayer coupling strength, which is determined by twist angle and buckling degree, in these exotic properties is discussed in terms of both the theoretical prediction and experimental measurement, and finally, the challenges and outlook for this field are discussed.

New Findings on Multilayer Silicene on Si(111)√3×√3R30°-Ag Template

We report new findings on multilayer silicene grown on Si(111)√3 × √3 R30°-Ag template, after the recent first compelling experimental evidence of its synthesis. Low-energy electron diffraction, reflection high-energy electron diffraction, and energy-dispersive grazing incidence X-ray diffraction measurements were performed to show up the fingerprints of √3 × √3 multilayer silicene. Angle-resolved photoemission spectroscopy displayed new features in the second surface Brillouin zone, attributed to the multilayer silicene on Si(111)√3 × √3 R30°-Ag. Band-structure dispersion theoretical calculations performed on a model of three honeycomb stacked layers, silicene grown on Si(111)√3 × √3 R30°-Ag surface confirm the experimental results.

Dirac Signature in Germanene on Semiconducting Substrate

2D Dirac materials supported by nonmetallic substrates are of particular interest due to their significance for the realization of the quantum spin Hall effect and their application in field-effect transistors. Here, monolayer germanene is successfully fabricated on semiconducting germanium film with the support of a Ag(111) substrate. Its linear-like energy-momentum dispersion and large Fermi velocity are derived from the pronounced quasiparticle interference patterns in a √3 × √3 superstructure. In addition to Dirac fermion characteristics, the theoretical simulations reveal that the energy gap opens at the Brillouin zone center of the √3 × √3 restructured germanene, which is evoked by the symmetry-breaking perturbation potential. These results demonstrate that the germanium nanosheets with √3 × √3 germanene can be an ideal platform for fundamental research and for the realization of high-speed and low-energy-consumption field-effect transistors.

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage during evaporation, for the different temperatures. In the temperature regime where multilayer silicene has been claimed to form (470-500 K), a good agreement is found with AES intensity variations and STM measurements within a Ag surfactant mediated growth, whereas a model with multilayer silicene growth fails to reproduce the AES measurements.

Silicene: A Promising Anode for Lithium-Ion Batteries

Silicene, a single-layer-thick silicon nanosheet with a honeycomb structure, is successfully fabricated by the molecular-beam-epitaxy (MBE) deposition method on metallic substrates and by the solid-state reaction method. Here, recent progress on the features of silicene that make it a prospective anode for lithium-ion batteries (LIBs) are discussed, including its charge-carrier mobility, chemical stability, and metal-silicene interactions. The electrochemical performance of silicene is reviewed in terms of both theoretical predictions and experimental measurements, and finally, its challenges and outlook are considered.

Angle-resolved photoemission spectroscopy for the study of two-dimensional materials

Quantum systems in confined geometries allow novel physical properties that cannot easily be attained in their bulk form. These properties are governed by the changes in the band structure and the lattice symmetry, and most pronounced in their single layer limit. Angle-resolved photoemission spectroscopy (ARPES) is a direct tool to investigate the underlying changes of band structure to provide essential information for understanding and controlling such properties. In this review, recent progresses in ARPES as a tool to study two-dimensional atomic crystals have been presented. ARPES results from few-layer and bulk crystals of material class often referred as “beyond graphene” are discussed along with the relevant developments in the instrumentation.

Direct evidence of interaction-induced Dirac cones in a monolayer silicene/Ag(111) system

Silicene, analogous to graphene, is a one-atom-thick 2D crystal of silicon, which is expected to share many of the remarkable properties of graphene. The buckled honeycomb structure of silicene, along with enhanced spin-orbit coupling, endows silicene with considerable advantages over graphene in that the spin-split states in silicene are tunable with external fields. Although the low-energy Dirac cone states lie at the heart of all novel quantum phenomena in a pristine sheet of silicene, a hotly debated question is whether these key states can survive when silicene is grown or supported on a substrate. Here we report our direct observation of Dirac cones in monolayer silicene grown on a Ag(111) substrate. By performing angle-resolved photoemission measurements on silicene(3 × 3)/Ag(111), we reveal the presence of six pairs of Dirac cones located on the edges of the first Brillouin zone of Ag(111), which is in sharp contrast to the expected six Dirac cones centered at the K points of the primary silicene(1 × 1) Brillouin zone. Our analysis shows clearly that the unusual Dirac cone structure we have observed is not tied to pristine silicene alone but originates from the combined effects of silicene(3 × 3) and the Ag(111) substrate. Our study thus identifies the case of a unique type of Dirac cone generated through the interaction of two different constituents. The observation of Dirac cones in silicene/Ag(111) opens a unique materials platform for investigating unusual quantum phenomena and for applications based on 2D silicon systems.

Ordered 2D Structure Formed upon the Molecular Beam Epitaxy Growth of Ge on the Silicene/Ag(111) Surface

Growth of Ge by molecular beam epitaxy (MBE) on top of the silicene monolayer on the Ag(111) surface results in either a dispersed adlayer or a two-dimensional (2D) ordered structure depending on the silicene phase. Scanning tunneling microscopy (STM) images show that the ordered adsorbed Ge atoms on (3 × 3)_Si domains occupy a position directly on top of down atoms in the buckled silicene layer, similar to the adatom positions on the Ge(111)-c(2 × 8) surface. By contrast, no long-range ordering of Ge adatoms is observed on the domain, possibly partly because of the interference effects of the Ag substrate. Results herein suggest that the deposited Ge atoms tend to build an additional three-dimensional bulk layer on the silicene monolayer and that the growth of the 2D germanene/silicene heterostructure may not be achieved in a straightforward manner.

Few layer epitaxial germanene: a novel two-dimensional Dirac material

Monolayer germanene, a novel graphene-like germanium allotrope akin to silicene has been recently grown on metallic substrates. Lying directly on the metal surfaces the reconstructed atom-thin sheets are prone to lose the massless Dirac fermion character and unique associated physical properties of free standing germanene. Here, we show that few layer germanene, which we create by dry epitaxy on a gold template, possesses Dirac cones thanks to a reduced interaction. This finding established on synchrotron-radiation-based photoemission, scanning tunneling microscopy imaging and surface electron diffraction places few layer germanene among the rare two-dimensional Dirac materials. Since germanium is currently used in the mainstream Si-based electronics, perspectives of using germanene for scaling down beyond the 5 nm node appear very promising. Other fascinating properties seem at hand, typically the robust quantum spin Hall effect for applications in spintronics and the engineering of Floquet Majorana fermions by light for quantum computing.

The Rise of Elemental Two-Dimensional Materials Beyond Graphene

Following the publication in 2012 of the first compelling evidence of the synthesis of silicene, the silicon based counterpart of graphene, the last two years have seen a surge of articles on elemental, novel two-dimensional materials beyond graphene. Here, research in this burgeoning field is highlighted.