Negative differential conductance in molecular junctions: an overview of experiment and theory

Determining Transmission Characteristics from Shot-Noise-Driven Electroluminescence in Single-Molecule Junctions

Biased metal-molecule-metal junctions emit light through electroluminescence, a phenomenon at the intersection of molecular electronics and nanoplasmonics. This can occur when the junction plasmon mode is excited by inelastic electron current fluctuations. Here, we simultaneously measure the conductance and electroluminescence intensity from single-molecule junctions with time resolution in a solution environment at room temperature. We use current versus bias data to determine the molecular junction transport parameters and then relate these to the expected current shot noise. We find that the electroluminescence signal accurately matches the theoretical prediction of shot-noise-driven emission in a large fraction of the molecular junctions studied. This introduces a novel experimental method for qualitatively estimating finite-frequency shot noise in single-molecule junctions under ambient conditions. We further demonstrate that electroluminescence can be used to obtain the level alignment of the frontier orbital dominating transport in the molecular junction.

Charge Transport in Conjugated and Saturated Hydrocarbons: Comparing Ballistic and Cotunneling Contributions

The comparison between electrical transport in CnH2n+2S2 alkane and CnHn+2S2 alkene (n = 4, 6, 8, 10) is studied by using a generalized Breit-Wigner approach and considering coherent transport mechanisms and eventual changes in the state of charge (i.e., cotunneling processes) for both molecules. In general, the conductance of alkanes tends to be smaller than that of similar-sized alkenes. However, cotunneling processes have an important participation in the overall transport in the case of alkanes but not for the alkene family. The progressive changes in both the eigenenergies of the relevant frontier molecular orbitals of the charged species and their spatial localization play decisive roles in the observed differences. While the molecular orbitals of the charged species of the conjugated molecules are hardly affected by the applied voltage, their saturated counterparts are quite sensitive to the external field. With this, successive avoided-crossing events between the molecular orbitals of the single-charged alkane molecules can lead to the appearance of nonballistic conduction channels that make no negligible contributions to the molecular transport.

Stereoelectronic Switches of Single-Molecule Junctions through Conformation-Modulated Intramolecular Coupling Approaches

Stereoelectronic effects in single-molecule junctions have been widely utilized to achieve a molecular switch, but high-efficiency and reproducible switching remain challenging. Here, we demonstrate that there are three stable intramolecular conformations in the 9,10-diphenyl-9,10-methanoanthracen-11-one (DPMAO) systems due to steric effect. Interestingly, different electronic coupling approaches including weak coupling (through-space), decoupling, and strong coupling (through-bond) between two terminal benzene rings are accomplished in the three stable conformations, respectively. Theoretical calculations show that the molecular conductance of three stable conformations differs by more than 1 order of magnitude. Furthermore, the populations of the three stable conformations are highly dependent on the solvent effect and the external electric field. Therefore, an excellent molecular switch can be achieved using the DPMAO molecule junctions and external stimuli. Our findings reveal that modulating intramolecular electronic coupling approaches may be a useful manner to enable molecular switches with high switching ratios. This opens up a new route for building high-efficiency molecular switches in single-molecular junctions.

Quantum Chemical Studies on Possible Molecular Devices Based on Electric Field-Induced Intramolecular Charge Transfer

We report quantum chemical studies on possible molecular devices working based on electric field-induced intramolecular charge transfer (EFIMCT). In the case of donor-acceptor (DA)-type molecular systems, intramolecular charge transfer (IMCT) can be induced by applying the external electric field to molecular systems along the charge transport direction, providing a possible switching mechanism which does not depend upon the electron-phonon coupling effect and is different from the negative differential resistance mechanism observed in the well-known NO2-substituted phenylene ethynylene oligomers. When the EFIMCT proceeds, the molecular systems have strong static electron correlation effects, where the standard nonequilibrium Green's function-density functional theory (DFT) approach cannot be applied to the molecular junction. As a first step toward practical switching devices, we do quantum chemical studies on the EFIMCT in such molecular systems as an isolated molecule, instead of using the electrode-junction-electrode open quantum system model. A prototype molecule P1 is designed as a tentative candidate molecule where the EFIMCT can proceed. The complete active space self-consistent field (CASSCF) molecular orbital calculations on P1 indicate that the EFIMCT can proceed at the external electric field intensity of 0.003 au, corresponding to about 2.25 V bias voltage. This calculated result strongly suggests that the development of this type of switching devices working at practically low bias voltage is feasible if the molecular system is properly designed. Broken symmetry unrestricted Hartree-Fock and spin-polarized Kohn-Sham DFT calculations also qualitatively reproduce the CASSCF results on P1, to some extent, indicating that these approaches can be employed for rough estimations on the EFIMCT such as the first screening of a large quantity of candidate molecules for this type of molecular devices. The possibility of molecular memory devices based on the EFIMCT is also discussed by analyzing the ground and excited potential energy surface model. Remaining challenges to develop practical molecular devices are discussed.

Influences of point defects on electron transport of two-dimensional gep semiconductor device

The quantum transport properties of defective two-dimensional (2D) GeP semiconductor nanodevice consisting of typical point defects, such as antisite defect, substitutional defect, and Schottky defect, have been studied by using density functional theory combined with non-equilibrium Green's function calculation. The antisite defect has indistinctive influences on electron transport. However, both substitutional and Schottky defect have introduced promising defect state at the Fermi level, indicating the possibility of improvement on the carrier transport. Our quantitative quantum transport calculations ofI-V_bbehavior have revealed that the electrical characters are enhanced. Moreover, the P atom vacancy could induce significant negative differential resistance phenomenon, and the physical mechanism is unveiled by detailed analysis. The transfer characteristic properties could be prominently improved by substitutional defect and vacancy defect. Most importantly, we have proposed a computational design of GeP-based electronic device with improved electrical performance by introducing vacancy defect. Our findings could be helpful to the practical application of novel 2D GeP semiconductor nanodevice in future.

Nucleobase-Bonded Graphene Nanoribbon Junctions: Electron Transport from First Principles

Carbon and hydrogen bonding constitute the backbone of life; in the form of graphene, possibly functionalized by DNA nucleobases, these hold promise for the programmable assembly of graphene-based nanoelectronic devices. It is still unknown how hydrogen-bonded junctions inherent in such devices will perform as electron transport media. Here, we design nucleobase-bonded graphene nanoribbons and quantify their quantum transport characteristics using first-principles calculations. Pronounced rectifying behavior and negative differential resistance are found, as well as high conductance of certain structures, with the guanine-cytosine junction in general being superior to the adenine-thymine junction. The identified sensitivity of the conductance to atomic details of the interfaces offers initial hints and guidance for experimental realization. The dependence of current on electrostatic gate doping, with an on/off ratio of ∼10², shows the potential of the junction as a field effect transistor.

Negative Differential Resistance in Spin-Crossover Molecular Devices

We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe^II SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule. Experimental results are supported by density functional theory (DFT) with nonequilibrium Green's function (NEGF) calculations and a generic theoretical model. While the DFT+NEGF calculations reproduce NDR for a special atomically sharp STM tip, the effect is attributed to the energy-dependent tip density of states rather than the molecule itself. We, therefore, propose a Coulomb blockade model involving three molecular orbitals with very different spatial localization as suggested by the molecular electronic structure.

2,7- and 4,9-Dialkynyldihydropyrene Molecular Switches: Syntheses, Properties, and Charge Transport in Single-Molecule Junctions

This paper describes the syntheses of several functionalized dihydropyrene (DHP) molecular switches with different substitution patterns. Regioselective nucleophilic alkylation of a 5-substituted dimethyl isophthalate allowed the development of a workable synthetic protocol for the preparation of 2,7-alkyne-functionalized DHPs. Synthesis of DHPs with surface-anchoring groups in the 2,7- and 4,9-positions is described. The molecular structures of several intermediates and DHPs were elucidated by X-ray single-crystal diffraction. Molecular properties and switching capabilities of both types of DHPs were assessed by light irradiation experiments, spectroelectrochemistry, and cyclic voltammetry. Spectroelectrochemistry, in combination with density functional theory (DFT) calculations, shows reversible electrochemical switching from the DHP forms to the cyclophanediene (CPD) forms. Charge-transport behavior was assessed in single-molecule scanning tunneling microscope (STM) break junctions, combined with density functional theory-based quantum transport calculations. All DHPs with surface-contacting groups form stable molecular junctions. Experiments show that the molecular conductance depends on the substitution pattern of the DHP motif. The conductance was found to decrease with increasing applied bias.

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current–voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.

Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ2 (Q = S, Se) monolayer

We studied the physical, electronic transport and optical properties of a unique pentagonal PdQ₂ (Q = S, Se) monolayers. The dynamic stability of 2Dwrinkle like-PdQ₂ is proven by positive phonon frequencies in the phonon dispersion curve. The optimized structural parameters of wrinkled pentagonal PdQ₂ are in good agreement with the available experimental results. The ultimate tensile strength (UTHS) was calculated and found that, penta-PdS₂ monolayer can withstand up to 16% (18%) strain along x (y) direction with 3.44 GPa (3.43 GPa). While, penta-PdSe₂ monolayer can withstand up to 17% (19%) strain along x (y) dirrection with 3.46 GPa (3.40 GPa). It is found that, the penta-PdQ₂ monolayers has the semiconducting behavior with indirect band gap of 0.94 and 1.26 eV for 2D-PdS₂ and 2D-PdSe₂, respectively. More interestingly, at room temperacture, the hole mobilty (electron mobility) obtained for 2D-PdS₂ and PdSe₂ are 67.43 (258.06) cm² V⁻¹ s⁻¹ and 1518.81 (442.49) cm² V⁻¹ s⁻¹, respectively. In addition, I-V characteristics of PdSe₂ monolayer show strong negative differential conductance (NDC) region near the 3.57 V. The Shockly-Queisser (SQ) effeciency prameters of PdQ₂ monolayers are also explored and the highest SQ efficeinciy obtained for PdS₂ is 33.93% at −5% strain and for PdSe₂ is 33.94% at −2% strain. The penta-PdQ₂ exhibits high optical absorption intensity in the UV region, up to 4.04 × 10⁵ (for PdS₂) and 5.28 × 10⁵ (for PdSe₂), which is suitable for applications in optoelectronic devices. Thus, the ultrathin PdQ₂ monolayers could be potential material for next-generation solar-cell applications and high performance nanodevices.

Electric-Field-Driven Negative Differential Conductance in 2D van der Waals Ferromagnet Fe3GeTe2

Understanding quantum tunneling principles over two-dimensional (2D) van der Waals (vdW) ferromagnets at the atomic level is essential and complementary to the fundamental study of low-dimensional strong correlated systems and is critical for the development of magnetic tunneling devices. Here, we demonstrate a local electric-field controlled negative differential conductance (NDC) in 2D vdW ferromagnet Fe₃GeTe₂ (FGT) by using scanning tunneling microscopy (STM). The STM reveals that NDC shows an atomic position dependence and can be precisely modulated by altering the tunneling junction. The band shift together with electric-field-driven 3d-orbital occupancy modulates the sensitive magnetic anisotropic energy (MAE) in 2D FGT and consequently leads to electric-field-tunable NDC, which is also verified by theoretical simulation. This work realizes the electric-field-driven NDC in 2D ferromagnet FGT, which paves a way to design and develop applications based on 2D vdW magnets.

Spinterface Origin for the Chirality-Induced Spin-Selectivity Effect

When electrons are injected through a chiral molecule, the resulting current may become spin polarized. This effect, known as the chirality-induced spin-selectivity (CISS) effect, has been suggested to emerge due to the interplay between spin-orbit interactions and the chirality within the molecule. However, such explanations require unrealistically large values for the molecular spin-orbit interaction. Here, we present a theory for the CISS effect based on the interplay between spin-orbit interactions in the electrode, the chirality of the molecule (which induces a solenoid field), and spin-transfer torque at the molecule-electrode interface. Using a mean-field calculation with simple models for the molecular junction, we show that our phenomenological theory can qualitatively account for all key experimental observations, most importantly the magnitude of the CISS with realistic parameters. We also provide a set of predictions which can be readily tested experimentally.

Functional Redox-Active Molecular Tunnel Junctions

Redox-active molecular junctions have attracted considerable attention because redox-active molecules provide accessible energy levels enabling electronic function at the molecular length scales, such as, rectification, conductance switching, or molecular transistors. Unlike charge transfer in wet electrochemical environments, it is still challenging to understand how redox-processes proceed in solid-state molecular junctions which lack counterions and solvent molecules to stabilize the charge on the molecules. In this minireview, we first introduce molecular junctions based on redox-active molecules and discuss their properties from both a chemistry and nanoelectronics point of view, and then discuss briefly the mechanisms of charge transport in solid-state redox-junctions followed by examples where redox-molecules generate new electronic function. We conclude with challenges that need to be addressed and interesting future directions from a chemical engineering and molecular design perspectives.

Sharp Negative Differential Resistance from Vibrational Mode Softening in Molecular Junctions

We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to quadratic electron-vibration couplings, and by developing a mean-field approach. We discover that the negative sign of the quadratic electron-vibration coupling coefficient can realize, at high voltage, a sharp negative differential resistance (NDR) effect with a large peak-to-valley ratio. Calculated current-voltage characteristics, obtained based on physical parameters for a nitro-substituted oligo(phenylene ethynylene) junction, agree very well with the measurements. Our results establish that vibrational mode softening is a crucial effect at high voltage, underlying NDR, a substantial diode effect, and the breakdown of current-carrying molecular junctions.

Origins of Negative Differential Resistance in N-doped ZnO Nano-ribbons: Ab-initio Investigation

The electronic transport in low-dimensional materials is controlled by quantum coherence and non-equilibrium statistics. The scope of the present investigation is to search for the origins of negative-differential resistance (NDR) behavior in N-doped ultra-narrow zigzag-edge ZnO nano-ribbons (ZnO-NRs). A state-of-the-art technique, based on a combination of density-functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism, is employed to probe the electronic and transport properties. The effect of location of N dopant, with respect to the NR edges, on IV-curve and NDR is tested and three different positions for N-atom are considered: (i) at the oxygen-rich edge; (ii) at the center; and (iii) at the Zn-rich edge. The results show that both resistance and top-to-valley current ratio (TVCR) reduce when N-atom is displaced from O-rich edge to center to Zn-rich edge, respectively. After an analysis based on the calculations of transmission coefficient versus bias, band structures, and charge-density plots of HOMO/LUMO states, one is able to draw a conclusion about the origins of NDR. The unpaired electron of N dopant is causing the curdling/localization of wave-function, which in turn causes strong back-scattering and suppression of conductive channels. These effects manifest themselves in the drawback of electric current (or so called NDR). The relevance of NDR for applications in nano-electronic devices (e.g., switches, rectifiers, amplifiers, gas sensing) is further discussed.

Negative Differential Conductance Assisted by Optical Fields in a Single Quantum Dot with Ferromagnetic Electrodes

In a single quantum dot (QD) system connected with ferromagnetic electrodes, the electron transport properties, assisted by the thermal and Fock state optical fields, are theoretically studied by the Keldysh nonequilibrium Green’s function approach. The results show that the evolution properties of the density of state and tunneling current assisted by the Fock state optical field, are quite different from those of the thermal state. The photon sideband shift decreases monotonously with the increase in the electron–photon coupling strength for the case of the thermal state, while the shift is oscillatory for the case of the Fock state. Negative differential conductance (NDC) appears obviously in a QD system contacted with parallel (P) and antiparallel (AP) magnetization alignment of the ferromagnetic electrode leads, assisted by the Fock state optical field in a wide range of electron–photon interaction parameters. Evident NDC usually only arises in an AP configuration QD system assisted by the thermal state optical field. The results have the potential to introduce a new way to actively manipulate and control the single-electron tunneling transport on a QD system by the quantum states of the optical field.

Breaking Down Resonance: Nonlinear Transport and the Breakdown of Coherent Tunneling Models in Single Molecule Junctions

The promise of the field of single-molecule electronics is to reveal a new class of quantum devices that leverages the strong electronic interactions inherent to subnanometer scale systems. Here, we form Au-molecule-Au junctions using a custom scanning tunneling microscope and explore charge transport through current-voltage measurements. We focus on the resonant tunneling regime of two molecules, one that is primarily an electron conductor and one that conducts primarily holes. We find that in the high bias regime, junctions that do not rupture demonstrate reproducible and pronounced negative differential resistance (NDR)-like features followed by hysteresis with peak-to-valley ratios exceeding 100 in some cases. Furthermore, we show that both junction rupture and NDR are induced by charging of the molecular orbital dominating transport and find that the charging is reversible at lower bias and with time with kinetic time scales on the order of hundreds of milliseconds. We argue that these results cannot be explained by existing models of charge transport and likely require theoretical advances describing the transition from coherent to sequential tunneling. Our work also suggests new rules for operating single-molecule devices at high bias to obtain highly nonlinear behavior.

Rectification and negative differential resistance via orbital level pinning

A donor-acceptor system, 4-thiophenyl-azafulleroid (4TPA-C60), is investigated at the point of HOMO/LUMO resonance and beyond to understand how negative differential resistance (NDR) features may be observed in such systems. Our previous investigation showed that charge transfer between the occupied and unoccupied states at resonance hindered crossing of the HOMO and LUMO levels, thus preventing the formation of an NDR feature. In this work, it is shown that the negative differential resistance feature of 4TPA-C60 can be tailored based on the couplings at the metal/molecule interface. Ab initio calculations show that limited charge extraction from atomically sharp contacts results in a HOMO-LUMO pinning effect which delays the onset of the NDR feature. Subsequent unpinning of the states can only occur when additional charge extraction channels enter the bias window, highlighting an important role which non-frontier states play in charge transport. The proposed charge transfer mechanism is then exploited by introducing a fluorine atom into the C60 cage to tune the energies of the acceptor, and narrow the width of the current peak. These findings not only demonstrate the importance of the metal/molecule interface in the design of molecular electronic architectures but also serve to inform future design of molecular diodes and RTDs.

Side-Group Effect on Electron Transport of Single Molecular Junctions

In this article, we have investigated the influence of the nitro side-group on the single molecular conductance of pyridine-based molecules by scanning tunneling microscopy break junction. Single molecular conductance of 4,4'-bipyridine (BPY), 3-nitro-4-(pyridin-4-yl)pyridine (BPY-N), and 3-nitro-4-(3-nitropyridin-4-yl)pyridine (BPY-2N) were measured by contact with Au electrodes. For the BPY molecular junction, two sets of conductance were found with values around 10-3.1 G₀ (high G) and 10-3.7 G₀ (low G). The addition of nitro side-group(s) onto the pyridine ring resulted in lower conductance of 10-3.8 G₀ for BPY-N and 10-3.9 G₀ for BPY-2N, respectively, which can be attributed to the twist angle of two pyridine rings. Moreover, the steric hindrance of nitro group(s) also affects the contacting configuration of electrode-molecule-electrode. As a consequence, only one set of conductance value was observed for BPY-N and BPY-2N. Our work clearly shows the important role of side-groups on the electron transport of single-molecule junctions.

Spiro-Conjugated Molecular Junctions: Between Jahn-Teller Distortion and Destructive Quantum Interference

The quest for molecular structures exhibiting strong quantum interference effects in the transport setting has long been on the forefront of chemical research. We establish theoretically that the unusual geometry of spiro-conjugated systems gives rise to complete destructive interference in the resonant-transport regime. This results in a current blockade of the type not present in meta-connected benzene or similar molecular structures. We further show that these systems can undergo a transport-driven Jahn-Teller distortion, which can lift the aforementioned destructive-interference effects. The overall transport characteristics are determined by the interplay between the two phenomena. Spiro-conjugated systems may therefore serve as a novel platform for investigations of quantum interference and vibronic effects in the charge-transport setting. The potential to control quantum interference in these systems can also turn them into attractive components in designing functional molecular circuits.

Photoconductance from Exciton Binding in Molecular Junctions

We report on a theoretical analysis and experimental verification of a mechanism for photoconductance, the change in conductance upon illumination, in symmetric single-molecule junctions. We demonstrate that photoconductance at resonant illumination arises due to the Coulomb interaction between the electrons and holes in the molecular bridge, so-called exciton-binding. Using a scanning tunneling microscopy break junction technique, we measure the conductance histograms of perylene tetracarboxylic diimide (PTCDI) molecules attached to Au-electrodes, in the dark and under illumination, and show a significant and reversible change in conductance, as expected from the theory. Finally, we show how our description of the photoconductance leads to a simple design principle for enhancing the performance of molecular switches.

Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin Chains

We present the appearance of negative differential resistance (NDR) in spin-dependent electron transport through a few-atom spin chain. A chain of three antiferromagnetically coupled Fe atoms (Fe trimer) was positioned on a Cu_{2}N/Cu(100) surface and contacted with the spin-polarized tip of a scanning tunneling microscope, thus coupling the Fe trimer to one nonmagnetic and one magnetic lead. Pronounced NDR appears at the low bias of 7 mV, where inelastic electron tunneling dynamically locks the atomic spin in a long-lived excited state. This causes a rapid increase of the magnetoresistance between the spin-polarized tip and Fe trimer and quenches elastic tunneling. By varying the coupling strength between the tip and Fe trimer, we find that in this transport regime the dynamic locking of the Fe trimer competes with magnetic exchange interaction, which statically forces the Fe trimer into its high-magnetoresistance state and removes the NDR.

Modulation and Control of Charge Transport Through Single-Molecule Junctions

The ability to modulate and control charge transport though single-molecule junction devices is crucial to achieving the ultimate goal of molecular electronics: constructing real-world-applicable electronic components from single molecules. This review aims to highlight the progress made in single-molecule electronics, emphasizing the development of molecular junction electronics in recent years. Among many techniques that attempt to wire a molecule to metallic electrodes, the single-molecule break junction (SMBJ) technique is one of the most reliable and tunable experimental platforms for achieving metal-molecule-metal configurations. It also provides great freedom to tune charge transport through the junction. Soon after the SMBJ technique was introduced, it was extensively used to measure the conductances of individual molecules; however, different conductances were obtained for the same molecule, and it proved difficult to interpret this wide distribution of experimental data. This phenomenon was later found to be mainly due to a lack of precise experimental control and advanced data analysis methods. In recent years, researchers have directed considerable effort into advancing the SMBJ technique by gaining a deeper physical understanding of charge transport through single molecules and thus enhancing its potential applicability in functional molecular-scale electronic devices, such as molecular diodes and molecular transistors. In parallel with that research, novel data analysis methods and approaches that enable the discovery of hidden yet important features in the data are being developed. This review discusses various aspects of molecular junction electronics, from the initial goal of molecular electronics, the development of experimental techniques for creating single-molecule junctions and determining single-molecule conductance, to the characterization of functional current-voltage features and the investigation of physical properties other than charge transport. In addition, the development of advanced data analysis methods is considered, as they are critical to gaining detailed physical insight into the underlying transport mechanisms.

Coherent quantum transport features in carbon superlattice structures

Whilst resonant transmission is well understood and can be fully harnessed for crystalline superlattices, a complete picture has not yet emerged for disordered superlattices. It has proven difficult to tune resonant transmission in disordered diamond-like carbon (DLC) superlattices as conventional models are not equipped to incorporate significant structural disorder. In this work, we present concurrent experimental and theoretical analysis which addresses resonant transmission in DLC superlattices. Devices were fabricated by growing alternate layers of DLC with different percentages of sp³ hybridized carbon.Coherent quantum transport effects were demonstrated in these structurally disordered DLC superlattices through distinct current modulation with negative differential resistance (NDR) in the current-voltage (I-V) measurements. A model was developed using tight-binding calculations assuming a random variation of the hopping integral to simulate structural (bond-length) disorder. Calculations of the I-V characteristics compliment the interpretation of the measurements and illustrate that while DLC superlattice structures are unlike their classical counterparts, the near-field structural order will help with the confinement of quantised states. The present model provides an empirical guide for tailoring the properties of future devices, giving rise to much hope that carbon electronics operating at high frequencies over large areas can now be developed.

Invariance of molecular charge transport upon changes of extended molecule size and several related issues

As a sanity test for the theoretical method employed, studies on (steady-state) charge transport through molecular devices usually confine themselves to check whether the method in question satisfies the charge conservation. Another important test of the theory's correctness is to check that the computed current does not depend on the choice of the central region (also referred to as the "extended molecule"). This work addresses this issue and demonstrates that the relevant transport and transport-related properties are indeed invariant upon changing the size of the extended molecule, when the embedded molecule can be described within a general single-particle picture (namely, a second-quantized Hamiltonian bilinear in the creation and annihilation operators). It is also demonstrates that the invariance of nonequilibrium properties is exhibited by the exact results but not by those computed approximately within ubiquitous wide- and flat-band limits (WBL and FBL, respectively). To exemplify the limitations of the latter, the phenomenon of negative differential resistance (NDR) is considered. It is shown that the exactly computed current may exhibit a substantial NDR, while the NDR effect is absent or drastically suppressed within the WBL and FBL approximations. The analysis done in conjunction with the WBLs and FBLs reveals why general studies on nonequilibrium properties require a more elaborate theoretical than studies on linear response properties (e.g., ohmic conductance and thermopower) at zero temperature. Furthermore, examples are presented that demonstrate that treating parts of electrodes adjacent to the embedded molecule and the remaining semi-infinite electrodes at different levels of theory (which is exactly what most NEGF-DFT approaches do) is a procedure that yields spurious structures in nonlinear ranges of current-voltage curves.

U-shaped relationship between current and pitch in helicene molecules

The helicene is constructed by twisted benzene or other aromatic rings, exhibiting a helical structure. Using first-principles calculations, we investigate the electronic transport of helicenes under stretching or compressing. Interestingly, a U-shaped curve of the current against d (the pitch of a helicene) is observed. Further analysis shows that, it is the result of the nonmonotonic change of HOMO-LUMO gap with d. The change of overlap between orbitals induced by conformational deformation is found to be the underlying mechanism. Moreover, the U-curve phenomenon is an intrinsic feature of the helicene molecules, being robust to the electrode materials or doping. This U-curve behavior is expected to be extended to helical graphene or other related structures, showing great application potential.