Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics.
Nat Commun 2017;
8:13828. [PMID:
28051063 PMCID:
PMC5216132 DOI:
10.1038/ncomms13828]
[Citation(s) in RCA: 117] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2016] [Accepted: 11/03/2016] [Indexed: 11/21/2022] Open
Abstract
To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb1−xSb2x/3Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4 Wm−1 K−1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.
In thermoelectric materials, dislocations at grain boundaries can be used to scatter midfrequency phonons. Here, Chen et al. use vacancy engineering and thermal annealing to generate dislocations homogeneously within the crystalline grains and obtain good figures of merit for PbSe-based thermoelectrics.
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